JP5197425B2 - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
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- Semiconductor Memories (AREA)
Description
図1は、本発明の第1の実施形態に係る半導体記憶装置のブロック図である。
第1の実施形態では、メモリ層の違いによる可変抵抗素子の特性の違いについて考慮してきた。
第1及び第2の実施形態は、熱履歴の違いによる特性のばらつきを考慮し、メモリ層毎に異なるパルス電圧を印加するもので、各メモリ層の特性を均一にすることができる。
書き込み動作において、メモリセルMCに急峻に立ち上がるパルス電圧Vpを与えると、メモリセルMCを構成するダイオードDiの寄生容量の影響で、逆バイアスがかかることがあり、これによりディスターブの問題が生じる。これを抑制するためには、パルス電圧Vpの立ち上がりを緩やかにすることが有効である。この点、カラム制御回路2及びロウ制御回路3から遠くにあるメモリセルMCへの書き込みの場合、そのメモリセルMCへのアクセス経路が有する寄生抵抗、寄生容量が元々大きいため、パルス電圧Vpの立ち上がり、立ち下がりを緩やかになる。一方、カラム制御回路2及びロウ制御回路3から近くあるメモリセルMCの場合、パルス電圧Vpの立ち上がり、立ち下がりは急峻になるため、ディスターブの危険性が大きくなる。
本発明の第5の実施形態に係る半導体記憶装置は、複数回にわたりパルス電圧を与えることで段階的にデータ書き込みを実行するものであり、電気エネルギの開始値が異なったパルス電圧をメモリセル毎に与えるものである。
本発明の第6の実施形態は、第5の実施形態の場合と同様、メモリセルに対する書き込み動作を段階的に実行するものであるが、各ステップ間でベリファイを行い、その結果に応じて次ステップで与えるパルス電圧Vpの電気エネルギを調整するものである。
第6の実施形態のように、段階的にデータ書き込みを行う場合、メモリセルMCの可変抵抗素子VRを高抵抗状態から低抵抗状態に遷移させる過程において、メモリセルMCに流れる電流が増大していくためメモリセルMCを破壊するおそれがある。この点、メモリセルMCに流れる電流に制限を加えておけば、メモリセルMCの破壊の恐れを低減させることができる。しかし、電流を制限した場合、特に書き込み特性が悪いメモリセルMCでは、データの書き込みが正常に行われない恐れがある。
以上、書き込み動作について説明したが、消去動作、読み出し動作についてもパルス電圧Vpを制御することで、各メモリ層あるいは各メモリセルの特性を均一にすることができる。
Claims (11)
- 互いに平行な複数の第1の配線、これらの第1の配線と交差するように配置された互いに平行な複数の第2の配線、並びにこれら第1の配線及び第2の配線の交差部に接続された複数のメモリセルを備えたセルアレイをそれぞれ有し、多層に配置された複数のメモリ層と、
前記メモリセルに対するデータのアクセスに必要なパルスを発生し出力するパルスジェネレータと、
前記パルスジェネレータから出力されるパルスが、アクセスしようとするメモリセルが属するメモリ層に応じたエネルギとなるように前記パルスジェネレータを制御する制御手段と、
を備え、
前記パルスジェネレータは、前記各メモリ層の第1又は第2の配線に、メモリ層毎にステップ幅の異なる複数のパルスを供給する
ことを特徴とする半導体記憶装置。 - 前記制御手段は、アクセスするメモリセルのアドレスと前記メモリ層毎に予め設定されたパラメータとに基づいて、前記パルスジェネレータを制御する
ことを特徴とする請求項1記載の半導体記憶装置。 - 前記パラメータは、いずれかの前記メモリセルに保持されている
ことを特徴とする請求項2記載の半導体記憶装置。 - 前記パルスジェネレータは、前記各メモリ層の第1又は第2の配線に、幅及び高さの少なくとも一方が異なる複数のパルスを同時に供給する
ことを特徴とする請求項1〜3のいずれか1項記載の半導体記憶装置。 - 互いに平行な複数の第1の配線、これらの第1の配線と交差するように配置された互いに平行な複数の第2の配線、並びにこれら第1の配線及び第2の配線の交差部に接続された複数のメモリセルを備えたセルアレイと、
前記メモリセルに対するデータのアクセスに必要なパルスを発生し出力するパルスジェネレータと、
前記パルスジェネレータから出力されるパルスが、アクセスしようとするメモリセルに応じたエネルギとなるように前記パルスジェネレータを制御する制御手段と
を備え、
前記パルスジェネレータは、前記第1又は第2の配線に、立ち上がり又は立ち下がり時間が異なる複数のパルスを供給する
ことを特徴とする半導体記憶装置。 - 前記制御手段は、アクセスするメモリセルのアドレス毎に予め設定されたパラメータに基づいて、前記パルスジェネレータを制御する
ことを特徴とする請求項5記載の半導体記憶装置。 - 前記パルスジェネレータは、前記第1又は第2の配線に、幅及び高さの少なくとも一方が異なる複数のパルスを供給する
