JP5688453B2 - フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング - Google Patents
フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング Download PDFInfo
- Publication number
- JP5688453B2 JP5688453B2 JP2013516658A JP2013516658A JP5688453B2 JP 5688453 B2 JP5688453 B2 JP 5688453B2 JP 2013516658 A JP2013516658 A JP 2013516658A JP 2013516658 A JP2013516658 A JP 2013516658A JP 5688453 B2 JP5688453 B2 JP 5688453B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- laser
- semiconductor wafer
- mask
- integrated circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001020 plasma etching Methods 0.000 title claims description 28
- 238000000034 method Methods 0.000 claims description 126
- 239000004065 semiconductor Substances 0.000 claims description 97
- 230000008569 process Effects 0.000 claims description 81
- 239000000758 substrate Substances 0.000 claims description 63
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 235000012239 silicon dioxide Nutrition 0.000 claims description 17
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 238000000059 patterning Methods 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 9
- 238000002679 ablation Methods 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 description 121
- 239000010410 layer Substances 0.000 description 86
- 238000005530 etching Methods 0.000 description 21
- 239000002184 metal Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 238000003860 storage Methods 0.000 description 13
- 239000003989 dielectric material Substances 0.000 description 11
- 230000006378 damage Effects 0.000 description 9
- 238000000608 laser ablation Methods 0.000 description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 230000032798 delamination Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910021488 crystalline silicon dioxide Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- -1 702) Inorganic materials 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 241000237503 Pectinidae Species 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229940114081 cinnamate Drugs 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 235000020637 scallop Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32889—Connection or combination with other apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32899—Multiple chambers, e.g. cluster tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Description
本発明の実施形態は半導体加工分野に関し、特に、複数の集積回路が搭載されている半導体ウェハのダイシング方法に関する。
半導体ウェハの加工においては、集積回路がシリコン又はその他の半導体材料からなるウェハ(基板とも呼ばれる)の上に形成される。一般に、半導体、導体又は絶縁体のいずれかである各種材料の層を利用して集積回路が形成される。これらの材料は、集積回路形成のための周知の各種工程により、ドープ、堆積及びエッチングされる。各ウェハは、集積回路を搭載した、ダイスと呼ばれる個々の領域が多数形成されるように加工される。
Claims (13)
- 複数の集積回路を含む半導体ウェハのダイシング方法であって、
前記半導体ウェハ上にマスクを形成するステップであって、前記マスクが前記集積回路を被覆し、保護する層を含むステップと、
前記マスクをフェムト秒ベースのレーザスクライビング工程でパターニングし、レーザスクライブされたマスクに各々が幅を有するスクライブラインを提供し、前記スクライブラインは前記半導体ウェハの前記集積回路間の領域を露出させるステップと、
各々が前記幅を有する溝を前記半導体ウェハ内へとプラズマエッチングし、前記集積回路を個片化するステップとを含む方法。 - 前記マスクを前記フェムト秒ベースのレーザスクライビング工程でパターニングするステップが、前記半導体ウェハの前記集積回路間の前記領域にレーザスクライブされた溝を形成するステップを含み、前記幅を有する溝を前記半導体ウェハ内へとプラズマエッチングするステップが、前記集積回路を個片化するためにレーザスクライブされた溝を延長するステップを含む請求項1記載の方法。
- 前記マスクを前記フェムト秒ベースのレーザスクライビング工程でパターニングするステップが、波長が約540ナノメートル以下で、レーザパルス幅が約400フェムト秒以下のレーザを使用するステップを含む請求項1記載の方法。
- 前記半導体ウェハをプラズマエッチングするステップが、高密度プラズマエッチング工程を使用するステップを含む請求項1記載の方法。
- 前記マスクを形成するステップが、フォトレジスト層及びI線パターニング層からなる群から選択される層を形成するステップを含む請求項1記載の方法。
- 前記複数の集積回路が、デバイス層/基板界面で測定した場合に、幅が約10ミクロン以下のストリートによって分離される請求項1記載の方法。
- 前記複数の集積回路が、制約なしのレイアウトを有する請求項1記載の方法。
- 複数の集積回路を含む半導体ウェハのダイシング方法であって、
シリコン基板の上にポリママスク層を形成するステップであって、前記ポリママスク層は前記シリコン基板上に配置された集積回路を被覆し保護し、前記集積回路は低誘電率材料層及び銅層の上方に配置された二酸化ケイ素層を含むステップと、
前記ポリママスク層、前記二酸化ケイ素層、前記低誘電率材料層、及び前記銅層をフェムト秒ベースのレーザスクライビング工程でパターニングするステップであって、レーザスクライブされたポリママスクに各々が幅を有するスクライブラインを提供し、前記スクライブラインは前記シリコン基板の前記集積回路間の領域を露出させるステップと、
各々が前記幅を有する溝を前記シリコン基板内へとプラズマエッチングし、前記集積回路を個片化するステップとを含む方法。 - 前記二酸化ケイ素層、前記低誘電率材料層、及び前記銅層を、前記フェムト秒ベースのレーザスクライビング工程でパターニングするステップが、前記二酸化ケイ素層のアブレーションを行ってから、前記低誘電率材料層と前記銅層のアブレーションを行うことを含む請求項8記載の方法。
- 前記フェムト秒ベースのレーザスクライビング工程でパターニングするステップが、前記半導体ウェハの前記集積回路間の前記領域にレーザスプライブされた溝を形成するステップを含み、前記幅を有する溝を前記半導体ウェハ内へとプラズマエッチングするステップが、前記集積回路を個片化するためにレーザスクライブされた溝を延長するステップを含む請求項8記載の方法。
- 前記フェムト秒レーザスクライビング工程でパターニングするステップが、波長が約530ナノメートル以下で、レーザパルス幅が約400フェムト秒以下のレーザを使用するステップを含む請求項8記載の方法。
- 前記シリコン基板をプラズマエッチングするステップは、高密度スルーシリコンプラズマエッチング工程を使用するステップを含む請求項8記載の方法。
- 前記集積回路は約10ミクロン以下の幅を有するストリートによって分離される請求項8記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35746810P | 2010-06-22 | 2010-06-22 | |
US61/357,468 | 2010-06-22 | ||
US13/160,713 US8642448B2 (en) | 2010-06-22 | 2011-06-15 | Wafer dicing using femtosecond-based laser and plasma etch |
US13/160,713 | 2011-06-15 | ||
PCT/US2011/041126 WO2011163149A2 (en) | 2010-06-22 | 2011-06-20 | Wafer dicing using femtosecond-based laser and plasma etch |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014221016A Division JP2015057840A (ja) | 2010-06-22 | 2014-10-30 | フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング |
JP2014257046A Division JP6543461B2 (ja) | 2010-06-22 | 2014-12-19 | フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013535114A JP2013535114A (ja) | 2013-09-09 |
JP2013535114A5 JP2013535114A5 (ja) | 2014-12-04 |
JP5688453B2 true JP5688453B2 (ja) | 2015-03-25 |
Family
ID=45329043
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013516658A Active JP5688453B2 (ja) | 2010-06-22 | 2011-06-20 | フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング |
JP2014221016A Pending JP2015057840A (ja) | 2010-06-22 | 2014-10-30 | フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング |
JP2014257046A Active JP6543461B2 (ja) | 2010-06-22 | 2014-12-19 | フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング |
JP2017092862A Active JP6642937B2 (ja) | 2010-06-22 | 2017-05-09 | フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014221016A Pending JP2015057840A (ja) | 2010-06-22 | 2014-10-30 | フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング |
JP2014257046A Active JP6543461B2 (ja) | 2010-06-22 | 2014-12-19 | フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング |
JP2017092862A Active JP6642937B2 (ja) | 2010-06-22 | 2017-05-09 | フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング |
Country Status (6)
Country | Link |
---|---|
US (9) | US8642448B2 (ja) |
JP (4) | JP5688453B2 (ja) |
KR (7) | KR101940091B1 (ja) |
CN (2) | CN105428281B (ja) |
TW (3) | TWI488229B (ja) |
WO (1) | WO2011163149A2 (ja) |
Families Citing this family (150)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8642448B2 (en) | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
US8802545B2 (en) | 2011-03-14 | 2014-08-12 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
US8557682B2 (en) | 2011-06-15 | 2013-10-15 | Applied Materials, Inc. | Multi-layer mask for substrate dicing by laser and plasma etch |
US9126285B2 (en) * | 2011-06-15 | 2015-09-08 | Applied Materials, Inc. | Laser and plasma etch wafer dicing using physically-removable mask |
US8759197B2 (en) | 2011-06-15 | 2014-06-24 | Applied Materials, Inc. | Multi-step and asymmetrically shaped laser beam scribing |
US8557683B2 (en) | 2011-06-15 | 2013-10-15 | Applied Materials, Inc. | Multi-step and asymmetrically shaped laser beam scribing |
US8703581B2 (en) | 2011-06-15 | 2014-04-22 | Applied Materials, Inc. | Water soluble mask for substrate dicing by laser and plasma etch |
US8598016B2 (en) | 2011-06-15 | 2013-12-03 | Applied Materials, Inc. | In-situ deposited mask layer for device singulation by laser scribing and plasma etch |
US9129904B2 (en) * | 2011-06-15 | 2015-09-08 | Applied Materials, Inc. | Wafer dicing using pulse train laser with multiple-pulse bursts and plasma etch |
US9029242B2 (en) | 2011-06-15 | 2015-05-12 | Applied Materials, Inc. | Damage isolation by shaped beam delivery in laser scribing process |
US8951819B2 (en) | 2011-07-11 | 2015-02-10 | Applied Materials, Inc. | Wafer dicing using hybrid split-beam laser scribing process with plasma etch |
US8785296B2 (en) * | 2012-02-14 | 2014-07-22 | Alpha & Omega Semiconductor, Inc. | Packaging method with backside wafer dicing |
US20130122687A1 (en) * | 2011-11-16 | 2013-05-16 | Applied Materials, Inc. | Laser scribing systems, apparatus, and methods |
US8652940B2 (en) * | 2012-04-10 | 2014-02-18 | Applied Materials, Inc. | Wafer dicing used hybrid multi-step laser scribing process with plasma etch |
US8946057B2 (en) * | 2012-04-24 | 2015-02-03 | Applied Materials, Inc. | Laser and plasma etch wafer dicing using UV-curable adhesive film |
US20130344684A1 (en) * | 2012-06-20 | 2013-12-26 | Stuart Bowden | Methods and systems for using subsurface laser engraving (ssle) to create one or more wafers from a material |
US8969177B2 (en) * | 2012-06-29 | 2015-03-03 | Applied Materials, Inc. | Laser and plasma etch wafer dicing with a double sided UV-curable adhesive film |
US9048309B2 (en) * | 2012-07-10 | 2015-06-02 | Applied Materials, Inc. | Uniform masking for wafer dicing using laser and plasma etch |
US8993414B2 (en) * | 2012-07-13 | 2015-03-31 | Applied Materials, Inc. | Laser scribing and plasma etch for high die break strength and clean sidewall |
US8940619B2 (en) | 2012-07-13 | 2015-01-27 | Applied Materials, Inc. | Method of diced wafer transportation |
US8845854B2 (en) * | 2012-07-13 | 2014-09-30 | Applied Materials, Inc. | Laser, plasma etch, and backside grind process for wafer dicing |
US8859397B2 (en) | 2012-07-13 | 2014-10-14 | Applied Materials, Inc. | Method of coating water soluble mask for laser scribing and plasma etch |
US20140057414A1 (en) * | 2012-08-27 | 2014-02-27 | Aparna Iyer | Mask residue removal for substrate dicing by laser and plasma etch |
US9159574B2 (en) | 2012-08-27 | 2015-10-13 | Applied Materials, Inc. | Method of silicon etch for trench sidewall smoothing |
US9252057B2 (en) * | 2012-10-17 | 2016-02-02 | Applied Materials, Inc. | Laser and plasma etch wafer dicing with partial pre-curing of UV release dicing tape for film frame wafer application |
KR101709029B1 (ko) * | 2012-11-15 | 2017-02-21 | 앰코 테크놀로지 인코포레이티드 | 다이 대 인터포저 웨이퍼 일차 본드를 구비한 반도체 디바이스 패키징을 위한 방법 |
US9040349B2 (en) | 2012-11-15 | 2015-05-26 | Amkor Technology, Inc. | Method and system for a semiconductor device package with a die to interposer wafer first bond |
US10714378B2 (en) | 2012-11-15 | 2020-07-14 | Amkor Technology, Inc. | Semiconductor device package and manufacturing method thereof |
US9136159B2 (en) | 2012-11-15 | 2015-09-15 | Amkor Technology, Inc. | Method and system for a semiconductor for device package with a die-to-packaging substrate first bond |
JP6166034B2 (ja) * | 2012-11-22 | 2017-07-19 | 株式会社ディスコ | ウエーハの加工方法 |
US20140162407A1 (en) * | 2012-12-10 | 2014-06-12 | Curtis Michael Zwenger | Method And System For Semiconductor Packaging |
US8975162B2 (en) | 2012-12-20 | 2015-03-10 | Applied Materials, Inc. | Wafer dicing from wafer backside |
