JP5829975B2 - 半導体デバイスおよびSiCトランジスタ - Google Patents
半導体デバイスおよびSiCトランジスタ Download PDFInfo
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- JP5829975B2 JP5829975B2 JP2012120452A JP2012120452A JP5829975B2 JP 5829975 B2 JP5829975 B2 JP 5829975B2 JP 2012120452 A JP2012120452 A JP 2012120452A JP 2012120452 A JP2012120452 A JP 2012120452A JP 5829975 B2 JP5829975 B2 JP 5829975B2
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- 239000004065 semiconductor Substances 0.000 title claims description 45
- 108091006146 Channels Proteins 0.000 claims description 62
- 230000005684 electric field Effects 0.000 claims description 26
- 108010075750 P-Type Calcium Channels Proteins 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 178
- 239000011295 pitch Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 12
- 230000002441 reversible effect Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 230000000670 limiting effect Effects 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
Description
2 電圧制限部
3 n型基板
4 n型ドリフト層
5 格子
6 P型領域
7 n型ドリフト層
8 シリコン層
9 金属の層
10 開口部
11 ソース領域層
12 深い基層
13 表面層
16 ソース(電源)
17 絶縁層
18 ゲート電極
19 ドリフト層
Claims (5)
- 絶縁ゲート型のSiCトランジスタであって、
第一の側面と、前記第一の側面に対向する第二の側面とを有するn型のドリフト層(4、7)と、
前記n型のドリフト層の前記第一の側面上のドレイン接点(3)と、
前記n型のドリフト層の前記第二の側面に接触するp型のチャンネル領域層(15)と、
ソース接点(16)と、
前記p型のチャンネル領域層を貫通して前記n型のドリフト層中まで延在する第1のトレンチと、
前記第1のトレンチの側壁に接触する絶縁層(17)であって、垂直なチャンネルが前記絶縁層と前記チャンネル領域層との間の境界面における前記チャンネル領域層の中に形成されている絶縁層と、
前記絶縁層に接するゲート電極(18)と、
前記第1のトレンチに近接する前記チャンネル領域層を貫通して延在する第2のトレンチ(26)であって、前記第2のトレンチは、前記n型のドリフト層の内部に底部を有し、前記第1のトレンチから隔離されている、前記第2のトレンチと、
前記第2のトレンチの下方の前記ドリフト層(4、7)中にあり、前記第1のトレンチの前記側壁から横方向に間隔をあけて配置されたp型の埋め込み領域(27)とを備え、
前記p型の埋め込み領域(27)は、前記チャンネル領域層(15)の下で前記第2のトレンチから離れ、前記第1のトレンチに向かって横方向に延在する
ことを特徴とするSiCトランジスタ。 - 前記チャンネル領域層(15)に接触するn型のソース領域層(11)をさらに備え、前記ソース接点(16)が前記ソース領域層(11)に接触し、前記第1のトレンチが前記ソース領域層(11)を貫通して延在することを特徴とする請求項1に記載のSiCトランジスタ。
- 前記p型の埋め込み領域(27)が、前記SiCトランジスタの遮断状態において前記チャンネル領域層(15)が受け持つべき電界を減少させるp型の層を形成するようになっていることを特徴とする請求項2に記載のSiCトランジスタ。
- 前記p型の埋め込み領域(27)が前記ドリフト層と比較して高ドーピング処理されていることを特徴とする請求項1乃至請求項3のいずれか一項に記載のSiCトランジスタ。
- 前記チャンネル領域層(15)が前記p型の埋め込み領域(27)と比較して低ドーピング処理されていることを特徴とする請求項1乃至請求項4のいずれか一項に記載のSiCトランジスタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9704149A SE9704149D0 (sv) | 1997-11-13 | 1997-11-13 | A semiconductor device of SiC and a transistor of SiC having an insulated gate |
SE9704149-5 | 1997-11-13 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000521555A Division JP2001523895A (ja) | 1997-11-13 | 1998-11-13 | 半導体デバイスおよびSiCトランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012191229A JP2012191229A (ja) | 2012-10-04 |
JP5829975B2 true JP5829975B2 (ja) | 2015-12-09 |
Family
ID=20408960
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000521555A Pending JP2001523895A (ja) | 1997-11-13 | 1998-11-13 | 半導体デバイスおよびSiCトランジスタ |
JP2012120452A Expired - Lifetime JP5829975B2 (ja) | 1997-11-13 | 2012-05-28 | 半導体デバイスおよびSiCトランジスタ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000521555A Pending JP2001523895A (ja) | 1997-11-13 | 1998-11-13 | 半導体デバイスおよびSiCトランジスタ |
Country Status (5)
Country | Link |
---|---|
US (1) | US6091108A (ja) |
EP (2) | EP1029363A2 (ja) |
JP (2) | JP2001523895A (ja) |
SE (1) | SE9704149D0 (ja) |
WO (1) | WO1999026296A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11545585B2 (en) | 2020-08-21 | 2023-01-03 | Monolithic Power Systems, Inc. | Single sided channel mesa power junction field effect transistor |
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1997
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- 1997-11-17 US US08/971,682 patent/US6091108A/en not_active Expired - Lifetime
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- 1998-11-13 EP EP98956064A patent/EP1029363A2/en not_active Ceased
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US11545585B2 (en) | 2020-08-21 | 2023-01-03 | Monolithic Power Systems, Inc. | Single sided channel mesa power junction field effect transistor |
US11869982B2 (en) | 2020-08-21 | 2024-01-09 | Monolithic Power Systems, Inc. | Single sided channel mesa power junction field effect transistor |
Also Published As
Publication number | Publication date |
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WO1999026296A3 (en) | 1999-07-29 |
EP1029363A2 (en) | 2000-08-23 |
SE9704149D0 (sv) | 1997-11-13 |
WO1999026296A2 (en) | 1999-05-27 |
EP2144277A3 (en) | 2010-03-17 |
JP2001523895A (ja) | 2001-11-27 |
EP2144277A2 (en) | 2010-01-13 |
JP2012191229A (ja) | 2012-10-04 |
US6091108A (en) | 2000-07-18 |
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