JP5800107B2 - 炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置 Download PDFInfo
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- JP5800107B2 JP5800107B2 JP2015501252A JP2015501252A JP5800107B2 JP 5800107 B2 JP5800107 B2 JP 5800107B2 JP 2015501252 A JP2015501252 A JP 2015501252A JP 2015501252 A JP2015501252 A JP 2015501252A JP 5800107 B2 JP5800107 B2 JP 5800107B2
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 115
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 114
- 239000004065 semiconductor Substances 0.000 title claims description 68
- 230000005527 interface trap Effects 0.000 claims description 125
- 230000007547 defect Effects 0.000 claims description 66
- 229910052710 silicon Inorganic materials 0.000 claims description 46
- 229910052739 hydrogen Inorganic materials 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 40
- 239000001257 hydrogen Substances 0.000 claims description 38
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 37
- 239000010410 layer Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 239000002344 surface layer Substances 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 1
- 238000003763 carbonization Methods 0.000 claims 1
- 229910052740 iodine Inorganic materials 0.000 claims 1
- 239000011630 iodine Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 45
- 238000010405 reoxidation reaction Methods 0.000 description 34
- 238000003949 trap density measurement Methods 0.000 description 29
- 229910052760 oxygen Inorganic materials 0.000 description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 27
- 239000001301 oxygen Substances 0.000 description 27
- 238000005121 nitriding Methods 0.000 description 26
- 238000007254 oxidation reaction Methods 0.000 description 26
- 239000007789 gas Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 19
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 18
- 230000007423 decrease Effects 0.000 description 14
- 230000003647 oxidation Effects 0.000 description 14
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000002485 combustion reaction Methods 0.000 description 9
- 229960001730 nitrous oxide Drugs 0.000 description 6
- 125000004430 oxygen atom Chemical group O* 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 235000013842 nitrous oxide Nutrition 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004868 gas analysis Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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Description
まず、この発明の実施の形態1における炭化珪素半導体装置の素子構造を説明する。図1は、この発明の実施の形態1に係る炭化珪素半導体装置を示す断面図である。本実施の形態では、炭化珪素半導体装置の一例として、nチャネル炭化珪素MOSFETを説明する。
