JP2011176158A - 半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 42
- 238000002485 combustion reaction Methods 0.000 claims abstract description 40
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 17
- 239000001257 hydrogen Substances 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 14
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 60
- 230000003647 oxidation Effects 0.000 claims description 58
- 230000001678 irradiating effect Effects 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 53
- 229910010271 silicon carbide Inorganic materials 0.000 description 51
- 238000009279 wet oxidation reaction Methods 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001994 activation Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 238000003795 desorption Methods 0.000 description 1
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- 238000003379 elimination reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
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Abstract
【解決手段】半導体装置の製造方法は、SiC基板1上に水素および酸素を同時に導入する工程と、前記SiC基板1上において、1000℃以上の温度かつ減圧の条件下で前記水素および前記酸素を燃焼反応させ、該燃焼反応により前記SiC基板1表面にシリコン酸化膜であるゲート酸化膜4を形成する工程とを備える。
【選択図】図1
Description
<A−1.製造方法>
実施の形態1にかかる半導体装置としてのSiC−MOSFETの断面構造を図1に示す。図1に示すようなSiC−MOSFETは、SiC基板1a上にSiCエピタキシャル層(ドリフト層)1bが形成された基板上に形成される。以下では、SiC基板1aとSiCエピタキシャル層1bを含めて、SiC基板1と呼ぶ。SiC基板1表面のパターニング後、Alを注入することによってP型SiC拡散層2がそれぞれ離間して拡散され、さらにパターニング後、P型SiC拡散層2上に、N型SiC拡散層3が拡散される。
Si基板を用いた場合の、CVS−TDDB(Constant Voltage Stress−Time Dependent Dielectric Breakdown)評価の結果を図3に示す。CVS−TDDBとは、定電圧下において、絶縁破壊した半導体装置数の経時変化を評価したものである。図において、縦軸は故障率、横軸は時間の経過を示している。
本発明にかかる実施の形態1によれば、半導体装置の製造方法において、(a)SiC基板1上に、水素および酸素を導入する工程と、(b)SiC基板1上において水素および酸素を燃焼反応させ、燃焼反応によりSiC基板1表面にシリコン酸化膜であるゲート酸化膜4を形成する工程とを備えることで、信頼性の高いゲート酸化膜を備えた半導体装置を製造することが可能となる。
Claims (7)
- (a)SiC基板上に、水素および酸素を導入する工程と、
(b)前記SiC基板上において前記水素および酸素を燃焼反応させ、前記燃焼反応により前記SiC基板表面にシリコン酸化膜を形成する工程とを備える、
半導体装置の製造方法。 - 前記工程(a)(b)は、前記SiC基板上に光を照射することにより前記SiC基板上に周囲より温度の高い高温雰囲気を形成するランプ照射型枚葉酸化装置を用いて行われる、
請求項1に記載の半導体装置の製造方法。 - (c)前記SiC基板表面をドライ酸化し、シリコン酸化膜を別途形成する工程をさらに備える、
請求項1または2に記載の半導体装置の製造方法。 - 前記工程(c)は、前記工程(b)の後に行われる、
請求項3に記載の半導体装置の製造方法。 - (c)前記工程(b)の後、SiC基板表面をCVDにより酸化膜形成し、シリコン酸化膜を別途形成する工程をさらに備える、
請求項1または2に記載の半導体装置の製造方法。 - 前記工程(a)(b)(c)は、前記SiC基板を大気雰囲気にさらさずに工程移行可能な構造の装置を用いて行われる、
請求項3〜5のいずれかに記載の半導体装置の製造方法。 - 請求項3〜6のいずれかに記載の半導体装置の製造方法を用いて、前記SiC基板上に100nm以上のゲート酸化膜を形成する際に、
前記工程(b)により、20nm以下の前記シリコン酸化膜を前記ゲート酸化膜として形成し、
前記工程(c)により、残りの膜厚分の前記シリコン酸化膜を前記ゲート酸化膜として形成する、
半導体装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2010039627A JP5371831B2 (ja) | 2010-02-25 | 2010-02-25 | 半導体装置の製造方法 |
US12/882,746 US8236707B2 (en) | 2010-02-25 | 2010-09-15 | Method of manufacturing a semiconductor device |
CN2010105058797A CN102169827A (zh) | 2010-02-25 | 2010-10-11 | 半导体装置的制造方法 |
DE102010064214A DE102010064214A1 (de) | 2010-02-25 | 2010-12-27 | Verfahren zum Herstellen einer Halbleitervorrichtung |
KR1020110013957A KR101236497B1 (ko) | 2010-02-25 | 2011-02-17 | 반도체장치의 제조방법 |
US13/494,418 US20120252223A1 (en) | 2010-02-25 | 2012-06-12 | Method of manufacturing a semiconductor device |
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JP2010039627A JP5371831B2 (ja) | 2010-02-25 | 2010-02-25 | 半導体装置の製造方法 |
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JP5371831B2 JP5371831B2 (ja) | 2013-12-18 |
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JP (1) | JP5371831B2 (ja) |
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Cited By (2)
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WO2015015672A1 (ja) * | 2013-07-31 | 2015-02-05 | 三菱電機株式会社 | 炭化珪素半導体装置及びその製造方法 |
JP2018157140A (ja) * | 2017-03-21 | 2018-10-04 | パナソニックIpマネジメント株式会社 | 半導体装置およびその製造方法 |
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US9518734B2 (en) | 2013-01-28 | 2016-12-13 | General Electric Technology Gmbh | Fluid distribution and mixing grid for mixing gases |
CN105206513B (zh) * | 2015-09-28 | 2018-01-09 | 安徽工业大学 | 用氮和硼改善4H‑SiC MOSFET反型层迁移率的方法 |
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JPH1131691A (ja) * | 1997-05-14 | 1999-02-02 | Fuji Electric Co Ltd | 炭化けい素半導体装置の熱酸化膜形成方法 |
JP2001527279A (ja) * | 1997-07-11 | 2001-12-25 | アプライド マテリアルズ インコーポレイテッド | In−situ蒸気生成方法及び装置 |
JP2006269641A (ja) * | 2005-03-23 | 2006-10-05 | National Institute Of Advanced Industrial & Technology | 半導体装置及びその製造方法 |
JP2009064955A (ja) * | 2007-09-06 | 2009-03-26 | Mitsubishi Electric Corp | 炭化珪素半導体装置の製造方法 |
JP2009283693A (ja) * | 2008-05-22 | 2009-12-03 | Oki Semiconductor Co Ltd | 半導体装置の製造方法 |
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- 2010-10-11 CN CN2010105058797A patent/CN102169827A/zh active Pending
- 2010-12-27 DE DE102010064214A patent/DE102010064214A1/de not_active Withdrawn
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JP5800107B2 (ja) * | 2013-07-31 | 2015-10-28 | 三菱電機株式会社 | 炭化珪素半導体装置 |
US10002931B2 (en) | 2013-07-31 | 2018-06-19 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device |
JP2018157140A (ja) * | 2017-03-21 | 2018-10-04 | パナソニックIpマネジメント株式会社 | 半導体装置およびその製造方法 |
Also Published As
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US8236707B2 (en) | 2012-08-07 |
JP5371831B2 (ja) | 2013-12-18 |
US20110207336A1 (en) | 2011-08-25 |
US20120252223A1 (en) | 2012-10-04 |
KR101236497B1 (ko) | 2013-02-21 |
KR20110097643A (ko) | 2011-08-31 |
DE102010064214A1 (de) | 2011-08-25 |
CN102169827A (zh) | 2011-08-31 |
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