JP6347446B2 - 横結合型多重モードモノリシックフィルタ - Google Patents
横結合型多重モードモノリシックフィルタ Download PDFInfo
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- JP6347446B2 JP6347446B2 JP2014251091A JP2014251091A JP6347446B2 JP 6347446 B2 JP6347446 B2 JP 6347446B2 JP 2014251091 A JP2014251091 A JP 2014251091A JP 2014251091 A JP2014251091 A JP 2014251091A JP 6347446 B2 JP6347446 B2 JP 6347446B2
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
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- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
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- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02669—Edge reflection structures, i.e. resonating structures without metallic reflectors, e.g. Bleustein-Gulyaev-Shimizu [BGS], shear horizontal [SH], shear transverse [ST], Love waves devices
- H03H9/02677—Edge reflection structures, i.e. resonating structures without metallic reflectors, e.g. Bleustein-Gulyaev-Shimizu [BGS], shear horizontal [SH], shear transverse [ST], Love waves devices having specially shaped edges, e.g. stepped, U-shaped edges
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
12 グランド電極
14 圧電膜
16a,16b、16c 電極指
18 信号電極
20 逆相電極
21a、21b 電極指
22 ギャップ領域
24 凹部
26 誘電体膜
30 空隙
31 音響反射膜
Claims (11)
- 基板と、
前記基板上に形成された圧電膜と、
前記圧電膜の第1面側に形成されたグランド電極と、
前記圧電膜の前記第1面の反対の面である第2面側に形成され、各々が第1電極指および第2電極指を含み、互いに並列に接続された複数の信号電極と、
を具備し、
前記第1電極指および前記第2電極指は、互いに電位が異なり、
前記複数の信号電極のうち隣接する信号電極は、前記第1電極指のピッチおよび前記第2電極指のピッチより大きな距離離れていることを特徴とする横結合型多重モードモノリシックフィルタ。 - 前記隣接する信号電極の間において前記圧電膜の少なくとも一部が除去されていることを特徴とする請求項1記載の横結合型多重モードモノリシックフィルタ。
- 前記隣接する信号電極の間の前記圧電膜中に形成され、前記圧電膜とは異なる誘電体膜を具備することを特徴とする請求項1記載の横結合型多重モードモノリシックフィルタ。
- それぞれが前記隣接する信号電極に含まれる隣接する電極指は同電位であることを特徴とする請求項1から3のいずれか一項記載の横結合型多重モードモノリシックフィルタ。
- 前記複数の信号電極が単一の空隙上形成されるように前記グランド電極、前記圧電膜および前記複数の信号電極の下に、前記圧電膜を伝搬する弾性波を反射する前記空隙が形成されることを特徴とする請求項1から4のいずれか一項記載の横結合型多重モードモノリシックフィルタ。
- 前記複数の信号電極は、前記第1電極指および前記第2電極指の配列する方向に配列していることを特徴とする請求項1から5のいずれか一項記載の横結合型多重モードモノリシックフィルタ。
- 前記複数の信号電極はバンドパスフィルタとして機能することを特徴とする請求項1から6のいずれか一項記載の横結合型多重モードモノリシックフィルタ。
- 前記複数の信号電極のうち隣接する信号電極の間には、他の電極指の設けられていない領域であるギャップ領域が設けられていることを特徴とする請求項1から7のいずれか一項記載の横結合型多重モードモノリシックフィルタ。
- 前記信号電極は、前記第1電極指および前記第2電極指とは異なる電位の第3電極指を含むことを特徴とする請求項1から8のいずれか一項記載の横結合型多重モードモノリシックフィルタ。
- 前記複数の信号電極は、電気回路として並列接続されていることを特徴とする請求項1から9のいずれか一項記載の横結合型多重モードモノリシックフィルタ。
- 前記第1電極指のピッチおよび前記第2電極指のピッチは、各々平均値であることを特徴とする請求項1から10のいずれか一項記載の横結合型多重モードモノリシックフィルタ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014251091A JP6347446B2 (ja) | 2014-12-11 | 2014-12-11 | 横結合型多重モードモノリシックフィルタ |
US14/879,808 US9825609B2 (en) | 2014-12-11 | 2015-10-09 | Laterally coupled multi-mode monolithic filter |
CN201510920735.0A CN105703737B (zh) | 2014-12-11 | 2015-12-11 | 横向耦合多模单片滤波器 |
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JP2014251091A JP6347446B2 (ja) | 2014-12-11 | 2014-12-11 | 横結合型多重モードモノリシックフィルタ |
Publications (2)
Publication Number | Publication Date |
