JP4872663B2 - 接合用材料及び接合方法 - Google Patents
接合用材料及び接合方法 Download PDFInfo
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- JP4872663B2 JP4872663B2 JP2006353649A JP2006353649A JP4872663B2 JP 4872663 B2 JP4872663 B2 JP 4872663B2 JP 2006353649 A JP2006353649 A JP 2006353649A JP 2006353649 A JP2006353649 A JP 2006353649A JP 4872663 B2 JP4872663 B2 JP 4872663B2
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Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/102—Metallic powder coated with organic material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
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Description
100μm以下の金属粒子を混ぜた場合よりも、有機溶媒中において平均粒径が100
nm以下の表面が有機物で被覆された金属粒子との分散性がよくなるためである。また、平均粒径が100nmから100μm以下の金属粒子としては、表面が有機物で被覆された平均粒径が100nm以下の金属粒子を凝集させたものとしても良い。この場合、平均粒径が100nm以下の金属粒子を被覆する有機物と、平均粒径が100nmから100μm以下の金属粒子を被覆する有機物とが同種の材料となるため、より有機溶媒中での分散性を向上することができる。ここで、金属粒子の凝集体の形状としては、球状,楕円状,三角,四角、などをはじめ金属粒子同士がランダムに融合するためにさまざまな形状を取ることが可能であり、その形状は上記に限定されることはない。ここで、平均粒径が1以上100nm以下の金属粒子が凝集した凝集体の粒径としては、10nm以上100
μm以下であることがよい。
100nm以下の金属微粒子を予め凝集させておく方法はこれに限定されることはない。
40℃以上としたのは、それより下の温度では金属粒子表面を被覆している有機物を飛ばすのに、あまりにも時間がかかりすぎてしまうためである。また、加熱と加圧を加える時間は60分以下とした。加熱と加圧時間を60分以上とすると、一つの製品を作製するのにあまりにも多くの時間がかかり、大量生産を行うことが難しくなるからである。
実施例1ではヘキシルアミンを、実施例2ではオクチルアミンを、比較例1ではデシルアミンを、比較例2ではラウリルアミンを表面に被覆した銀粒子を用いた。
(No5C)を用いてろ過を行い、未反応の硝酸銀,アスコルビン酸の除去を行った。さらに、ろ過をして得られた、表面がヘキシルアミンで被覆された平均粒径100nm以下の銀粒子を有するトルエン溶液に約200mLのアセトン溶液を加え、上記銀粒子を沈殿させて上澄み液を取り除き、銀粒子に被覆していない過剰なヘキシルアミン及び合成時に出来た副生成物を取り除くことで、精製を行った。この工程を全部で3回行った。この工程を繰り返すことで、銀粒子を被覆している有機物も取り除くことが可能で、平均粒径が100nm以下の銀粒子の凝集を進め、平均粒径が100nm以上の凝集体を作製することが出来る。これは銀表面を被覆している有機物はその炭素数が少なくなると、粒子間距離が小さくなり、銀粒子同士が接触しやすくなること、また、揮発温度も低下するために銀粒子表面から外れやすくなることから炭素数が多い場合と比較すると凝集しやすくなるためである。さらに、得られた銀粒子を湯浴の温度を40℃程度にしたエバポレーターで有機溶媒を蒸発させた後、2.5gの粉末を得た。溶液状態から粉末状態にすることで、より凝集を進めることが可能となる。その後、トルエン溶液に再分散させ、ヘキシルアミンで表面を被覆された銀粒子が分散した溶液を得た。実施例2では、オクチルアミンを有機物として用いて実施例1と同様の工程を行いトルエン溶液に分散した銀粒子溶液を得た。一方、比較例1と2でも、それぞれデシルアミンとラウリルアミンを有機物として用いて実施例1と同様の工程を得てトルエン溶液に分散した銀粒子溶液を得た。このようにして得られた実施例1,2及び比較例1,2の粒子に対して粒度分布測定を行った結果が表1のものである。これら4種類の金属粒子が分散したトルエン溶液は表1のような粒径分布を有し、図1に示したような熱分解特性を有する有機物を表面に被覆した銀粒子溶液である。
図4は本発明の実施例の一つである非絶縁型半導体装置の構造を示した図である。図4(a)は上面図、図4(b)は図4(a)A−A′部の断面図である。半導体素子
(MOSFET)301をセラミックス絶縁基板302上に、セラミックス絶縁基板302をベース材303上にそれぞれ搭載した後、エポキシ系樹脂ケース304,ボンディングワイヤ305,エポキシ系樹脂ふた306を設け、同一ケース内にシリコーンゲル樹脂
