JP5673924B2 - 分子線エピタキシー装置 - Google Patents
分子線エピタキシー装置 Download PDFInfo
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- JP5673924B2 JP5673924B2 JP2010190966A JP2010190966A JP5673924B2 JP 5673924 B2 JP5673924 B2 JP 5673924B2 JP 2010190966 A JP2010190966 A JP 2010190966A JP 2010190966 A JP2010190966 A JP 2010190966A JP 5673924 B2 JP5673924 B2 JP 5673924B2
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- 238000001451 molecular beam epitaxy Methods 0.000 title claims description 35
- 150000003254 radicals Chemical class 0.000 claims description 72
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- 238000009616 inductively coupled plasma Methods 0.000 claims description 19
- 150000004767 nitrides Chemical class 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 230000003071 parasitic effect Effects 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 17
- 150000002831 nitrogen free-radicals Chemical class 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 12
- 230000002265 prevention Effects 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000010992 reflux Methods 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910001873 dinitrogen Inorganic materials 0.000 description 8
- 239000000498 cooling water Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005347 demagnetization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000828 alnico Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 hydrogen radicals Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000001072 vacuum ultraviolet spectrophotometry Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/3266—Magnetic control means
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2443—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube
- H05H1/2465—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube the plasma being activated by inductive coupling, e.g. using coiled electrodes
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
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- H01J2237/083—Beam forming
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- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Fluid Mechanics (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Description
第5の発明は、第1の発明から第4の発明において、ラジカル源は、供給管により窒素が供給され、窒素ラジカルを生成する窒素ラジカル源であり、結晶成長させる化合物は窒化物である、ことを特徴とする分子線エピタキシー装置である。
2:基板ステージ
3:基板
4A〜C:分子線セル
5:ラジカル源
10:供給管
11:プラズマ生成管
12:コイル
13:CCP電極
14:永久磁石
15:寄生プラズマ防止管
16:給水管
17:排水管
18:筐体
Claims (6)
- ラジカルを生成するラジカル源と、分子線あるいは原子線を生成する分子線セルと、内部に基板を保持する真空容器とを有し、真空中において前記ラジカルと前記分子線あるいは原子線を基板に照射することによって、前記ラジカルの元素と前記分子線あるいは原子線の元素とで構成される化合物を前記基板上に結晶成長させる分子線エピタキシー装置において、
前記ラジカル源は、
気体を供給する導体から成る供給管と、
前記供給管の下流側において前記供給管と接続する誘電体からなるプラズマ生成管と、
前記プラズマ生成管の外壁に位置し、前記プラズマ生成管の内部に誘導結合プラズマを発生させるコイルと、
前記プラズマ生成管の外壁であって、前記コイルよりも前記供給管に近い側に位置し、前記プラズマ生成管の内部に容量結合プラズマを発生させて誘導結合プラズマ中に容量結合プラズマを導入する電極と、
誘電体からなり、前記供給管の開口であって前記供給管と前記プラズマ生成管との接続側に挿入され、前記供給管の内壁を覆う寄生プラズマ防止管と、
を有する、
ことを特徴とする分子線エピタキシー装置。 - 前記ラジカル源は、前記容量結合プラズマの発生する領域の前記プラズマ生成管外周に沿って配置され、前記プラズマ生成管の中心部に前記容量結合プラズマを偏在させる複数の永久磁石をさらに有することを特徴とする請求項1に記載の分子線エピタキシー装置。
- 前記電極は、その内部で水を還流させる中空部を有し、
前記永久磁石は、前記電極の内部であって、前記中空部に露出するよう配置されている、ことを特徴とする請求項2に記載の分子線エピタキシー装置。 - 前記電極は、円筒形状であることを特徴とする請求項1乃至請求項3の何れか1項に記載の分子線エピタキシー装置。