US8980726B2 (en) | 2013-01-25 | 2015-03-17 | Applied Materials, Inc. | Substrate dicing by laser ablation and plasma etch damage removal for ultra-thin wafers |
US9236305B2 (en) | 2013-01-25 | 2016-01-12 | Applied Materials, Inc. | Wafer dicing with etch chamber shield ring for film frame wafer applications |
US9620379B2 (en) | 2013-03-14 | 2017-04-11 | Applied Materials, Inc. | Multi-layer mask including non-photodefinable laser energy absorbing layer for substrate dicing by laser and plasma etch |
KR101857336B1 (ko) * | 2013-04-04 | 2018-05-11 | 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 | 기판을 분리시키기 위한 방법 및 장치 |
US8883614B1 (en) | 2013-05-22 | 2014-11-11 | Applied Materials, Inc. | Wafer dicing with wide kerf by laser scribing and plasma etching hybrid approach |
US20150011073A1 (en) * | 2013-07-02 | 2015-01-08 | Wei-Sheng Lei | Laser scribing and plasma etch for high die break strength and smooth sidewall |
US20150037915A1 (en) * | 2013-07-31 | 2015-02-05 | Wei-Sheng Lei | Method and system for laser focus plane determination in a laser scribing process |
US9105710B2 (en) | 2013-08-30 | 2015-08-11 | Applied Materials, Inc. | Wafer dicing method for improving die packaging quality |
US9224650B2 (en) * | 2013-09-19 | 2015-12-29 | Applied Materials, Inc. | Wafer dicing from wafer backside and front side |
US20150079760A1 (en) * | 2013-09-19 | 2015-03-19 | Wei-Sheng Lei | Alternating masking and laser scribing approach for wafer dicing using laser scribing and plasma etch |
US9460966B2 (en) | 2013-10-10 | 2016-10-04 | Applied Materials, Inc. | Method and apparatus for dicing wafers having thick passivation polymer layer |
US9041198B2 (en) * | 2013-10-22 | 2015-05-26 | Applied Materials, Inc. | Maskless hybrid laser scribing and plasma etching wafer dicing process |
US20150147850A1 (en) * | 2013-11-25 | 2015-05-28 | Infineon Technologies Ag | Methods for processing a semiconductor workpiece |
US9312177B2 (en) | 2013-12-06 | 2016-04-12 | Applied Materials, Inc. | Screen print mask for laser scribe and plasma etch wafer dicing process |
US9299614B2 (en) | 2013-12-10 | 2016-03-29 | Applied Materials, Inc. | Method and carrier for dicing a wafer |
US9293304B2 (en) | 2013-12-17 | 2016-03-22 | Applied Materials, Inc. | Plasma thermal shield for heat dissipation in plasma chamber |
US9299611B2 (en) | 2014-01-29 | 2016-03-29 | Applied Materials, Inc. | Method of wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance |
US9012305B1 (en) | 2014-01-29 | 2015-04-21 | Applied Materials, Inc. | Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate non-reactive post mask-opening clean |
US9018079B1 (en) | 2014-01-29 | 2015-04-28 | Applied Materials, Inc. | Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate reactive post mask-opening clean |
US8927393B1 (en) | 2014-01-29 | 2015-01-06 | Applied Materials, Inc. | Water soluble mask formation by dry film vacuum lamination for laser and plasma dicing |
US9236284B2 (en) * | 2014-01-31 | 2016-01-12 | Applied Materials, Inc. | Cooled tape frame lift and low contact shadow ring for plasma heat isolation |
US9610543B2 (en) | 2014-01-31 | 2017-04-04 | Infineon Technologies Ag | Method for simultaneous structuring and chip singulation |
US8991329B1 (en) | 2014-01-31 | 2015-03-31 | Applied Materials, Inc. | Wafer coating |
JP6325279B2 (ja) * | 2014-02-21 | 2018-05-16 | 株式会社ディスコ | ウエーハの加工方法 |
US20150243559A1 (en) * | 2014-02-27 | 2015-08-27 | Jungrae Park | Hybrid wafer dicing approach using temporally-controlled laser scribing process and plasma etch |
US20150255349A1 (en) | 2014-03-07 | 2015-09-10 | JAMES Matthew HOLDEN | Approaches for cleaning a wafer during hybrid laser scribing and plasma etching wafer dicing processes |
US9130030B1 (en) | 2014-03-07 | 2015-09-08 | Applied Materials, Inc. | Baking tool for improved wafer coating process |
US9275902B2 (en) | 2014-03-26 | 2016-03-01 | Applied Materials, Inc. | Dicing processes for thin wafers with bumps on wafer backside |
US20150287638A1 (en) * | 2014-04-04 | 2015-10-08 | Jungrae Park | Hybrid wafer dicing approach using collimated laser scribing process and plasma etch |
US9076860B1 (en) * | 2014-04-04 | 2015-07-07 | Applied Materials, Inc. | Residue removal from singulated die sidewall |
US8975163B1 (en) * | 2014-04-10 | 2015-03-10 | Applied Materials, Inc. | Laser-dominated laser scribing and plasma etch hybrid wafer dicing |
US8932939B1 (en) | 2014-04-14 | 2015-01-13 | Applied Materials, Inc. | Water soluble mask formation by dry film lamination |
US8912078B1 (en) | 2014-04-16 | 2014-12-16 | Applied Materials, Inc. | Dicing wafers having solder bumps on wafer backside |
US8999816B1 (en) * | 2014-04-18 | 2015-04-07 | Applied Materials, Inc. | Pre-patterned dry laminate mask for wafer dicing processes |
US8912075B1 (en) | 2014-04-29 | 2014-12-16 | Applied Materials, Inc. | Wafer edge warp supression for thin wafer supported by tape frame |
US9159621B1 (en) | 2014-04-29 | 2015-10-13 | Applied Materials, Inc. | Dicing tape protection for wafer dicing using laser scribe process |
US8980727B1 (en) | 2014-05-07 | 2015-03-17 | Applied Materials, Inc. | Substrate patterning using hybrid laser scribing and plasma etching processing schemes |
US9112050B1 (en) | 2014-05-13 | 2015-08-18 | Applied Materials, Inc. | Dicing tape thermal management by wafer frame support ring cooling during plasma dicing |