307を充填した。ここで、ベース材303上のセラミックス絶縁基板302は実施例1の平均粒径100μm以下の銀粒子表面がヘキシルアミンで被覆され、体積基準における粒度分布において100nm以下では7.6nmと15.2nmに粒径のピークを、100nm以上では0.3437μm に粒径のピークを有し、これらをトルエンに対して80
wt%の濃度で分散されたペースト材で構成された接合層308で接合され、セラミックス絶縁基板302の銅板302a上には8個のSiからなるMOSFET素子301も上記ペースト材で構成された接合層309で接合されている。上記ペースト材で構成された接合層308及び309による接合は、先ず、セラミックス絶縁基板302の銅板302a
(Niめっきが施されている)上、及びベース材303上に上記ペースト材を銅板302a(Niめっきが施されている)上とベース材303上にそれぞれ塗布する。
310の間は、直径300μmのAl線からなるボンディングワイヤ305を用い超音波接合法によりワイヤボンディングした。311は温度検出用サーミスタ素子で、上記ペースト材で構成された接合層309で構成され、電極302と端子310との間を直径300μmのAl線からなるボンディングワイヤ305でワイヤボンディングし外部へ連絡されている。
310には穴310′がそれぞれ設けられ、絶縁型半導体装置1000を外部回路と接続するためのネジ(図示せず)が装着されるようになっている。端子310はあらかじめ所定形状に打抜き、成形された銅板にNiめっきを施したものであり、エポキシ系樹脂ケース304に取り付けられている。
Niめっきが施してある。ベース材303上には前記実施例1の平均粒径100μm以下の銀粒子表面がヘキシルアミンで被覆され、体積基準における粒度分布において100
nm以下では7.6nmと15.2nm に粒径のピークを、100nm以上では0.344μmに粒径のピークを有し、これらをトルエンに対して80wt%の濃度で分散されたペースト層によりセラミックス絶縁基板302を、そしてセラミックス絶縁基板302上にも上記ペースト材による層によりMOSFET素子301がそれぞれ搭載されている。
図7は本発明を用いた非絶縁型半導体装置における他の実施例の一つを示した図である。
nm以上では2.75μm に粒径のピークを有する銀粒子を80wt%の濃度でトルエンに分散したペースト材により接合されている。半導体素子のエミッタ電極も接合端子731を介しセラミックス絶縁基板上に形成された表面AuおよびNiめっきを施した銅配線
702bも上記ペースト材粒子による接合層を介して接続されている。
701と絶縁基板配線702bとの接続が完了する。絶縁型半導体装置においてはコレクタ電極だけではなくエミッタ電極部分にも大きな電流が流れるため、配線幅の大きい接続端子731を用いることによりエミッタ電極側の接続信頼性をさらに向上させることが可能になる。
図9は実施例3と同様の非絶縁型半導体装置の構造を示した図である。本実施例では、実施例3のボンディングワイヤ305にかえてクリップ状の接続端子505を用いた。
310の間は、クリップ状の接続端子505を用いて実施例1のヘキシルアミンで表面を被覆された平均粒径100μm以下の銀粒子にて、体積基準における粒度分布で100
nm以下で7.6nmと15.2nm に粒径のピークを、100nm以上では2.75μmに粒径のピークを有する銀粒子を80wt%の濃度でトルエンに分散したペースト材の上に置き、上記クリップ状端子505に対して、0.5MPa程度の荷重を掛けながら250℃において2分間加熱を行うことにより接続を行っている。
本実施例ではセルラー電話機等の送信部に用いる高周波電力増幅装置としての絶縁型半導体装置について説明する。
100の一方の主面上に厚膜配線パターン(Ag−1wt%Pt、厚さ15μm)104が設けられ、この厚膜配線パターン104上にはチップ抵抗101,チップコンデンサ
102を含むチップ部品が実施例2の平均粒径100μm以下の銀粒子表面がオクチルアミンで被覆され、体積基準における粒度分布において100nm以下では7.6nmと
15.2nmに粒径のピークを、100nm以上では2.75μmに粒径のピークを有し、これらをトルエンに対して80wt%の濃度で分散されたペースト材を厚膜配線パターン上に塗布し、チップ部品に対して0.5MPa の荷重を300℃において5分間加えることにより、焼結銀層105により導電的に固着されている。MOSFET素子(Si、
3.5ppm/℃)1は、多層ガラスセラミックス基板100の一方の主面に設けた凹みの部分に中間金属部材103を介して搭載される。搭載は10のマイナス3乗の真空中で行った。中間金属部材103のサイズは2.8mm×2.2mm×0.2mmである。ここで、MOSFET素子1と中間金属部材103を接続する焼結銀層105や、中間金属部材103と多層ガラスセラミックス基板100を接続する接合層106は、いずれも上記実施例2の接合材料をトルエンに対して80wt%の濃度で分散させた接合材料を用いて接合された層である。MOSFET素子1と厚膜配線パターン104の所定部間には、Cuからなるクリップ型の接続端子107も上記接合材料を用いて接合されている。このとき、クリップには0.1MPa の荷重を300℃において2分間加えることにより接合を行った。多層ガラスセラミックス基板100の他方の主面には、厚膜外部電極層104′(Ag−1wt%Pt、厚さ15μm)が設けられている。厚膜外部電極層104′は多層ガラスセラミックス基板100の内部に設けられた内部配線層やスルーホール配線を中継して厚膜配線パターン104と電気的に接続されている。多層ガラスセラミックス基板100の一方の主面側にはエポキシ樹脂層108が設けられ、これにより搭載チップ部品等は封止されている。