図21は、本実施の形態2に係る炭化珪素半導体装置においてMOS界面付近を拡大した断面図である。本実施の形態では、ゲート絶縁膜5が、窒素原子を含むことを特徴とする。それ以外については、実施の形態1と同様である。本実施の形態によれば、閾値電圧をより向上することが出来る。
Claims (9)
- 炭化珪素基板の表面上に形成された第1導電型のドリフト層と、
前記ドリフト層の表層部に、互いに間隔をあけて形成された複数の第2導電型のウェル領域と、
前記ウェル領域の表層部の一部に形成された第1導電型のソース領域と、
前記ウェル領域と前記ソース領域の表面に形成されたゲート絶縁膜と、
前記ゲート絶縁膜の表面に、前記ソース領域の端部と前記ウェル領域とに対向するように形成されたゲート電極と、
を備え、
前記ゲート絶縁膜と前記ウェル領域との界面領域に形成された界面トラップの密度をDit[cm−2eV−1]、炭化珪素の導電帯のエネルギー準位Ecからの深さである前記界面トラップのエネルギー準位を(Ec−E)[eV]、前記界面トラップのエネルギー準位が∞[eV]において前記界面トラップの密度Ditが漸近する値を係数A[cm−2eV−1]、係数B[cm−2eV−1]を前記界面トラップのエネルギー準位が0[eV]のときに前記界面トラップの密度Ditが(A+B)[cm−2eV−1]と等しくなる値とし、さらに、X[eV]を係数とすると、数1において、前記界面トラップのエネルギー準位が0.1eV以上0.4eV以下の範囲内での前記係数X[eV]が、0.09eV以上0.13eV以下であり、
前記界面トラップのエネルギー準位が0.1eVのときの前記界面トラップの密度を基準値Dit1[cm−2eV−1]とし、前記界面トラップのエネルギー準位が0.2eVのときの前記界面トラップの密度とDit1[cm−2eV−1]との差をDit2[cm−2eV−1]とし、前記界面トラップのエネルギー準位が0.8eVのときの前記界面トラップの密度とDit1[cm−2eV−1]との差をDit8[cm−2eV−1]、Dit2[cm−2eV−1]とDit8[cm−2eV−1]との比を比率Rとすると、数2において、比率Rが0.54以上0.67以下であること、
を特徴とする炭化珪素半導体装置。
- 前記ゲート絶縁膜は、前記ウェル領域との界面領域において、珪素と水素の結合を含む欠陥を有し、
前記界面トラップは、前記欠陥によって形成される炭化珪素の導電帯端より深いエネルギー準位をもつ第1のトラップを含むこと、
を特徴とする請求項1に記載の炭化珪素半導体装置。 - 前記第1のトラップは、炭化珪素の導電帯端から0.6eV以上1.5eV以下の深さにエネルギー準位を有すること、
を特徴とする請求項2に記載の炭化珪素半導体装置。 - 炭化珪素基板の表面上に形成された第1導電型のドリフト層と、
前記ドリフト層の表層部に、互いに間隔をあけて形成された複数の第2導電型のウェル領域と、
前記ウェル領域の表層部の一部に形成された第1導電型のソース領域と、
前記ウェル領域と前記ソース領域の表面に形成されたゲート絶縁膜と、
前記ゲート絶縁膜の表面に、前記ソース領域の端部と前記ウェル領域とに対向するように形成されたゲート電極と、
を備え、
前記ゲート絶縁膜と前記ウェル領域との界面領域に形成された界面トラップのうち、炭化珪素の導電帯端からのエネルギー準位が0.1eVのときの前記界面トラップの密度を基準値D it 1[cm −2 eV −1 ]とし、前記導電帯端からのエネルギー準位が0.2eVのときの前記界面トラップの密度とD it 1[cm −2 eV −1 ]との差をD it 2[cm −2 eV −1 ]とし、前記導電帯端からのエネルギー準位が0.8eVのときの前記界面トラップの密度とD it 1[cm −2 eV −1 ]との差をD it 8[cm −2 eV −1 ]とし、D it 2[cm −2 eV −1 ]とD it 8[cm −2 eV −1 ]との比を比率Rとすると、数2において、比率Rが0.54以上0.67以下であり、
前記ゲート絶縁膜は、前記ウェル領域との界面領域において、珪素と水素の結合を含む欠陥を有し、
前記界面トラップは、前記欠陥によって形成され、かつ前記導電帯端から0.6eV以上1.5eV以下の深さにエネルギー準位をもつ第1のトラップを含むこと、
を特徴とする炭化珪素半導体装置。
- 炭化珪素基板の表面上に形成された第1導電型のドリフト層と、
前記ドリフト層の表層部に、互いに間隔をあけて形成された複数の第2導電型のウェル領域と、
前記ウェル領域の表層部の一部に形成された第1導電型のソース領域と、
前記ウェル領域と前記ソース領域の表面に形成されたゲート絶縁膜と、
前記ゲート絶縁膜の表面に、前記ソース領域の端部と前記ウェル領域とに対向するように形成されたゲート電極と、
を備え、
前記ゲート絶縁膜と前記ウェル領域との界面領域に形成された界面トラップのうち、炭化珪素の導電帯端からのエネルギー準位が0.8eVのときの前記界面トラップの密度が1×10 11 cm −2 eV −1 以上であり、
前記ゲート絶縁膜は、前記ウェル領域との界面領域において、珪素と水素の結合を含む欠陥を有し、
前記界面トラップは、前記欠陥によって形成され、かつ前記導電帯端から0.6eV以上1.5eV以下の深さにエネルギー準位をもつ第1のトラップを含むこと、
を特徴とする炭化珪素半導体装置。 - 前記ゲート絶縁膜中に、珪素と水素の結合を含む欠陥によって形成される第2のトラップをさらに有すること、
を特徴とする請求項1乃至5のいずれか1項に記載の炭化珪素半導体装置。 - 前記ゲート絶縁膜は、前記ウェル領域との界面領域に窒素原子を含有すること
を特徴とする請求項1乃至6のいずれか1項に記載の炭化珪素半導体装置。 - 前記ゲート絶縁膜は、SiO2膜であること
を特徴とする請求項1乃至7のいずれか1項に記載の炭化珪素半導体装置。 - 前記ウェル領域は、チャネルが形成される領域に第1導電型のチャネル領域を備えたこと
を特徴とする請求項1乃至8のいずれか1項に記載の炭化珪素半導体装置。
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