CH436492A - Steuerbare Halbleitervorrichtung mit mehreren Schichten - Google Patents
Steuerbare Halbleitervorrichtung mit mehreren SchichtenInfo
- Publication number
- CH436492A CH436492A CH1455465A CH1455465A CH436492A CH 436492 A CH436492 A CH 436492A CH 1455465 A CH1455465 A CH 1455465A CH 1455465 A CH1455465 A CH 1455465A CH 436492 A CH436492 A CH 436492A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor device
- layer semiconductor
- controllable multi
- controllable
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/139—Schottky barrier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1455465A CH436492A (de) | 1965-10-21 | 1965-10-21 | Steuerbare Halbleitervorrichtung mit mehreren Schichten |
DE19651489667 DE1489667A1 (de) | 1965-10-21 | 1965-11-08 | Steuerbares Halbleiterventil mit mehreren Schichten |
FR80520A FR1499519A (fr) | 1965-10-21 | 1966-10-19 | Soupapes à semi-conducteur commandées avec plusieurs couches |
GB46740/66A GB1156997A (en) | 1965-10-21 | 1966-10-19 | Improvements in and relating to Controllable Semi-Conductor Devices |
US860844A US3571675A (en) | 1965-10-21 | 1969-09-24 | Controlled semi-conductor wafer having adjacent layers of different doping concentrations and charged insert grid |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1455465A CH436492A (de) | 1965-10-21 | 1965-10-21 | Steuerbare Halbleitervorrichtung mit mehreren Schichten |
Publications (1)
Publication Number | Publication Date |
---|---|
CH436492A true CH436492A (de) | 1967-05-31 |
Family
ID=4401779
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1455465A CH436492A (de) | 1965-10-21 | 1965-10-21 | Steuerbare Halbleitervorrichtung mit mehreren Schichten |
Country Status (5)
Country | Link |
---|---|
US (1) | US3571675A (de) |
CH (1) | CH436492A (de) |
DE (1) | DE1489667A1 (de) |
FR (1) | FR1499519A (de) |
GB (1) | GB1156997A (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4060821A (en) * | 1976-06-21 | 1977-11-29 | General Electric Co. | Field controlled thyristor with buried grid |
EP0034166A1 (de) * | 1979-08-10 | 1981-08-26 | Massachusetts Inst Technology | Eingebettete schichtentechnologie für halbleiter. |
FR2514949A1 (fr) * | 1981-10-16 | 1983-04-22 | Thomson Csf | Transistor a effet de champ a canal vertical |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5510984B2 (de) * | 1972-11-29 | 1980-03-21 | ||
JPS54757B2 (de) * | 1973-03-23 | 1979-01-16 | ||
US4086611A (en) * | 1975-10-20 | 1978-04-25 | Semiconductor Research Foundation | Static induction type thyristor |
JPS5250175A (en) * | 1975-10-20 | 1977-04-21 | Semiconductor Res Found | Electrostatic induction type thyristor |
JPS5250176A (en) * | 1975-10-20 | 1977-04-21 | Semiconductor Res Found | Electrostatic induction type thyristor |
US4132996A (en) * | 1976-11-08 | 1979-01-02 | General Electric Company | Electric field-controlled semiconductor device |
DE2926741C2 (de) * | 1979-07-03 | 1982-09-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Feldeffekt-Transistor und Verfahren zu seiner Herstellung |
US5032538A (en) * | 1979-08-10 | 1991-07-16 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology utilizing selective epitaxial growth methods |
US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
JPS5917547B2 (ja) * | 1981-09-05 | 1984-04-21 | 財団法人半導体研究振興会 | サイリスタ |
JPS61198779A (ja) * | 1985-02-28 | 1986-09-03 | Res Dev Corp Of Japan | 両面ゲ−ト静電誘導サイリスタ及びその製造方法 |
US4641164A (en) * | 1986-05-30 | 1987-02-03 | Rca Corporation | Bidirectional vertical power MOS device and fabrication method |
US4700460A (en) * | 1986-05-30 | 1987-10-20 | Rca Corporation | Method for fabricating bidirectional vertical power MOS device |
SE9704149D0 (sv) * | 1997-11-13 | 1997-11-13 | Abb Research Ltd | A semiconductor device of SiC and a transistor of SiC having an insulated gate |
ATE386339T1 (de) * | 1998-11-18 | 2008-03-15 | Infineon Technologies Ag | Halbleiterbauelement mit dielektrischen oder halbisolierenden abschirmstrukturen |
EP1005092A1 (de) * | 1998-11-26 | 2000-05-31 | STMicroelectronics S.r.l. | PN-übergangstruktur für hohe Durchbruchspannungen und diesbezügliches Herstellungsverfahren |
US20110284949A1 (en) * | 2010-05-24 | 2011-11-24 | National Chiao Tung University | Vertical transistor and a method of fabricating the same |
US20150318346A1 (en) * | 2011-11-30 | 2015-11-05 | Xingbi Chen | Semiconductor device with voltage-sustaining region constructed by semiconductor and insulator containing conductive regions |
JP6414159B2 (ja) * | 2016-07-29 | 2018-10-31 | トヨタ自動車株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1079204A (en) * | 1963-12-24 | 1967-08-16 | Hughes Aircraft Co | Improvements in and relating to thin film electrical devices |
US3484662A (en) * | 1965-01-15 | 1969-12-16 | North American Rockwell | Thin film transistor on an insulating substrate |
-
1965
- 1965-10-21 CH CH1455465A patent/CH436492A/de unknown
- 1965-11-08 DE DE19651489667 patent/DE1489667A1/de active Pending
-
1966
- 1966-10-19 FR FR80520A patent/FR1499519A/fr not_active Expired
- 1966-10-19 GB GB46740/66A patent/GB1156997A/en not_active Expired
-
1969
- 1969-09-24 US US860844A patent/US3571675A/en not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4060821A (en) * | 1976-06-21 | 1977-11-29 | General Electric Co. | Field controlled thyristor with buried grid |
EP0034166A1 (de) * | 1979-08-10 | 1981-08-26 | Massachusetts Inst Technology | Eingebettete schichtentechnologie für halbleiter. |
EP0034166A4 (de) * | 1979-08-10 | 1984-04-27 | Massachusetts Inst Technology | Eingebettete schichtentechnologie für halbleiter. |
FR2514949A1 (fr) * | 1981-10-16 | 1983-04-22 | Thomson Csf | Transistor a effet de champ a canal vertical |
EP0077706A1 (de) * | 1981-10-16 | 1983-04-27 | Thomson-Csf | Feldeffekttransistor mit vertikalem Kanal |
Also Published As
Publication number | Publication date |
---|---|
DE1489667A1 (de) | 1969-10-02 |
GB1156997A (en) | 1969-07-02 |
FR1499519A (fr) | 1967-10-27 |
US3571675A (en) | 1971-03-23 |
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