JP5274327B2 - 有機電界発光表示装置及びその製造方法 - Google Patents
有機電界発光表示装置及びその製造方法 Download PDFInfo
- Publication number
- JP5274327B2 JP5274327B2 JP2009070440A JP2009070440A JP5274327B2 JP 5274327 B2 JP5274327 B2 JP 5274327B2 JP 2009070440 A JP2009070440 A JP 2009070440A JP 2009070440 A JP2009070440 A JP 2009070440A JP 5274327 B2 JP5274327 B2 JP 5274327B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- semiconductor layer
- layer
- organic light
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 86
- 239000010409 thin film Substances 0.000 claims abstract description 69
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 230000004913 activation Effects 0.000 abstract 2
- 239000011787 zinc oxide Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 6
- 229910007717 ZnSnO Inorganic materials 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000008186 active pharmaceutical agent Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910005265 GaInZnO Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Shift Register Type Memory (AREA)
Description
110、120 薄膜トランジスタ
130 有機電界発光ダイオード
140 画素領域
146 画素部
150 非画素領域
160 走査駆動部
170 データ駆動部
180 パッド
200 封止基板
300 密封材
Claims (14)
- 第1領域及び第2領域を含む基板と、
前記第1領域の基板上に形成されたゲート電極、ゲート絶縁層により前記ゲート電極と絶縁され、かつ、第1酸化物半導体層及び第2酸化物半導体層の積層構造からなる活性層、及び前記活性層に接続されたソース及びドレイン電極を備え、かつ、前記第1酸化物半導体層のキャリア濃度が前記第2酸化物半導体層より高い第1薄膜トランジスタと、
前記第2領域の基板上に形成されたゲート電極、ゲート絶縁層により前記ゲート電極と絶縁され、かつ、前記第2酸化物半導体層からなる活性層、及び前記活性層に接続されたソース及びドレイン電極を備える第2薄膜トランジスタと、
前記第2薄膜トランジスタを含む上部に形成され、かつ、前記第2薄膜トランジスタのソースまたはドレイン電極が露出するように、ビアホールが形成された絶縁層と、
前記第2領域の前記絶縁層上に形成され、かつ、前記ビアホールを介して前記第2薄膜トランジスタのソースまたはドレイン電極に接続された第1電極、前記第1電極上に形成された有機発光層、及び前記有機発光層上に形成された第2電極を備える有機電界発光ダイオードと、
を備え、
前記第2酸化物半導体層に、ガリウム(Ga)、インジウム(In)、スズ(Sn)、ジルコニウム(Zr)、ハフニウム(Hf)、カドミウム(Cd)、銀(Ag)、銅(Cu)、ゲルマニウム(Ge)、ガドリニウム(Gd)、及びバナジウム(V)のうち少なくとも1つのイオンがドープされ、
前記第1酸化物半導体層のキャリア濃度は、1e+19〜1e+21#/cm 3 であり、前記第2酸化物半導体層のキャリア濃度は、1e+13〜1e+18#/cm 3 であることを特徴とする有機電界発光表示装置。 - 前記第1領域は、駆動部であることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記第1酸化物半導体層は、前記第2酸化物半導体層と前記ゲート絶縁層との間に形成されることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記第1酸化物半導体層は、ITO、InZnO、InSnO、AlZnO、AlGaO、及びInGaOからなる群から選択されることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記第1酸化物半導体層は、前記第2酸化物半導体層より薄く形成されることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記第1酸化物半導体層は、1〜5nmの厚さに形成されることを特徴とする請求項5に記載の有機電界発光表示装置。
- 前記第2酸化物半導体層は、酸化亜鉛(ZnO)を含むことを特徴とする請求項1に記載の有機電界発光表示装置。
- 第1領域及び第2領域を含む基板を準備するステップと、
前記第1及び第2領域の基板上に第1及び第2薄膜トランジスタのゲート電極をそれぞれ形成するステップと、
前記第1及び第2領域の前記ゲート電極を含む上部にゲート絶縁層を形成するステップと、
前記第1領域の前記ゲート絶縁層上に、第1酸化物半導体層及び第2酸化物半導体層の積層構造からなり、かつ、前記第1酸化物半導体層のキャリア濃度が1e+19〜1e+21#/cm 3 であり、前記第2酸化物半導体層のキャリア濃度が1e+13〜1e+18#/cm 3 である活性層を形成し、かつ、前記第2領域の前記ゲート絶縁層上に、前記第2酸化物半導体層で活性層を形成するステップと、
前記第1及び第2領域の前記活性層に接続されるように、ソース及びドレイン電極をそれぞれ形成するステップと、
前記第2薄膜トランジスタを含む上部に絶縁層を形成した後、前記第2薄膜トランジスタのソースまたはドレイン電極が露出するように、ビアホールを形成するステップと、
前記第2領域の前記絶縁層上に、前記ビアホールを介して前記第2薄膜トランジスタのソースまたはドレイン電極に接続された第1電極、前記第1電極上に形成された有機発光層、及び前記有機発光層上に形成された第2電極を備える有機電界発光ダイオードを形成するステップと、
を含み、
前記第2酸化物半導体層に、ガリウム(Ga)、インジウム(In)、スズ(Sn)、ジルコニウム(Zr)、ハフニウム(Hf)、カドミウム(Cd)、銀(Ag)、銅(Cu)、ゲルマニウム(Ge)、ガドリニウム(Gd)、及びバナジウム(V)のうち少なくとも1つのイオンがドープされることを特徴とする有機電界発光表示装置の製造方法。 - 前記第1領域は、駆動部であることを特徴とする請求項8に記載の有機電界発光表示装置の製造方法。
