JP4980615B2 - 半導体発光素子およびその製法 - Google Patents
半導体発光素子およびその製法 Download PDFInfo
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- JP4980615B2 JP4980615B2 JP2005366961A JP2005366961A JP4980615B2 JP 4980615 B2 JP4980615 B2 JP 4980615B2 JP 2005366961 A JP2005366961 A JP 2005366961A JP 2005366961 A JP2005366961 A JP 2005366961A JP 4980615 B2 JP4980615 B2 JP 4980615B2
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- 239000004065 semiconductor Substances 0.000 title claims description 149
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 60
- 238000005530 etching Methods 0.000 claims description 34
- 150000004767 nitrides Chemical class 0.000 claims description 26
- 125000005842 heteroatom Chemical group 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 164
- 238000000034 method Methods 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000005049 silicon tetrachloride Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910017398 Au—Ni Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
Description
3 n形層
4 活性層
5 p形層
6 半導体積層部
6a 柱状半導体積層部(柱状部)
7 透光性導電層
8 p側電極
9 n側電極
10 メサ構造部
Claims (9)
- 基板と、窒化物半導体からなり第1導電形層、第2導電形層、および該第1導電形層と第2導電形層との間に挟持される活性層を含み、前記基板上に設けられる半導体積層部と、該半導体積層部の表面側の前記第1導電形層に電気的に接続して設けられる第1電極と、前記第2導電形層に電気的に接続して設けられる第2電極とを有する半導体発光素子であって、少なくともチップ周囲において前記第2導電形層が露出するように前記半導体積層部の一部がエッチングされることにより、前記半導体積層部のメサ構造部が形成されると共に、該メサ構造部の周囲に前記半導体積層部が柱状に林立して残存する柱状部が形成され、かつ、該柱状部が、前記メサ構造部の側壁と0.5μm以上の間隔をあけて設けられると共に、該柱状部の高さが前記活性層の位置よりも低くなるように頂部がエッチングされてなる半導体発光素子。
- 前記基板が絶縁性基板からなり、前記半導体積層部の一部がエッチングにより除去されて前記第2導電形層を露出させ、該露出した第2導電形層の表面に前記第2電極が設けられ、該第2電極の周囲にも前記柱状部が林立するように形成され、前記メサ構造部と前記第2電極との間の該柱状部も前記メサ構造部の側壁との間に0.5μm以上の間隔を有するように形成されてなる請求項1記載の半導体発光素子。
- 前記第2電極の底面と、前記柱状部の底面とが同一面になるように前記柱状部が形成されてなる請求項1または2記載の半導体発光素子。
- 前記基板が半導体基板からなり、前記第2電極が該半導体基板の裏面に形成されてなる請求項1記載の半導体発光素子。
- 前記柱状部の高さが、0.5〜5μmの高さになるように形成されてなる請求項1〜4のいずれか1項に記載の半導体発光素子。
- 前記柱状部の高さが、1〜2.5μmの高さになるように形成されてなる請求項5記載の半導体発光素子。
- 前記柱状部の高さが、1〜1.5μmの高さになるように形成されてなる請求項6記載の半導体発光素子。
- 前記柱状部の平面形状が、多角形である請求項1〜7のいずれか1項に記載の半導体発光素子。
- ウェハ状基板表面に発光層を形成するように活性層をn形層とp形層とで挟持したダブルへテロ構造を有する窒化物半導体層を積層して半導体積層部を形成し、該半導体積層部が形成されたウェハ状基板を分割してチップ化することにより発光素子チップを形成する半導体発光素子の製法であって、前記ウェハ状基板をチップに分割する部分の前記半導体積層部を、柱状の半導体積層部からなる柱状部が林立して残存すると共に、中央部に残存するメサ構造部と前記柱状部との間隔が0.5μm以上になるようにマスクを形成して、前記基板側の導電形の半導体層が露出するまでエッチングすることにより、半導体積層部からなる前記メサ構造部の周囲に柱状部を形成し、該メサ構造部をマスクして前記柱状部の高さが前記活性層の位置より低くなるように、前記柱状部の頂部をさらにエッチングし、その後に該柱状部の部分で前記基板を分割することを特徴とする窒化物半導体発光素子の製法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005366961A JP4980615B2 (ja) | 2005-02-08 | 2005-12-20 | 半導体発光素子およびその製法 |
EP06713169A EP1848043A4 (en) | 2005-02-08 | 2006-02-07 | SEMICONDUCTOR LUMINOUS ELEMENT AND METHOD THEREFOR |
US11/815,759 US8124985B2 (en) | 2005-02-08 | 2006-02-07 | Semiconductor light emitting device and method for manufacturing the same |
PCT/JP2006/302026 WO2006085514A1 (ja) | 2005-02-08 | 2006-02-07 | 半導体発光素子およびその製法 |
