JP5987105B2 - Itoスパッタリングターゲット及びその製造方法 - Google Patents

Itoスパッタリングターゲット及びその製造方法 Download PDF

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JP5987105B2
JP5987105B2 JP2015508113A JP2015508113A JP5987105B2 JP 5987105 B2 JP5987105 B2 JP 5987105B2 JP 2015508113 A JP2015508113 A JP 2015508113A JP 2015508113 A JP2015508113 A JP 2015508113A JP 5987105 B2 JP5987105 B2 JP 5987105B2
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target
bulk resistivity
difference
result
resistivity
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JPWO2014156234A1 (ja
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敏也 栗原
敏也 栗原
崇 掛野
崇 掛野
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JX Nippon Mining and Metals Corp
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    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • CCHEMISTRY; METALLURGY
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/086Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3293Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54Particle size related information
    • C04B2235/5409Particle size related information expressed by specific surface values
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54Particle size related information
    • C04B2235/5418Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6565Cooling rate
    • CCHEMISTRY; METALLURGY
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    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658Atmosphere during thermal treatment
    • C04B2235/6583Oxygen containing atmosphere, e.g. with changing oxygen pressures
    • C04B2235/6585Oxygen containing atmosphere, e.g. with changing oxygen pressures at an oxygen percentage above that of air

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
JP2015508113A 2013-03-29 2014-01-20 Itoスパッタリングターゲット及びその製造方法 Active JP5987105B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013071342 2013-03-29
JP2013071342 2013-03-29
PCT/JP2014/050912 WO2014156234A1 (ja) 2013-03-29 2014-01-20 Itoスパッタリングターゲット及びその製造方法

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JP5987105B2 true JP5987105B2 (ja) 2016-09-06
JPWO2014156234A1 JPWO2014156234A1 (ja) 2017-02-16

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TW (1) TWI608112B (zh)
WO (1) WO2014156234A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190096974A (ko) * 2018-02-08 2019-08-20 미쓰비시 마테리알 가부시키가이샤 산화물 스퍼터링 타깃, 및 산화물 스퍼터링 타깃의 제조 방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102030892B1 (ko) * 2014-11-07 2019-10-10 제이엑스금속주식회사 Ito 스퍼터링 타겟 및 그 제조 방법 그리고 ito 투명 도전막 및 ito 투명 도전막의 제조 방법
JPWO2016174877A1 (ja) * 2015-04-30 2018-02-22 三井金属鉱業株式会社 Itoスパッタリングターゲット材
JP6414165B2 (ja) * 2016-09-06 2018-10-31 三菱マテリアル株式会社 酸化物スパッタリングターゲット、及び酸化物スパッタリングターゲットの製造方法
TWI657159B (zh) * 2018-02-08 2019-04-21 日商三菱綜合材料股份有限公司 氧化物濺鍍靶及氧化物濺鍍靶之製造方法
CN114835485A (zh) * 2022-04-20 2022-08-02 柳州华锡有色设计研究院有限责任公司 一种利用精准配比氧气与氩气深度降低ito靶材电阻率的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0344465A (ja) * 1989-07-13 1991-02-26 Nippon Mining Co Ltd Ito透明導電膜用スパッタリングターゲットの製造方法
JP2000233969A (ja) * 1998-12-08 2000-08-29 Tosoh Corp Itoスパッタリングターゲットおよび透明導電膜の製造方法
JP2003301265A (ja) * 2002-02-08 2003-10-24 Tosoh Corp スパイク状突起のないito薄膜及びその製法並びにそれに用いるターゲット
JP2009040620A (ja) * 2007-08-06 2009-02-26 Mitsui Mining & Smelting Co Ltd Ito焼結体およびitoスパッタリングターゲット

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101080527B1 (ko) * 2005-09-20 2011-11-04 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟, 투명 도전막 및 투명 전극

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0344465A (ja) * 1989-07-13 1991-02-26 Nippon Mining Co Ltd Ito透明導電膜用スパッタリングターゲットの製造方法
JP2000233969A (ja) * 1998-12-08 2000-08-29 Tosoh Corp Itoスパッタリングターゲットおよび透明導電膜の製造方法
JP2003301265A (ja) * 2002-02-08 2003-10-24 Tosoh Corp スパイク状突起のないito薄膜及びその製法並びにそれに用いるターゲット
JP2009040620A (ja) * 2007-08-06 2009-02-26 Mitsui Mining & Smelting Co Ltd Ito焼結体およびitoスパッタリングターゲット

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190096974A (ko) * 2018-02-08 2019-08-20 미쓰비시 마테리알 가부시키가이샤 산화물 스퍼터링 타깃, 및 산화물 스퍼터링 타깃의 제조 방법
KR102115126B1 (ko) * 2018-02-08 2020-05-25 미쓰비시 마테리알 가부시키가이샤 산화물 스퍼터링 타깃, 및 산화물 스퍼터링 타깃의 제조 방법

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TWI608112B (zh) 2017-12-11
JPWO2014156234A1 (ja) 2017-02-16
TW201446998A (zh) 2014-12-16
WO2014156234A1 (ja) 2014-10-02

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