- 前記第1酸化物半導体層は、InZnO、InSnO、AlZnO、AlGaO、及びInGaOからなる群から選択された少なくとも1つの物質で形成されることを特徴とする請求項8に記載の有機電界発光表示装置の製造方法。
- 前記第1酸化物半導体層は、前記第2酸化物半導体層より薄く形成されることを特徴とする請求項8に記載の有機電界発光表示装置の製造方法。
- 前記第1酸化物半導体層は、1〜5nmの厚さに形成されることを特徴とする請求項11に記載の有機電界発光表示装置の製造方法。
- 前記第2酸化物半導体層は、酸化亜鉛(ZnO)を含むことを特徴とする請求項8に記載の有機電界発光表示装置の製造方法。
- 前記活性層を形成するステップは、
前記第1及び第2領域の前記ゲート絶縁層上に前記第1酸化物半導体層を形成するステップと、
前記第1酸化物半導体層をパターニングするステップと、
前記第1酸化物半導体層を含む前記第1及び第2領域に前記第2酸化物半導体層を形成するステップと、
前記第1及び第2領域の前記第2酸化物半導体層をパターニングするステップと、
を含むことを特徴とする請求項8に記載の有機電界発光表示装置の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090002242A KR101034686B1 (ko) | 2009-01-12 | 2009-01-12 | 유기전계발광 표시 장치 및 그의 제조 방법 |
KR10-2009-0002242 | 2009-01-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010161327A JP2010161327A (ja) | 2010-07-22 |
JP5274327B2 true JP5274327B2 (ja) | 2013-08-28 |
Family
ID=42124279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009070440A Active JP5274327B2 (ja) | 2009-01-12 | 2009-03-23 | 有機電界発光表示装置及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8436342B2 (ja) |
EP (1) | EP2207206B1 (ja) |
JP (1) | JP5274327B2 (ja) |
KR (1) | KR101034686B1 (ja) |
CN (1) | CN101794809B (ja) |
AT (1) | ATE523898T1 (ja) |
TW (1) | TWI423436B (ja) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8367486B2 (en) * | 2009-02-05 | 2013-02-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the transistor |
KR101671210B1 (ko) | 2009-03-06 | 2016-11-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
WO2011013523A1 (en) * | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR101041144B1 (ko) * | 2009-08-13 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치 |
WO2011034012A1 (en) * | 2009-09-16 | 2011-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit, light emitting device, semiconductor device, and electronic device |
KR101730347B1 (ko) | 2009-09-16 | 2017-04-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
CN102668028B (zh) | 2009-11-28 | 2015-09-02 | 株式会社半导体能源研究所 | 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法 |
KR20190100462A (ko) | 2009-11-28 | 2019-08-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
WO2011065210A1 (en) | 2009-11-28 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device |
WO2011074407A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR101791829B1 (ko) | 2010-01-20 | 2017-10-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 휴대 전자 기기 |
KR102217907B1 (ko) | 2010-01-20 | 2021-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
WO2011108346A1 (en) * | 2010-03-05 | 2011-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of oxide semiconductor film and manufacturing method of transistor |
KR101050466B1 (ko) | 2010-03-12 | 2011-07-20 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치의 커패시터 및 그것을 구비한 유기 발광 표시 장치 |
US8884282B2 (en) * | 2010-04-02 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101101109B1 (ko) | 2010-06-01 | 2012-01-03 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 |