KR1020077017887A KR20070104384A (ko) | 2005-02-08 | 2006-02-07 | 반도체 발광 소자 및 그 제법 |
CN2006800043424A CN101116192B (zh) | 2005-02-08 | 2006-02-07 | 半导体发光元件及其制法 |
TW095104235A TW200701521A (en) | 2005-02-08 | 2006-02-08 | Semiconductor light emitting element and manufacturing method |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005031682 | 2005-02-08 | ||
JP2005031682 | 2005-02-08 | ||
JP2005366961A JP4980615B2 (ja) | 2005-02-08 | 2005-12-20 | 半導体発光素子およびその製法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006253647A JP2006253647A (ja) | 2006-09-21 |
JP4980615B2 true JP4980615B2 (ja) | 2012-07-18 |
Family
ID=36793086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005366961A Expired - Fee Related JP4980615B2 (ja) | 2005-02-08 | 2005-12-20 | 半導体発光素子およびその製法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8124985B2 (ja) |
EP (1) | EP1848043A4 (ja) |
JP (1) | JP4980615B2 (ja) |
KR (1) | KR20070104384A (ja) |
CN (1) | CN101116192B (ja) |
TW (1) | TW200701521A (ja) |
WO (1) | WO2006085514A1 (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070013273A (ko) | 2004-03-15 | 2007-01-30 | 팅기 테크놀러지스 프라이빗 리미티드 | 반도체 장치의 제조 |
JP2007533133A (ja) | 2004-04-07 | 2007-11-15 | ティンギ テクノロジーズ プライベート リミテッド | 半導体発光ダイオード上での反射層の作製 |
SG130975A1 (en) | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
SG131803A1 (en) | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
SG133432A1 (en) | 2005-12-20 | 2007-07-30 | Tinggi Tech Private Ltd | Localized annealing during semiconductor device fabrication |
SG140473A1 (en) | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
SG140512A1 (en) | 2006-09-04 | 2008-03-28 | Tinggi Tech Private Ltd | Electrical current distribution in light emitting devices |
JP5023674B2 (ja) * | 2006-11-24 | 2012-09-12 | 日亜化学工業株式会社 | 半導体発光素子、半導体発光素子の製造方法及び半導体発光装置 |
TWI437731B (zh) * | 2009-03-06 | 2014-05-11 | Advanced Optoelectronic Tech | 一種具有提升光取出率之半導體光電元件及其製造方法 |
CN101840968B (zh) * | 2009-03-16 | 2012-03-21 | 展晶科技(深圳)有限公司 | 一种能够提升光取出率的半导体光电元件及其制造方法 |
US10205059B2 (en) * | 2010-02-09 | 2019-02-12 | Epistar Corporation | Optoelectronic device and the manufacturing method thereof |
KR20120137865A (ko) * | 2011-06-13 | 2012-12-24 | 엘지이노텍 주식회사 | 발광소자 및 발광소자 패키지 |
KR101786094B1 (ko) * | 2011-06-23 | 2017-10-16 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 패키지, 및 라이트 유닛 |
US20140191194A1 (en) * | 2011-08-09 | 2014-07-10 | Samsung Electronics Co., Ltd. | Nitride semiconductor light-emitting element |
KR20130024089A (ko) * | 2011-08-30 | 2013-03-08 | 엘지이노텍 주식회사 | 발광소자 |
CN102832302A (zh) * | 2012-08-31 | 2012-12-19 | 扬州中科半导体照明有限公司 | 一种GaN基LED中N电极的制作方法 |
KR102013363B1 (ko) | 2012-11-09 | 2019-08-22 | 서울바이오시스 주식회사 | 발광 소자 및 그것을 제조하는 방법 |
US9257481B2 (en) | 2012-11-26 | 2016-02-09 | Epistar Corporation | LED arrray including light-guiding structure |
CN103413874A (zh) * | 2013-08-21 | 2013-11-27 | 聚灿光电科技(苏州)有限公司 | Led芯片及其制备方法 |
