JP5201527B2 - 静電チャック、及びその製造方法 - Google Patents
静電チャック、及びその製造方法 Download PDFInfo
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- JP5201527B2 JP5201527B2 JP2008085417A JP2008085417A JP5201527B2 JP 5201527 B2 JP5201527 B2 JP 5201527B2 JP 2008085417 A JP2008085417 A JP 2008085417A JP 2008085417 A JP2008085417 A JP 2008085417A JP 5201527 B2 JP5201527 B2 JP 5201527B2
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- Prior art keywords
- electrostatic chuck
- layer
- recess
- metal layer
- shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000919 ceramic Substances 0.000 claims description 70
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 15
- 239000012212 insulator Substances 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 6
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 13
- 239000004020 conductor Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- 239000007921 spray Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000007751 thermal spraying Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4998—Combined manufacture including applying or shaping of fluent material
- Y10T29/49982—Coating
- Y10T29/49986—Subsequent to metal working
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Coating By Spraying Or Casting (AREA)
- Drying Of Semiconductors (AREA)
Description
また、膜状電極とは別に、ESCの均熱化を図るため金属材料から成る伝熱層をESCに設けることがある。
例えば下記特許文献1には、導電体と絶縁性セラミックス基材とを有する半導体製造用サセプターにおいて、セラミックス基材からの導電体の露出部分が絶縁性の溶射膜によって被覆されていることを特徴とする半導体製造用サセプターが開示されている。
2 支持体
3 静電チャック層
4 ヒーター層
5 アルミニウム接合層
6 セラミックス溶射層
7 内部電極
8 給電棒
9 抵抗発熱体層
10a,10b 給電線
11 熱媒体流路
12 ガス供給管
13 凹部
14 積層構造体
20 導電体層
21 静電チャック(ESC)
22 セラミックス基材
23 円板状支持体
24 膜状電極
25 溝
Claims (12)
- 絶縁体層に挟み込まれた金属層を含む積層構造の静電チャックであって、
前記金属層の周縁の露出部分に形成された凹部が絶縁性の溶射膜によって被覆され、
前記溶射膜は、少なくとも前記凹部の内側に露出する前記金属層を被覆し、かつ前記凹部より突出しないよう被覆されていることを特徴とする静電チャック。 - 前記金属層が導電層、又は均熱層であることを特徴とする請求項1に記載の静電チャック。
- 前記凹部の断面形状が、漏斗状、放物線状、平皿状、楕円弧状、円弧状のいずれかであることを特徴とする請求項1又は2に記載の静電チャック。
- 前記溶射膜が、アルミナを含有するセラミックス製の絶縁膜であることを特徴とする請求項1から3のいずれかに記載の静電チャック。
- 前記溶射膜は、イットリア溶射により形成されたことを特徴とする請求項1から3のいずれかに記載の静電チャック。
- 前記溶射膜の表面が研削されていることを特徴とする請求項1から5のいずれかに記載の静電チャック。
- 前記凹部の幅が1.0mm以下であることを特徴とする請求項1から6のいずれかに記載の静電チャック。
- 絶縁体層に挟み込まれた金属層を含む積層構造の静電チャックの製造方法であって、
前記金属層の周縁に凹部を形成し、
少なくとも前記凹部に露出する前記金属層を覆うように絶縁性の溶射膜を形成し、
前記溶射膜が前記凹部より突出しないよう前記溶射膜を研削することを特徴とする静電チャックの製造方法。 - 前記金属層が導電層、又は均熱層であることを特徴とする請求項8に記載の静電チャックの製造方法。
- 前記凹部の断面形状を漏斗状、放物線状、平皿状、楕円弧状、円弧状のいずれかに形成することを特徴とする請求項8又は9に記載の静電チャックの製造方法。
- アルミナを含有するセラミックス製の材料を溶射し、前記溶射膜を形成することを特徴とする請求項8から10のいずれかに記載の静電チャックの製造方法。
- イットリア溶射により前記溶射膜を形成することを特徴とする請求項8から10のいずれかに記載の静電チャックの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008085417A JP5201527B2 (ja) | 2008-03-28 | 2008-03-28 | 静電チャック、及びその製造方法 |
CN2009101270543A CN101546724B (zh) | 2008-03-28 | 2009-03-23 | 静电卡盘及其制造方法 |
US12/410,873 US8517392B2 (en) | 2008-03-28 | 2009-03-25 | Electrostatic chuck and manufacturing method thereof |
TW098110146A TWI442501B (zh) | 2008-03-28 | 2009-03-27 | Electrostatic chuck and its manufacturing method |
US13/948,921 US8776356B2 (en) | 2008-03-28 | 2013-07-23 | Electrostatic chuck and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008085417A JP5201527B2 (ja) | 2008-03-28 | 2008-03-28 | 静電チャック、及びその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009235536A JP2009235536A (ja) | 2009-10-15 |
JP2009235536A5 JP2009235536A5 (ja) | 2011-05-12 |
JP5201527B2 true JP5201527B2 (ja) | 2013-06-05 |
Family
ID=41115938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008085417A Active JP5201527B2 (ja) | 2008-03-28 | 2008-03-28 | 静電チャック、及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8517392B2 (ja) |
JP (1) | JP5201527B2 (ja) |
CN (1) | CN101546724B (ja) |
