JP5073992B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5073992B2 JP5073992B2 JP2006230730A JP2006230730A JP5073992B2 JP 5073992 B2 JP5073992 B2 JP 5073992B2 JP 2006230730 A JP2006230730 A JP 2006230730A JP 2006230730 A JP2006230730 A JP 2006230730A JP 5073992 B2 JP5073992 B2 JP 5073992B2
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- Japan
- Prior art keywords
- metal layer
- electrode
- main surface
- semiconductor substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 168
- 229910052751 metal Inorganic materials 0.000 claims description 227
- 239000002184 metal Substances 0.000 claims description 227
- 239000000758 substrate Substances 0.000 claims description 105
- 239000010931 gold Substances 0.000 claims description 30
- 230000007797 corrosion Effects 0.000 claims description 19
- 238000005260 corrosion Methods 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 17
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 202
- 239000012535 impurity Substances 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 238000002845 discoloration Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 229920006395 saturated elastomer Polymers 0.000 description 8
- 108091006146 Channels Proteins 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 210000000746 body region Anatomy 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Electrodes Of Semiconductors (AREA)
Description
2 n−型半導体層
4 チャネル層
7 トレンチ
10 半導体基板(半導体チップ)
11 ゲート絶縁膜
13 ゲート電極
13c 連結部
14 ボディ領域
15 ソース領域
16 層間絶縁膜
17、17a、17b ソース電極
18 ドレイン電極
19p、19pa、19pb ゲートパッド電極
20、20a、20b 素子領域
22、22’ 高濃度不純物領域
23 窒化膜
24 UBM
25 ソルダーレジスト
27 ソースバンプ電極
28 ドレインバンプ電極
29 ゲートバンプ電極
31 第1金属層
32 第2金属層
33 第3金属層
40 他の金属層
TM 厚膜金属層 Sf1 第1主面
Sf2 第2主面
200 スイッチング素子
100、100a、100b MOSFET
S、S1、S2 ソース端子(電極)
G、G1、G2 ゲート端子(電極)
D ドレイン端子(電極)
Claims (7)
- 第1主面および第2主面を有する半導体基板と、
前記半導体基板に設けられたディスクリート半導体の素子領域と、
前記半導体基板の前記第1主面側に設けられ、前記素子領域にそれぞれ接続する第1の電極および第2の電極と、
前記半導体基板の前記第2主面側を被覆する金属層と、
前記第2主面側に形成された刻印と、を備え、
前記金属層は、前記第2主面側に露出し耐腐食性および耐酸化性を有する第1金属層と、前記第1金属層と前記半導体基板の前記第2主面との間に設けられた第2金属層と、を有し、前記第1金属層は前記第2金属層より膜厚が厚い厚膜金属層であり、
前記第1の電極から、前記半導体基板、前記第2金属層を経由して前記厚膜金属層に至るまでの第1電流経路と、前記厚膜金属層から前記第2金属層および前記半導体基板を経由して前記第2の電極に至るまでの第2電流経路と、が形成されることを特徴とする半導体装置。 - 第1主面および第2主面を有する半導体基板と、
前記半導体基板に設けられたディスクリート半導体の素子領域と、
前記半導体基板の前記第1主面側に設けられ、前記素子領域にそれぞれ接続する第1の電極および第2の電極と、
前記半導体基板の前記第2主面側を被覆する金属層と、
前記第2主面側に形成された刻印と、を備え、
前記金属層は、前記第2主面側に露出し耐腐食性および耐酸化性を有する第1金属層と、前記第1金属層と前記半導体基板の前記第2主面との間に設けられた第2金属層と、該第2金属層と前記第1金属層の間に設けられた第3金属層と、を有し、前記第3金属層は前記第1金属層より膜厚が厚い厚膜金属層であり、
前記第1の電極から、前記半導体基板、前記第2金属層を経由して前記厚膜金属層に至るまでの第1電流経路と、前記厚膜金属層から前記第2金属層および前記半導体基板を経由して前記第2の電極に至るまでの第2電流経路と、が形成されることを特徴とする半導体装置。 - 前記第1金属層は金であることを特徴とする請求項1または請求項2に記載の半導体装置。
- 前記第3金属層は銅であることを特徴とする請求項2に記載の半導体装置。
- 前記厚膜金属層の膜厚は、5000Å〜20000Åであることを特徴とする請求項1から請求項4の何れかに記載の半導体装置。
- 前記素子領域に、電界効果トランジスタ、バイポーラトランジスタ、ダイオードのいずれかが設けられることを特徴とする請求項1から請求項5の何れかに記載の半導体装置。
- 前記素子領域は、前記半導体基板の一部を共通のドレイン領域とする第1絶縁ゲート型半導体素子領域および第2絶縁ゲート型半導体素子領域を有し、
前記第1の電極は、第1絶縁ゲート型半導体素子領域に接続する第1ソース電極であり、
前記第2の電極は、第2絶縁ゲート型半導体素子領域に接続する第2ソース電極である、ことを特徴とする請求項1から請求項6の何れかに記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006230730A JP5073992B2 (ja) | 2006-08-28 | 2006-08-28 | 半導体装置 |
CN2007101417746A CN101136430B (zh) | 2006-08-28 | 2007-08-21 | 半导体装置 |
KR1020070084882A KR100884675B1 (ko) | 2006-08-28 | 2007-08-23 | 반도체 장치 |
TW096131363A TWI348742B (en) | 2006-08-28 | 2007-08-24 | Semiconductor device |
US11/845,473 US7772704B2 (en) | 2006-08-28 | 2007-08-27 | Semiconductor device |