WO2015175268A1 (en) * | 2014-05-16 | 2015-11-19 | Applied Materials, Inc. | Hybrid wafer dicing approach using an ultra-short pulsed laguerre gauss beam laser scribing process and plasma etch process |
US9034771B1 (en) | 2014-05-23 | 2015-05-19 | Applied Materials, Inc. | Cooling pedestal for dicing tape thermal management during plasma dicing |
US9130057B1 (en) | 2014-06-30 | 2015-09-08 | Applied Materials, Inc. | Hybrid dicing process using a blade and laser |
US9142459B1 (en) | 2014-06-30 | 2015-09-22 | Applied Materials, Inc. | Wafer dicing using hybrid laser scribing and plasma etch approach with mask application by vacuum lamination |
US9165832B1 (en) * | 2014-06-30 | 2015-10-20 | Applied Materials, Inc. | Method of die singulation using laser ablation and induction of internal defects with a laser |
US9093518B1 (en) * | 2014-06-30 | 2015-07-28 | Applied Materials, Inc. | Singulation of wafers having wafer-level underfill |
US9349648B2 (en) * | 2014-07-22 | 2016-05-24 | Applied Materials, Inc. | Hybrid wafer dicing approach using a rectangular shaped two-dimensional top hat laser beam profile or a linear shaped one-dimensional top hat laser beam profile laser scribing process and plasma etch process |
JP6282194B2 (ja) * | 2014-07-30 | 2018-02-21 | 株式会社ディスコ | ウェーハの加工方法 |
US9117868B1 (en) | 2014-08-12 | 2015-08-25 | Applied Materials, Inc. | Bipolar electrostatic chuck for dicing tape thermal management during plasma dicing |
US9196498B1 (en) | 2014-08-12 | 2015-11-24 | Applied Materials, Inc. | Stationary actively-cooled shadow ring for heat dissipation in plasma chamber |
US9281244B1 (en) | 2014-09-18 | 2016-03-08 | Applied Materials, Inc. | Hybrid wafer dicing approach using an adaptive optics-controlled laser scribing process and plasma etch process |
US9177861B1 (en) * | 2014-09-19 | 2015-11-03 | Applied Materials, Inc. | Hybrid wafer dicing approach using laser scribing process based on an elliptical laser beam profile or a spatio-temporal controlled laser beam profile |
US11195756B2 (en) | 2014-09-19 | 2021-12-07 | Applied Materials, Inc. | Proximity contact cover ring for plasma dicing |
US9196536B1 (en) | 2014-09-25 | 2015-11-24 | Applied Materials, Inc. | Hybrid wafer dicing approach using a phase modulated laser beam profile laser scribing process and plasma etch process |
US9130056B1 (en) | 2014-10-03 | 2015-09-08 | Applied Materials, Inc. | Bi-layer wafer-level underfill mask for wafer dicing and approaches for performing wafer dicing |
US9245803B1 (en) | 2014-10-17 | 2016-01-26 | Applied Materials, Inc. | Hybrid wafer dicing approach using a bessel beam shaper laser scribing process and plasma etch process |
US10692765B2 (en) * | 2014-11-07 | 2020-06-23 | Applied Materials, Inc. | Transfer arm for film frame substrate handling during plasma singulation of wafers |
US9554469B2 (en) * | 2014-12-05 | 2017-01-24 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Method of fabricating a polymer frame with a rectangular array of cavities |
CN104439720B (zh) * | 2014-12-25 | 2016-02-24 | 京东方科技集团股份有限公司 | 激光切割方法、显示基板、显示装置 |
US20160184926A1 (en) * | 2014-12-30 | 2016-06-30 | Suss Microtec Photonic Systems Inc. | Laser ablation system including variable energy beam to minimize etch-stop material damage |
US9355907B1 (en) | 2015-01-05 | 2016-05-31 | Applied Materials, Inc. | Hybrid wafer dicing approach using a line shaped laser beam profile laser scribing process and plasma etch process |
US9330977B1 (en) | 2015-01-05 | 2016-05-03 | Applied Materials, Inc. | Hybrid wafer dicing approach using a galvo scanner and linear stage hybrid motion laser scribing process and plasma etch process |
US9159624B1 (en) | 2015-01-05 | 2015-10-13 | Applied Materials, Inc. | Vacuum lamination of polymeric dry films for wafer dicing using hybrid laser scribing and plasma etch approach |
JP6738591B2 (ja) * | 2015-03-13 | 2020-08-12 | 古河電気工業株式会社 | 半導体ウェハの処理方法、半導体チップおよび表面保護テープ |
KR20160126175A (ko) * | 2015-04-22 | 2016-11-02 | 삼성디스플레이 주식회사 | 기판 절단 방법 및 표시 장치 제조 방법 |
US9601375B2 (en) | 2015-04-27 | 2017-03-21 | Applied Materials, Inc. | UV-cure pre-treatment of carrier film for wafer dicing using hybrid laser scribing and plasma etch approach |
US9721839B2 (en) | 2015-06-12 | 2017-08-01 | Applied Materials, Inc. | Etch-resistant water soluble mask for hybrid wafer dicing using laser scribing and plasma etch |
US9478455B1 (en) | 2015-06-12 | 2016-10-25 | Applied Materials, Inc. | Thermal pyrolytic graphite shadow ring assembly for heat dissipation in plasma chamber |
WO2017082210A1 (ja) * | 2015-11-09 | 2017-05-18 | 古河電気工業株式会社 | 半導体チップの製造方法及びこれに用いるマスク一体型表面保護テープ |
WO2017136672A1 (en) * | 2016-02-05 | 2017-08-10 | Applied Materials, Inc. | Porous silicon structures and laser machining methods for semiconductor wafer processing |
DE102016103324A1 (de) | 2016-02-25 | 2017-08-31 | Osram Opto Semiconductors Gmbh | Videowand-Modul und Verfahren zum Herstellen eines Videowand-Moduls |
US9972575B2 (en) | 2016-03-03 | 2018-05-15 | Applied Materials, Inc. | Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process |
JP2017163069A (ja) * | 2016-03-11 | 2017-09-14 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
JP6524535B2 (ja) | 2016-03-11 | 2019-06-05 | パナソニックIpマネジメント株式会社 | 素子チップおよびその製造方法 |
JP6604476B2 (ja) | 2016-03-11 | 2019-11-13 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