KR102075988B1 (ko) * | 2013-09-25 | 2020-03-02 | 삼성전자주식회사 | 반도체 발광소자 제조방법 |
JP6684541B2 (ja) | 2014-01-20 | 2020-04-22 | ローム株式会社 | 発光素子 |
JP2017005191A (ja) | 2015-06-15 | 2017-01-05 | 株式会社東芝 | 半導体発光装置 |
JP6832620B2 (ja) * | 2015-07-17 | 2021-02-24 | スタンレー電気株式会社 | 窒化物半導体発光素子 |
US10727371B2 (en) | 2016-08-02 | 2020-07-28 | Stanley Electric Co., Ltd. | Semiconductor light-emitting element and method for producing same |
JP7010692B2 (ja) * | 2017-12-27 | 2022-01-26 | ローム株式会社 | 半導体発光装置 |
Family Cites Families (11)
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DE4427840A1 (de) * | 1994-07-28 | 1996-02-01 | Osa Elektronik Gmbh | Verfahren zur Effizienzerhöhung von A¶I¶¶I¶¶I¶B¶V¶ - Halbleiter-Chips |
JP3881472B2 (ja) | 1999-04-15 | 2007-02-14 | ローム株式会社 | 半導体発光素子の製法 |
US7304325B2 (en) | 2000-05-01 | 2007-12-04 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light-emitting device |
DE10224219B4 (de) | 2002-05-31 | 2010-05-27 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Halbleiterbauelement mit zumindest teilweise voneinander getrennten Lichterzeugungs- und Lichtauskopplungsbereichen |
TWI292961B (en) * | 2002-09-05 | 2008-01-21 | Nichia Corp | Semiconductor device and an optical device using the semiconductor device |
JP3956918B2 (ja) * | 2002-10-03 | 2007-08-08 | 日亜化学工業株式会社 | 発光ダイオード |
US7102175B2 (en) | 2003-04-15 | 2006-09-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device and method for fabricating the same |
JP2005005679A (ja) * | 2003-04-15 | 2005-01-06 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
JP4572597B2 (ja) * | 2003-06-20 | 2010-11-04 | 日亜化学工業株式会社 | 窒化物半導体素子 |
WO2005004247A1 (en) * | 2003-07-03 | 2005-01-13 | Epivalley Co., Ltd. | Iii-nitride compound semiconductor light emitting device |
US20050082562A1 (en) * | 2003-10-15 | 2005-04-21 | Epistar Corporation | High efficiency nitride based light emitting device |
-
2005
- 2005-12-20 JP JP2005366961A patent/JP4980615B2/ja not_active Expired - Fee Related
-
2006
- 2006-02-07 WO PCT/JP2006/302026 patent/WO2006085514A1/ja active Application Filing
- 2006-02-07 EP EP06713169A patent/EP1848043A4/en not_active Withdrawn
- 2006-02-07 US US11/815,759 patent/US8124985B2/en active Active
- 2006-02-07 CN CN2006800043424A patent/CN101116192B/zh not_active Expired - Fee Related
- 2006-02-07 KR KR1020077017887A patent/KR20070104384A/ko not_active Application Discontinuation
- 2006-02-08 TW TW095104235A patent/TW200701521A/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US8124985B2 (en) | 2012-02-28 |
JP2006253647A (ja) | 2006-09-21 |
EP1848043A4 (en) | 2011-11-30 |
CN101116192A (zh) | 2008-01-30 |
TW200701521A (en) | 2007-01-01 |
KR20070104384A (ko) | 2007-10-25 |
CN101116192B (zh) | 2011-04-06 |
TWI377696B (ja) | 2012-11-21 |
WO2006085514A1 (ja) | 2006-08-17 |
US20100019257A1 (en) | 2010-01-28 |
EP1848043A1 (en) | 2007-10-24 |
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