JP5492518B2 - 半導体駆動回路、及びそれを用いた半導体装置 - Google Patents
半導体駆動回路、及びそれを用いた半導体装置 Download PDFInfo
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- JP5492518B2 JP5492518B2 JP2009230133A JP2009230133A JP5492518B2 JP 5492518 B2 JP5492518 B2 JP 5492518B2 JP 2009230133 A JP2009230133 A JP 2009230133A JP 2009230133 A JP2009230133 A JP 2009230133A JP 5492518 B2 JP5492518 B2 JP 5492518B2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Description
前記ゲート駆動回路が前記半導体スイッチング素子をオンするときのゲート端子とソース端子間の電圧を2.5Vから3.5Vの間に制御することを特徴とするものである。
前記ゲート抵抗と並列に第1のコンデンサを接続し、前記第1のコンデンサが前記半導体スイッチング素子の入力容量より、大きいことを特徴するものである。
2 フリーホイールダイオード
3 ゲート駆動回路
4 ドレイン端子
5a ソース端子1
5b ソース端子2
6 ゲート端子
7 帰還容量
8 入力容量
9 寄生ダイオード
11a,11b ゲート抵抗
12 ゲート電源
13,16a,16b ダイオード
14 ツェナーダイオード
15a,15b,17 コンデンサ
18 ソース配線インダクタンス
21 パッケージ
22 実装基板
23 ソース電極
24 ゲート電極
25 主回路用ソース配線
26 ゲート駆動回路用ソース配線2
27 ゲート配線
28 ダイオード配線
Claims (4)
- ドレイン端子とソース端子とゲート端子とを有す半導体スイッチング素子と、該半導体スイッチング素子のソース端子とゲート端子の電圧を制御するゲート駆動回路とを備えた半導体駆動回路と、
ゲート駆動回路用電源と主回路電源と負荷端子と前記半導体スイッチング素子とを実装した基板と前記基板のパッケージと
を備えた半導体装置であって、
前記ゲート駆動回路が前記半導体スイッチング素子をオンするときのゲート端子とソース端子との間の電圧を2.5Vから3.5Vの間に制御し、
前記ゲート駆動回路内に前記半導体スイッチング素子のターンオンおよびターンオフの速度を調整するためのゲート抵抗を備え、
前記ゲート抵抗と並列に第1のコンデンサが接続され、
前記第1のコンデンサが前記半導体スイッチング素子の入力容量より大きく、
前記半導体スイッチング素子のソース電極に第一のソース配線と第二のソース配線が接続され、
前記第一のソース配線は前記ゲート駆動回路用電源の負端子に接続され、
前記第二のソース配線は前記主回路電源の負端子、あるいは負荷端子に接続される
ことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記ゲート抵抗と前記第一のコンデンサを前記半導体スイッチング素子のオン時とオフ時で大きさを変える
ことを特徴とする半導体装置。 - 請求項1または2に記載の半導体装置において、
前記ソース端子と前記ゲート端子との間に第2のコンデンサを設ける
ことを特徴とする半導体装置。 - 請求項1ないし3の何れかに記載の半導体装置において、
前記半導体スイッチング素子が炭化珪素や窒化ガリウムあるいはダイヤモンドのようなワイドギャップ半導体を用いたノーマリオフの接合型FETである
ことを特徴とする半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009230133A JP5492518B2 (ja) | 2009-10-02 | 2009-10-02 | 半導体駆動回路、及びそれを用いた半導体装置 |
EP20100251679 EP2306647B1 (en) | 2009-10-02 | 2010-09-29 | Drive circuit for switching device |
US12/893,356 US8395422B2 (en) | 2009-10-02 | 2010-09-29 | Drive circuit for switching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009230133A JP5492518B2 (ja) | 2009-10-02 | 2009-10-02 | 半導体駆動回路、及びそれを用いた半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011077462A JP2011077462A (ja) | 2011-04-14 |
JP5492518B2 true JP5492518B2 (ja) | 2014-05-14 |
Family
ID=43446667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009230133A Expired - Fee Related JP5492518B2 (ja) | 2009-10-02 | 2009-10-02 | 半導体駆動回路、及びそれを用いた半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8395422B2 (ja) |
EP (1) | EP2306647B1 (ja) |
JP (1) | JP5492518B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10263538B2 (en) | 2016-07-12 | 2019-04-16 | Kabushiki Kaisha Toshiba | Semiconductor device and power conversion device |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101571952B1 (ko) * | 2011-05-12 | 2015-11-25 | 닛산 지도우샤 가부시키가이샤 | 스위칭 회로 및 반도체 모듈 |
US8618846B2 (en) * | 2011-09-13 | 2013-12-31 | Daesung Electric Co., Ltd. | Solid-state switch driving circuit for vehicle |
WO2013046420A1 (ja) | 2011-09-30 | 2013-04-04 | 株式会社日立製作所 | 半導体駆動回路およびそれを用いた電力変換装置 |
