JP5336102B2 - Tft基板 - Google Patents
Tft基板 Download PDFInfo
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- JP5336102B2 JP5336102B2 JP2008097251A JP2008097251A JP5336102B2 JP 5336102 B2 JP5336102 B2 JP 5336102B2 JP 2008097251 A JP2008097251 A JP 2008097251A JP 2008097251 A JP2008097251 A JP 2008097251A JP 5336102 B2 JP5336102 B2 JP 5336102B2
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- 239000000758 substrate Substances 0.000 title claims abstract description 160
- 229910052751 metal Inorganic materials 0.000 claims abstract description 147
- 239000002184 metal Substances 0.000 claims abstract description 147
- 229910000838 Al alloy Inorganic materials 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 622
- 238000002161 passivation Methods 0.000 description 128
- 239000010410 layer Substances 0.000 description 100
- 238000000034 method Methods 0.000 description 70
- 238000004519 manufacturing process Methods 0.000 description 54
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- 230000015572 biosynthetic process Effects 0.000 description 39
- 230000002093 peripheral effect Effects 0.000 description 37
- 238000005520 cutting process Methods 0.000 description 34
- 239000004973 liquid crystal related substance Substances 0.000 description 28
- 239000004065 semiconductor Substances 0.000 description 26
- 239000010409 thin film Substances 0.000 description 22
- 238000000206 photolithography Methods 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 16
- 238000005530 etching Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 238000001312 dry etching Methods 0.000 description 10
- 239000002356 single layer Substances 0.000 description 10
- 238000001039 wet etching Methods 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 238000004380 ashing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
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- 238000000137 annealing Methods 0.000 description 5
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133504—Diffusing, scattering, diffracting elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
- G02F1/133555—Transflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
まず、TFT基板が用いられる表示装置について説明する。表示装置としては、液晶表示装置やEL表示装置(電界発光型表示装置)等の平面型表示装置(フラットパネルディスプレイ)が挙げられる。また、EL表示装置には、例えば有機EL表示装置、無機EL表示装置がある。ここでは、表示装置の一例として、液晶表示装置について説明する。
本実施の形態は、フリンジフィールド(FFS)駆動の液晶表示装置に用いられるTFTアレイ基板1について説明する。具体的には、共通配線12及び透過電極11の形状が実施の形態1と異なる。本実施の形態の下部画素電極35は、実施の形態1の共通配線12に相当する。なお、ゲート配線端子28、ソース配線端子29、及びショートリング配線27等、それ以外の構成、製造工程等は、実施の形態1と同様である。すなわち、本実施の形態でも、図1、図3、及び4に示される構成と同様の構成を有する。そして、本実施の形態でも、図6〜図16の(b)、(c)に示される製造工程によりTFTアレイ基板1が製造される。このため、実施の形態1と共通する説明は省略又は簡略化する。
本実施の形態は、半透過型の液晶表示装置に用いられるTFTアレイ基板1について説明する。具体的には、共通配線12及び画素電極の構成が実施の形態1と異なる。なお、それ以外の基本的な構成、製造工程等は、実施の形態1と同様である。また、本実施の形態でも、TFTアレイ基板1は、図1に示される構成と同様の構成を有する。このため、実施の形態1と共通する説明は省略又は簡略化する。