ことを特徴とする請求項5又は6記載の半導体記憶装置。 - 前記パルスジェネレータは、前記第1又は第2の配線に、立ち上がり又は立ち下がり時間が異なる複数のパルスを供給する
ことを特徴とする請求項1〜4のいずれか1項記載の半導体記憶装置。 - 前記セルアレイは、前記メモリセルのアクセス時に、前記メモリセルに流れる電流を制限する電流制限手段を備え、
前記電流制限手段は、アクセスするメモリセルのアドレスに応じて電流の制限値を設定する
ことを特徴とする請求項1〜8のいずれか1項記載の半導体記憶装置。 - 前記パルスジェネレータは、前記第1又は第2の配線に、メモリセル毎にエネルギの異なる複数のパルスを供給する
ことを特徴とする請求項1〜9のいずれか1項記載の半導体記憶装置。 - 前記パルスジェネレータは、前記第1又は第2の配線に、メモリセル毎にエネルギの異なる複数のパルスを供給し、
前記電流制限手段は、前記パルスジェネレータが前記メモリセルに前記パルスを供給する毎に前記電流の制限値をステップアップさせる
ことを特徴とする請求項9記載の半導体記憶装置。
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JP2009036278A JP5197425B2 (ja) | 2008-02-29 | 2009-02-19 | 半導体記憶装置 |
US13/027,798 US8064272B2 (en) | 2008-02-29 | 2011-02-15 | Semiconductor memory device |
US13/864,015 US8817552B2 (en) | 2008-02-29 | 2013-04-16 | Semiconductor memory device |
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JP2008050626 | 2008-02-29 | ||
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JP2009036278A JP5197425B2 (ja) | 2008-02-29 | 2009-02-19 | 半導体記憶装置 |
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JP5197425B2 true JP5197425B2 (ja) | 2013-05-15 |
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US (4) | US7911854B2 (ja) |
JP (1) | JP5197425B2 (ja) |
KR (1) | KR101015325B1 (ja) |
TW (2) | TWI517156B (ja) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8139409B2 (en) | 2010-01-29 | 2012-03-20 | Unity Semiconductor Corporation | Access signal adjustment circuits and methods for memory cells in a cross-point array |
TWI433302B (zh) * | 2009-03-03 | 2014-04-01 | Macronix Int Co Ltd | 積體電路自對準三度空間記憶陣列及其製作方法 |
JP4806046B2 (ja) * | 2009-03-16 | 2011-11-02 | 株式会社東芝 | 半導体記憶装置 |
JP4846816B2 (ja) * | 2009-03-19 | 2011-12-28 | 株式会社東芝 | 抵抗変化型メモリ |
JP5426438B2 (ja) * | 2009-04-30 | 2014-02-26 | 株式会社東芝 | 不揮発性半導体記憶装置 |
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US8347175B2 (en) * | 2009-09-28 | 2013-01-01 | Kabushiki Kaisha Toshiba | Magnetic memory |
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JP2009230849A (ja) | 2009-10-08 |
TWI413121B (zh) | 2013-10-21 |
US8477542B2 (en) | 2013-07-02 |
TWI517156B (zh) | 2016-01-11 |
US20110134681A1 (en) | 2011-06-09 |
US7911854B2 (en) | 2011-03-22 |
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US20130308368A1 (en) | 2013-11-21 |
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