TW (1) | TWI442501B (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9728429B2 (en) * | 2010-07-27 | 2017-08-08 | Lam Research Corporation | Parasitic plasma prevention in plasma processing chambers |
JP5876992B2 (ja) * | 2011-04-12 | 2016-03-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP5982206B2 (ja) * | 2012-07-17 | 2016-08-31 | 東京エレクトロン株式会社 | 下部電極、及びプラズマ処理装置 |
KR101372805B1 (ko) * | 2012-11-30 | 2014-03-19 | 로체 시스템즈(주) | 웨이퍼 식각 시스템 및 이를 이용한 웨이퍼 식각 공정 |
CN104241181B (zh) * | 2013-06-08 | 2018-05-29 | 中微半导体设备(上海)有限公司 | 静电吸盘的制造方法,静电吸盘及等离子体处理装置 |
KR101385950B1 (ko) * | 2013-09-16 | 2014-04-16 | 주식회사 펨빅스 | 정전척 및 정전척 제조 방법 |
CH708654A2 (fr) * | 2013-10-01 | 2015-04-15 | Rado Montres Sa | Procédé de fabrication d'un élément céramique incrusté d'une pièce d'horlogerie et pièces d'horlogerie incluant de tels éléments. |
JP6277015B2 (ja) * | 2014-02-28 | 2018-02-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
TW201603164A (zh) | 2014-04-01 | 2016-01-16 | 恩特格林斯公司 | 加熱靜電卡盤 |
TWI613753B (zh) | 2015-02-16 | 2018-02-01 | 靜電吸附承盤側壁之改良密封件 | |
WO2017099919A1 (en) * | 2015-12-07 | 2017-06-15 | Applied Materials, Inc. | Amalgamated cover ring |
CN106935529B (zh) * | 2015-12-31 | 2020-03-24 | 中微半导体设备(上海)股份有限公司 | 一种基片支撑台及其制造方法 |
JP6971183B2 (ja) * | 2018-03-23 | 2021-11-24 | 新光電気工業株式会社 | 基板固定装置 |
CN112166496B (zh) * | 2018-05-28 | 2024-05-03 | 日本特殊陶业株式会社 | 保持装置及保持装置的制造方法 |
JP6901547B2 (ja) * | 2018-09-28 | 2021-07-14 | 日本特殊陶業株式会社 | 半導体製造用部品 |
JP7134826B2 (ja) * | 2018-10-11 | 2022-09-12 | 東京エレクトロン株式会社 | 静電チャックの生産方法 |
CN113994462A (zh) * | 2019-09-06 | 2022-01-28 | Toto株式会社 | 静电吸盘 |
JP7438070B2 (ja) | 2020-09-11 | 2024-02-26 | 新光電気工業株式会社 | 静電チャック、基板固定装置及び基板固定装置の製造方法 |
US11881423B2 (en) | 2021-02-09 | 2024-01-23 | Applied Materials, Inc. | Electrostatic chuck with metal bond |
JP7248182B1 (ja) | 2022-08-30 | 2023-03-29 | 住友大阪セメント株式会社 | 静電チャック部材及び静電チャック装置 |
CN116959948B (zh) * | 2023-09-21 | 2023-12-08 | 江苏鲁汶仪器股份有限公司 | 一种静电吸盘以及等离子体刻蚀装置 |
Family Cites Families (9)
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JP2984164B2 (ja) * | 1993-03-26 | 1999-11-29 | 日本碍子株式会社 | 半導体製造用サセプター |
US5986874A (en) * | 1997-06-03 | 1999-11-16 | Watkins-Johnson Company | Electrostatic support assembly having an integral ion focus ring |
JP3974226B2 (ja) | 1997-07-15 | 2007-09-12 | プレス工業株式会社 | 溶接部の強化方法及び溶接部の強化装置 |
JP4493251B2 (ja) * | 2001-12-04 | 2010-06-30 | Toto株式会社 | 静電チャックモジュールおよび基板処理装置 |
JP2003264223A (ja) * | 2002-03-08 | 2003-09-19 | Rasa Ind Ltd | 静電チャック部品および静電チャック装置およびその製造方法 |
JP4066329B2 (ja) * | 2002-09-05 | 2008-03-26 | 太平洋セメント株式会社 | 静電チャックの製造方法およびそれを用いて得られた静電チャック |
JP2003321760A (ja) * | 2003-05-19 | 2003-11-14 | Tocalo Co Ltd | プラズマ処理容器内部材およびその製造方法 |
JP5019811B2 (ja) | 2006-07-20 | 2012-09-05 | 東京エレクトロン株式会社 | 静電吸着電極の補修方法 |
JP5160112B2 (ja) * | 2007-03-19 | 2013-03-13 | 東京エレクトロン株式会社 | 処理装置内構造体、プラズマ処理装置内構造体及びプラズマ処理装置 |
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2008
- 2008-03-28 JP JP2008085417A patent/JP5201527B2/ja active Active
-
2009
- 2009-03-23 CN CN2009101270543A patent/CN101546724B/zh active Active
- 2009-03-25 US US12/410,873 patent/US8517392B2/en active Active
- 2009-03-27 TW TW098110146A patent/TWI442501B/zh active
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2013
- 2013-07-23 US US13/948,921 patent/US8776356B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW200949980A (en) | 2009-12-01 |
US8517392B2 (en) | 2013-08-27 |
CN101546724A (zh) | 2009-09-30 |
JP2009235536A (ja) | 2009-10-15 |
US20090243236A1 (en) | 2009-10-01 |
US20130306593A1 (en) | 2013-11-21 |
TWI442501B (zh) | 2014-06-21 |
CN101546724B (zh) | 2011-08-03 |
US8776356B2 (en) | 2014-07-15 |
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