上記の実施の形態では、表示装置に用いるTFTアレイ基板1について説明したが、本実施の形態では、センシング装置に用いるTFTアレイ基板1について説明する。また、本実施の形態でも、TFTアレイ基板1は、図1に示される構成と略同様の構成を有する。このため、上記の実施の形態と共通する説明は省略又は簡略化する。まず、図31、32を参照して、本実施の形態にかかるTFTアレイ基板1の画素の構成について説明する。図31は、TFTアレイ基板1の画素の構成を示す平面図である。図32は、図31のA−A断面図である。
4 チャネル、5 ソース配線、6 ゲート配線、7 ゲート電極、8 ソース電極、
9 ドレイン電極、10 反射電極、11 透過電極、12 共通配線、
13 コンタクトホール、14 半導体層、15 ゲート絶縁膜、
16 オーミックコンタクト層、17 パッシベーション膜、18 平坦化膜、
19 配向膜、20 液晶、21 対向電極、22 オーバーコート、23 色材、
24 BM、25 絶縁性基板、27 ショートリング配線、28 ゲート配線端子、
29 ソース配線端子、30 レジスト、31 上層金属除去部、
32 配線コンタクトホール、33 接続電極、34 パネル切断ライン、
35 下部画素電極、36 カラーフィルタ基板、37 データ配線、
38 バイアス配線、39 n+a−Si膜、40 i−Si膜、
41 p+a−Si膜、42 透明電極、43 第2パッシベーション膜、
44 遮光層、45 第3パッシベーション膜、46 第4パッシベーション膜、
47 フォトダイオード下部電極、48 データ配線端子、49 透明導電膜、
50 反射膜、51 除去領域、52 表示領域、53 額縁領域、54 画素、
100 フォトダイオード
Claims (5)
- 外部から接続可能な端子及び前記端子から延在する第1配線を構成する透明導電膜パターンと、
前記端子上では除去され、前記透明導電膜パターン上において前記透明導電膜パターンの内側に形成された金属膜と、
前記金属膜を覆う絶縁膜と、
複数の画素と、
前記透明導電膜パターンによって、前記複数の画素に亘って形成された共通配線とを備え、
前記端子は、外部との接続端子であり、
前記共通配線は、前記透明導電膜パターンと当該透明導電膜パターンの内側に形成された前記金属膜の積層構造により構成する第1領域と、前記透明導電膜パターンにより構成する第2領域とを含み、
前記第1領域は、隣接する前記画素間、又は隣接する前記画素間と当該画素間から延在される前記画素内の端部近傍であり、
前記第2領域は、前記画素内の前記第1領域を除く領域であり、
前記第2領域は幅広とし、前記第1領域は前記第2領域に比して幅狭とするTFT基板。 - 反射領域と透過領域とを有するTFT基板であって、
前記絶縁膜上に形成され、反射領域及び透過領域を有する画素電極をさらに備え、
前記画素電極は、前記反射領域及び前記透過領域に形成された透過電極と、前記透過領域より外側において、前記反射領域の前記透過電極上に形成された反射電極とを備える請求項1に記載のTFT基板。 - 前記端子から基板端まで形成され、前記透明導電膜パターンと、前記基板端より内側において前記透明導電膜パターンの上層に形成された金属膜とを有する第2配線をさらに備える請求項1又は2に記載のTFT基板。
- 前記金属膜は、Al合金よりなる膜を含む請求項1乃至3のいずれか1項に記載のTFT基板。
- 前記第1配線上において、前記絶縁膜に形成されたコンタクトホールと、
前記絶縁膜上に形成された第3配線と、
前記コンタクトホールに充填され、前記第1配線と前記第3配線とを電気的に接続する接続電極とをさらに備え、
前記第1配線の前記金属膜は、前記コンタクトホールでは除去されている請求項1乃至4のいずれか1項に記載のTFT基板。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008097251A JP5336102B2 (ja) | 2008-04-03 | 2008-04-03 | Tft基板 |
US12/417,134 US8351005B2 (en) | 2008-04-03 | 2009-04-02 | TFT substrate having multiple pixels, liquid crystal display device using the TFT substrate, and method for manufacturing the TFT substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2008097251A JP5336102B2 (ja) | 2008-04-03 | 2008-04-03 | Tft基板 |
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JP2009251174A JP2009251174A (ja) | 2009-10-29 |
JP5336102B2 true JP5336102B2 (ja) | 2013-11-06 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008097251A Active JP5336102B2 (ja) | 2008-04-03 | 2008-04-03 | Tft基板 |
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US (1) | US8351005B2 (ja) |
JP (1) | JP5336102B2 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4743269B2 (ja) * | 2008-04-23 | 2011-08-10 | エプソンイメージングデバイス株式会社 | 固体撮像装置 |
EP2629590A1 (en) * | 2008-06-17 | 2013-08-21 | Hitachi Ltd. | An organic light-emitting device |
JP2009267343A (ja) * | 2008-10-29 | 2009-11-12 | Epson Imaging Devices Corp | 固体撮像装置およびその製造方法 |
KR101562266B1 (ko) * | 2009-12-11 | 2015-10-21 | 엘지디스플레이 주식회사 | 액정표시장치 |
WO2011074336A1 (ja) * | 2009-12-17 | 2011-06-23 | シャープ株式会社 | アクティブマトリクス基板、及び製造方法 |
KR101065323B1 (ko) * | 2010-05-24 | 2011-09-16 | 삼성모바일디스플레이주식회사 | 액정 표시 장치 |
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