- 前記ラジカル源は、前記供給管により窒素が供給され、窒素ラジカルを生成する窒素ラジカル源であり、結晶成長させる前記化合物は窒化物である、ことを特徴とする請求項1乃至請求項4の何れか1項に記載の分子線エピタキシー装置。
- 前記分子線セルは、III 族金属の分子線を生成するものであり、結晶成長させる前記化合物は、III 族窒化物半導体であることを特徴とする請求項5に記載の分子線エピタキシー装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010190966A JP5673924B2 (ja) | 2010-08-27 | 2010-08-27 | 分子線エピタキシー装置 |
EP11819589.0A EP2610895B1 (en) | 2010-08-27 | 2011-08-24 | Radical source and molecular beam epitaxy apparatus |
PCT/JP2011/004684 WO2012026113A1 (ja) | 2010-08-27 | 2011-08-24 | ラジカル源及び分子線エピタキシー装置 |
US13/819,284 US9447518B2 (en) | 2010-08-27 | 2011-08-24 | Radical generator and molecular beam epitaxy apparatus |
US15/242,263 US10577719B2 (en) | 2010-08-27 | 2016-08-19 | Radical generator and molecular beam epitaxy apparatus |
Applications Claiming Priority (2)
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JP2010190966A JP5673924B2 (ja) | 2010-08-27 | 2010-08-27 | 分子線エピタキシー装置 |
JP2010190697A JP2012047625A (ja) | 2010-08-27 | 2010-08-27 | ナノインデンテーション試験用圧子及びその製造方法 |
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JP2014252892A Division JP5938809B2 (ja) | 2014-12-15 | 2014-12-15 | 分子線エピタキシー装置 |
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JP2012049375A JP2012049375A (ja) | 2012-03-08 |
JP2012049375A5 JP2012049375A5 (ja) | 2013-12-05 |
JP5673924B2 true JP5673924B2 (ja) | 2015-02-18 |
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US (1) | US9447518B2 (ja) |
JP (1) | JP5673924B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5669084B2 (ja) * | 2010-08-27 | 2015-02-12 | 国立大学法人名古屋大学 | ラジカル源 |
TWI651429B (zh) * | 2014-01-15 | 2019-02-21 | 澳洲商葛利文企業有限公司 | 用於減少薄膜中不純物之裝置及方法 |
EP3113583B1 (en) | 2014-02-24 | 2020-08-12 | National University Corporation Nagoya University | Radical source and molecular beam epitaxy device |
JP5896384B2 (ja) * | 2014-12-05 | 2016-03-30 | 国立大学法人名古屋大学 | ラジカル源 |
WO2016179032A1 (en) * | 2015-05-04 | 2016-11-10 | Vranich Michael N | External plasma system |
SG11202008969PA (en) * | 2018-03-23 | 2020-10-29 | Applied Materials Inc | Isolated backside helium delivery system |
KR102661678B1 (ko) * | 2018-04-26 | 2024-04-26 | 내셔널 유니버시티 코포레이션 토카이 내셔널 하이어 에듀케이션 앤드 리서치 시스템 | 원자선 발생 장치, 접합 장치, 표면 개질 방법 및 접합 방법 |
DE102022131435A1 (de) * | 2022-11-28 | 2024-05-29 | TRUMPF Hüttinger GmbH + Co. KG | Vorrichtung zur Erzeugung einer Plasmaflamme, Plasmaerzeugungseinrichtung, Hochtemperaturprozessanlage und entsprechendes Betriebsverfahren |
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JP2603331B2 (ja) * | 1989-02-21 | 1997-04-23 | 日本電信電話株式会社 | パルスガスノズル装置およびパルスガスノズル反応装置 |
KR100483886B1 (ko) * | 2002-05-17 | 2005-04-20 | (주)엔피씨 | 나노분말 양산용 고주파 유도 플라즈마 반응로 |
JP4590225B2 (ja) * | 2004-03-26 | 2010-12-01 | 学校法人同志社 | 分子線エピタキシャル成長装置およびそれを用いたシリコン基板上へのiii族窒化物単結晶膜の製造方法 |
JP4572100B2 (ja) * | 2004-09-28 | 2010-10-27 | 日本エー・エス・エム株式会社 | プラズマ処理装置 |
JP4825630B2 (ja) | 2006-09-19 | 2011-11-30 | 学校法人同志社 | 金属窒素化合物の分子線エピタキシー成膜方法及び装置 |
JP5024667B2 (ja) * | 2007-06-20 | 2012-09-12 | 国立大学法人名古屋大学 | ラジカル発生装置 |
JP5317162B2 (ja) * | 2008-03-18 | 2013-10-16 | 学校法人中部大学 | プラズマ装置、プラズマ処理装置及びプラズマ処理方法 |
JP5021556B2 (ja) * | 2008-04-30 | 2012-09-12 | 株式会社ニッシン | 放電装置 |
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2010
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