JP5214251B2 - 高密度低エネルギープラズマ気相エピタキシーの装置 - Google Patents
高密度低エネルギープラズマ気相エピタキシーの装置 Download PDFInfo
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C30B23/08—Epitaxial-layer growth by condensing ionised vapours
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02612—Formation types
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- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Crystallography & Structural Chemistry (AREA)
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- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Lasers (AREA)
Description
本出願は、2006年2月28日に出願された米国暫定特許出願第60/657,208号を優先権主張としたPCT出願であり、その内容は参照することにより本出願に組み込まれる。
米国特許文献
6472300 10/2002 Nikolaev et al.
6706119 3/2004 Tsvetkov et al.
6818061 11/2004 Peczalski et al.
5633192 5/1997 Moustakas et al.
6454855 9/2002 von Kanel et al.
6918352 7/2005 von Kanel et al.
5580420 12/1996 Watanabe et al.
4368092 1/1983 Steinberg et al.
4948458 8/1990 Ogle
6811611 11/2004 Johnson
5788799 8/1998 Sterger et al.
その他の特許文献
WO2006/000846 1/2006 von Kanel et al.
追加出版物
J.D.Brown et al.,「シリコン(111)基板上の100mmGaNに製造されたAlGaN/GaN HFETs」, Solid-State Electronics, VOl. 46, No. 10 (October 2002) pp. 1535-1539.
S. Nakamura,「InGaNベースのレーザーダイオード」, Annual Reviews on Material Science, Vol. 28 (1998) pp. 125-152.
S. Nakamura,「InGaNベースの青色発光ダイオード及びレーザーダイオードにおける構造不完全性の役割」, Science, Vol. 281 (14 August 1998) pp. 956-961.
G.A.Smith et al.,「ハイドライド気相エピタキシー紫外発光ダイオードからの341nm発光」, Journal of Applied Physics, Vol. 95, No. 12 (15 June 2004) pp. 8247-8251.
R. F. Davis et al.,「窒化ガリウム物質−進歩、現状及び潜在的な障害」, Proceedings of the IEEE, Vol. 90, No. 6 (June 2002) pp. 993-1004.
A. Dadger et al.,「シリコン上での窒化ガリウムの有機金属化学気相エピタキシー」, physica status solidi (c), Vol. 0, No. 6 (September 2003) pp. 1583-1606.
T. Wang et al.,「サファイア基板に成育されたAlGaN−GaNヘテロ構造における104cm2/Vs以上の電子移動性」, Applied Physics Letters, Vol. 74, No. 23 (7 June 1999) pp. 3531-3533.
J. Blasing et al.,「低温AIN中間層による応力低減の原因」, Applied Physics Letters, Vol. 81, No. 15 (7 October 2002) pp. 2722-2724.
C. R. Elsass,「プラズマアシスト分子線エピタキシーによって成長されたAlGaN/GaNヘテロ構造における電子輸送」, Japanese Journal of Applied Physics, Vol. 39, Part 2, No. 10B (15 October 2000) pp. L1023-1025.
C. Rosenbladet. al.,「低エネルギープラズマ化学気相成長法によるシリコンエピタキシー」, Journal of Vacuum Science and Technology A, Vol. 16, No. 5 (Sept/Oct 1998), pp. 2785-2790.
Heung-Sik Tae et al.,「超高真空電子サイクロトロン共鳴化学気相成長法による低温シリコンホモエピタキシー」, Applied Physics Letters, Vol. 64, No. 8 (21 February 1994) pp. 1021-1023.
C. B. Vartuli et al.,「III‐V族窒化物のICI/Ar電子サイクロトロン共鳴プラズマエッチング」, Applied Physics Letters, Vol. 69, No. 10 (2 September 1996), pp. 1426-1428.
W. Z. Collison et al.,「プラズマモデリング及びラングミュア探針を用いた大ウエハーの低圧誘導結合プラズマエッチングの研究」, Journal of Vacuum Science and Technology A, Vol. 16, No. 1 (Jan/Feb 1998), pp. 100-107.
