JP2007134415A - 窒化物半導体発光素子及び窒化物半導体発光素子製造方法 - Google Patents
窒化物半導体発光素子及び窒化物半導体発光素子製造方法 Download PDFInfo
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- JP2007134415A JP2007134415A JP2005324000A JP2005324000A JP2007134415A JP 2007134415 A JP2007134415 A JP 2007134415A JP 2005324000 A JP2005324000 A JP 2005324000A JP 2005324000 A JP2005324000 A JP 2005324000A JP 2007134415 A JP2007134415 A JP 2007134415A
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- nitride semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 126
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 116
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000926 separation method Methods 0.000 claims abstract description 39
- 238000005530 etching Methods 0.000 claims abstract description 31
- 230000001681 protective effect Effects 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 66
- 230000006866 deterioration Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 131
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 48
- 229910002601 GaN Inorganic materials 0.000 description 46
- 229910052594 sapphire Inorganic materials 0.000 description 36
- 239000010980 sapphire Substances 0.000 description 36
- 239000007789 gas Substances 0.000 description 14
- 238000000605 extraction Methods 0.000 description 13
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- 239000012535 impurity Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000004927 fusion Effects 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- RYZCLUQMCYZBJQ-UHFFFAOYSA-H lead(2+);dicarbonate;dihydroxide Chemical compound [OH-].[OH-].[Pb+2].[Pb+2].[Pb+2].[O-]C([O-])=O.[O-]C([O-])=O RYZCLUQMCYZBJQ-UHFFFAOYSA-H 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001361 White metal Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 238000000227 grinding Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- 239000010969 white metal Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Semiconductor Lasers (AREA)
Abstract
【解決手段】n型窒化物半導体層2には、p側から見て活性層3を越えた領域に段差Aが形成されている。この段差Aの部分まで、保護絶縁膜6によりn型窒化物半導体層2の一部、活性層3、p型窒化物半導体層4、p電極5の側面とp電極5の上側一部にかけて覆われている。チップ側面を保護絶縁膜6で覆う構造とすることで、チップ分離用やレーザーリフトオフ用の分離溝をエッチングにより形成する場合、活性層3等が、長時間エッチングガスに曝されることがない。
【選択図】 図1
Description
2 n型窒化物半導体層
3 活性層
4 p型窒化物半導体層
5 p電極
6 保護絶縁膜
7 導電性融着層
8 支持基板
9 保護絶縁膜
10 反射膜
Claims (5)
- 少なくともn側電極、n型窒化物半導体層、発光領域、p型窒化物半導体層、p側電極とを順に備えた窒化物半導体発光素子において、前記発光領域よりもn側電極側に段差を有し、前記p側電極から段差位置まで積層方向に沿って第1保護絶縁膜が形成されていることを特徴とする窒化物半導体発光素子。
- 前記第1保護絶縁膜は、前記n型窒化物半導体層及びp型窒化物半導体層よりも小さな屈折率を有することを特徴とする窒化物半導体発光素子。
- 前記第1保護絶縁膜の外側に、該第1保護絶縁膜よりも屈折率の小さい第2保護絶縁膜が形成されていることを特徴とする請求項1又は請求項2のいずれか1項に記載の窒化物半導体発光素子。
- 成長用基板上に少なくともn型窒化物半導体層、発光領域、p型窒化物半導体層とを順に備え、これら半導体層を分離する分離溝をp型窒化物半導体層から成長用基板に達するまでエッチングにより形成する窒化物半導体発光素子製造方法において、前記発光領域を越えた位置までエッチングを行い第1分離溝を形成した後エッチングを停止し、前記第1分離溝の深さまで積層方向に第1保護絶縁膜を形成した後、エッチングにより前記第1分離溝をさらに伸ばして前記成長用基板に達する第2分離溝を形成することを特徴とする窒化物半導体発光素子製造方法。
- 前記第2分離溝を形成した後に、前記成長用基板と対向するように支持基板を成長層の上側と接合し、その後前記成長用基板を分離することを特徴とする請求項4記載の窒化物半導体発光素子製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005324000A JP5016808B2 (ja) | 2005-11-08 | 2005-11-08 | 窒化物半導体発光素子及び窒化物半導体発光素子製造方法 |
US12/084,634 US8004006B2 (en) | 2005-11-08 | 2006-11-07 | Nitride semiconductor light emitting element |
EP06832425A EP1956663A1 (en) | 2005-11-08 | 2006-11-07 | Nitride semiconductor light emitting element and method for producing nitride semiconductor light emitting element |
TW095141194A TW200802964A (en) | 2005-11-08 | 2006-11-07 | Nitride semiconductor light-emitting element and its manufacturing method |
PCT/JP2006/322175 WO2007055202A1 (ja) | 2005-11-08 | 2006-11-07 | 窒化物半導体発光素子及び窒化物半導体発光素子製造方法 |
KR1020087012226A KR20080065666A (ko) | 2005-11-08 | 2006-11-07 | 질화물 반도체 발광 소자 및 질화물 반도체 발광 소자 제조방법 |
CNA200680041787XA CN101305478A (zh) | 2005-11-08 | 2006-11-07 | 氮化物半导体发光元件以及氮化物半导体发光元件制造方法 |
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JP2005324000A JP5016808B2 (ja) | 2005-11-08 | 2005-11-08 | 窒化物半導体発光素子及び窒化物半導体発光素子製造方法 |
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Publication Number | Publication Date |
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JP2007134415A true JP2007134415A (ja) | 2007-05-31 |
JP5016808B2 JP5016808B2 (ja) | 2012-09-05 |
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JP2005324000A Active JP5016808B2 (ja) | 2005-11-08 | 2005-11-08 | 窒化物半導体発光素子及び窒化物半導体発光素子製造方法 |
Country Status (7)
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US (1) | US8004006B2 (ja) |
EP (1) | EP1956663A1 (ja) |
JP (1) | JP5016808B2 (ja) |
KR (1) | KR20080065666A (ja) |
CN (1) | CN101305478A (ja) |
TW (1) | TW200802964A (ja) |
WO (1) | WO2007055202A1 (ja) |
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WO2008153130A1 (ja) * | 2007-06-15 | 2008-12-18 | Rohm Co., Ltd. | 窒化物半導体発光素子及び窒化物半導体の製造方法 |
JP2009231560A (ja) * | 2008-03-24 | 2009-10-08 | Stanley Electric Co Ltd | 半導体発光素子の製造方法 |
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Also Published As
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US20090294784A1 (en) | 2009-12-03 |
EP1956663A1 (en) | 2008-08-13 |
WO2007055202A1 (ja) | 2007-05-18 |
CN101305478A (zh) | 2008-11-12 |
TW200802964A (en) | 2008-01-01 |
US8004006B2 (en) | 2011-08-23 |
KR20080065666A (ko) | 2008-07-14 |
JP5016808B2 (ja) | 2012-09-05 |
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