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JP2006230730A JP5073992B2 (ja) | 2006-08-28 | 2006-08-28 | 半導体装置 |
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US (1) | US7772704B2 (ja) |
JP (1) | JP5073992B2 (ja) |
KR (1) | KR100884675B1 (ja) |
CN (1) | CN101136430B (ja) |
TW (1) | TWI348742B (ja) |
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US11532618B2 (en) | 2021-03-30 | 2022-12-20 | Kabushiki Kaisha Toshiba | Semiconductor device |
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JP4664833B2 (ja) * | 2006-02-15 | 2011-04-06 | 株式会社東芝 | 半導体記憶装置 |
JP2008085188A (ja) * | 2006-09-28 | 2008-04-10 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
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JP5337470B2 (ja) * | 2008-04-21 | 2013-11-06 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 絶縁ゲート型半導体装置 |
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CN204030643U (zh) * | 2013-06-01 | 2014-12-17 | 快捷半导体(苏州)有限公司 | 用于电池管理和保护的***及设备 |
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TWI690083B (zh) | 2015-04-15 | 2020-04-01 | 杰力科技股份有限公司 | 功率金氧半導體場效電晶體及其製作方法 |
JP6480795B2 (ja) | 2015-04-16 | 2019-03-13 | ルネサスエレクトロニクス株式会社 | 半導体装置およびそれを用いた回路装置 |
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US9564406B1 (en) * | 2015-07-30 | 2017-02-07 | Alpha And Omega Semiconductor Incorporated | Battery protection package and process of making the same |
CN108028234B (zh) * | 2015-12-04 | 2021-12-31 | 瑞萨电子株式会社 | 半导体芯片、半导体器件以及电子器件 |
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KR100284746B1 (ko) * | 1999-01-15 | 2001-03-15 | 김덕중 | 소스 영역 하부의 바디 저항이 감소된 전력용 디모스 트랜지스터 |
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JP2002368218A (ja) * | 2001-06-08 | 2002-12-20 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
JP2003045875A (ja) | 2001-07-30 | 2003-02-14 | Nec Kagobutsu Device Kk | 半導体装置およびその製造方法 |
JP3601529B2 (ja) | 2001-08-09 | 2004-12-15 | 株式会社デンソー | 半導体装置 |
JP2003101025A (ja) * | 2001-09-26 | 2003-04-04 | Toshiba Corp | 半導体装置 |
JP2003318130A (ja) * | 2002-04-24 | 2003-11-07 | Sanyo Electric Co Ltd | 半導体装置 |
TWI361490B (en) * | 2003-09-05 | 2012-04-01 | Renesas Electronics Corp | A semiconductor device and a method of manufacturing the same |
JP2005101334A (ja) * | 2003-09-25 | 2005-04-14 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2006059929A (ja) * | 2004-08-18 | 2006-03-02 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
JP4153932B2 (ja) * | 2004-09-24 | 2008-09-24 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
US7446354B2 (en) * | 2005-04-25 | 2008-11-04 | Semiconductor Components Industries, L.L.C. | Power semiconductor device having improved performance and method |
DE102006037118B3 (de) * | 2006-08-07 | 2008-03-13 | Infineon Technologies Ag | Halbleiterschaltmodul für Bordnetze mit mehreren Halbleiterchips, Verwendung eines solchen Halbleiterschaltmoduls und Verfahren zur Herstellung desselben |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US11532618B2 (en) | 2021-03-30 | 2022-12-20 | Kabushiki Kaisha Toshiba | Semiconductor device |
Also Published As
Publication number | Publication date |
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KR20080019549A (ko) | 2008-03-04 |
KR100884675B1 (ko) | 2009-02-18 |
US7772704B2 (en) | 2010-08-10 |
TWI348742B (en) | 2011-09-11 |
CN101136430B (zh) | 2011-01-26 |
JP2008053623A (ja) | 2008-03-06 |
US20080061326A1 (en) | 2008-03-13 |
TW200811972A (en) | 2008-03-01 |
CN101136430A (zh) | 2008-03-05 |
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