R. J. Shul et al.,「GaNの誘導結合プラズマエッチング」, Applied Physics Letters, Vol. 69, No. 8 (19 August 1996), pp. 1119-1121.
J. Hopwood,「プラズマ処理に用いられる誘導結合プラズマの検討」, Plasma Source Science and Technology, Vol. 1, No. 2 (May 1992) pp. 109-116.
D. S. Green et. al.,「高周波プラズマアシスト分子線エピタキシーにおけるGaNのCBr4との炭素ドーピング」, Journal of Applied Physics, Vol. 95, No. 12 (15 June 2004) pp.8456-8462.
H. von Kanel,「低エネルギープラズマ化学気相成長法によって成長された変調ドープGe量子井戸における超高正孔移動度」, Applied Physics Letters, Vol. 80, No. 16 (22 April 2002) pp. 2922-2924.
P. Sutter et al.,「スパッタエピタキシャルSi/SiI-xGexヘテロ構造における量子輸送」, Applied Physics Letters, Vol. 67, No. 26 (25 December 1995) pp.3954-3956.
20 堆積チャンバー
21 チャンバー内部
22 ガス注入口
23 ガス管
24 排気管
26 絶縁体
28 誘電体窓
30 コイルアセンブリ
32 インピーダンス整合回路網
34 高周波発生器
36 プラズマ
40 エフュージョンセル
40a 付加的なエフュージョンセル
42 高速シャッター
50 堆積アセンブリ/基板ホルダ
54 基板
55 成長膜
56 インピーダンス整合回路網
58 高周波発生器
60 スパッタ源
62 スパッタターゲット/スパッタガン
64 インピーダンス整合回路
66 電源
80 シャッター板
82 シャッターアセンブリ
100 プラズマ源
110 陽極
120 ガス注入口
130 熱陰極
140 アークプラズマ
200 堆積チャンバー/プラズマチャンバー
205 バルブ
210 ターボ分子線ポンプ
220 ロードロック
230 基板加熱アセンブリ
240 ガス管
240a ガス管
250 コイル
300 蒸気放出部/エフュージョンセル
310 シャッター
320 差動排気部
400 基板
Claims (3)
- 半導体エピタキシーのための真空装置であって、該装置は
a.エピタキシャル析出の際に10―2mbarから10―1mbarの間で圧力制御され
た堆積チャンバー(200)と、
b.上記堆積チャンバー内に配置され、基板(400)を保持及び1000℃以下まで加
熱する基板ホルダ(230)と、
c.物質を蒸発させて、元素金属、金属合金またはドーパントを含む気体粒子に気化し、
上記堆積チャンバーに供給する蒸気放出部(300)と、
d.上記堆積チャンバーにガスを供給するガス供給システム(240)と、
e.少なくとも一つの熱陰極(130)と陽極(110)及び不活性ガス注入口(120
)を備え、上記堆積チャンバー(200)内で上記熱陰極(130)と陽極(110)の
間に30V以下のアーク放電プラズマ(140)を発生すると共に、上記基板が上記アー
ク放電プラズマ(140)に晒されるように適合されたプラズマ源(100)と、
f.上記堆積チャンバー(200)におけるアーク放電プラズマ(140)の密度を変化
可能とする磁場を生成するのに適した磁場発生器(250)と、
からなり、上記堆積チャンバー(200)内にガス及び気体粒子を拡散的に伝搬するよ
うに適合され、該ガス及び気体粒子は、反応して低エネルギープラズマ気相エピタキシー
によって上記基板ホルダ(230)に固定され加熱された上記基板(400)上に均一な
エピタキシャル半導体層(55)を形成するように、プラズマ(140)によって活性化
されることを特徴とする装置。 - 上記エピタキシャル半導体層が成長する際に、上記アーク放電プラズマ(140)に露
出された上記基板(400)は20V以下のエネルギーを有するイオンによる衝撃を受け
ることを特徴とする請求項1に記載の装置。 - 上記基板(400)における平均プラズマ均一性を向上させるように、磁場の方向を周
期的に変化させるための手段(70)が備えられることを特徴とする請求項1に記載の装
置。
Applications Claiming Priority (3)
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US65720805P | 2005-02-28 | 2005-02-28 | |
US60/657,208 | 2005-02-28 | ||
PCT/IB2006/000421 WO2006097804A2 (en) | 2005-02-28 | 2006-02-28 | System and process for high-density,low-energy plasma enhanced vapor phase epitaxy |
Publications (3)
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JP2008532306A JP2008532306A (ja) | 2008-08-14 |
JP2008532306A5 JP2008532306A5 (ja) | 2009-03-26 |
JP5214251B2 true JP5214251B2 (ja) | 2013-06-19 |
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Country Status (10)
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US (2) | US8647434B2 (ja) |
EP (1) | EP1872383A2 (ja) |
JP (1) | JP5214251B2 (ja) |
KR (2) | KR101358966B1 (ja) |