JP2012256819A (ja) * | 2010-09-08 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2012256821A (ja) * | 2010-09-13 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
KR20120042029A (ko) * | 2010-10-22 | 2012-05-03 | 삼성모바일디스플레이주식회사 | 표시 장치 및 그 제조 방법 |
TWI562379B (en) | 2010-11-30 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing semiconductor device |
JP5723262B2 (ja) * | 2010-12-02 | 2015-05-27 | 株式会社神戸製鋼所 | 薄膜トランジスタおよびスパッタリングターゲット |
KR102181898B1 (ko) | 2010-12-17 | 2020-11-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 재료 및 반도체 장치 |
TWI401797B (zh) * | 2010-12-28 | 2013-07-11 | Ind Tech Res Inst | 主動元件陣列以及有機發光二極體畫素陣列的製作方法 |
US8952377B2 (en) | 2011-07-08 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2013021632A1 (ja) * | 2011-08-11 | 2013-02-14 | 出光興産株式会社 | 薄膜トランジスタ |
CN102769039A (zh) * | 2012-01-13 | 2012-11-07 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制造方法、阵列基板和显示器件 |
KR101942980B1 (ko) | 2012-01-17 | 2019-01-29 | 삼성디스플레이 주식회사 | 반도체 디바이스 및 그 형성 방법 |
KR101372734B1 (ko) * | 2012-02-15 | 2014-03-13 | 연세대학교 산학협력단 | 액상공정을 이용한 박막 트랜지스터 및 그 제조방법 |
KR101950834B1 (ko) * | 2012-03-06 | 2019-02-21 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터 및 이의 제조 방법 |
US9219164B2 (en) * | 2012-04-20 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide semiconductor channel |
CN102637742A (zh) * | 2012-04-26 | 2012-08-15 | 北京大学 | 一种氧化物半导体薄膜晶体管及其制备方法 |
US9048323B2 (en) | 2012-04-30 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102380379B1 (ko) | 2012-05-10 | 2022-04-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101406838B1 (ko) | 2012-05-14 | 2014-06-16 | 연세대학교 산학협력단 | 산화물 반도체 장치 및 그 형성 방법 |
CN107591316B (zh) | 2012-05-31 | 2021-06-08 | 株式会社半导体能源研究所 | 半导体装置 |
US9153699B2 (en) | 2012-06-15 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
KR102161077B1 (ko) * | 2012-06-29 | 2020-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP6134598B2 (ja) | 2012-08-02 | 2017-05-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9356156B2 (en) * | 2013-05-24 | 2016-05-31 | Cbrite Inc. | Stable high mobility MOTFT and fabrication at low temperature |
KR102162794B1 (ko) | 2013-05-30 | 2020-10-08 | 삼성디스플레이 주식회사 | 평판표시장치용 백플레인 및 그의 제조 방법 |
KR102101398B1 (ko) * | 2013-06-13 | 2020-04-16 | 엘지디스플레이 주식회사 | 산화물 반도체 박막 트랜지스터와 디스플레이 장치 및 그들의 제조방법 |
KR20150004091A (ko) | 2013-07-02 | 2015-01-12 | 삼성디스플레이 주식회사 | 유기전계발광 표시장치 및 그의 제조방법 |
US9818765B2 (en) | 2013-08-26 | 2017-11-14 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
US9564478B2 (en) | 2013-08-26 | 2017-02-07 | Apple Inc. | Liquid crystal displays with oxide-based thin-film transistors |
CN110265482B (zh) * | 2013-12-02 | 2023-08-08 | 株式会社半导体能源研究所 | 显示装置 |
US9349751B2 (en) | 2013-12-12 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9397149B2 (en) * | 2013-12-27 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI685116B (zh) * | 2014-02-07 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
TWI772799B (zh) * | 2014-05-09 | 2022-08-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
KR102157689B1 (ko) * | 2014-06-27 | 2020-09-21 | 엘지디스플레이 주식회사 | 평판 표시장치용 박막 트랜지스터 어레이 기판 |