JP5832845B2 (ja) * | 2011-10-12 | 2015-12-16 | 株式会社日立製作所 | 半導体モジュール及び電力変換モジュール |
JP5811800B2 (ja) * | 2011-11-18 | 2015-11-11 | 富士通株式会社 | 制御回路及び電子機器 |
CN104040890B (zh) * | 2012-01-05 | 2017-06-06 | 施耐德电气It公司 | 用于控制半导体开关器件的装置 |
FR2988931B1 (fr) * | 2012-03-30 | 2015-10-16 | Schneider Toshiba Inverter | Dispositif de commande employe dans un systeme d'alimentation electrique a decoupage |
CN105453434A (zh) * | 2013-04-17 | 2016-03-30 | 奥的斯电梯公司 | 采用氮化镓开关的驱动单元 |
US9762119B2 (en) * | 2015-03-27 | 2017-09-12 | Samsung Electronics Co., Ltd. | Switch driving circuit, and power factor correction circuit having the same |
DE102015104990B4 (de) * | 2015-03-31 | 2020-06-04 | Infineon Technologies Austria Ag | Verbindungshalbleitervorrichtung mit einem Abtastlead |
WO2016181597A1 (ja) | 2015-05-13 | 2016-11-17 | パナソニックIpマネジメント株式会社 | 駆動回路、スイッチング制御回路およびスイッチング装置 |
US9548729B2 (en) | 2015-06-16 | 2017-01-17 | Cypress Semiconductor Corporation | Switching circuit |
WO2017081856A1 (ja) * | 2015-11-09 | 2017-05-18 | パナソニックIpマネジメント株式会社 | スイッチング回路 |
JP6597357B2 (ja) * | 2016-02-09 | 2019-10-30 | 三菱電機株式会社 | 保護ダイオード付き電界効果トランジスタ |
TWI607298B (zh) * | 2016-04-28 | 2017-12-01 | Hestia Power Inc | Adjustable voltage level wide bandgap semiconductor device |
US10826484B2 (en) * | 2016-07-06 | 2020-11-03 | Delta Electronics, Inc. | Waveform conversion circuit for gate driver |
US10826479B2 (en) * | 2016-07-06 | 2020-11-03 | Delta Electronics, Inc. | Waveform conversion circuit for gate driver |
JP6370524B1 (ja) * | 2017-05-24 | 2018-08-08 | 三菱電機株式会社 | ゲート駆動回路 |
WO2018216251A1 (ja) * | 2017-05-24 | 2018-11-29 | 三菱電機株式会社 | ゲート駆動回路 |
CN111052577B (zh) * | 2017-08-30 | 2023-07-25 | 株式会社日立制作所 | 电力转换装置以及电力转换方法 |
JP2019097225A (ja) * | 2017-11-17 | 2019-06-20 | シャープ株式会社 | 電源回路 |
CN114785094A (zh) * | 2018-01-05 | 2022-07-22 | 台达电子工业股份有限公司 | 波形转换电路以及栅极驱动电路 |
JP6985600B2 (ja) * | 2018-01-25 | 2021-12-22 | 富士通株式会社 | 波形成形回路、半導体装置及びスイッチング電源装置 |
WO2019159655A1 (ja) * | 2018-02-19 | 2019-08-22 | シャープ株式会社 | 整流回路および電源装置 |
WO2019171509A1 (ja) * | 2018-03-07 | 2019-09-12 | 日産自動車株式会社 | スイッチング装置及びスイッチング装置の制御方法 |
CN110768649B (zh) * | 2018-07-26 | 2023-03-24 | 台达电子工业股份有限公司 | 功率半导体开关的门极电路及门极驱动电路 |
CN109067228A (zh) * | 2018-08-06 | 2018-12-21 | 西北工业大学 | 一种基于氮化镓功率器件的驱动器及印刷电路布局 |
JP7063233B2 (ja) * | 2018-10-26 | 2022-05-09 | オムロン株式会社 | スイッチング素子の駆動回路及びスイッチング回路 |
CN112468119B (zh) * | 2019-09-06 | 2022-08-23 | 深圳芯能半导体技术有限公司 | P型氮化镓器件的驱动装置 |
US11063589B1 (en) * | 2020-04-27 | 2021-07-13 | GaN Force Corporation | Power circuit facilitating the operation of a high electron mobility transistor |
TWI752794B (zh) * | 2021-01-12 | 2022-01-11 | 宏汭精測科技股份有限公司 | 可調電位之閘極驅動電路及裝置 |
TWI752793B (zh) * | 2021-01-12 | 2022-01-11 | 宏汭精測科技股份有限公司 | 部分脈衝電位可調之閘極驅動電路及裝置 |
WO2022180924A1 (ja) * | 2021-02-26 | 2022-09-01 | パナソニックIpマネジメント株式会社 | スイッチング制御回路およびゲート駆動回路 |
CN113098240B (zh) * | 2021-03-31 | 2024-01-16 | 西北工业大学 | 一种Cascode型GaN功率器件的驱动电路 |