CN (1) | CN101128911B (ja) |
AU (1) | AU2006224282B2 (ja) |
CA (1) | CA2597623C (ja) |
RU (1) | RU2462786C2 (ja) |
SG (1) | SG160345A1 (ja) |
WO (1) | WO2006097804A2 (ja) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE412999T1 (de) * | 2003-09-05 | 2008-11-15 | Epispeed S A | Durch lepecvd und mocvd auf silizium hergestellte gaas/gaas-laser |
KR100754404B1 (ko) * | 2006-05-25 | 2007-08-31 | 삼성전자주식회사 | 확산튜브와, 확산공정용 도펀트 소스 및 상기 확산튜브와도펀트 소스를 이용한 확산방법 |
JP5041883B2 (ja) * | 2007-06-07 | 2012-10-03 | 昭和電工株式会社 | Iii族窒化物半導体層の製造方法、iii族窒化物半導体発光素子の製造方法 |
JP4982259B2 (ja) * | 2007-06-14 | 2012-07-25 | 昭和電工株式会社 | Iii族窒化物化合物半導体発光素子の製造方法 |
WO2009024533A1 (en) * | 2007-08-17 | 2009-02-26 | Epispeed Sa | Apparatus and method for producing epitaxial layers |
CN102171795A (zh) | 2008-10-03 | 2011-08-31 | 维易科加工设备股份有限公司 | 气相外延*** |
CN101494151B (zh) * | 2009-03-05 | 2013-11-13 | 苏州晶能科技有限公司 | 高效率的一维线性等离子体清洗磁控阴极装置 |
JP2011213557A (ja) * | 2010-04-01 | 2011-10-27 | Hitachi Cable Ltd | 導電性iii族窒化物単結晶基板の製造方法 |
TWI562195B (en) | 2010-04-27 | 2016-12-11 | Pilegrowth Tech S R L | Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication |
US8884525B2 (en) * | 2011-03-22 | 2014-11-11 | Advanced Energy Industries, Inc. | Remote plasma source generating a disc-shaped plasma |
DE102012201953A1 (de) * | 2012-02-09 | 2013-08-14 | Singulus Technologies Ag | Verfahren und Vorrichtung zur Passivierung von Solarzellen mit einer Aluminiumoxid-Schicht |
CN102534511B (zh) * | 2012-02-28 | 2013-10-16 | 东北大学 | 一种气相沉积薄膜的装置及其使用方法 |
WO2014008557A1 (en) * | 2012-07-13 | 2014-01-16 | Gallium Enterprises Pty Ltd | Apparatus and method for film formation |
KR101456549B1 (ko) * | 2012-09-10 | 2014-10-31 | 한국표준과학연구원 | 플라즈마 도움 화학 기상 증착 장치 및 플라즈마 도움 화학 기상 증착 방법 |
RU2548578C2 (ru) * | 2013-08-19 | 2015-04-20 | Валерий Анатольевич Буробин | Способ получения эпитаксиального слоя бинарного полупроводникового материала на монокристаллической подложке посредством металлоорганического химического осаждения из газовой фазы |
US9378941B2 (en) | 2013-10-02 | 2016-06-28 | Applied Materials, Inc. | Interface treatment of semiconductor surfaces with high density low energy plasma |
CN104752162A (zh) * | 2013-12-31 | 2015-07-01 | 江西省昌大光电科技有限公司 | 一种半绝缘GaN薄膜及其制备方法 |
CN103806093B (zh) * | 2014-02-17 | 2017-01-18 | 清华大学 | 基于icp的化合物半导体的外延生长装置及方法 |
RU2578870C2 (ru) * | 2014-03-26 | 2016-03-27 | Открытое акционерное общество "Ордена Трудового Красного Знамени Научно-исследовательский физико-химический институт им. Л.Я. Карпова" (ОАО "НИФХИ им. Л.Я. Карпова") | Способ выращивания пленки нитрида галлия |
CN103938272A (zh) * | 2014-04-03 | 2014-07-23 | 清华大学 | 等离子体辅助的外延生长装置及方法 |
RU2570099C1 (ru) * | 2014-08-05 | 2015-12-10 | Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") | Способ изготовления полупроводниковой гетероструктуры |
WO2016031039A1 (ja) * | 2014-08-29 | 2016-03-03 | 創光科学株式会社 | エピタキシャル成長用テンプレート及びその作製方法、並びに、窒化物半導体装置 |
TWI728197B (zh) | 2016-10-24 | 2021-05-21 | 美商克萊譚克公司 | 整合至一計量及/或檢測工具中之製程模組 |
WO2019005144A1 (en) * | 2017-06-30 | 2019-01-03 | Intel Corporation | HIGH FLOW MOLECULAR BEAM EPITAXY AND SELECTIVE EPITAXIAL APPARATUS |
RU2657674C1 (ru) * | 2017-08-14 | 2018-06-14 | Федеральное государственное бюджетное учреждение науки Институт общей и неорганической химии им. Н.С. Курнакова Российской академии наук (ИОНХ РАН) | Способ получения гетероструктуры Mg(Fe1-xGax)2O4/Si со стабильной межфазной границей |
CN107675141B (zh) * | 2017-10-25 | 2023-08-04 | 南昌大学 | 一种用于制备氮化物材料的装置 |
US10892137B2 (en) * | 2018-09-12 | 2021-01-12 | Entegris, Inc. | Ion implantation processes and apparatus using gallium |
DE102018220678A1 (de) * | 2018-11-30 | 2020-06-04 | Thyssenkrupp Ag | Verfahren zum PVD-Beschichten von Werkstücken |
RU2715080C1 (ru) * | 2018-12-18 | 2020-02-25 | Федеральное государственное бюджетное учреждение науки Физический институт им. П.Н. Лебедева Российской академии наук (ФИАН) | Способ наращивания монокристаллических слоёв полупроводниковых структур |
CN109817518B (zh) * | 2019-01-18 | 2020-03-10 | 重庆市妙格科技有限公司 | 一种发光二极管原材料加热磷扩装置 |
CN109830419B (zh) * | 2019-01-24 | 2020-05-19 | 中国原子能科学研究院 | 一种微型潘宁离子源 |
CN113710833B (zh) * | 2019-04-22 | 2023-04-28 | 杜鹏 | 直接蒸发泵至冷板的分子束外延*** |
RU2723477C1 (ru) * | 2019-04-26 | 2020-06-11 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" | Узел фиксации нагреваемой подложки в вакуумной камере (варианты) |
US11150120B2 (en) | 2019-09-22 | 2021-10-19 | Applied Materials, Inc. | Low temperature thermal flow ratio controller |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4368092A (en) | 1981-04-02 | 1983-01-11 | The Perkin-Elmer Corporation | Apparatus for the etching for semiconductor devices |
JPH0652716B2 (ja) * | 1984-08-24 | 1994-07-06 | 日本電信電話株式会社 | 半導体結晶性膜製造装置 |
JPS61135126A (ja) * | 1984-12-06 | 1986-06-23 | Hitachi Ltd | プラズマ処理装置 |
US4948458A (en) | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
JPH03146656A (ja) * | 1989-11-02 | 1991-06-21 | Hitachi Ltd | 膜形成装置及び膜形成方法 |
US5633192A (en) | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
KR100321325B1 (ko) | 1993-09-17 | 2002-06-20 | 가나이 쓰도무 | 플라즈마생성방법및장치와그것을사용한플라즈마처리방법및장치 |
JPH07288237A (ja) * | 1994-04-15 | 1995-10-31 | Nippon Steel Corp | プラズマ励起セル装置 |
US5783101A (en) | 1994-09-16 | 1998-07-21 | Applied Materials, Inc. | High etch rate residue free metal etch process with low frequency high power inductive coupled plasma |
JP3769059B2 (ja) * | 1996-02-02 | 2006-04-19 | 雅弘 西川 | 超音波・プラズマ・粒子ビーム複合プロセス装置及び薄膜の形成方法並びに表面の平滑化方法 |