KR102308621B1 (ko) * | 2014-07-15 | 2021-10-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
US10269832B2 (en) * | 2014-10-10 | 2019-04-23 | Joled Inc. | Thin film transistor substrate, method for manufacturing thin film transistor substrate, and display panel |
KR102423678B1 (ko) * | 2015-09-25 | 2022-07-21 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
US9818344B2 (en) | 2015-12-04 | 2017-11-14 | Apple Inc. | Display with light-emitting diodes |
JP2017143135A (ja) * | 2016-02-09 | 2017-08-17 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ |
CN106057826A (zh) * | 2016-08-08 | 2016-10-26 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
CN106449667B (zh) * | 2016-12-21 | 2017-12-22 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN110383493B (zh) * | 2017-03-09 | 2023-06-02 | 夏普株式会社 | 有源矩阵基板及其制造方法 |
JP2018195632A (ja) * | 2017-05-15 | 2018-12-06 | 株式会社ジャパンディスプレイ | 半導体装置および表示装置 |
JP7079548B2 (ja) * | 2017-09-29 | 2022-06-02 | 京東方科技集團股▲ふん▼有限公司 | アレイ基板、表示装置およびアレイ基板の製造方法 |
KR102585853B1 (ko) * | 2017-10-12 | 2023-10-06 | 엘지디스플레이 주식회사 | 표시 장치용 기판과 그를 포함하는 표시 장치 |
KR102604006B1 (ko) * | 2018-08-14 | 2023-11-21 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 그 제조 방법 |
CN110010626B (zh) * | 2019-04-11 | 2022-04-29 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
CN110164875A (zh) * | 2019-06-06 | 2019-08-23 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板、显示装置 |
KR20210010696A (ko) * | 2019-07-17 | 2021-01-28 | 삼성디스플레이 주식회사 | 표시 장치 |
CN110739316A (zh) * | 2019-10-29 | 2020-01-31 | 合肥维信诺科技有限公司 | 阵列基板、显示面板及阵列基板的制作方法 |
US20210193049A1 (en) * | 2019-12-23 | 2021-06-24 | Apple Inc. | Electronic Display with In-Pixel Compensation and Oxide Drive Transistors |
US11624126B2 (en) | 2020-06-16 | 2023-04-11 | Ohio State Innovation Foundation | Deposition of single phase beta-(AlxGa1-x)2O3 thin films with 0.28< =x<=0.7 on beta Ga2O3(100) or (−201) substrates by chemical vapor deposition |
WO2022061523A1 (zh) * | 2020-09-22 | 2022-03-31 | 京东方科技集团股份有限公司 | 阵列基板、显示面板和显示装置 |
US20220384366A1 (en) * | 2021-06-01 | 2022-12-01 | Cree, Inc. | Multilayer encapsulation for humidity robustness and related fabrication methods |
CN113257841B (zh) * | 2021-07-19 | 2021-11-16 | 深圳市柔宇科技股份有限公司 | Tft基板及其制备方法、显示器以及电子设备 |
CN117501344A (zh) * | 2022-05-31 | 2024-02-02 | 京东方科技集团股份有限公司 | 驱动背板及其制作方法、显示面板 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP3772889B2 (ja) * | 2003-05-19 | 2006-05-10 | セイコーエプソン株式会社 | 電気光学装置およびその駆動装置 |
US7262463B2 (en) * | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
KR100506740B1 (ko) * | 2003-12-23 | 2005-08-08 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
KR100623690B1 (ko) | 2004-06-30 | 2006-09-19 | 삼성에스디아이 주식회사 | 평판 표시 장치 및 그의 제조 방법 |
KR100939998B1 (ko) * | 2004-11-10 | 2010-02-03 | 캐논 가부시끼가이샤 | 비정질 산화물 및 전계 효과 트랜지스터 |
JP5138163B2 (ja) | 2004-11-10 | 2013-02-06 | キヤノン株式会社 | 電界効果型トランジスタ |
KR100685831B1 (ko) | 2005-04-29 | 2007-02-22 | 삼성에스디아이 주식회사 | 유기전계발광소자 및 그의 제조 방법 |
WO2007040194A1 (ja) * | 2005-10-05 | 2007-04-12 | Idemitsu Kosan Co., Ltd. | Tft基板及びtft基板の製造方法 |