US9852997B2 (en) | 2016-03-25 | 2017-12-26 | Applied Materials, Inc. | Hybrid wafer dicing approach using a rotating beam laser scribing process and plasma etch process |
CN105785678B (zh) * | 2016-05-12 | 2019-04-30 | 深圳市华星光电技术有限公司 | Tft基板的断线修复方法 |
US9793132B1 (en) | 2016-05-13 | 2017-10-17 | Applied Materials, Inc. | Etch mask for hybrid laser scribing and plasma etch wafer singulation process |
DE102016109693B4 (de) * | 2016-05-25 | 2022-10-27 | Infineon Technologies Ag | Verfahren zum Trennen von Halbleiterdies von einem Halbleitersubstrat und Halbleitersubstratanordnung |
KR102633112B1 (ko) | 2016-08-05 | 2024-02-06 | 삼성전자주식회사 | 반도체 소자 |
JP2018056178A (ja) * | 2016-09-26 | 2018-04-05 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
CN109863517B (zh) | 2016-10-05 | 2023-08-01 | 莫克斯网络有限责任公司 | 基于rfid的机架清单管理*** |
JP6512454B2 (ja) * | 2016-12-06 | 2019-05-15 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
JP6724775B2 (ja) | 2016-12-28 | 2020-07-15 | 凸版印刷株式会社 | 配線基板の個片化方法及びパッケージ用基板 |
EP3967442A1 (de) * | 2017-03-06 | 2022-03-16 | LPKF Laser & Electronics AG | Verfahren zur herstellung einer technischen maske |
US11158540B2 (en) | 2017-05-26 | 2021-10-26 | Applied Materials, Inc. | Light-absorbing mask for hybrid laser scribing and plasma etch wafer singulation process |
US10363629B2 (en) | 2017-06-01 | 2019-07-30 | Applied Materials, Inc. | Mitigation of particle contamination for wafer dicing processes |
CN109003898A (zh) * | 2017-06-07 | 2018-12-14 | 郑州光力瑞弘电子科技有限公司 | 一种在薄片(包括晶圆)上实现图形转移的新工艺 |
KR102307233B1 (ko) * | 2017-08-01 | 2021-09-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 산화물 후처리를 위한 방법들 |
JP6998545B2 (ja) * | 2017-12-25 | 2022-01-18 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
JP7066263B2 (ja) * | 2018-01-23 | 2022-05-13 | 株式会社ディスコ | 加工方法、エッチング装置、及びレーザ加工装置 |
JP2019140225A (ja) | 2018-02-09 | 2019-08-22 | 株式会社東芝 | エッチング方法、半導体チップの製造方法及び物品の製造方法 |
US10535561B2 (en) * | 2018-03-12 | 2020-01-14 | Applied Materials, Inc. | Hybrid wafer dicing approach using a multiple pass laser scribing process and plasma etch process |
JP7170261B2 (ja) * | 2018-08-24 | 2022-11-14 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
US11355394B2 (en) | 2018-09-13 | 2022-06-07 | Applied Materials, Inc. | Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate breakthrough treatment |
CN109352184B (zh) * | 2018-10-23 | 2021-02-09 | 深圳赛意法微电子有限公司 | 硅基晶圆的分束激光切割方法 |
US11437250B2 (en) | 2018-11-15 | 2022-09-06 | Tokyo Electron Limited | Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions |
CN109894725B (zh) * | 2018-11-30 | 2021-11-02 | 全讯射频科技(无锡)有限公司 | 一种等离子切割实现超窄切割道的工艺 |
US11664276B2 (en) * | 2018-11-30 | 2023-05-30 | Texas Instruments Incorporated | Front side laser-based wafer dicing |
JP7193350B2 (ja) * | 2019-01-07 | 2022-12-20 | 株式会社ディスコ | ウェーハの加工方法 |
CN109746796A (zh) * | 2019-01-10 | 2019-05-14 | 湘潭大学 | 一种用于SiC晶圆的划片装置及方法 |
JP2020194918A (ja) | 2019-05-29 | 2020-12-03 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
US11011424B2 (en) | 2019-08-06 | 2021-05-18 | Applied Materials, Inc. | Hybrid wafer dicing approach using a spatially multi-focused laser beam laser scribing process and plasma etch process |
US11342226B2 (en) | 2019-08-13 | 2022-05-24 | Applied Materials, Inc. | Hybrid wafer dicing approach using an actively-focused laser beam laser scribing process and plasma etch process |
US10903121B1 (en) | 2019-08-14 | 2021-01-26 | Applied Materials, Inc. | Hybrid wafer dicing approach using a uniform rotating beam laser scribing process and plasma etch process |
US20210107094A1 (en) * | 2019-10-14 | 2021-04-15 | Haesung Ds Co., Ltd. | Apparatus for and method of polishing surface of substrate |
KR20210049250A (ko) * | 2019-10-24 | 2021-05-06 | 삼성디스플레이 주식회사 | 기판 가공 장치 및 기판 가공 방법 |
US11600492B2 (en) | 2019-12-10 | 2023-03-07 | Applied Materials, Inc. | Electrostatic chuck with reduced current leakage for hybrid laser scribing and plasma etch wafer singulation process |
US11211247B2 (en) | 2020-01-30 | 2021-12-28 | Applied Materials, Inc. | Water soluble organic-inorganic hybrid mask formulations and their applications |
JP7443097B2 (ja) * | 2020-03-09 | 2024-03-05 | キオクシア株式会社 | 半導体ウェハおよび半導体チップ |
WO2021217056A1 (en) * | 2020-04-23 | 2021-10-28 | Akash Systems, Inc. | High-efficiency structures for improved wireless communications |
US11879850B2 (en) | 2020-07-22 | 2024-01-23 | Elemental Scientific, Inc. | Abrasive sampling system and method for representative, homogeneous, and planarized preparation of solid samples for laser ablation |
CN112234017B (zh) * | 2020-10-19 | 2023-07-14 | 绍兴同芯成集成电路有限公司 | 一种玻璃载板与晶圆双面加工工艺 |
DE102020213776A1 (de) | 2020-11-03 | 2022-05-05 | Q.ant GmbH | Verfahren zum Spalten eines Kristalls |
US11915941B2 (en) | 2021-02-11 | 2024-02-27 | Tokyo Electron Limited | Dynamically adjusted purge timing in wet atomic layer etching |
US11784050B2 (en) | 2021-04-27 | 2023-10-10 | Micron Technology, Inc. | Method of fabricating microelectronic devices and related microelectronic devices, tools, and apparatus |
CN113809066B (zh) * | 2021-09-16 | 2023-10-24 | 长江存储科技有限责任公司 | 晶圆、晶圆结构以及晶圆的制造方法 |
US11802342B2 (en) | 2021-10-19 | 2023-10-31 | Tokyo Electron Limited | Methods for wet atomic layer etching of ruthenium |
US11866831B2 (en) | 2021-11-09 | 2024-01-09 | Tokyo Electron Limited | Methods for wet atomic layer etching of copper |
CN116613060A (zh) * | 2023-07-04 | 2023-08-18 | 江苏长晶科技股份有限公司 | 一种晶圆切割方法及半导体器件 |