US5788799A (en) | 1996-06-11 | 1998-08-04 | Applied Materials, Inc. | Apparatus and method for cleaning of semiconductor process chamber surfaces |
JPH1012908A (ja) * | 1996-06-21 | 1998-01-16 | Toshiba Corp | 半導体装置及び微粒子半導体膜の製造方法及び光電変換素子 |
JP4906169B2 (ja) | 1997-06-13 | 2012-03-28 | エリコン・トレーディング・アクチェンゲゼルシャフト,トリュープバッハ | 被覆工作物を製造するための方法、その方法の利用およびそのための装置 |
US6472300B2 (en) | 1997-11-18 | 2002-10-29 | Technologies And Devices International, Inc. | Method for growing p-n homojunction-based structures utilizing HVPE techniques |
WO2001065590A2 (en) * | 2000-03-02 | 2001-09-07 | Tokyo Electron Limited | Esrf source for ion plating epitaxial deposition |
EP2400046A1 (en) | 2001-03-30 | 2011-12-28 | Technologies and Devices International Inc. | Method and apparatus for growing submicron group III nitride structures utilizing HVPE techniques |
US6992011B2 (en) | 2003-01-15 | 2006-01-31 | Tokyo Electron Limited | Method and apparatus for removing material from chamber and wafer surfaces by high temperature hydrogen-containing plasma |
JP2004288964A (ja) * | 2003-03-24 | 2004-10-14 | Sumitomo Electric Ind Ltd | GaN結晶の成長方法 |
US6818061B2 (en) | 2003-04-10 | 2004-11-16 | Honeywell International, Inc. | Method for growing single crystal GaN on silicon |
RU2244984C1 (ru) * | 2003-08-08 | 2005-01-20 | Институт физики полупроводников Объединенного института физики полупроводников СО РАН | Способ изготовления гетероструктуры |
ATE546824T1 (de) | 2004-06-08 | 2012-03-15 | Dichroic Cell S R L | System zur plasmaunterstützten chemischen aufdampfung bei niedrigen energien |
WO2008000846A1 (es) | 2006-06-19 | 2008-01-03 | Natraceutical S.A. | Método para la esterilización de materiales de cacao mediante co2 supercrítico |
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CA2597623C (en) | 2015-07-14 |
RU2462786C2 (ru) | 2012-09-27 |
CN101128911B (zh) | 2010-09-08 |
US9466479B2 (en) | 2016-10-11 |
RU2007135977A (ru) | 2009-04-10 |
CA2597623A1 (en) | 2006-09-21 |
WO2006097804B1 (en) | 2007-02-15 |
JP2008532306A (ja) | 2008-08-14 |
SG160345A1 (en) | 2010-04-29 |
CN101128911A (zh) | 2008-02-20 |
US20130260537A1 (en) | 2013-10-03 |
EP1872383A2 (en) | 2008-01-02 |
KR20120054093A (ko) | 2012-05-29 |
WO2006097804A3 (en) | 2007-01-18 |
AU2006224282B2 (en) | 2012-02-02 |
KR101366181B1 (ko) | 2014-02-24 |
KR20070114361A (ko) | 2007-12-03 |
WO2006097804A2 (en) | 2006-09-21 |
AU2006224282A1 (en) | 2006-09-21 |
US20080152903A1 (en) | 2008-06-26 |
KR101358966B1 (ko) | 2014-02-21 |
US8647434B2 (en) | 2014-02-11 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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LAPS | Cancellation because of no payment of annual fees |