本発明ではミニモールド型トランジスタ用のリードフレームとして複合材を適用した非絶縁型半導体装置について説明する。
Cu−Cu2O複合材からなるリードフレーム(厚さ0.3mm)600に実施例1のヘキシルアミンで表面を被覆された平均粒径100μm以下の銀粒子にて、体積基準における粒度分布で100nm以下で7.6nmと15.2nmに粒径のピークを、100nm以上では2.75μm に粒径のピークを有する銀粒子を80wt%の濃度でトルエンに分散したペースト材で構成された接合層を塗布した後、300℃において1.0MPa の荷重の下、2分間加熱を行うことにより、焼結銀層601により接合されている。トランジスタ素子1のコレクタは上記接合用材料を用いて接合された側に配置されている。エミッタ及びベースは上記接合材料により接合された側と反対側に設けられ、トランジスタ素子1から引出されたクリップ形状の端子602によりリードフレーム600に上記接合用材料を塗布し、クリップ形状の端子に1.0MPa の荷重を250℃において2分間加えることにより接合されている。また、トランジスタ素子1の搭載とクリップ形状の端子602が施された主要部は、トランスファモールドによってエポキシ樹脂603で覆われている。リードフレーム600はエポキシ樹脂603によるモールドが完了した段階で切り離され、それぞれ独立した端子としての機能が付与される。
LEDを基板に実装する際に本発明の接合用材料を用いて接合を行うことで、従来の半田や熱伝導性接着材よりも放熱性を向上させることが可能になる。
302,402 セラミックス絶縁基板
302a,302b 銅板(電極)
303,403 ベース材
304 エポキシ系樹脂ケース
305 ボンディングワイヤ
306 エポキシ系樹脂ふた
307 シリコーンゲル樹脂
308,309 接合層
310 端子
311 温度検出用サーミスタ素子
402a,402b 配線
431 接合端子
Claims (9)
- 平均粒径が100μm以下の金属粒子を有する接合用材料であって、
前記金属粒子は粒径100nm以下の粒子と、粒径100nm以下の粒子が凝集した平均粒径が100nmから100μmの凝集体を含み、
前記粒径100nm以下の粒子および平均粒径が100nmから100μmの凝集体は炭素数が2以上8以下の有機物で被覆されており、
100nm以下及び100nmから100μm以下の体積基準における粒度分布でそれぞれ1つ以上のピークを有する接合用材料。 - 前記金属粒子は金,銀,銅からなることを特徴とする請求項1に記載の接合用材料。
- 前記有機物が、酸素,窒素,硫黄原子を含むことを特徴とする請求項1に記載の接合用材料。
- 前記有機物が、アルコール基,アミノ基,カルボキシル基,カルボニル基,アルデヒド基,スルファニル基のうち少なくとも一つ以上を含むことを特徴とする請求項1に記載の接合用材料。
- 粒径100nm以下の粒子の割合が前記金属粒子中の重量wt%において、0.001 より大きく100より小さいことを特徴とする請求項1に記載の接合用材料。
- 前記金属粒子が有機溶媒中に分散されていることを特徴とする請求項1に記載の接合用材料。
- 前記凝集体の粒径が10nm以上100μm以下であることを特徴とする請求項1に記載の接合用材料。
- 電子部品の電極と配線基板の回路配線とを電気的に接合する接合方法において、100nm以下及び100nmから100μm以下の体積基準における粒度分布でそれぞれ1つ以上のピークを有し、炭素数が2以上8以下の有機物で被覆された粒径100nm以下の粒子と粒径100nm以下の粒子が凝集した平均粒径が100nmから100μmの凝集体を有する平均粒径が100μm以下の金属粒子を含む接合用材料を、前記回路配線上の前記電極との接合面に塗布し、前記溶液が塗布された回路配線上に電子部品を搭載した後、加熱及び加圧により電子部品の電極と配線基板の回路配線とを接合することを特徴とする接合方法。
- 前記加熱温度が40℃以上400℃以下であることを特徴とする請求項8に記載の接
合方法。
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US8821676B2 (en) | 2014-09-02 |
US7955411B2 (en) | 2011-06-07 |
US20120104618A1 (en) | 2012-05-03 |
US20080173398A1 (en) | 2008-07-24 |
JP2008161907A (ja) | 2008-07-17 |
US20110204125A1 (en) | 2011-08-25 |
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