JP5876172B1 - 酸化物焼結体、酸化物スパッタリングターゲット及び導電性酸化物薄膜並びに酸化物焼結体の製造方法 - Google Patents

酸化物焼結体、酸化物スパッタリングターゲット及び導電性酸化物薄膜並びに酸化物焼結体の製造方法 Download PDF

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Publication number: JP5876172B1
Authority: JP; Japan
Prior art keywords: oxide; sintered body; film; sputtering; powder
Prior art date: 2014-10-06
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2015012019A

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English (en)

Japanese (ja)

Other versions

JP2016074579A (ja

Inventor

淳史奈良

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

JX Nippon Mining and Metals Corp

Original Assignee

JX Nippon Mining and Metals Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2014-10-06

Filing date

2015-01-26

Publication date

2016-03-02

2015-01-26 Application filed by JX Nippon Mining and Metals Corp filed Critical JX Nippon Mining and Metals Corp

2015-01-26 Priority to JP2015012019A priority Critical patent/JP5876172B1/ja

2015-08-20 Priority to TW104127113A priority patent/TWI537404B/zh

2015-10-05 Priority to KR1020150139701A priority patent/KR101668963B1/ko

2015-10-08 Priority to CN201510646309.2A priority patent/CN105481352A/zh

2015-10-08 Priority to CN201811061549.6A priority patent/CN109437856A/zh

2016-03-02 Application granted granted Critical

2016-03-02 Publication of JP5876172B1 publication Critical patent/JP5876172B1/ja

2016-05-12 Publication of JP2016074579A publication Critical patent/JP2016074579A/ja

Status Active legal-status Critical Current

2035-01-26 Anticipated expiration legal-status Critical

Links

238000004519 manufacturing process Methods 0.000 title claims description 6
239000010409 thin film Substances 0.000 title abstract description 33
238000005477 sputtering target Methods 0.000 title abstract description 16
239000010936 titanium Substances 0.000 claims abstract description 56
239000011701 zinc Substances 0.000 claims abstract description 40
229910052718 tin Inorganic materials 0.000 claims abstract description 22
229910052738 indium Inorganic materials 0.000 claims abstract description 17
229910052719 titanium Inorganic materials 0.000 claims abstract description 17
230000008033 biological extinction Effects 0.000 claims abstract description 15
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 12
239000001301 oxygen Substances 0.000 claims abstract description 11
229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
229910052725 zinc Inorganic materials 0.000 claims abstract description 10
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 8
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 8
JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims abstract description 8
239000000843 powder Substances 0.000 claims description 67
230000003287 optical effect Effects 0.000 claims description 36
239000012298 atmosphere Substances 0.000 claims description 12
239000002994 raw material Substances 0.000 claims description 10
238000005245 sintering Methods 0.000 claims description 10
239000011261 inert gas Substances 0.000 claims description 6
239000012528 membrane Substances 0.000 claims description 3
238000000465 moulding Methods 0.000 claims description 2
239000010408 film Substances 0.000 abstract description 73
238000004544 sputter deposition Methods 0.000 abstract description 41
238000002834 transmittance Methods 0.000 abstract description 21
XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 31
239000011787 zinc oxide Substances 0.000 description 16
239000000203 mixture Substances 0.000 description 14
229910010413 TiO 2 Inorganic materials 0.000 description 13
229910006404 SnO 2 Inorganic materials 0.000 description 12
239000000463 material Substances 0.000 description 12
230000015572 biosynthetic process Effects 0.000 description 11
239000011812 mixed powder Substances 0.000 description 11
239000012300 argon atmosphere Substances 0.000 description 10
238000002156 mixing Methods 0.000 description 10
239000002245 particle Substances 0.000 description 9
230000000052 comparative effect Effects 0.000 description 8
238000011156 evaluation Methods 0.000 description 8
238000000034 method Methods 0.000 description 7
238000010298 pulverizing process Methods 0.000 description 7
238000002425 crystallisation Methods 0.000 description 6
230000008025 crystallization Effects 0.000 description 6
230000031700 light absorption Effects 0.000 description 6
229910052751 metal Inorganic materials 0.000 description 6
239000002184 metal Substances 0.000 description 6
239000011324 bead Substances 0.000 description 5
238000005530 etching Methods 0.000 description 5
239000000758 substrate Substances 0.000 description 5
230000006872 improvement Effects 0.000 description 4
230000000694 effects Effects 0.000 description 3
238000005259 measurement Methods 0.000 description 3
238000001552 radio frequency sputter deposition Methods 0.000 description 3
238000002441 X-ray diffraction Methods 0.000 description 2
238000010521 absorption reaction Methods 0.000 description 2
230000033228 biological regulation Effects 0.000 description 2
238000006243 chemical reaction Methods 0.000 description 2
239000000470 constituent Substances 0.000 description 2
238000011160 research Methods 0.000 description 2
239000000523 sample Substances 0.000 description 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
241001089723 Metaphycus omega Species 0.000 description 1
229910007541 Zn O Inorganic materials 0.000 description 1
JODIJOMWCAXJJX-UHFFFAOYSA-N [O-2].[Al+3].[O-2].[Zn+2] Chemical compound [O-2].[Al+3].[O-2].[Zn+2] JODIJOMWCAXJJX-UHFFFAOYSA-N 0.000 description 1
AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
239000002253 acid Substances 0.000 description 1
150000007513 acids Chemical class 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
238000001354 calcination Methods 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
239000002131 composite material Substances 0.000 description 1
238000013329 compounding Methods 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000000280 densification Methods 0.000 description 1
238000001739 density measurement Methods 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
229910052733 gallium Inorganic materials 0.000 description 1
239000007789 gas Substances 0.000 description 1
239000011521 glass Substances 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000009616 inductively coupled plasma Methods 0.000 description 1
238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
239000012788 optical film Substances 0.000 description 1
150000002926 oxygen Chemical class 0.000 description 1
230000035699 permeability Effects 0.000 description 1
238000003825 pressing Methods 0.000 description 1
230000009467 reduction Effects 0.000 description 1
238000001028 reflection method Methods 0.000 description 1
230000004044 response Effects 0.000 description 1
238000005070 sampling Methods 0.000 description 1
230000009291 secondary effect Effects 0.000 description 1
238000001228 spectrum Methods 0.000 description 1
238000003860 storage Methods 0.000 description 1
238000003786 synthesis reaction Methods 0.000 description 1
239000012780 transparent material Substances 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
UMIKMTIOESTGKJ-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[O-2].[In+3].[O-2].[Zn+2] UMIKMTIOESTGKJ-UHFFFAOYSA-N 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9646—Optical properties
- C04B2235/9653—Translucent or transparent ceramics other than alumina