Family Cites Families (121)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4049944A (en) | 1973-02-28 | 1977-09-20 | Hughes Aircraft Company | Process for fabricating small geometry semiconductive devices including integrated components |
US4339528A (en) | 1981-05-19 | 1982-07-13 | Rca Corporation | Etching method using a hardened PVA stencil |
US4684437A (en) | 1985-10-31 | 1987-08-04 | International Business Machines Corporation | Selective metal etching in metal/polymer structures |
JPH0416085A (ja) | 1990-05-10 | 1992-01-21 | Tokyo Gas Co Ltd | 画像記録再生装置 |
KR100215338B1 (ko) * | 1991-03-06 | 1999-08-16 | 가나이 쓰도무 | 반도체 장치의 제조방법 |
DE4128823C2 (de) | 1991-08-30 | 2000-06-29 | Bosch Gmbh Robert | Verfahren und Vorrichtung zum Bestimmen des Speichervermögens eines Katalysators |
SE500852C2 (sv) | 1992-01-29 | 1994-09-19 | Mataki Ab | Sätt och anordning för läckagetest av med tätskikt klädda yttertak eller bjälklag |
EP0609809B8 (en) | 1993-02-01 | 2001-11-21 | Canon Kabushiki Kaisha | Liquid crystal display device |
US5593606A (en) | 1994-07-18 | 1997-01-14 | Electro Scientific Industries, Inc. | Ultraviolet laser system and method for forming vias in multi-layered targets |
JPH09216085A (ja) | 1996-02-07 | 1997-08-19 | Canon Inc | 基板の切断方法及び切断装置 |
EP0822582B1 (en) | 1996-08-01 | 2003-10-01 | Surface Technology Systems Plc | Method of etching substrates |
US6426484B1 (en) | 1996-09-10 | 2002-07-30 | Micron Technology, Inc. | Circuit and method for heating an adhesive to package or rework a semiconductor die |
JPH10144757A (ja) * | 1996-11-08 | 1998-05-29 | Dainippon Screen Mfg Co Ltd | 基板処理システム |
US5920973A (en) | 1997-03-09 | 1999-07-13 | Electro Scientific Industries, Inc. | Hole forming system with multiple spindles per station |
JP3230572B2 (ja) | 1997-05-19 | 2001-11-19 | 日亜化学工業株式会社 | 窒化物系化合物半導体素子の製造方法及び半導体発光素子 |
US6312525B1 (en) * | 1997-07-11 | 2001-11-06 | Applied Materials, Inc. | Modular architecture for semiconductor wafer fabrication equipment |
US6057180A (en) | 1998-06-05 | 2000-05-02 | Electro Scientific Industries, Inc. | Method of severing electrically conductive links with ultraviolet laser output |
JP2001044144A (ja) | 1999-08-03 | 2001-02-16 | Tokyo Seimitsu Co Ltd | 半導体チップの製造プロセス |
JP3348700B2 (ja) * | 1999-08-19 | 2002-11-20 | 株式会社東京精密 | エッチング装置 |
JP2001110811A (ja) | 1999-10-08 | 2001-04-20 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JP4387007B2 (ja) | 1999-10-26 | 2009-12-16 | 株式会社ディスコ | 半導体ウェーハの分割方法 |
JP2001144126A (ja) | 1999-11-12 | 2001-05-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法および半導体装置 |
JP2001148358A (ja) * | 1999-11-19 | 2001-05-29 | Disco Abrasive Syst Ltd | 半導体ウェーハ及び該半導体ウェーハの分割方法 |
US6300593B1 (en) | 1999-12-07 | 2001-10-09 | First Solar, Llc | Apparatus and method for laser scribing a coated substrate |
US6887804B2 (en) | 2000-01-10 | 2005-05-03 | Electro Scientific Industries, Inc. | Passivation processing over a memory link |
US6574250B2 (en) | 2000-01-10 | 2003-06-03 | Electro Scientific Industries, Inc. | Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulse widths |
US6407363B2 (en) | 2000-03-30 | 2002-06-18 | Electro Scientific Industries, Inc. | Laser system and method for single press micromachining of multilayer workpieces |
CN1219319C (zh) | 2000-07-12 | 2005-09-14 | 电子科学工业公司 | 用于集成电路熔丝的单脉冲切断的紫外激光***和方法 |
US6676878B2 (en) | 2001-01-31 | 2004-01-13 | Electro Scientific Industries, Inc. | Laser segmented cutting |
US6759275B1 (en) | 2001-09-04 | 2004-07-06 | Megic Corporation | Method for making high-performance RF integrated circuits |
ATE537558T1 (de) | 2001-10-01 | 2011-12-15 | Electro Scient Ind Inc | Bearbeiten von substraten, insbesondere von halbleitersubstraten |
US6642127B2 (en) | 2001-10-19 | 2003-11-04 | Applied Materials, Inc. | Method for dicing a semiconductor wafer |
JP3910843B2 (ja) | 2001-12-13 | 2007-04-25 | 東京エレクトロン株式会社 | 半導体素子分離方法及び半導体素子分離装置 |
US6706998B2 (en) | 2002-01-11 | 2004-03-16 | Electro Scientific Industries, Inc. | Simulated laser spot enlargement |
KR100451950B1 (ko) | 2002-02-25 | 2004-10-08 | 삼성전자주식회사 | 이미지 센서 소자 웨이퍼 소잉 방법 |
AU2003246348A1 (en) | 2002-02-25 | 2003-09-09 | Disco Corporation | Method for dividing semiconductor wafer |
JP2003257896A (ja) | 2002-02-28 | 2003-09-12 | Disco Abrasive Syst Ltd | 半導体ウェーハの分割方法 |
EP1497851B1 (en) | 2002-04-19 | 2006-01-25 | Xsil Technology Limited | Program-controlled dicing of a substrate using a pulsed laser |
MY135361A (en) * | 2002-04-26 | 2008-03-31 | Electro Scient Ind Inc | Machining substrates, particularly semiconductor wafers |
JP2004031526A (ja) | 2002-06-24 | 2004-01-29 | Toyoda Gosei Co Ltd | 3族窒化物系化合物半導体素子の製造方法 |
JP3908610B2 (ja) | 2002-06-25 | 2007-04-25 | 大日本印刷株式会社 | 多層配線基板の製造方法 |
US6582983B1 (en) | 2002-07-12 | 2003-06-24 | Keteca Singapore Singapore | Method and wafer for maintaining ultra clean bonding pads on a wafer |
JP4286497B2 (ja) | 2002-07-17 | 2009-07-01 | 新光電気工業株式会社 | 半導体装置の製造方法 |
JP3908148B2 (ja) | 2002-10-28 | 2007-04-25 | シャープ株式会社 | 積層型半導体装置 |
US20050023260A1 (en) | 2003-01-10 | 2005-02-03 | Shinya Takyu | Semiconductor wafer dividing apparatus and semiconductor device manufacturing method |
US20040157457A1 (en) | 2003-02-12 | 2004-08-12 | Songlin Xu | Methods of using polymer films to form micro-structures |
JP2004273895A (ja) | 2003-03-11 | 2004-09-30 | Disco Abrasive Syst Ltd | 半導体ウエーハの分割方法 |
