JP5628178B2 - 容量性マイクロマシン超音波トランスデューサ - Google Patents
容量性マイクロマシン超音波トランスデューサ Download PDFInfo
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- JP5628178B2 JP5628178B2 JP2011526605A JP2011526605A JP5628178B2 JP 5628178 B2 JP5628178 B2 JP 5628178B2 JP 2011526605 A JP2011526605 A JP 2011526605A JP 2011526605 A JP2011526605 A JP 2011526605A JP 5628178 B2 JP5628178 B2 JP 5628178B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60B—VEHICLE WHEELS; CASTORS; AXLES FOR WHEELS OR CASTORS; INCREASING WHEEL ADHESION
- B60B1/00—Spoked wheels; Spokes thereof
- B60B1/02—Wheels with wire or other tension spokes
- B60B1/0261—Wheels with wire or other tension spokes characterised by spoke form
- B60B1/0292—Wheels with wire or other tension spokes characterised by spoke form the spoke being bent at both ends
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/002—Electrostatic motors
- H02N1/006—Electrostatic motors of the gap-closing type
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/06—Influence generators
- H02N1/08—Influence generators with conductive charge carrier, i.e. capacitor machines
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
- Apparatuses For Generation Of Mechanical Vibrations (AREA)
Description
Claims (15)
- 容量性マイクロマシン超音波トランスデューサであって、
シリコン基板と、
キャビティと、
前記シリコン基板と前記キャビティとの間に配される第1の電極であって、前記キャビティより下に配される第1の電極と、
前記キャビティより上に、前記第1の電極と対向して配されるメンブレンと、
前記キャビティより上に、前記第1の電極と対向して配される第2の電極であって、前記第2の電極は、前記メンブレン内に又はその近傍に配され、前記第1の電極及び前記第2の電極は、電圧を供給されるように構成される、第2の電極と、
前記第1の電極と前記第2の電極との間に配される第1の絶縁層であって、誘電体を含む第1の絶縁層と、
を有し、前記第1の絶縁層は、酸化物を含む第1のサブレイヤ及び窒化物を含む第2のサブレイヤを有し、酸化物を含む第1のサブレイヤを配して、窒化物を含む第2のサブレイヤにおける電荷トラップを防ぐように構成される、トランスデューサ。 - 前記トランスデューサは、酸化物を含む第3のサブレイヤを更に有する、請求項1に記載のトランスデューサ。
- 前記第2のサブレイヤは、前記第1のサブレイヤと前記第3のサブレイヤとの間に配される、請求項2に記載のトランスデューサ。
- 前記第1の絶縁層は、少なくとも5nmの厚さを有する、請求項1乃至3のいずれか1項に記載のトランスデューサ。
- 前記第1の絶縁層が、前記第1の電極と前記キャビティとの間に配され、前記トランスデューサは、前記第2の電極と前記キャビティとの間に配される第2の絶縁層を有し、前記第2の絶縁層は、誘電体を含む、請求項1乃至4のいずれか1項に記載のトランスデューサ。
- 前記誘電体は、窒化物、酸化アルミニウム又は酸化ハフニウムを含む層のような高k層であり、又はONO層を構成する、請求項1乃至5のいずれか1項に記載のトランスデューサ。
- 前記キャビティは、1気圧以下の圧力を有する、請求項1乃至6のいずれか1項に記載のトランスデューサ。
- 前記キャビティは、真空キャビティである、請求項1乃至7のいずれか1項に記載のトランスデューサ。
- 前記第1の絶縁層の第1のサブレイヤの酸化物がSiO 2 であり、及び/又は前記第1の絶縁層の第2のサブレイヤの窒化物がSi 3 N 4 である、請求項1乃至8のいずれか1項に記載のトランスデューサ。
- 前記第2の電極が、前記メンブレンに組み込まれている、請求項1乃至9のいずれか1項に記載のトランスデューサ。
- 前記トランスデューサは、崩壊トランスデューサタイプ、事前崩壊トランスデューサタイプ、屈曲トランスデューサタイプ及びこれらのタイプの組み合わせを含むトランスデューサタイプのグループからの少なくとも1つのトランスデューサタイプである、請求項1乃至10のいずれか1項に記載のトランスデューサ。
- 請求項1乃至11のいずれか1項に記載のトランスデューサを有するシステム。
- 請求項1乃至11のいずれか1項に記載のトランスデューサの線形アレイ又は2次元アレイを有する、請求項12に記載のシステム。
- 請求項1乃至5、7乃至11のいずれか1項に記載のトランスデューサを製造する方法であって、CMOSプロセスの間の後処理フィーチャとして前記トランスデューサを製造するステップを含む、方法。
- 前記トランスデューサの製造中、400℃以下の温度が使用される、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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EP08305553 | 2008-09-16 | ||
EP08305553.3 | 2008-09-16 | ||
PCT/IB2009/053914 WO2010032156A2 (en) | 2008-09-16 | 2009-09-08 | Capacitive micromachined ultrasound transducer |
Publications (2)
Publication Number | Publication Date |
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JP2012503355A JP2012503355A (ja) | 2012-02-02 |
JP5628178B2 true JP5628178B2 (ja) | 2014-11-19 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011526605A Active JP5628178B2 (ja) | 2008-09-16 | 2009-09-08 | 容量性マイクロマシン超音波トランスデューサ |
Country Status (6)
Country | Link |
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US (2) | US9132693B2 (ja) |
EP (1) | EP2326432A2 (ja) |
JP (1) | JP5628178B2 (ja) |
CN (1) | CN102159334A (ja) |
RU (1) | RU2511671C2 (ja) |
WO (1) | WO2010032156A2 (ja) |
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-
2009
- 2009-09-08 CN CN2009801358887A patent/CN102159334A/zh active Pending
- 2009-09-08 RU RU2011115084/28A patent/RU2511671C2/ru active
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CN102159334A (zh) | 2011-08-17 |
JP2012503355A (ja) | 2012-02-02 |
WO2010032156A3 (en) | 2010-12-29 |
RU2011115084A (ru) | 2012-10-27 |
US20150162851A1 (en) | 2015-06-11 |
US9539854B2 (en) | 2017-01-10 |
WO2010032156A2 (en) | 2010-03-25 |
EP2326432A2 (en) | 2011-06-01 |
RU2511671C2 (ru) | 2014-04-10 |
US9132693B2 (en) | 2015-09-15 |
US20110163630A1 (en) | 2011-07-07 |
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