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Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Ceramic Engineering (AREA)
Manufacturing & Machinery (AREA)
Organic Chemistry (AREA)
Materials Engineering (AREA)
Structural Engineering (AREA)
Inorganic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Physical Vapour Deposition (AREA)
Compositions Of Oxide Ceramics (AREA)

JP2015012019A 2014-10-06 2015-01-26 酸化物焼結体、酸化物スパッタリングターゲット及び導電性酸化物薄膜並びに酸化物焼結体の製造方法 Active JP5876172B1 (ja)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
JP2015012019A JP5876172B1 (ja)	2014-10-06	2015-01-26	酸化物焼結体、酸化物スパッタリングターゲット及び導電性酸化物薄膜並びに酸化物焼結体の製造方法
TW104127113A TWI537404B (zh)	2014-10-06	2015-08-20	Oxide sintered body, oxide sputtering target, and method for producing conductive oxide film and oxide sintered body
KR1020150139701A KR101668963B1 (ko)	2014-10-06	2015-10-05	산화물 소결체 및 그 제조 방법, 산화물 스퍼터링 타깃 그리고 도전성 산화물 박막
CN201510646309.2A CN105481352A (zh)	2014-10-06	2015-10-08	氧化物烧结体、氧化物溅射靶和导电性氧化物薄膜以及氧化物烧结体的制造方法
CN201811061549.6A CN109437856A (zh)	2014-10-06	2015-10-08	氧化物烧结体、氧化物溅射靶和导电性氧化物薄膜以及氧化物烧结体的制造方法

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2014205403		2014-10-06
JP2014205403		2014-10-06
JP2015012019A JP5876172B1 (ja)	2014-10-06	2015-01-26	酸化物焼結体、酸化物スパッタリングターゲット及び導電性酸化物薄膜並びに酸化物焼結体の製造方法

Publications (2)

Publication Number	Publication Date
JP5876172B1 true JP5876172B1 (ja)	2016-03-02
JP2016074579A JP2016074579A (ja)	2016-05-12