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JP2016115981A JP2016115981A (ja) | 2016-06-23 |
JP6347446B2 true JP6347446B2 (ja) | 2018-06-27 |
Family
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JP2014251091A Active JP6347446B2 (ja) | 2014-12-11 | 2014-12-11 | 横結合型多重モードモノリシックフィルタ |
Country Status (3)
Country | Link |
---|---|
US (1) | US9825609B2 (ja) |
JP (1) | JP6347446B2 (ja) |
CN (1) | CN105703737B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10483942B2 (en) * | 2017-01-24 | 2019-11-19 | Skyworks Solutions, Inc. | Acoustic wave device with acoustically separated multi-channel feedback |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5763921A (en) * | 1980-10-07 | 1982-04-17 | Toshiba Corp | Surface acoustic wave device |
JPH0716427U (ja) * | 1993-08-25 | 1995-03-17 | 沖電気工業株式会社 | 弾性表面波フィルタ共用器 |
JP3377902B2 (ja) * | 1996-02-22 | 2003-02-17 | 沖電気工業株式会社 | 弾性表面波フィルタ |
US6825794B2 (en) * | 2000-06-02 | 2004-11-30 | Research In Motion Limited | Wireless communication system using surface acoustic wave (SAW) second harmonic techniques |
JP2004336503A (ja) * | 2003-05-09 | 2004-11-25 | Fujitsu Media Device Kk | 弾性表面波素子及びその製造方法 |
EP1489740A3 (en) * | 2003-06-18 | 2006-06-28 | Matsushita Electric Industrial Co., Ltd. | Electronic component and method for manufacturing the same |
EP1871007B1 (en) * | 2005-04-13 | 2009-09-23 | Murata Manufacturing Co., Ltd. | Piezoelectric thin film filter |
JP2009188484A (ja) | 2008-02-04 | 2009-08-20 | Epson Toyocom Corp | 圧電フィルタ |
JP2009188599A (ja) | 2008-02-05 | 2009-08-20 | Epson Toyocom Corp | 多重モード圧電フィルタとその周波数調整方法 |
US9048812B2 (en) * | 2011-02-28 | 2015-06-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer |
JP5905677B2 (ja) * | 2011-08-02 | 2016-04-20 | 太陽誘電株式会社 | 圧電薄膜共振器およびその製造方法 |
US20130120081A1 (en) * | 2011-11-14 | 2013-05-16 | Qualcomm Mems Technologies, Inc. | Combined resonators and passive circuit components for filter passband flattening |
JP5873307B2 (ja) * | 2011-11-21 | 2016-03-01 | 太陽誘電株式会社 | フィルタおよび分波器 |
US20130134838A1 (en) * | 2011-11-28 | 2013-05-30 | Qualcomm Mems Technologies, Inc. | Piezoelectric mems transformer |
US9093979B2 (en) | 2012-06-05 | 2015-07-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Laterally-coupled acoustic resonators |
US9698753B2 (en) * | 2014-03-19 | 2017-07-04 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Laterally coupled resonator filter having apodized shape |
-
2014
- 2014-12-11 JP JP2014251091A patent/JP6347446B2/ja active Active
-
2015
- 2015-10-09 US US14/879,808 patent/US9825609B2/en active Active
- 2015-12-11 CN CN201510920735.0A patent/CN105703737B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US9825609B2 (en) | 2017-11-21 |
CN105703737A (zh) | 2016-06-22 |
JP2016115981A (ja) | 2016-06-23 |
US20160172573A1 (en) | 2016-06-16 |
CN105703737B (zh) | 2018-11-23 |
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