EP4280462A1 (en) * | 2022-05-17 | 2023-11-22 | Airbus SAS | Improved power component for electric or hybrid aircraft |
EP4333305A1 (en) * | 2022-08-31 | 2024-03-06 | Nexperia B.V. | A voltage gate driver for a semiconductor-based transistor, as well as a power switch device, and a corresponding method |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2910859B2 (ja) * | 1989-09-29 | 1999-06-23 | 株式会社東芝 | 半導体素子の駆動回路 |
US5001373A (en) | 1990-01-09 | 1991-03-19 | Ford Motor Company | Active clamp circuit with immunity to zener diode microplasmic noise |
US5079608A (en) * | 1990-11-06 | 1992-01-07 | Harris Corporation | Power MOSFET transistor circuit with active clamp |
JP2796209B2 (ja) | 1992-01-17 | 1998-09-10 | 株式会社日立製作所 | 内燃機関用電子配電点火装置 |
DE4237489A1 (de) * | 1992-11-06 | 1994-05-11 | Bosch Gmbh Robert | Schaltung zum Schutz eines MOSFET-Leistungstransistors |
US5434527A (en) * | 1993-10-25 | 1995-07-18 | Caterpillar Inc. | Gate drive circuit |
JP3222330B2 (ja) * | 1994-09-20 | 2001-10-29 | 株式会社日立製作所 | 半導体回路及び半導体集積回路 |
JP3255147B2 (ja) * | 1998-06-19 | 2002-02-12 | 株式会社デンソー | 絶縁ゲート型トランジスタのサージ保護回路 |
JP3787037B2 (ja) | 1999-02-22 | 2006-06-21 | 株式会社東芝 | 半導体モジュール |
JP2002246551A (ja) * | 2001-02-15 | 2002-08-30 | Hitachi Ltd | 半導体装置 |
DE10149777A1 (de) * | 2001-10-09 | 2003-04-24 | Bosch Gmbh Robert | Halbleiter-Schaltungsanordnung, insbesondere für Zündungsverwendungen, und Verwendung |
JP3788926B2 (ja) * | 2001-10-19 | 2006-06-21 | 三菱電機株式会社 | 半導体装置及びトランジスタの駆動方法 |
JP2004014547A (ja) | 2002-06-03 | 2004-01-15 | Toshiba Corp | 半導体装置及び容量調節回路 |
US7202528B2 (en) * | 2004-12-01 | 2007-04-10 | Semisouth Laboratories, Inc. | Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making |
WO2006097896A1 (en) * | 2005-03-15 | 2006-09-21 | Nxp B.V. | Mosfet with temperature sense facility |
JP2007215389A (ja) | 2006-01-12 | 2007-08-23 | Hitachi Ltd | パワー半導体素子とこれを用いた半導体回路 |
US7782118B2 (en) * | 2007-04-30 | 2010-08-24 | Northrop Grumman Systems Corporation | Gate drive for wide bandgap semiconductor device |
JP4333802B1 (ja) * | 2008-03-18 | 2009-09-16 | トヨタ自動車株式会社 | インバータの駆動装置 |
JP5844956B2 (ja) * | 2009-03-05 | 2016-01-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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2009
- 2009-10-02 JP JP2009230133A patent/JP5492518B2/ja not_active Expired - Fee Related
-
2010
- 2010-09-29 US US12/893,356 patent/US8395422B2/en not_active Expired - Fee Related
- 2010-09-29 EP EP20100251679 patent/EP2306647B1/en not_active Not-in-force
Cited By (1)
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US10263538B2 (en) | 2016-07-12 | 2019-04-16 | Kabushiki Kaisha Toshiba | Semiconductor device and power conversion device |
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EP2306647B1 (en) | 2014-06-04 |
JP2011077462A (ja) | 2011-04-14 |
EP2306647A3 (en) | 2011-08-10 |
EP2306647A2 (en) | 2011-04-06 |
US20110080192A1 (en) | 2011-04-07 |
US8395422B2 (en) | 2013-03-12 |
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