CN106104779B - 功率用半导体装置 - Google Patents

功率用半导体装置 Download PDF

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Publication number
CN106104779B
CN106104779B CN201580013957.2A CN201580013957A CN106104779B CN 106104779 B CN106104779 B CN 106104779B CN 201580013957 A CN201580013957 A CN 201580013957A CN 106104779 B CN106104779 B CN 106104779B
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power semiconductor
lead terminal
semiconductor apparatus
semiconductor device
seal
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CN106104779A (zh
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藤野纯司
石原三纪夫
新饲雅芳
原田启行
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to CN201910381937.0A priority Critical patent/CN110120375A/zh
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Abstract

具备：陶瓷基板(2)；功率用半导体元件(3)，在一面形成电极(例如3a、3e)，另一面与陶瓷基板(2)接合；引线端子(62)，一端侧与电极接合，另一端侧与外部电连接；以及密封体(7)，对引线端子(62)的与电极接合的部分以及功率用半导体元件(3)进行密封。在引线端子(62)的一端侧的端部(62e)处，形成随着接近端部(62e)而远离陶瓷基板(2)的倾斜面(62t)。

Description

功率用半导体装置
技术领域
本发明涉及功率用半导体装置，特别涉及在与功率用半导体元件的主电极的电连接中使用引线端子的结构。
背景技术
在从工业设备至家电/信息终端的所有产品中，功率用半导体装置得到普及，关于在家电中搭载的功率用半导体装置，连同小型轻质化，还要求能够应对多个品种的高的生产率和高的可靠性。另外，在工作温度高且效率优良这一点上，还同时要求是能够适用于作为今后的主流的可能性高的碳化硅(SiC)半导体的封装方式。
在功率用半导体装置中，由于处理高电压/大电流，所以发热量大，为了高效地排热，将热导率优良的陶瓷基板用作绝缘基板的情况较多。进而，伴随上述功率用半导体元件的高密度化，为了形成高的电流密度的电路，使用将铜电极板直接焊接到功率用半导体元件的主电极的方法。
然而，在陶瓷基板(α：6～7ppm/K)那样的无机物和铜电极板(α：16ppm/K)那样的金属的组合中，相比于以往的使用基于树脂的基板的情况的组合，线膨胀系数(α)的差较大。因此，与温度变化相伴的伸缩的差大，由于与此相伴的热应力，容易发生龟裂等损伤，存在损害长期可靠性的担忧。因此，尝试以在用柔软的聚氨酯树脂密封铜电极板和半导体元件的接合部周边之后用环氧树脂密封整体等、根据区域分别使用物性不同的材料的方式构成密封体而降低应力的方法等(参照例如专利文献1)。
专利文献1：日本特开2006-351737号公报(第0020～0027段、图1)
发明内容
然而，在密封体的物性的调整中有界限，难以仅通过物性的调整来缓和应力。另外，如果如专利文献那样根据区域使用物性不同的密封体，则存在应力集中到物性变化的部分而诱使龟裂等的发生、可靠性反而降低的担忧。
本发明是为了解决上述那样的课题而完成的，其目的在于得到一种对应于大电流的可靠性高的功率用半导体装置。
本发明提供一种功率用半导体装置，其特征在于，具备：电路基板；功率用半导体元件，在一面形成电极，另一面与所述电路基板接合；引线端子，一端侧与所述电极接合，另一端侧与外部电连接；以及密封体，对所述引线端子的与所述电极接合的部分以及所述功率用半导体元件进行密封，在所述引线端子的所述一端侧的端部，形成随着接近所述端部而远离所述电路基板的倾斜面。
根据本发明的功率用半导体装置，在引线端子的端部形成有远离电路基板的倾斜面，所以能够抑制应力向与端部的边界部分集中，得到对应于大电流的可靠性高的功率用半导体装置。
附图说明
图1是用于说明本发明的实施方式1的功率用半导体装置的结构的俯视图和剖面图。
图2是用于说明本发明的实施方式1的功率用半导体装置的制造方法的每个工序的剖面图。
图3是用于说明本发明的实施方式1的功率用半导体装置中的作用效果的、示出现有例和实施例各自的引线端子的端部附近部分的位移的局部剖面图。
图4是用于说明本发明的实施方式1的变形例的功率用半导体装置的结构的引线端子的端部的局部剖面图。
图5是用于说明本发明的实施方式1的变形例的功率用半导体装置的结构的剖面图。
图6是用于说明本发明的实施方式2的功率用半导体装置的结构的剖面图。
(符号说明)
1：功率用半导体装置；2：陶瓷基板(电路基板)；2a、2b：导电层；2i：陶瓷基体材料；3：功率用半导体元件；4：焊料(接合部)；5：信号电路；6：主电流电路；7：密封体；8：壳体；9：粘接剂；61：引线端子；62：引线端子；62c：弯曲部；62e：端部；62f：平坦部；62t：倾斜面。
具体实施方式
实施方式1.
图1～图3是用于说明本发明的实施方式1的功率用半导体装置的结构及其制造方法的图，图1(a)是从功率用半导体装置去掉密封树脂的状态的俯视图，图1(b)是与图1(a)的A-A线对应的剖面图。另外，图2是用于说明功率用半导体装置的制造方法的与图1(b)对应的每个工序的剖面图，图3是示出在现有例和实施例中温度分别从常温变化到高温时的引线端子的端部相对功率用半导体元件的位移的局部剖面图。
另外，图4是用于说明作为第一变形例而使引线端子的端部的形状变化而成的结构的引线端子的端部的局部剖面图。进而，图5是用于说明作为第二变形例而使密封体的形态变化而成的结构的剖面图，与图1(a)的A-A线对应。
本实施方式1的功率用半导体装置的特征在于与元件的主电极接合的引线端子的端部的形状，但首先，说明功率用半导体装置的基本结构。本实施方式1的功率用半导体装置1如图1所示，针对作为电路基板的陶瓷基板2的导电层2a，通过焊料4而管芯键合(接合)有功率用半导体元件3(有时简称为“元件”)。
陶瓷基板2在40mm×25mm×厚度0.635mm的氮化铝(AlN)制的陶瓷基体材料2i的两面形成有厚度0.4mm的铜的导电层2a、2b。功率用半导体元件3是使用作为宽带隙半导体材料的SiC的元件，作为开关元件，使用形成为厚度0.25mm、15mm见方的矩形板状的IGBT(Insulated Gate Bipolar Transistor，绝缘栅双极型晶体管)3S，作为整流元件，使用形成为厚度0.25mm、15mm×15mm的矩形板状的二极管3R。
对功率用半导体元件3的各主电极中的包括IGBT3S的发射极电极3e的表侧的主电极(3a、3e)，接合有作为本发明的特征的引线端子62的一端部。另外，针对接合有包括IGBT3S的集电极电极3c的各元件的背侧的电极的导电层2a，通过焊料4而接合宽度8mm×厚度0.7mm的铜板制的引线端子61。
在48mm×28mm×高度12mm的PPS(Poly Phenylene Sulfide，聚苯硫醚)树脂制的壳体8的内部，以填埋与陶瓷基体材料2i部分的间隙的方式，使用聚硅酮制的粘接剂9来对陶瓷基板2进行定位并固定。此外，将引线端子61、引线端子62以及信号端子52分别以嵌件成型的方式形成于壳体8，引线端子61和引线端子62的从壳体8的上部(图中左侧上部)露出的宽度10mm的端子部61j、62j为螺纹紧固端子。另外，信号端子52的一端部(宽度：1.5mm)在壳体8的内部通过键合导线51(铝制：φ0.15mm)而与作为IGBT3S的控制电极的栅电极3g电连接，销状的另一端部从壳体8的上部(图中右侧上部)露出。
由此，通过引线端子61和引线端子62，形成功率用半导体元件3和外部电路的主电流电路6。另外，关于IGBT3S的栅电极3g(1mm×2mm)等，通过信号端子52和键合导线51而形成与外部的信号电路5。然后，在壳体8的内部，通过直接灌封来填充树脂(密封体7)，并进行加热硬化而绝缘密封。此外，密封体7的线膨胀系数被调整为引线端子62的线膨胀系数与陶瓷基板2的线膨胀系数的中间的值。
另外，作为本实施方式1的功率用半导体装置1的特征的引线端子62以随着向长边方向的端部62e前进而远离陶瓷基板2以及功率用半导体元件3的方式，设置有倾斜面62t。通过在从(端子部62j的相反侧的)端部62e起朝向接合部分离开2mm的部分，设置相对于引线端子62的与功率用半导体元件3接合的平坦部62f而弯曲的弯曲部62b(上扬角度45度)，从而形成倾斜面62t。即，在引线端子62的向功率用半导体元件3或者陶瓷基板2的对置面中的在壳体8的内部被密封体7密封的部分的端部62e处，以随着接近端部62e而远离功率用半导体元件3或者陶瓷基板2的方式倾斜(设置有倾斜面62t)。
接下来，说明本实施方式1的功率用半导体装置1的制造方法。
首先，如图2(a)所示，通过模型嵌件方式，形成将引线端子61、引线端子62以及信号端子52一体化的壳体8。另一方面，在陶瓷基板2的电路面(导电层2a侧)的预定位置，分别通过焊料4而接合功率用半导体元件3。然后，从上述壳体8的下部(图中下侧)侧，***安装有功率用半导体元件3的陶瓷基板2。
接下来，如图2(b)所示，使用粘接剂9，针对壳体8固定所***的陶瓷基板2。此时，在陶瓷基体材料2i与壳体8的间隙中，填充粘接剂9，所以通过壳体8和陶瓷基板2，形成以陶瓷基板2为底部且上方敞开的容器。另外，引线端子61相对于导电层2a隔开2mm的间隔地对置，引线端子62(平坦部62f)相对于功率用半导体元件3的各主电极3a、3e隔开预定的间隔地对置。另外，在各自之间，设置有未图示的焊料材料。
接下来，在进行加热而使上述焊料回流之后进行冷却，如图2(c)所示，通过焊料4将引线端子61与导电层2a之间、引线端子62与功率用半导体元件3的各主电极3a、3e之间接合。进而，通过键合导线51，将信号端子52中的在壳体8内露出的端部与包括栅电极3g的温度传感器电极等IGBT3S的控制用电极电连接。
最后，在将直接灌封树脂加热到60℃的状态下，使其流入到通过壳体8和陶瓷基板2分隔而成的空间内，进行真空脱泡，并进行加热(100℃、1.5小时→140℃、1.5小时)而硬化。由此，如图1(b)所示，形成密封体7而完成密封，完成功率用半导体装置1(功率模块)。
接下来，说明上述功率用半导体装置1的动作和本发明的作用效果。
关于陶瓷基板2，在AlN制的陶瓷基体材料2i的两面形成有铜的导体层2a、2b，基板整体的线膨胀系数是约10ppm/K，相对于此，铜制的引线端子62的线膨胀系数是16ppm/K。在引线端子62的密封体7中的端部62e附近，通过弯曲部62b而形成倾斜面62t，所以越向端部62e，则引线端子62与元件(在本实施方式1中，IGBT3S)的间隙越宽。因此，随着接近端部62e，介于引线端子62与元件之间的密封体7的树脂的厚度渐增。
另一方面，本发明者针对基于陶瓷基板和引线电极的组合的功率用半导体装置的各种样品，实施了大量的热循环试验。在解析其结果时发现，在大量的样品中，与主电极接合的引线端子的密封体内的端部成为破坏的起点。可知将外部电路和功率用半导体元件的主电极电连接的引线端子基本上以在电路面内纵贯的方式延伸，但在其中，由热应变导致的应力集中到密封体内的端部，成为破坏的起点。
然而，在本发明的实施方式1的功率用半导体装置1中，在端部62e处形成倾斜面62t，所以随着接近端部62e，与元件的间隔渐增。即，随着接近端部62e，介于线膨胀系数不同的物体之间的密封体7的厚度变厚，弯曲强度也变大。另一方面，如果相比于端部62e进一步前进，则引线端子62中断，从而变成密封体7主体的厚度。
另一方面，在使用一般的电极引线的情况下，随着接近端部，密封体的厚度不变化而恒定，但即使在该情况下，如果相比于端部62e进一步前进，则变成密封体7主体的厚度。不论在哪一个情况下，在端子中断的部分，密封体7的厚度按照阶段状变化。但是，在以往的情况下，在端部62e附近沿着长条方向而厚度变化的部分仅为端部62e的一点。相对于此，在本实施方式1中，在被引线端子62夹住的部分，厚度(以及弯曲强度)也变化，厚度变化的部分在包括端部62e的具有长度的范围(倾斜面62t)内分散。因此，能够缓和施加到密封体7的应力集中到与端部62e的边界部分的情形，并延长寿命。
进而，由于上述结构的差异，在应力的分布中也产生差异。在图3中，纵横地排列有引线端子的端部附近部分的4个局部剖面图，在左侧示出现有例，在右侧示出本发明的实施例。另外，在图中，上部表示常温时即停止时的状态，下部表示高温时即起动时的状态。在图中，贯穿上部和下部的虚线分别表示常温时的以往的引线端子62C的端部62e的位置Pe以及实施例的引线端子62的端部62e的位置Pe。另外，从虚线的位置Pe向功率用半导体元件3的最初的交点为元件的主面3p上的处为常温时的端部的正下方的位置Pp。
当从该状态起动后，由于元件的发热而温度上升，变成下部所示的高温状态，在现有例、实施例中，都是由于部件的膨胀而位置Pe、Pp均向图中右侧移动。但是，根据线膨胀系数的差异，相比于功率用半导体元件3的主面3p上的位置Pp，端子的端部(位置Pe)向右前进得更多，所以在端子与元件之间产生位移。该位移自身在现有例和实施例中都相同，但在现有例和实施例中，由于端部62e和元件的间隔(图中上下方向的距离)不同，所以上述应力也不同。
关于热应力，考虑为以常温时的引线端子62(或者62C)向元件的对置面的(图中，端部的)位置Pe以及正下方的元件的主面3p上的位置Pp为基准，同高温时的连接位置Pe与位置Pp的线和与主面3p垂直的线的角度Ae的大小成比例。因此，通过如实施例那样形成倾斜面62t，越接近端部62e，则间隔越宽，从而角度Ae变小，应变变小。即，施加到密封体7的与端部62e的边界部分的应力比以往小。
进而，以端部62e为界的应力的变化也与厚度的变化同样地，延续至形成有倾斜面62t的范围，所以能够缓和破坏的起点集中产生于与端部62e的边界部分，作为结果，延长直至导致破坏的寿命。此外，关于上述机理，依据实施方式1，按元件的主面3p和引线端子62的关系进行了说明，但即使按陶瓷基板2的电路面和引线端子62的关系，也能够进行同样的说明。
第一变形例(引线端子的构造)
在上述例子中，作为形成越接近端部62e则与元件的距离越拉开的倾斜面62t的方法，示出设置使板材弯曲的弯曲部62b的例子，但不限于此。例如，也可以如图4所示的本变形例那样，通过使端部62e部分的壁厚如切角那样变化，从而形成倾斜面62t。即使在该情况下，也能够缓和应力集中、起点集中产生，并延长寿命。
此外，在上述例子中，示出作为陶瓷基体材料2i而使用AlN的例子，但即使使用氧化铝(Al2O3)、氮化硅(SiN)等，也得到同样的效果。另外，示出在导电层2a、2b中使用铜的例子，但即使使用铝，也得到同样的效果。进而，示出将焊料4用于功率用半导体元件3与陶瓷基板2的接合、功率用半导体元件3与引线端子62的接合以及引线端子61与导电层2a的接合的例子，但即使使用使银填料分散于环氧树脂而成的导电性粘接剂、银纳米粉、铜纳米粉那样的对纳米粒子进行低温烧成的接合材料，也得到同样的效果。
另外，示出作为壳体8的材料使用PPS的例子，但如果使用LCP(液晶聚合体：liquid-crystal polymer)，则能够期待进一步提高耐热性。另外，关于形成密封体7的直接灌封树脂，即便是流入而进行常温硬化的种类的树脂，也得到同样的效果。
另外，在上述例子中，二极管3R和IGBT3S是一对一的所谓“1in1”下的模块结构，但即便是2对“2in1”、6对“6in1”，通过在成为引线端子的金属板上配置信号端子，也得到同样的效果。进而，示出作为开关元件而使用IGBT3S的例子，但也可以是例如MOSFET(MetalOxide Semiconductor Field Effect Transistor，金属氧化物半导体场效应晶体管)。另外，作为二极管3R，能够使用SBD(SchottkyBarrier Diode：肖特基势垒二极管)等各种种类的元件。另外，元件数也不限于2个，既可以是2个以上，也可以是1个。
另外，关于信号电路5，示出使用铝制的键合导线51的例子，但即使使用铜制导线、铝包覆铜导线或者金导线，也得到同样的效果。另外，即使使用带连接器(Ribbon bond)、或者使用对金属板进行超声波接合的母线等，也得到同样的效果。
第二变形例(密封体的构造)
在上述例子中，示出在壳体8内灌封树脂来形成密封体7的例子，但不限于此。例如，也可以如图5所示的本变形例那样，不使用壳体而使用未图示的模具，通过传递模成型，形成密封体7M(传递模封装)。
