JP5160112B2 - 処理装置内構造体、プラズマ処理装置内構造体及びプラズマ処理装置 - Google Patents
処理装置内構造体、プラズマ処理装置内構造体及びプラズマ処理装置 Download PDFInfo
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- JP5160112B2 JP5160112B2 JP2007070370A JP2007070370A JP5160112B2 JP 5160112 B2 JP5160112 B2 JP 5160112B2 JP 2007070370 A JP2007070370 A JP 2007070370A JP 2007070370 A JP2007070370 A JP 2007070370A JP 5160112 B2 JP5160112 B2 JP 5160112B2
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- 239000000758 substrate Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 35
- 238000005507 spraying Methods 0.000 claims description 23
- 230000001681 protective effect Effects 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 18
- 239000012212 insulator Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 description 24
- 238000001020 plasma etching Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000010407 anodic oxide Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910000734 martensite Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Description
を具備したことを特徴とする。
Claims (5)
- 被処理基板を処理する処理チャンバー内に配設される処理装置内構造体であって、
少なくとも第1の面と第2の面を有する基材と、
前記第2の面を有し、前記第1の面に対して上下動自在とする基板支持部材が配置される前記基材に形成された孔と、
前記第1の面を覆う絶縁性の溶射皮膜と、
前記第2の面である前記孔の内側面を覆う筒状体であり、前記基材とは異なる線膨張係数を有する材料からなる絶縁性の保護部材と、
前記溶射皮膜と前記保護部材との間に介在する緩衝面を構成する絶縁体層とを具備し、
前記保護部材は、前記溶射皮膜と前記保護部材との接触箇所が無いように前記孔の上端部から下側に配置されており、
前記基材は、導電性材料から構成され、プラズマ処理のための電極として作用する
ことを特徴とする処理装置内構造体。 - 請求項1記載の処理装置内構造体であって、
前記絶縁体層が、前記基材の酸化物からなることを特徴とする処理装置内構造体。 - 請求項1又は2記載の処理装置内構造体であって、
前記溶射皮膜内に、前記被処理基板を静電吸着するための電極が設けられていることを特徴とする処理装置内構造体。 - 被処理基板にプラズマを作用させて処理する処理チャンバー内に配設されるプラズマ処理装置内構造体であって、
上面を前記被処理基板が載置される載置面とされ、前記載置面に上下動自在とされた基板支持部材が配置される透孔を有する導電性部材からなる基材と、
前記載置面を覆う絶縁性の溶射皮膜と、
前記透孔内側面を覆う円筒状の保護部材であって、その頂部が前記載置面より所定距離下側に位置するように配置され、前記基材とは異なる線膨張係数を有する材料からなる絶縁性の保護部材と、
前記透孔内側面の、前記保護部材の頂部より上側部分を覆う絶縁体層と
を具備したことを特徴とするプラズマ処理装置内構造体。 - 被処理基板を収容する処理チャンバーと、
前記被処理基板を支持する処理装置内構造体と、
前記処理チャンバー内に処理ガスを供給する処理ガス供給手段と、
前記処理ガス供給手段から供給された前記処理ガスをプラズマ化して前記被処理基板を処理するプラズマ生成手段と、
前記処理チャンバー内を減圧雰囲気にする排気手段と、
を備え、
前記処理装置内構造体は、
少なくとも第1の面と第2の面を有する基材と、
前記第2の面を有し、前記第1の面に対し上下動自在とする基板支持部材が配置される前記基材に形成された孔と、
前記第1の面を覆う絶縁性の溶射皮膜と、
前記第2の面である前記孔の内側面を覆う筒状体であり、前記基材とは異なる線膨張係数を有する材料からなる絶縁性の保護部材と、
前記溶射皮膜と前記保護部材との間に介在する緩衝面を構成する絶縁体層と、
を具備し、
前記保護部材は、前記溶射皮膜と前記保護部材との接触箇所が無いように前記孔の上端部から下側に配置されている
ことを特徴とするプラズマ処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007070370A JP5160112B2 (ja) | 2007-03-19 | 2007-03-19 | 処理装置内構造体、プラズマ処理装置内構造体及びプラズマ処理装置 |
CN2007101674321A CN101271859B (zh) | 2007-03-19 | 2007-10-24 | 等离子体处理装置内结构体和等离子体处理装置 |
US12/046,723 US8636873B2 (en) | 2007-03-19 | 2008-03-12 | Plasma processing apparatus and structure therein |
TW097109527A TWI453815B (zh) | 2007-03-19 | 2008-03-18 | Plasma processing device interior structure and plasma processing device |
KR1020080025408A KR100995203B1 (ko) | 2007-03-19 | 2008-03-19 | 플라즈마 처리 장치내 구조체 및 플라즈마 처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007070370A JP5160112B2 (ja) | 2007-03-19 | 2007-03-19 | 処理装置内構造体、プラズマ処理装置内構造体及びプラズマ処理装置 |
Publications (2)
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JP2008235430A JP2008235430A (ja) | 2008-10-02 |
JP5160112B2 true JP5160112B2 (ja) | 2013-03-13 |
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JP2007070370A Active JP5160112B2 (ja) | 2007-03-19 | 2007-03-19 | 処理装置内構造体、プラズマ処理装置内構造体及びプラズマ処理装置 |
Country Status (5)
Country | Link |
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US (1) | US8636873B2 (ja) |
JP (1) | JP5160112B2 (ja) |
KR (1) | KR100995203B1 (ja) |
CN (1) | CN101271859B (ja) |
TW (1) | TWI453815B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5201527B2 (ja) * | 2008-03-28 | 2013-06-05 | 東京エレクトロン株式会社 | 静電チャック、及びその製造方法 |
WO2010032750A1 (ja) * | 2008-09-16 | 2010-03-25 | 東京エレクトロン株式会社 | 基板処理装置および基板載置台 |
US9728429B2 (en) * | 2010-07-27 | 2017-08-08 | Lam Research Corporation | Parasitic plasma prevention in plasma processing chambers |
JP5829509B2 (ja) * | 2011-12-20 | 2015-12-09 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
KR101902349B1 (ko) | 2012-02-08 | 2018-09-28 | 스미토모 오사카 세멘토 가부시키가이샤 | 정전 척 장치 |
JP6017328B2 (ja) * | 2013-01-22 | 2016-10-26 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP6688715B2 (ja) * | 2016-09-29 | 2020-04-28 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
WO2019131115A1 (ja) * | 2017-12-28 | 2019-07-04 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP7064895B2 (ja) * | 2018-02-05 | 2022-05-11 | 株式会社日立ハイテク | プラズマ処理装置 |
CN115706041A (zh) * | 2021-08-11 | 2023-02-17 | 中微半导体设备(上海)股份有限公司 | 一种基片位置检测装置及其***和方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0531239A (ja) | 1991-05-21 | 1993-02-09 | Sophia Co Ltd | 遊技装置 |
JP2791333B2 (ja) | 1991-08-28 | 1998-08-27 | オリエンタル写真工業株式会社 | 熱現像性感光材料 |
JP2600558Y2 (ja) * | 1991-10-02 | 1999-10-12 | 住友金属工業株式会社 | 静電チャック |
JPH0553239U (ja) * | 1991-12-13 | 1993-07-13 | 住友金属工業株式会社 | 試料保持装置 |
US5557215A (en) | 1993-05-12 | 1996-09-17 | Tokyo Electron Limited | Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus |
JPH1068058A (ja) | 1996-08-26 | 1998-03-10 | Toyota Motor Corp | 溶射方法 |
JPH11233602A (ja) * | 1998-02-12 | 1999-08-27 | Hitachi Ltd | 静電吸着装置及び試料処理装置 |
JP2002170872A (ja) | 2000-12-04 | 2002-06-14 | Kyocera Corp | 静電チャック |
JP4095842B2 (ja) | 2002-06-26 | 2008-06-04 | 日本特殊陶業株式会社 | 静電チャック |
JP4034145B2 (ja) * | 2002-08-09 | 2008-01-16 | 住友大阪セメント株式会社 | サセプタ装置 |
JP4503270B2 (ja) * | 2002-11-28 | 2010-07-14 | 東京エレクトロン株式会社 | プラズマ処理容器内部材 |
JP2004253768A (ja) | 2002-12-25 | 2004-09-09 | Toto Ltd | 静電チャックおよび誘電体薄膜形成方法 |
JP4421874B2 (ja) * | 2003-10-31 | 2010-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
KR100505035B1 (ko) | 2003-11-17 | 2005-07-29 | 삼성전자주식회사 | 기판을 지지하기 위한 정전척 |
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2007
- 2007-03-19 JP JP2007070370A patent/JP5160112B2/ja active Active
- 2007-10-24 CN CN2007101674321A patent/CN101271859B/zh not_active Expired - Fee Related
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2008
- 2008-03-12 US US12/046,723 patent/US8636873B2/en active Active
- 2008-03-18 TW TW097109527A patent/TWI453815B/zh active
- 2008-03-19 KR KR1020080025408A patent/KR100995203B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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US20080230181A1 (en) | 2008-09-25 |
JP2008235430A (ja) | 2008-10-02 |
CN101271859B (zh) | 2010-11-24 |
TWI453815B (zh) | 2014-09-21 |
US8636873B2 (en) | 2014-01-28 |
KR20080085764A (ko) | 2008-09-24 |
CN101271859A (zh) | 2008-09-24 |
TW200903627A (en) | 2009-01-16 |
KR100995203B1 (ko) | 2010-11-17 |
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