US7087452B2 (en) | 2003-04-22 | 2006-08-08 | Intel Corporation | Edge arrangements for integrated circuit chips |
JP2004322168A (ja) | 2003-04-25 | 2004-11-18 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP4231349B2 (ja) | 2003-07-02 | 2009-02-25 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
JP3842769B2 (ja) * | 2003-09-01 | 2006-11-08 | 株式会社東芝 | レーザ加工装置、レーザ加工方法、及び半導体装置の製造方法 |
JP4408361B2 (ja) | 2003-09-26 | 2010-02-03 | 株式会社ディスコ | ウエーハの分割方法 |
US7128806B2 (en) | 2003-10-21 | 2006-10-31 | Applied Materials, Inc. | Mask etch processing apparatus |
JP4302491B2 (ja) * | 2003-11-14 | 2009-07-29 | 株式会社アルバック | 枚葉式真空処理装置 |
JP4471632B2 (ja) | 2003-11-18 | 2010-06-02 | 株式会社ディスコ | ウエーハの加工方法 |
JP2005203541A (ja) | 2004-01-15 | 2005-07-28 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法 |
US7358192B2 (en) | 2004-04-08 | 2008-04-15 | Applied Materials, Inc. | Method and apparatus for in-situ film stack processing |
US7459377B2 (en) | 2004-06-08 | 2008-12-02 | Panasonic Corporation | Method for dividing substrate |
US7804043B2 (en) * | 2004-06-15 | 2010-09-28 | Laserfacturing Inc. | Method and apparatus for dicing of thin and ultra thin semiconductor wafer using ultrafast pulse laser |
US7687740B2 (en) | 2004-06-18 | 2010-03-30 | Electro Scientific Industries, Inc. | Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows |
US7507638B2 (en) | 2004-06-30 | 2009-03-24 | Freescale Semiconductor, Inc. | Ultra-thin die and method of fabricating same |
JP4018088B2 (ja) | 2004-08-02 | 2007-12-05 | 松下電器産業株式会社 | 半導体ウェハの分割方法及び半導体素子の製造方法 |
US7199050B2 (en) | 2004-08-24 | 2007-04-03 | Micron Technology, Inc. | Pass through via technology for use during the manufacture of a semiconductor device |
JP4018096B2 (ja) | 2004-10-05 | 2007-12-05 | 松下電器産業株式会社 | 半導体ウェハの分割方法、及び半導体素子の製造方法 |
US20060088984A1 (en) | 2004-10-21 | 2006-04-27 | Intel Corporation | Laser ablation method |
US20060086898A1 (en) | 2004-10-26 | 2006-04-27 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus of making highly repetitive micro-pattern using laser writer |
US7422962B2 (en) * | 2004-10-27 | 2008-09-09 | Hewlett-Packard Development Company, L.P. | Method of singulating electronic devices |
KR101074389B1 (ko) * | 2004-11-05 | 2011-10-17 | 엘지디스플레이 주식회사 | 박막 식각 방법 및 이를 이용한 액정표시장치의 제조방법 |
US20060156979A1 (en) | 2004-11-22 | 2006-07-20 | Applied Materials, Inc. | Substrate processing apparatus using a batch processing chamber |
US20060146910A1 (en) | 2004-11-23 | 2006-07-06 | Manoochehr Koochesfahani | Method and apparatus for simultaneous velocity and temperature measurements in fluid flow |
JP4288229B2 (ja) | 2004-12-24 | 2009-07-01 | パナソニック株式会社 | 半導体チップの製造方法 |
US7875898B2 (en) | 2005-01-24 | 2011-01-25 | Panasonic Corporation | Semiconductor device |
JP2006253402A (ja) * | 2005-03-10 | 2006-09-21 | Nec Electronics Corp | 半導体装置の製造方法 |
US7361990B2 (en) | 2005-03-17 | 2008-04-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reducing cracking of high-lead or lead-free bumps by matching sizes of contact pads and bump pads |
JP4478053B2 (ja) | 2005-03-29 | 2010-06-09 | 株式会社ディスコ | 半導体ウエーハ処理方法 |
JP2006310349A (ja) * | 2005-04-26 | 2006-11-09 | Renesas Technology Corp | 半導体装置の製造システム及び製造方法 |
JP4285455B2 (ja) | 2005-07-11 | 2009-06-24 | パナソニック株式会社 | 半導体チップの製造方法 |
JP4599243B2 (ja) | 2005-07-12 | 2010-12-15 | 株式会社ディスコ | レーザー加工装置 |
US9138913B2 (en) | 2005-09-08 | 2015-09-22 | Imra America, Inc. | Transparent material processing with an ultrashort pulse laser |
US20070079866A1 (en) | 2005-10-07 | 2007-04-12 | Applied Materials, Inc. | System and method for making an improved thin film solar cell interconnect |
TWI381485B (zh) * | 2005-11-10 | 2013-01-01 | Renesas Electronics Corp | Semiconductor device manufacturing method and semiconductor device |
JP4769560B2 (ja) | 2005-12-06 | 2011-09-07 | 株式会社ディスコ | ウエーハの分割方法 |
TWI331699B (en) | 2006-03-17 | 2010-10-11 | Univ Yuan Ze | Photolithographic mask and apparatus and wafer photolithography method for the same |
TWI284521B (en) | 2006-03-23 | 2007-08-01 | Actherm Inc | Structure of electronic thermometer |
JP2007276278A (ja) * | 2006-04-07 | 2007-10-25 | Seiko Epson Corp | 基板及びその分断方法、ならびに表示装置、電子機器 |
JP4372115B2 (ja) | 2006-05-12 | 2009-11-25 | パナソニック株式会社 | 半導体装置の製造方法、および半導体モジュールの製造方法 |
US8198566B2 (en) | 2006-05-24 | 2012-06-12 | Electro Scientific Industries, Inc. | Laser processing of workpieces containing low-k dielectric material |
JP4480728B2 (ja) | 2006-06-09 | 2010-06-16 | パナソニック株式会社 | Memsマイクの製造方法 |
JP4544231B2 (ja) | 2006-10-06 | 2010-09-15 | パナソニック株式会社 | 半導体チップの製造方法 |
US7892891B2 (en) * | 2006-10-11 | 2011-02-22 | SemiLEDs Optoelectronics Co., Ltd. | Die separation |
JP5064985B2 (ja) * | 2006-12-05 | 2012-10-31 | 古河電気工業株式会社 | 半導体ウェハの処理方法 |
ES2302638B1 (es) | 2006-12-21 | 2009-06-04 | Vicente Diaz Fuente | Metodo mejorado de codificacion y decodificacion con al menos dos pares de secuencias ortogonales. |
JP4840174B2 (ja) * | 2007-02-08 | 2011-12-21 | パナソニック株式会社 | 半導体チップの製造方法 |
JP4840200B2 (ja) | 2007-03-09 | 2011-12-21 | パナソニック株式会社 | 半導体チップの製造方法 |
JP5137435B2 (ja) | 2007-03-28 | 2013-02-06 | 古河電気工業株式会社 | 半導体ウェハのチップ化処理方法 |
WO2008126742A1 (ja) * | 2007-04-05 | 2008-10-23 | Cyber Laser Inc. | レーザ加工方法及び切断方法並びに多層基板を有する構造体の分割方法 |
US7926410B2 (en) | 2007-05-01 | 2011-04-19 | J.R. Automation Technologies, L.L.C. | Hydraulic circuit for synchronized horizontal extension of cylinders |
TWI379748B (en) * | 2007-07-20 | 2012-12-21 | Applied Materials Inc | Dual-mode robot systems,substrate transfer apparatus and methods for electronic device manufacturing, and method of calibrating |
JP4488037B2 (ja) * | 2007-07-24 | 2010-06-23 | パナソニック株式会社 | 半導体ウェハの処理方法 |
JP5205012B2 (ja) | 2007-08-29 | 2013-06-05 | 株式会社半導体エネルギー研究所 | 表示装置及び当該表示装置を具備する電子機器 |
JP4858395B2 (ja) | 2007-10-12 | 2012-01-18 | パナソニック株式会社 | プラズマ処理装置 |
US7829477B2 (en) * | 2007-10-29 | 2010-11-09 | E.I. Dupont De Nemours And Company | Fluorinated water soluble copolymers |
JP2009117718A (ja) * | 2007-11-08 | 2009-05-28 | Nitto Denko Corp | ダイシング用粘着シート |
US7859084B2 (en) | 2008-02-28 | 2010-12-28 | Panasonic Corporation | Semiconductor substrate |
WO2009111344A2 (en) | 2008-02-29 | 2009-09-11 | Applied Materials, Inc. | Method and apparatus for removing polymer from a substrate |
JP5826027B2 (ja) | 2008-03-21 | 2015-12-02 | イムラ アメリカ インコーポレイテッド | レーザベースの材料加工方法及びシステム |
JP2009231632A (ja) * | 2008-03-24 | 2009-10-08 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法 |
JP2009260272A (ja) | 2008-03-25 | 2009-11-05 | Panasonic Corp | 基板の加工方法および半導体チップの製造方法ならびに樹脂接着層付き半導体チップの製造方法 |
US20090255911A1 (en) | 2008-04-10 | 2009-10-15 | Applied Materials, Inc. | Laser scribing platform and hybrid writing strategy |
JP5155030B2 (ja) * | 2008-06-13 | 2013-02-27 | 株式会社ディスコ | 光デバイスウエーハの分割方法 |
US20100013036A1 (en) | 2008-07-16 | 2010-01-21 | Carey James E | Thin Sacrificial Masking Films for Protecting Semiconductors From Pulsed Laser Process |
US8426250B2 (en) | 2008-10-22 | 2013-04-23 | Intel Corporation | Laser-assisted chemical singulation of a wafer |
US20100129984A1 (en) * | 2008-11-26 | 2010-05-27 | George Vakanas | Wafer singulation in high volume manufacturing |
JP5581338B2 (ja) | 2009-01-11 | 2014-08-27 | アプライド マテリアルズ インコーポレイテッド | 電子デバイス製造において基板を搬送するためのロボットシステム、装置、および方法 |
WO2010082328A1 (ja) * | 2009-01-15 | 2010-07-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2010165963A (ja) * | 2009-01-19 | 2010-07-29 | Furukawa Electric Co Ltd:The | 半導体ウェハの処理方法 |
US8609512B2 (en) | 2009-03-27 | 2013-12-17 | Electro Scientific Industries, Inc. | Method for laser singulation of chip scale packages on glass substrates |
US8642448B2 (en) * | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
US8802545B2 (en) | 2011-03-14 | 2014-08-12 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
US8912077B2 (en) | 2011-06-15 | 2014-12-16 | Applied Materials, Inc. | Hybrid laser and plasma etch wafer dicing using substrate carrier |
JP2016207737A (ja) | 2015-04-17 | 2016-12-08 | 株式会社ディスコ | 分割方法 |
-
2011
- 2011-06-15 US US13/160,713 patent/US8642448B2/en active Active
- 2011-06-20 KR KR1020147016661A patent/KR101940091B1/ko active IP Right Grant
- 2011-06-20 KR KR1020147033266A patent/KR101880973B1/ko active IP Right Grant
- 2011-06-20 KR KR1020217018780A patent/KR102392411B1/ko active IP Right Grant
- 2011-06-20 CN CN201510982784.7A patent/CN105428281B/zh active Active
- 2011-06-20 KR KR1020127028305A patent/KR101511648B1/ko active IP Right Grant
- 2011-06-20 CN CN201180021218.XA patent/CN102986006B/zh active Active
- 2011-06-20 KR KR1020207016384A patent/KR102273854B1/ko active IP Right Grant
- 2011-06-20 KR KR1020197000628A patent/KR102088754B1/ko active IP Right Grant
- 2011-06-20 JP JP2013516658A patent/JP5688453B2/ja active Active
- 2011-06-20 KR KR1020197026664A patent/KR102122940B1/ko active IP Right Grant
- 2011-06-20 WO PCT/US2011/041126 patent/WO2011163149A2/en active Application Filing
- 2011-06-21 TW TW100121661A patent/TWI488229B/zh active
- 2011-06-21 TW TW103140448A patent/TWI547987B/zh active
- 2011-06-21 TW TW103116415A patent/TWI520204B/zh active
-
2014
- 2014-01-03 US US14/146,887 patent/US8853056B2/en active Active
- 2014-09-03 US US14/476,060 patent/US9245802B2/en active Active
- 2014-10-30 JP JP2014221016A patent/JP2015057840A/ja active Pending
- 2014-12-19 JP JP2014257046A patent/JP6543461B2/ja active Active
-
2016
- 2016-01-25 US US15/005,700 patent/US10163713B2/en active Active
-
2017
- 2017-05-09 JP JP2017092862A patent/JP6642937B2/ja active Active
-
2018
- 2018-11-16 US US16/193,886 patent/US10566238B2/en active Active
-
2019
- 2019-12-06 US US16/706,541 patent/US10714390B2/en active Active
-
2020
- 2020-05-27 US US16/885,142 patent/US10910271B2/en active Active
- 2020-12-29 US US17/137,099 patent/US11621194B2/en active Active
-
2023
- 2023-03-02 US US18/116,736 patent/US20230207393A1/en active Pending
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6642937B2 (ja) | フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング | |
US8883614B1 (en) | Wafer dicing with wide kerf by laser scribing and plasma etching hybrid approach | |
JP6516470B2 (ja) | 水溶性ダイアタッチフィルムを用いたレーザ・プラズマエッチングウェハダイシング | |
JP6543466B2 (ja) | 物理的に除去可能なマスクを用いたレーザ・プラズマエッチングウェハダイシング | |
JP5926448B2 (ja) | Uv反応性接着フィルムを用いたレーザ・プラズマエッチングウェハダイシング | |
JP6109159B2 (ja) | マルチパルスバーストのパルス列レーザ及びプラズマエッチングを用いたウェハダイシング |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140619 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141020 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20141020 |
|
TRDD | Decision of grant or rejection written | ||
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20141226 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150106 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150126 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5688453 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |