JP5494890B2 - 半導体集積回路装置および高周波モジュール - Google Patents

半導体集積回路装置および高周波モジュール Download PDF

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Publication number
JP5494890B2
JP5494890B2 JP2013516306A JP2013516306A JP5494890B2 JP 5494890 B2 JP5494890 B2 JP 5494890B2 JP 2013516306 A JP2013516306 A JP 2013516306A JP 2013516306 A JP2013516306 A JP 2013516306A JP 5494890 B2 JP5494890 B2 JP 5494890B2
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Japan
Prior art keywords
transistor
gate
transmission
reception
terminal
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JP2013516306A
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Japanese (ja)
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JPWO2012161032A1 (ja
Inventor
秋重 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Priority to JP2013516306A priority Critical patent/JP5494890B2/ja
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Publication of JP5494890B2 publication Critical patent/JP5494890B2/ja
Publication of JPWO2012161032A1 publication Critical patent/JPWO2012161032A1/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Electronic Switches (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Transceivers (AREA)
JP2013516306A 2011-05-20 2012-05-15 半導体集積回路装置および高周波モジュール Active JP5494890B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013516306A JP5494890B2 (ja) 2011-05-20 2012-05-15 半導体集積回路装置および高周波モジュール

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011113428 2011-05-20
JP2011113428 2011-05-20
PCT/JP2012/062420 WO2012161032A1 (ja) 2011-05-20 2012-05-15 半導体集積回路装置および高周波モジュール
JP2013516306A JP5494890B2 (ja) 2011-05-20 2012-05-15 半導体集積回路装置および高周波モジュール

Publications (2)

Publication Number Publication Date
JP5494890B2 true JP5494890B2 (ja) 2014-05-21
JPWO2012161032A1 JPWO2012161032A1 (ja) 2014-07-31

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ID=47217112

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JP2013516306A Active JP5494890B2 (ja) 2011-05-20 2012-05-15 半導体集積回路装置および高周波モジュール

Country Status (3)

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JP (1) JP5494890B2 (zh)
CN (1) CN103339858B (zh)
WO (1) WO2012161032A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107623494B (zh) * 2017-10-19 2021-06-22 中国电子科技集团公司第三十八研究所 一种应用于tr组件的cmos三端口放大器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007005970A (ja) * 2005-06-22 2007-01-11 Renesas Technology Corp 半導体回路装置および高周波電力増幅モジュール
JP2007129571A (ja) * 2005-11-04 2007-05-24 Matsushita Electric Ind Co Ltd 高周波スイッチ回路及び半導体装置
WO2008056747A1 (fr) * 2006-11-09 2008-05-15 Renesas Technology Corp. Circuit intégré semi-conducteur, module rf utilisant celui-ci et dispositif de terminal de communication radio utilisant celui-ci
JP2008205794A (ja) * 2007-02-20 2008-09-04 Renesas Technology Corp 半導体集積回路装置および高周波電力増幅モジュール

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1767406B (zh) * 2004-10-28 2010-06-16 Tdk株式会社 高频模块

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007005970A (ja) * 2005-06-22 2007-01-11 Renesas Technology Corp 半導体回路装置および高周波電力増幅モジュール
JP2007129571A (ja) * 2005-11-04 2007-05-24 Matsushita Electric Ind Co Ltd 高周波スイッチ回路及び半導体装置
WO2008056747A1 (fr) * 2006-11-09 2008-05-15 Renesas Technology Corp. Circuit intégré semi-conducteur, module rf utilisant celui-ci et dispositif de terminal de communication radio utilisant celui-ci
JP2008205794A (ja) * 2007-02-20 2008-09-04 Renesas Technology Corp 半導体集積回路装置および高周波電力増幅モジュール

Also Published As

Publication number Publication date
WO2012161032A1 (ja) 2012-11-29
CN103339858B (zh) 2016-04-06
JPWO2012161032A1 (ja) 2014-07-31
CN103339858A (zh) 2013-10-02

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