SG11202008969PA - Isolated backside helium delivery system - Google Patents
Isolated backside helium delivery systemInfo
- Publication number
- SG11202008969PA SG11202008969PA SG11202008969PA SG11202008969PA SG11202008969PA SG 11202008969P A SG11202008969P A SG 11202008969PA SG 11202008969P A SG11202008969P A SG 11202008969PA SG 11202008969P A SG11202008969P A SG 11202008969PA SG 11202008969P A SG11202008969P A SG 11202008969PA
- Authority
- SG
- Singapore
- Prior art keywords
- delivery system
- backside helium
- helium delivery
- isolated backside
- isolated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862647102P | 2018-03-23 | 2018-03-23 | |
PCT/US2019/018675 WO2019182709A1 (en) | 2018-03-23 | 2019-02-20 | Isolated backside helium delivery system |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202008969PA true SG11202008969PA (en) | 2020-10-29 |
Family
ID=67987905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202008969PA SG11202008969PA (en) | 2018-03-23 | 2019-02-20 | Isolated backside helium delivery system |
Country Status (6)
Country | Link |
---|---|
US (1) | US11227746B2 (en) |
JP (1) | JP7332614B2 (en) |
KR (1) | KR102679590B1 (en) |
SG (1) | SG11202008969PA (en) |
TW (1) | TWI733095B (en) |
WO (1) | WO2019182709A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11794296B2 (en) | 2022-02-03 | 2023-10-24 | Applied Materials, Inc. | Electrostatic chuck with porous plug |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6060060A (en) * | 1983-09-12 | 1985-04-06 | 株式会社日立製作所 | Switchgear for door of railway rolling stock |
IL71530A (en) * | 1984-04-12 | 1987-09-16 | Univ Ramot | Method and apparatus for surface-treating workpieces |
JP3050716B2 (en) * | 1993-02-20 | 2000-06-12 | 東京エレクトロン株式会社 | Plasma processing equipment |
US5542559A (en) * | 1993-02-16 | 1996-08-06 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus |
US5775416A (en) * | 1995-11-17 | 1998-07-07 | Cvc Products, Inc. | Temperature controlled chuck for vacuum processing |
US5761023A (en) * | 1996-04-25 | 1998-06-02 | Applied Materials, Inc. | Substrate support with pressure zones having reduced contact area and temperature feedback |
US5835334A (en) * | 1996-09-30 | 1998-11-10 | Lam Research | Variable high temperature chuck for high density plasma chemical vapor deposition |
US6138745A (en) | 1997-09-26 | 2000-10-31 | Cvc Products, Inc. | Two-stage sealing system for thermally conductive chuck |
US6500299B1 (en) * | 1999-07-22 | 2002-12-31 | Applied Materials Inc. | Chamber having improved gas feed-through and method |
US6645344B2 (en) * | 2001-05-18 | 2003-11-11 | Tokyo Electron Limited | Universal backplane assembly and methods |
TW561515B (en) * | 2001-11-30 | 2003-11-11 | Tokyo Electron Ltd | Processing device, and gas discharge suppressing member |
US7244311B2 (en) * | 2004-10-13 | 2007-07-17 | Lam Research Corporation | Heat transfer system for improved semiconductor processing uniformity |
US20080226838A1 (en) * | 2007-03-12 | 2008-09-18 | Kochi Industrial Promotion Center | Plasma CVD apparatus and film deposition method |
JP5673924B2 (en) * | 2010-08-27 | 2015-02-18 | 国立大学法人名古屋大学 | Molecular beam epitaxy equipment |
US10879046B2 (en) * | 2015-09-11 | 2020-12-29 | Applied Materials, Inc. | Substrate support with real time force and film stress control |
US10927449B2 (en) * | 2017-01-25 | 2021-02-23 | Applied Materials, Inc. | Extension of PVD chamber with multiple reaction gases, high bias power, and high power impulse source for deposition, implantation, and treatment |
KR20190133276A (en) * | 2017-04-21 | 2019-12-02 | 어플라이드 머티어리얼스, 인코포레이티드 | Improved Electrode Assembly |
JP6490754B2 (en) | 2017-07-12 | 2019-03-27 | Sppテクノロジーズ株式会社 | Plasma processing equipment |
JP7333346B2 (en) * | 2018-06-08 | 2023-08-24 | アプライド マテリアルズ インコーポレイテッド | Apparatus for suppressing parasitic plasma in plasma-enhanced chemical vapor deposition chamber |
US11646183B2 (en) * | 2020-03-20 | 2023-05-09 | Applied Materials, Inc. | Substrate support assembly with arc resistant coolant conduit |
-
2019
- 2019-02-20 WO PCT/US2019/018675 patent/WO2019182709A1/en active Application Filing
- 2019-02-20 KR KR1020207030328A patent/KR102679590B1/en active IP Right Grant
- 2019-02-20 SG SG11202008969PA patent/SG11202008969PA/en unknown
- 2019-02-20 US US16/980,931 patent/US11227746B2/en active Active
- 2019-02-20 JP JP2020550129A patent/JP7332614B2/en active Active
- 2019-03-20 TW TW108109539A patent/TWI733095B/en active
Also Published As
Publication number | Publication date |
---|---|
JP7332614B2 (en) | 2023-08-23 |
US20200411283A1 (en) | 2020-12-31 |
KR20200124762A (en) | 2020-11-03 |
KR102679590B1 (en) | 2024-06-27 |
TWI733095B (en) | 2021-07-11 |
TW201946189A (en) | 2019-12-01 |
JP2021518668A (en) | 2021-08-02 |
US11227746B2 (en) | 2022-01-18 |
WO2019182709A1 (en) | 2019-09-26 |
CN111989770A (en) | 2020-11-24 |
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