JP6179554B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6179554B2 JP6179554B2 JP2015106494A JP2015106494A JP6179554B2 JP 6179554 B2 JP6179554 B2 JP 6179554B2 JP 2015106494 A JP2015106494 A JP 2015106494A JP 2015106494 A JP2015106494 A JP 2015106494A JP 6179554 B2 JP6179554 B2 JP 6179554B2
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- 239000004065 semiconductor Substances 0.000 title claims description 80
- 210000000746 body region Anatomy 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 37
- 238000002347 injection Methods 0.000 claims description 25
- 239000007924 injection Substances 0.000 claims description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 14
- 238000000034 method Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H01L29/70—Bipolar devices
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
Claims (6)
- 半導体基板の表面から裏面に向かって延びているとともに、前記表面を平面視したときに所定方向に延びているトレンチと、
前記トレンチの底面と側面を被覆しているゲート絶縁膜と、
前記トレンチの前記表面側の側面に接するとともに、前記所定方向に沿って観測したときに間欠的に出現する第1導電型のキャリア注入領域と、
前記トレンチの前記底面と前記裏面側の側面に接するとともに、前記所定方向に沿って連続して存在する第1導電型のドリフト領域と、
前記第1導電型のキャリア注入領域と前記第1導電型のドリフト領域の間にあって両者を分離しているとともに、前記所定方向に沿って観測したときに前記キャリア注入領域同士の間の間隙を充填している第2導電型のボディ領域と、
前記ゲート絶縁膜で底面と側面が被覆されている前記トレンチ内に存在しているゲート電極を備えており、
前記所定方向に沿って観測したときに、前記ゲート絶縁膜を介して前記キャリア注入領域に対向する位置における前記ゲート電極の表面側端面に比して、前記間隙において前記ゲート絶縁膜を介して前記ボディ領域に対向する位置における前記ゲート電極の少なくとも一部における表面側端面が、裏面側に変位していることを特徴とする
半導体装置。 - 前記ゲート電極が前記ゲート絶縁膜を介して前記キャリア注入領域に対向する位置における前記ゲート電極の表面側端面を第1端面とし、
前記表面側端面が裏面側に変位している位置における前記表面側端面を第2端面としたときに、
前記キャリア注入領域の裏面側端面に比して、前記第1端面が表面側にあり、前記第2端面が裏面側にあることを特徴とする請求項1の半導体装置。 - 前記表面側端面が裏面側に変位している位置における前記表面側端面を第2端面としたときに、
前記ボディ領域の裏面側端面に比して、前記第2端面が表面側にあることを特徴とする請求項1または2に記載の半導体装置。 - 前記半導体基板の表面に沿っているとともに相互に直交する方向をxy方向としたときに、
前記トレンチはx方向に延びる部分とy方向に延びる部分を備えており、
前記キャリア注入領域はy方向に延びている部分で前記ゲート絶縁膜に接しており、
前記y方向に延びている部分における前記ゲート電極の表面側端面に比して、前記x方向に延びている部分における前記ゲート電極の表面側端面が裏面側に変位していることを特徴とする請求項1〜3のいずれかの1項に記載の半導体装置。 - 前記y方向に延びている部分における前記トレンチの幅に比して、前記x方向に延びている部分における前記トレンチの幅は広いことを特徴する請求項4に記載の半導体装置。
- 前記トレンチの一部に、幅広部から幅狭部に至る徐変部が形成されており、
前記ゲート電極の前記表面側端面は、前記幅広部において裏面側にあり、前記幅狭部において表面側にあり、前記徐変部において前者から後者に徐変しており、
前記幅狭部において表面側に変位した前記ゲート電極の前記表面側端面に、前記トレンチの外部を延びているゲート配線が接続されている請求項1〜5の何れか1項に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015106494A JP6179554B2 (ja) | 2015-05-26 | 2015-05-26 | 半導体装置 |
DE102016109642.3A DE102016109642B4 (de) | 2015-05-26 | 2016-05-25 | Halbleitervorrichtung |
CN201610362078.7A CN106206699B (zh) | 2015-05-26 | 2016-05-26 | 半导体装置 |
US15/180,772 US10002951B2 (en) | 2015-05-26 | 2016-06-13 | Semiconductor device |
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JP2015106494A JP6179554B2 (ja) | 2015-05-26 | 2015-05-26 | 半導体装置 |
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JP2016219739A JP2016219739A (ja) | 2016-12-22 |
JP6179554B2 true JP6179554B2 (ja) | 2017-08-16 |
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JP2015106494A Expired - Fee Related JP6179554B2 (ja) | 2015-05-26 | 2015-05-26 | 半導体装置 |
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US (1) | US10002951B2 (ja) |
JP (1) | JP6179554B2 (ja) |
CN (1) | CN106206699B (ja) |
DE (1) | DE102016109642B4 (ja) |
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JP6299789B2 (ja) * | 2016-03-09 | 2018-03-28 | トヨタ自動車株式会社 | スイッチング素子 |
JP7052315B2 (ja) * | 2017-11-22 | 2022-04-12 | 株式会社デンソー | 半導体装置 |
JP7290973B2 (ja) * | 2019-03-27 | 2023-06-14 | ローム株式会社 | 半導体装置 |
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JP4178789B2 (ja) * | 2001-12-18 | 2008-11-12 | 富士電機デバイステクノロジー株式会社 | 半導体装置およびその製造方法 |
US6861701B2 (en) * | 2003-03-05 | 2005-03-01 | Advanced Analogic Technologies, Inc. | Trench power MOSFET with planarized gate bus |
JP2006120894A (ja) * | 2004-10-22 | 2006-05-11 | Toshiba Corp | 半導体装置 |
JP2008085278A (ja) * | 2006-09-29 | 2008-04-10 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
US8735906B2 (en) * | 2009-04-13 | 2014-05-27 | Rohm Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
JP5604892B2 (ja) | 2010-02-10 | 2014-10-15 | トヨタ自動車株式会社 | 絶縁ゲートバイポーラトランジスタ |
US8735974B2 (en) * | 2010-02-16 | 2014-05-27 | Toyota Jidosha Kabushiki Kaisha | Semiconductor devices |
JP5762689B2 (ja) | 2010-02-26 | 2015-08-12 | 株式会社東芝 | 半導体装置 |
JP5568036B2 (ja) * | 2011-03-09 | 2014-08-06 | トヨタ自動車株式会社 | Igbt |
JP5720582B2 (ja) * | 2012-01-12 | 2015-05-20 | トヨタ自動車株式会社 | スイッチング素子 |
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2015
- 2015-05-26 JP JP2015106494A patent/JP6179554B2/ja not_active Expired - Fee Related
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2016
- 2016-05-25 DE DE102016109642.3A patent/DE102016109642B4/de active Active
- 2016-05-26 CN CN201610362078.7A patent/CN106206699B/zh active Active
- 2016-06-13 US US15/180,772 patent/US10002951B2/en active Active
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US10002951B2 (en) | 2018-06-19 |
JP2016219739A (ja) | 2016-12-22 |
DE102016109642B4 (de) | 2019-01-24 |
CN106206699B (zh) | 2018-06-22 |
US20170162680A1 (en) | 2017-06-08 |
CN106206699A (zh) | 2016-12-07 |
DE102016109642A1 (de) | 2017-01-19 |
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