JP6053179B2 - 光学素子、光学薄膜形成装置、及び光学薄膜形成方法 - Google Patents
光学素子、光学薄膜形成装置、及び光学薄膜形成方法 Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims description 246
- 239000010409 thin film Substances 0.000 title claims description 81
- 238000000034 method Methods 0.000 title claims description 57
- 239000010408 film Substances 0.000 claims description 317
- 239000002245 particle Substances 0.000 claims description 58
- 238000012545 processing Methods 0.000 claims description 53
- 239000007789 gas Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 36
- 239000011261 inert gas Substances 0.000 claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005259 measurement Methods 0.000 description 120
- 230000003595 spectral effect Effects 0.000 description 83
- 239000012788 optical film Substances 0.000 description 81
- 230000000052 comparative effect Effects 0.000 description 37
- 230000015572 biosynthetic process Effects 0.000 description 36
- 239000010410 layer Substances 0.000 description 33
- 238000005546 reactive sputtering Methods 0.000 description 32
- 230000003667 anti-reflective effect Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 17
- 238000002834 transmittance Methods 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 11
- 238000009434 installation Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 238000003491 array Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000005499 meniscus Effects 0.000 description 2
- 230000036470 plasma concentration Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 241000511976 Hoya Species 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/02—Simple or compound lenses with non-spherical faces
- G02B3/04—Simple or compound lenses with non-spherical faces with continuous faces that are rotationally symmetrical but deviate from a true sphere, e.g. so called "aspheric" lenses
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Physical Vapour Deposition (AREA)
Description
屈折率表記(λ=550nm)
M=1.55〜1.80
H=1.80〜2.60
L=1.30〜1.55
<<実施例一覧>>
(実施例1)凹半球レンズ、B270、7層
(実施例2)凹半球レンズ、B270、7層
(実施例3)凹非球面レンズ、M−TAF101、7層
(実施例4)凹非球面レンズ、M−TAFD305、7層
(実施例5)凹非球面レンズ、M−TAFD305、7層
(実施例6)凹非球面レンズ、M−TAFD305、1層(SiO2)
<<比較例一覧>>
(比較例1)凹非球面レンズ、M−TAFD305、1層(SiO2)
(比較例2)凹非球面レンズ、M−TAFD305、1層(SiO2)
屈折率はλ=550nmにおける屈折率である。
なお、「分光反射率」とは、反射率を波長の関数として表したものをいう(非特許文献:「光用語辞典P237、発行者:オーム社)。本明細書においては、「分光反射率」を同じ意味として「分光反射特性」や「特性曲線」とも表記する。
x1=0.01〜0.50
x2=0.01〜0.60
x3=0.01〜0.50
x4=0.70〜1.30
y1=0.30〜1.00
y2=0.80〜1.50
y3=0.40〜1.00
x1=0.70〜1.30
x1=0.70〜1.30
x1=0.70〜1.30
2 処理室
3 光学レンズ
3a レンズ面
3b 外周縁
3c ランド面
4 ワークホルダー
4a ワーク設置面
5 ターゲット
5a ターゲット表面
6 スパッタ電極
7 電源
8 空間
9 遮蔽部
11 排気機構
12 不活性ガス供給機構
13 活性ガス供給機構
14 反射防止膜
L ターゲット表面とレンズ面の間の最大距離
Claims (6)
- 処理室を有し、曲面状表面を有する被成膜材に光学薄膜を前記処理室において形成する光学薄膜形成装置において、
前記処理室内の空気を排気する排気部と、
真空状態に保持された前記処理室内に活性ガスおよび不活性ガスを供給するガス供給部と、
前記処理室内に設けられ、前記被成膜材が配置される配置部と、
前記処理室内において前記配置部に対向配置されたターゲットと、
前記ターゲットの粒子であるターゲット粒子が出るよう前記ターゲットに電圧を印加する電源と、
前記処理室内に、前記処理室内の空間の一部分であって前記ターゲットと前記配置部との間の空間である特定空間を取り囲むことで、ガス粒子を跳ね返し、前記ターゲット粒子、または、前記活性ガスと反応した前記ターゲット粒子である化合物粒子を、前記被成膜材の前記曲面状表面に堆積させることが可能に設けられている遮蔽部と、
を備える、光学薄膜形成装置。 - 前記遮蔽部の最下部の位置は、前記配置部に配置された前記被成膜材の最も高い位置と同じかそれよりも低い、
請求項1記載の光学薄膜形成装置。 - 前記被成膜材は、光学素子であり、
前記曲面状表面は、凹面形状を有し、
前記光学素子を前記配置部上に配置した状態において、前記曲面状表面の面径を前記凹面形状における球欠長さで除した値を、前記ターゲット表面から前記凹面形状の最も遠い位置までの距離でさらに除したときの値が0.010〜10の範囲となるように前記配置部及び前記ターゲットが配置されている、
請求項1または2記載の光学薄膜形成装置。 - 第1の変更と第2の変更のうちの少なくとも一方を行う位置変更部を更に備え、
前記第1の変更は、前記遮蔽部の前記配置部に対する相対的な位置を、前記特定空間を取り囲む第1の位置から、前記第1の位置よりも前記配置部と前記遮蔽部とが離れた第2の位置へと変更することであり、
前記第2の変更は、前記相対的な位置を、前記第2の位置から前記第1の位置へと変更することである、
請求項1〜3のいずれか1項に記載の光学薄膜形成装置。 - 曲面状表面を有する被成膜材に光学薄膜を形成する光学薄膜形成方法において、
処理室内の配置部上に前記被成膜材を配置する配置工程と、
前記被成膜材が前記処理室内に配置された状態で、前記処理室内を真空排気する排気工程と、
真空排気した後に前記処理室内に活性ガスおよび不活性ガスを供給するガス供給工程と、
前記配置部に対向配置されたターゲットに電圧を印加することにより、前記不活性ガスが前記ターゲットに衝突して前記ターゲットから前記ターゲットの粒子であるターゲット粒子を出すスパッタ工程と、
前記処理室内の空間の一部分であって前記ターゲットと前記配置部との間の空間である特定空間を取り囲み前記処理室内に設けられた遮蔽部によって、ガス粒子が跳ね返り、前記スパッタ工程により得られる前記ターゲット粒子、または、前記活性ガスと反応した前記ターゲット粒子である化合物粒子が、前記被成膜材の前記曲面状表面に堆積する光学薄膜形成工程と
を有する光学薄膜形成方法。 - 前記光学薄膜形成工程において、前記被成膜材は、前記特定空間の中の前記ターゲットの粒子の平均自由行程と、前記遮蔽部の内側面の距離との比で求められるクヌーセン数が0.3より小さい領域に配置されている、
請求項5記載の光学薄膜形成方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2011290468 | 2011-12-30 | ||
JP2011290468 | 2011-12-30 | ||
PCT/JP2012/084172 WO2013100145A1 (ja) | 2011-12-30 | 2012-12-28 | 光学素子、光学薄膜形成装置、及び光学薄膜形成方法 |
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JPWO2013100145A1 JPWO2013100145A1 (ja) | 2015-05-11 |
JP6053179B2 true JP6053179B2 (ja) | 2016-12-27 |
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Country Status (5)
Country | Link |
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US (1) | US20150009556A1 (ja) |
JP (1) | JP6053179B2 (ja) |
CN (1) | CN104066867B (ja) |
TW (1) | TWI558832B (ja) |
WO (1) | WO2013100145A1 (ja) |
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EP3274485B1 (en) | 2015-03-25 | 2023-08-16 | Essilor International | Anti-reflective sputtering stack with low rv and low ruv |
JP2021056108A (ja) * | 2019-09-30 | 2021-04-08 | 日本電産株式会社 | レンズ測定装置、レンズ支持治具、反射防止レンズの製造方法およびレンズユニットの製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05117858A (ja) * | 1991-10-23 | 1993-05-14 | New Japan Radio Co Ltd | プラズマ気相成長法による曲面板製造装置 |
JPH0758026A (ja) * | 1993-08-13 | 1995-03-03 | Toyobo Co Ltd | 結晶性薄膜製造装置 |
JP3410574B2 (ja) * | 1994-03-31 | 2003-05-26 | 株式会社メガチップス | 単結晶炭素薄膜、軸配向多結晶炭素薄膜、高音用スピーカの振動板、半導体レーザ装置のヒートシンク、及び工具形成方法 |
JPH08157295A (ja) * | 1994-12-01 | 1996-06-18 | Crystal Device:Kk | 薄膜形成方法 |
JPH1025569A (ja) * | 1996-07-11 | 1998-01-27 | Shin Etsu Chem Co Ltd | スパッタ装置 |
JP3753525B2 (ja) * | 1997-11-28 | 2006-03-08 | 宮城沖電気株式会社 | スパッタリング方法 |
JP2000156486A (ja) * | 1998-11-20 | 2000-06-06 | Matsushita Electric Ind Co Ltd | 固体撮像装置の製造方法 |
JP2001214262A (ja) * | 2000-01-28 | 2001-08-07 | Toshiba Corp | スパッタ装置および半導体装置の製造方法 |
US6423565B1 (en) * | 2000-05-30 | 2002-07-23 | Kurt L. Barth | Apparatus and processes for the massproduction of photovotaic modules |
JP2001355068A (ja) * | 2000-06-09 | 2001-12-25 | Canon Inc | スパッタリング装置および堆積膜形成方法 |
JP2002249872A (ja) * | 2001-02-22 | 2002-09-06 | Murata Mfg Co Ltd | スパッタ装置およびスパッタ方法 |
US6783638B2 (en) * | 2001-09-07 | 2004-08-31 | Sputtered Films, Inc. | Flat magnetron |
KR101005989B1 (ko) * | 2002-06-11 | 2011-01-05 | 코니카 미놀타 홀딩스 가부시키가이샤 | 표면 처리 방법 및 광학 부품 |
JP2004035941A (ja) * | 2002-07-03 | 2004-02-05 | Konica Minolta Holdings Inc | 表面処理方法及び光学部品 |
JP4197149B2 (ja) * | 2003-11-18 | 2008-12-17 | パナソニック株式会社 | スパッタリング装置 |
JP2006169610A (ja) * | 2004-12-20 | 2006-06-29 | Matsushita Electric Ind Co Ltd | スパッタリング装置 |
US7244344B2 (en) * | 2005-02-03 | 2007-07-17 | Applied Materials, Inc. | Physical vapor deposition plasma reactor with VHF source power applied through the workpiece |
US8398775B2 (en) * | 2007-11-08 | 2013-03-19 | Applied Materials, Inc. | Electrode and arrangement with movable shield |
JP5369494B2 (ja) * | 2008-05-21 | 2013-12-18 | 凸版印刷株式会社 | 反射防止フィルム及び反射防止フィルムを有する偏光板 |
US20100055298A1 (en) * | 2008-08-28 | 2010-03-04 | Applied Materials, Inc. | Process kit shields and methods of use thereof |
JP4537479B2 (ja) * | 2008-11-28 | 2010-09-01 | キヤノンアネルバ株式会社 | スパッタリング装置 |
WO2010116560A1 (ja) * | 2009-03-30 | 2010-10-14 | キヤノンアネルバ株式会社 | 半導体装置の製造方法及びスパッタ装置 |
-
2012
- 2012-12-28 US US14/369,833 patent/US20150009556A1/en not_active Abandoned
- 2012-12-28 CN CN201280065431.5A patent/CN104066867B/zh active Active
- 2012-12-28 JP JP2013551864A patent/JP6053179B2/ja active Active
- 2012-12-28 WO PCT/JP2012/084172 patent/WO2013100145A1/ja active Application Filing
- 2012-12-28 TW TW101151331A patent/TWI558832B/zh active
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CN104066867B (zh) | 2017-10-17 |
WO2013100145A1 (ja) | 2013-07-04 |
TWI558832B (zh) | 2016-11-21 |
JPWO2013100145A1 (ja) | 2015-05-11 |
TW201337019A (zh) | 2013-09-16 |
CN104066867A (zh) | 2014-09-24 |
US20150009556A1 (en) | 2015-01-08 |
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