JP5720582B2 - スイッチング素子 - Google Patents
スイッチング素子 Download PDFInfo
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- JP5720582B2 JP5720582B2 JP2012003876A JP2012003876A JP5720582B2 JP 5720582 B2 JP5720582 B2 JP 5720582B2 JP 2012003876 A JP2012003876 A JP 2012003876A JP 2012003876 A JP2012003876 A JP 2012003876A JP 5720582 B2 JP5720582 B2 JP 5720582B2
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- 239000004065 semiconductor Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 51
- 210000000746 body region Anatomy 0.000 description 28
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本明細書または図面に説明した技術要素は、単独であるいは各種の組み合わせによって技術的有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
12:半導体基板
20:エミッタ領域
22:ボディ領域
24:ドリフト領域
26:コレクタ領域
30:シールド電極
32:ゲート電極
36:絶縁膜
38:トレンチ
60:エミッタ電極
64:コレクタ電極
80:エミッタ露出範囲
82:ボディ露出範囲
Claims (5)
- 半導体基板を有するスイッチング素子であり、
半導体基板には、
半導体基板の上面に露出している第1導電型の第1領域と、
半導体基板の上面に露出しているとともに、第1領域の下側まで広がっている第2導電型の第2領域と、
第2領域の下側に形成されており、第2領域によって第1領域から分離されている第1導電型の第3領域、
が形成されており、
半導体基板の上面には、第1領域及び第2領域と導通する上部電極が形成されており、
半導体基板の上面には、第1領域が露出する領域と第2領域が露出する領域に跨って伸びるトレンチが形成されており、
トレンチ内に、絶縁膜によって半導体基板から絶縁されているゲート電極が形成されており、
ゲート電極が、半導体基板の上面を平面視したときに第1領域が露出している範囲内を伸びるトレンチ内の少なくとも一部において第1領域が形成された深さ範囲内の位置から第3領域が形成された深さ範囲内の位置まで至る第1部分と、半導体基板の上面を平面視したときに第2領域が露出している範囲内を伸びるトレンチ内の少なくとも一部において第2領域が形成された深さ範囲内に形成された第2部分を有し、半導体基板の上面を平面視したときに第2領域が露出している範囲内を伸びるトレンチ内のゲート電極は、第3領域の深さ範囲にまでは達していない、
ことを特徴とするスイッチング素子。 - 第1部分の下側に、絶縁膜によってゲート電極及び半導体基板から絶縁されているシールド電極が形成されている請求項1のスイッチング素子。
- シールド電極が、第2部分の下側まで伸びている請求項2のスイッチング素子。
- 第2部分の下側のシールド電極が、第2領域が形成された深さ範囲内の位置から第3領域が形成された深さ範囲内の位置に至る請求項3のスイッチング素子。
- シールド電極が、上部電極と導通していることを特徴とする請求項2〜4の何れか一項のスイッチング素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012003876A JP5720582B2 (ja) | 2012-01-12 | 2012-01-12 | スイッチング素子 |
US13/739,436 US8946813B2 (en) | 2012-01-12 | 2013-01-11 | Switching element |
Applications Claiming Priority (1)
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---|---|---|---|
JP2012003876A JP5720582B2 (ja) | 2012-01-12 | 2012-01-12 | スイッチング素子 |
Publications (2)
Publication Number | Publication Date |
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JP2013143522A JP2013143522A (ja) | 2013-07-22 |
JP5720582B2 true JP5720582B2 (ja) | 2015-05-20 |
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JP2012003876A Active JP5720582B2 (ja) | 2012-01-12 | 2012-01-12 | スイッチング素子 |
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US (1) | US8946813B2 (ja) |
JP (1) | JP5720582B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9231091B2 (en) | 2014-05-12 | 2016-01-05 | Infineon Technologies Ag | Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones |
US9570577B2 (en) | 2014-05-12 | 2017-02-14 | Infineon Technologies Ag | Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas |
JP2016063048A (ja) * | 2014-09-17 | 2016-04-25 | 富士電機株式会社 | トレンチ型絶縁ゲートバイポーラトランジスタ及びその製造方法 |
JP6179554B2 (ja) * | 2015-05-26 | 2017-08-16 | トヨタ自動車株式会社 | 半導体装置 |
JP6866792B2 (ja) * | 2017-07-21 | 2021-04-28 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP7120916B2 (ja) * | 2018-12-27 | 2022-08-17 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6969586B2 (ja) * | 2019-04-23 | 2021-11-24 | 株式会社デンソー | 半導体装置およびその製造方法 |
WO2024054763A1 (en) * | 2022-09-09 | 2024-03-14 | Semiconductor Components Industries, Llc | Semiconductor device termination structures and methods of manufacturing semiconductor device termination structures |
Family Cites Families (4)
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US6621121B2 (en) * | 1998-10-26 | 2003-09-16 | Silicon Semiconductor Corporation | Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes |
JP3703816B2 (ja) * | 2003-06-18 | 2005-10-05 | 株式会社東芝 | 半導体装置 |
CN103199017B (zh) | 2003-12-30 | 2016-08-03 | 飞兆半导体公司 | 形成掩埋导电层方法、材料厚度控制法、形成晶体管方法 |
DE102005041358B4 (de) * | 2005-08-31 | 2012-01-19 | Infineon Technologies Austria Ag | Feldplatten-Trenchtransistor sowie Verfahren zu dessen Herstellung |
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2012
- 2012-01-12 JP JP2012003876A patent/JP5720582B2/ja active Active
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2013
- 2013-01-11 US US13/739,436 patent/US8946813B2/en active Active
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US20130181283A1 (en) | 2013-07-18 |
JP2013143522A (ja) | 2013-07-22 |
US8946813B2 (en) | 2015-02-03 |
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