US7692610B2 (en) | 2005-11-30 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
TW200801513A (en) | 2006-06-29 | 2008-01-01 | Fermiscan Australia Pty Ltd | Improved process |
KR100712176B1 (ko) | 2006-12-14 | 2007-04-27 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 및 그 제조 방법 |
JP5121254B2 (ja) * | 2007-02-28 | 2013-01-16 | キヤノン株式会社 | 薄膜トランジスタおよび表示装置 |
JP2009031742A (ja) * | 2007-04-10 | 2009-02-12 | Fujifilm Corp | 有機電界発光表示装置 |
US9176353B2 (en) * | 2007-06-29 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
TWI482226B (zh) * | 2008-12-26 | 2015-04-21 | Semiconductor Energy Lab | 具有包含氧化物半導體層之電晶體的主動矩陣顯示裝置 |
-
2009
- 2009-01-12 KR KR1020090002242A patent/KR101034686B1/ko active IP Right Grant
- 2009-03-23 JP JP2009070440A patent/JP5274327B2/ja active Active
-
2010
- 2010-01-08 US US12/654,938 patent/US8436342B2/en active Active
- 2010-01-11 CN CN201010002358XA patent/CN101794809B/zh active Active
- 2010-01-11 EP EP10150419A patent/EP2207206B1/en active Active
- 2010-01-11 AT AT10150419T patent/ATE523898T1/de not_active IP Right Cessation
- 2010-01-12 TW TW099100651A patent/TWI423436B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR101034686B1 (ko) | 2011-05-16 |
EP2207206A1 (en) | 2010-07-14 |
JP2010161327A (ja) | 2010-07-22 |
US20100176383A1 (en) | 2010-07-15 |
TW201030967A (en) | 2010-08-16 |
US8436342B2 (en) | 2013-05-07 |
CN101794809A (zh) | 2010-08-04 |
ATE523898T1 (de) | 2011-09-15 |
TWI423436B (zh) | 2014-01-11 |
CN101794809B (zh) | 2012-11-28 |
EP2207206B1 (en) | 2011-09-07 |
KR20100082940A (ko) | 2010-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5274327B2 (ja) | 有機電界発光表示装置及びその製造方法 | |
JP5368381B2 (ja) | 有機発光表示装置及びその製造方法 | |
KR100941850B1 (ko) | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 | |
KR101048965B1 (ko) | 유기 전계발광 표시장치 | |
US11075221B2 (en) | Thin-film transistor substrate having overlapping thin-film transistor | |
KR100963003B1 (ko) | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 | |
KR20090124527A (ko) | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 | |
JP5285024B2 (ja) | 薄膜トランジスタ及びこれを備えた有機電界発光表示装置 | |
JP2011082487A (ja) | 薄膜トランジスタ及びその製造方法、並びに薄膜トランジスタを備える有機電界発光表示装置 | |
JP2009272427A (ja) | 薄膜トランジスタ及びその製造方法 | |
JP2011023695A (ja) | 有機電界発光表示装置及びその製造方法 | |
KR102530003B1 (ko) | 트랜지스터 표시판 및 이를 포함하는 표시 장치 | |
KR100793105B1 (ko) | 박막트랜지스터 및 박막트랜지스터를 포함한평판표시소자와 그 제조방법 | |
KR100941855B1 (ko) | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 | |
KR20150043075A (ko) | 표시 장치 및 그 제조 방법 | |
KR100982314B1 (ko) | 박막트랜지스터, 그의 제조방법 및 그를 포함하는유기전계발광표시장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120807 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120809 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20121003 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121026 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130416 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130514 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5274327 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |