JP6869831B2 - 圧電薄膜共振器およびその製造方法、フィルタ並びにマルチプレクサ - Google Patents
圧電薄膜共振器およびその製造方法、フィルタ並びにマルチプレクサ Download PDFInfo
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- JP6869831B2 JP6869831B2 JP2017130356A JP2017130356A JP6869831B2 JP 6869831 B2 JP6869831 B2 JP 6869831B2 JP 2017130356 A JP2017130356 A JP 2017130356A JP 2017130356 A JP2017130356 A JP 2017130356A JP 6869831 B2 JP6869831 B2 JP 6869831B2
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- 238000001039 wet etching Methods 0.000 description 1
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Images
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- H03H9/02—Details
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- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
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- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
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- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
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- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
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- H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
図2(a)から図3(d)は、実施例1に係る圧電薄膜共振器の製造方法を示す断面図である。図2(a)に示すように、平坦主面を有する基板10上に空隙を形成するための犠牲層38を形成する。犠牲層38の膜厚は、例えば10〜100nmであり、MgO、ZnO、GeまたはSiO2等のエッチング液またはエッチングガスに容易に溶解できる材料から選択される。その後、犠牲層38を、フォトリソグラフィ法およびエッチング法を用い所望の形状にパターニングする。犠牲層38の形状は、空隙30の平面形状に相当する形状であり、例えば共振領域50となる領域を含む。次に、犠牲層38および基板10上に下部電極12として下層12aおよび上層12bを形成する。犠牲層38および下部電極12は、例えば、スパッタリング法、真空蒸着法またはCVD(Chemical Vapor Deposition)法を用い成膜される。その後、下部電極12を、フォトリソグラフィ法およびエッチング法を用い所望の形状にパターニングする。下部電極12は、リフトオフ法により形成してもよい。
図2(a)から図3(d)の製造方法で圧電薄膜共振器を作製すると、電気機械結合係数k2が低くなることがある。電気機械結合係数k2が低くなるのは、特定のウエハであったり、ウエハ内の一部の領域であったりする。そこで、サンプルAからCを以下とする。
サンプルA:電気機械結合係数k2が正常(7%前後)
サンプルB:電気機械結合係数k2が低い(5%以下)
サンプルC:挿入膜28を形成せず、大気暴露する。
その他のサンプルAからCの作製条件は、2GHzの共振周波数を有する圧電薄膜共振器として例示した条件である。
図14(a)および図14(b)は、実施例1の変形例1に係る共振領域付近の平面図である。図14(a)および図14(b)では、共振領域50と挿入膜28を図示している。図14(a)に示すように、挿入膜28は共振領域50内に複数設けられていてもよい。図14(b)に示すように挿入膜28は共振領域50外に設けられていてもよい。このように、挿入膜28は、下部圧電膜14aと上部圧電膜14bとの間に挿入されていればよい。
図15(b)に示すように、共振領域50の下部電極12下に音響反射膜31が形成されている。音響反射膜31は、音響インピーダンスの低い膜30aと音響インピーダンスの高い膜30bとが交互に設けられている。膜30aおよび30bの膜厚は例えばそれぞれλ/4(λは弾性波の波長)である。膜30aと膜30bの積層数は任意に設定できる。音響反射膜31は、音響特性の異なる少なくとも2種類の層が間隔をあけて積層されていればよい。また、基板10が音響反射膜31の音響特性の異なる少なくとも2種類の層のうちの1層であってもよい。例えば、音響反射膜31は、基板10中に音響インピーダンスの異なる膜が一層設けられている構成でもよい。その他の構成は、実施例1およびその変形例1と同じであり説明を省略する。
図15(c)は、実施例2の変形例2に係る圧電薄膜共振器の断面図である。図15(c)に示すように、下部電極12の引き出し領域において、上部圧電膜14bの端面は共振領域50の輪郭に略一致する。下部圧電膜14aの端面は共振領域50の輪郭より外側に位置する。その他の構成は実施例1と同じであり説明を省略する。
12 下部電極
14 圧電膜
14a 下部圧電膜
14b 上部圧電膜
16 上部電極
28 挿入膜
40 送信フィルタ
42 受信フィルタ
50 共振領域
52 外周領域
54 中央領域
Claims (7)
- 基板と、
前記基板上に設けられた下部電極および上部電極と、
前記下部電極上に設けられた窒化アルミニウムを主成分とする下部圧電膜と前記下部圧電膜上に設けられた窒化アルミニウムを主成分とする上部圧電膜とを有し、少なくとも一部を挟み下部電極と上部電極とが対向する共振領域の少なくとも一部の領域において前記下部圧電膜と前記上部圧電膜とが接し、前記下部圧電膜と前記上部圧電膜とが接する界面における弗素濃度が0.03原子%以下である圧電膜と、
前記少なくとも一部の領域以外の領域において前記下部圧電膜と前記上部圧電膜との間に設けられた酸化シリコンを含む絶縁膜と、
を具備する圧電薄膜共振器。 - 前記絶縁膜は、前記共振領域の外周領域の少なくとも一部に設けられ、前記共振領域の中央領域に設けられていない請求項1に記載の圧電薄膜共振器。
- 前記界面における炭素濃度は0.01原子%以下である請求項1または2に記載の圧電薄膜共振器。
- 請求項1から3のいずれか一項に記載の圧電薄膜共振器を含むフィルタ。
- 請求項4に記載のフィルタを含むマルチプレクサ。
- 基板上に下部電極を形成する工程と、
前記下部電極上に窒化アルミニウムを主成分とする下部圧電膜を形成する工程と、
前記下部圧電膜上に酸化シリコンを含む絶縁膜を形成する工程と、
弗素を含むエッチングガスを用い前記絶縁膜をエッチングする工程と、
前記絶縁膜をエッチングする工程の後、前記下部圧電膜の上面の弗素を低減させる工程と、
前記弗素を低減させる工程の後、前記下部圧電膜の上面に接するように窒化アルミニウムを主成分とする上部圧電膜を形成する工程と、
前記上部圧電膜上に、前記下部電極とで前記下部圧電膜および前記上部圧電膜の少なくとも一部を挟む共振領域の少なくとも一部の領域において前記下部圧電膜と前記上部圧電膜とが接するように上部電極を形成する工程と、
を含み、
前記弗素を低減させる工程は、前記下部圧電膜と前記上部圧電膜とが接する界面における弗素濃度が0.03原子%以下となるように前記弗素を低減させる工程である圧電薄膜共振器の製造方法。 - 前記絶縁膜をエッチングする工程は、フォトレジストをマスクに前記絶縁膜をエッチングする工程と、前記フォトレジストを除去する工程と、を含む請求項6に記載の圧電薄膜共振器の製造方法。
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