如以上那样，根据本实施方式1的功率用半导体装置1，具备：电路基板(陶瓷基板2)；功率用半导体元件3，在一面形成电极(例如3a、3e)，另一面与电路基板接合；引线端子62，一端侧与电极接合，另一端侧与外部电连接；以及密封体7，对引线端子62的与电极接合的部分以及功率用半导体元件3进行密封，在引线端子62的一端侧的端部62e处，形成(严谨地说，向电路基板的对置面随着接近端部62e而)远离电路基板的倾斜面62t。因此，例如，被密封体7的引线端子62夹住的部分的厚度(以及弯曲强度)变化的部分在包括端部62e的具有长度的范围(倾斜面62t)内分散，所以缓和施加到密封体7的应力集中到与端部62e的边界部分的情形。或者，越接近端部62e，使间隔越宽，从而角度Ae变小，应变变小，施加到密封体7的与端部62e的边界部分的应力比以往小。其结果，即使使用对应于大电流的引线端子62，也能够延长寿命。
此时，例如，如果在端部62e的附近处设置弯曲部62b，则能够容易地形成倾斜面62t。
或者，即使以使壁厚接近端部62e而变薄的方式，设置例如切角部，也能够容易地形成倾斜面62t。
实施方式2.
在本实施方式2的功率用半导体装置中，相对于在实施方式1中说明的功率用半导体装置而变更了引线端子的形态。图6是用于说明本发明的实施方式2的功率用半导体装置的结构的图，是与在实施方式1中使用的图1(a)的A-A线对应的剖面图。在本实施方式2中，关于引线端子以外的结构，包括变形例在内而与在实施方式1中说明的部分相同，所以省略说明。另外，在图中，对与在实施方式1中说明的部分同样的部分附加相同的符号，省略关于重复的部分的详细说明。
本实施方式2的功率用半导体装置1也如图6所示，针对作为电路基板的陶瓷基板2的导电层2a，通过焊料4而管芯键合(接合)有功率用半导体元件3。
作为陶瓷基板2，使用在40mm×25mm×厚度0.635mm的氮化铝制的陶瓷基体材料2i的两面形成有厚度0.4mm的铜的导电层2a、2b的基板。功率用半导体元件3是使用作为宽带隙半导体材料的SiC的元件，作为开关元件，使用形成为厚度0.25mm、15mm见方的矩形板状的IGBT(Insulated Gate Bipolar Transistor，绝缘栅双极型晶体管)3S，作为整流元件，使用形成为厚度0.25mm、15mm×15mm的矩形板状的二极管3R。
对功率用半导体元件3的各主电极中的、包括IGBT3S的发射极电极3e的表侧的主电极(3a、3e)，接合作为本发明的特征的引线端子62的一端部。另外，对接合有包括IGBT3S的集电极电极3c的各元件的背侧的电极的导电层2a，通过焊料4而接合宽度8mm×厚度0.7mm的铜板制的引线端子61。
在48mm×28mm×高度12mm的PPS(Poly Phenylene Sulfide，聚苯硫醚)树脂制的壳体8的内部，以填埋与陶瓷基体材料2i部分的间隙的方式，使用聚硅酮制的粘接剂9，对陶瓷基板2进行定位并固定。此外，将引线端子61、引线端子62以及信号端子52分别以嵌件成型的方式形成于壳体8，引线端子61和引线端子62的从壳体8的上部(图中左侧上部)露出的宽度10mm的端子部61j、62j成为螺纹紧固端子。另外，信号端子52的一端部(宽度：1.5mm)在壳体8的内部通过键合导线51(铝制：φ0.15mm)而与作为IGBT3S的控制电极的栅电极3g电连接，销状的另一端部从壳体8的上部(图中右侧上部)露出。
由此，通过引线端子61和引线端子62，形成功率用半导体元件3和外部电路的主电流电路6。另外，关于IGBT3S的栅电极3g等，通过信号端子52和键合导线51，形成与外部的信号电路5。另外，壳体8的内部与在实施方式1中说明的情况同样地，通过直接灌封来填充树脂(密封体7)，并进行加热硬化而绝缘密封。此外，密封体7的线膨胀系数被调整为引线端子62的线膨胀系数与陶瓷基板2的线膨胀系数的中间的值。
另外，本实施方式2的功率用半导体装置1的引线端子62以使长边方向的两端部相比于中央部更远离陶瓷基板2的方式，弯曲成遍及包括与元件的接合部分的区域而向下变凸(形成弯曲部62c)。通过形成弯曲部62c，端部62e附近部分随着接近端部62e而远离陶瓷基板2以及功率用半导体元件3。即，关于引线端子62的向功率用半导体元件3或者陶瓷基板2的对置面中的在壳体8的内部被密封体7密封的部分的端部62e，形成以随着接近端部62e而远离功率用半导体元件3或者陶瓷基板2的方式倾斜的倾斜面62t。
由此，在本实施方式2的功率用半导体装置1中，也能够缓和破坏的起点集中产生于与端部62e的边界部分，作为结果，延长直至破坏为止的寿命。另外，能够适当地组合在实施方式1中说明的设置弯曲部62b的结构、使壁厚变化的结构以及在本实施方式2中说明的遍及包括与元件的接合部的区域而弯曲的结构。
此外，在本实施方式2中，示出在壳体8内灌封树脂来形成密封体7的例子，但不限于此。例如，也可以如实施方式1的变形例那样，不使用壳体而使用未图示的模具，通过传递模成型来形成密封体。
如以上那样，根据本实施方式2的功率用半导体装置1，即使构成为包括与功率用半导体元件3(的电极)接合的部分在内的、引线端子62的与陶瓷基板2对置的部分(弯曲部62c)弯曲，也能够容易地形成倾斜面62t。
此外，在上述各实施方式中，说明在功率用半导体元件3中，使用作为宽带隙半导体材料的SiC的例子，但当然也能够应用于一般的使用硅的元件。但是，在使用SiC还有氮化镓(GaN)系材料或者金刚石这样的带隙比硅宽的所谓宽带隙半导体材料、电流容许量高并且设想高温动作的情况下，起到特别显著的效果。这是由于引线端子62所需的厚度(剖面积)变厚，所以刚性变高，并且运行温度变高，所以由线膨胀系数差导致的位移变大。
因此，如上所述，通过在引线端子62处形成以随着接近端部62e而远离功率用半导体元件3或者陶瓷基板2的方式倾斜的倾斜面62t，能够缓和破坏的起点集中产生于与端部62e的边界部分，作为结果，能够进一步发挥能够延长直至破坏为止的寿命这样的效果。即，通过使用本发明的各实施方式的引线端子62的结构，能够得到有效利用宽带隙半导体的特性的高性能的功率用半导体装置1。

Claims (8)

1.一种功率用半导体装置，其特征在于，具备：
电路基板；
功率用半导体元件，在一面形成电极，另一面与所述电路基板接合；
引线端子，一端侧与所述电极接合，另一端侧与外部电连接；以及
密封体，对所述引线端子的与所述电极接合的部分以及所述功率用半导体元件进行密封，
在所述引线端子的所述一端侧的端部，形成随着接近所述端部而远离所述电路基板的倾斜面，
所述引线端子随着接近所述端部而壁厚变薄，以形成所述倾斜面。
2.根据权利要求1所述的功率用半导体装置，其特征在于，
所述引线端子在所述端部的附近弯曲，以形成所述倾斜面。
3.根据权利要求1或者2所述的功率用半导体装置，其特征在于，
所述引线端子的包括与所述电极接合的部分在内的、与所述电路基板对置的部分弯曲，以形成所述倾斜面。
4.根据权利要求1或者2所述的功率用半导体装置，其特征在于，
所述密封体的线膨胀系数是所述引线端子的线膨胀系数与所述电路基板的线膨胀系数的中间的值。
5.根据权利要求1或者2所述的功率用半导体装置，其特征在于，
所述电路基板的基体材料由陶瓷构成。
6.根据权利要求1或者2所述的功率用半导体装置，其特征在于，
所述引线端子由铜板构成。
7.根据权利要求1或者2所述的功率用半导体装置，其特征在于，
所述功率用半导体元件由宽带隙半导体材料形成。
8.根据权利要求7所述的功率用半导体装置，其特征在于，
所述宽带隙半导体材料是碳化硅、氮化镓系材料以及金刚石中的任意材料。
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