Family

ID=55434716

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2015012019A Active JP5876172B1 (ja)	2014-10-06	2015-01-26	酸化物焼結体、酸化物スパッタリングターゲット及び導電性酸化物薄膜並びに酸化物焼結体の製造方法

Country Status (4)

Country	Link
JP (1)	JP5876172B1 (ko)
KR (1)	KR101668963B1 (ko)
CN (2)	CN109437856A (ko)
TW (1)	TWI537404B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP7086080B2 (ja) *	2017-08-08	2022-06-17	三井金属鉱業株式会社	酸化物焼結体およびスパッタリングターゲット
JP2019131866A (ja) *	2018-01-31	2019-08-08	住友金属鉱山株式会社	酸化物スパッタ膜、酸化物スパッタ膜の製造方法、酸化物焼結体及び透明樹脂基板
TWI819633B (zh) *	2022-05-31	2023-10-21	光洋應用材料科技股份有限公司	氧化銦鈦鋅濺鍍靶材、其薄膜及其製法

Citations (5)

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JPH0971860A (ja) *	1995-06-28	1997-03-18	Idemitsu Kosan Co Ltd	ターゲットおよびその製造方法
WO2010058533A1 (ja) *	2008-11-20	2010-05-27	出光興産株式会社	ＺｎＯ－ＳｎＯ２－Ｉｎ２Ｏ３系酸化物焼結体及び非晶質透明導電膜
WO2012153507A1 (ja) *	2011-05-10	2012-11-15	出光興産株式会社	Ｉｎ２Ｏ３－ＳｎＯ２－ＺｎＯ系スパッタリングターゲット
JP2014109071A (ja) *	2012-12-03	2014-06-12	Solar Applied Materials Technology Corp	スパッタリングターゲット
JP2014111818A (ja) *	2012-11-09	2014-06-19	Idemitsu Kosan Co Ltd	スパッタリングターゲット、酸化物半導体薄膜及びそれらの製造方法

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US7141186B2 (en) *	2002-10-29	2006-11-28	Sumitomo Metal Mining Co., Ltd.	Oxide sintered body and sputtering target, and manufacturing method for transparent conductive oxide film as electrode
JP4933756B2 (ja) *	2005-09-01	2012-05-16	出光興産株式会社	スパッタリングターゲット
JP4994068B2 (ja)	2006-08-09	2012-08-08	出光興産株式会社	酸化物導電性材料及びその製造方法
JP2013220805A (ja)	2012-04-19	2013-10-28	Toyota Boshoku Corp	車室の吹出口構造

2015
- 2015-01-26 JP JP2015012019A patent/JP5876172B1/ja active Active
- 2015-08-20 TW TW104127113A patent/TWI537404B/zh active
- 2015-10-05 KR KR1020150139701A patent/KR101668963B1/ko active IP Right Grant
- 2015-10-08 CN CN201811061549.6A patent/CN109437856A/zh active Pending
- 2015-10-08 CN CN201510646309.2A patent/CN105481352A/zh active Pending

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0971860A (ja) *	1995-06-28	1997-03-18	Idemitsu Kosan Co Ltd	ターゲットおよびその製造方法
WO2010058533A1 (ja) *	2008-11-20	2010-05-27	出光興産株式会社	ＺｎＯ－ＳｎＯ２－Ｉｎ２Ｏ３系酸化物焼結体及び非晶質透明導電膜
WO2012153507A1 (ja) *	2011-05-10	2012-11-15	出光興産株式会社	Ｉｎ２Ｏ３－ＳｎＯ２－ＺｎＯ系スパッタリングターゲット
JP2014111818A (ja) *	2012-11-09	2014-06-19	Idemitsu Kosan Co Ltd	スパッタリングターゲット、酸化物半導体薄膜及びそれらの製造方法
JP2014109071A (ja) *	2012-12-03	2014-06-12	Solar Applied Materials Technology Corp	スパッタリングターゲット

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Publication number	Publication date
TWI537404B (zh)	2016-06-11
TW201614084A (en)	2016-04-16
KR101668963B1 (ko)	2016-10-24
KR20160041013A (ko)	2016-04-15
CN109437856A (zh)	2019-03-08
CN105481352A (zh)	2016-04-13
JP2016074579A (ja)	2016-05-12

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Publication	Publication Date	Title
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