JP4844168B2 - 部品接合方法および部品積層方法 - Google Patents
部品接合方法および部品積層方法 Download PDFInfo
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- JP4844168B2 JP4844168B2 JP2006051729A JP2006051729A JP4844168B2 JP 4844168 B2 JP4844168 B2 JP 4844168B2 JP 2006051729 A JP2006051729 A JP 2006051729A JP 2006051729 A JP2006051729 A JP 2006051729A JP 4844168 B2 JP4844168 B2 JP 4844168B2
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- adhesive layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
Description
図1、図2、図3、図4,図5,図6は本発明の実施の形態1の部品接合方法の工程説明図である。ここに示す部品接合においては、表面にポリイミドやガラスエポキシなど樹脂層を有する基板に、熱硬化性の接着層が予め形成された半導体部品を熱圧着により接合して実装する。
いる。なお第2の半導体部品23を第1の半導体部品13上に積層した状態において第1の半導体部品13を対象としたワイヤボンディングの妨げとならないように、第2の半導体部品23の外形寸法は第1の半導体部品13よりも一回り小さく設定されている。
図7,図8,図9,図10は本発明の実施の形態2の部品積層方法の工程説明図である。この部品積層方法においては、一方の面に樹脂層を有し他方の面に熱硬化性の接着層を有する複数の部品を、基板5上において積層するものである。本実施の形態2では、2つの半導体部品を、スペーサ24を介して積層する例を示している。
から、半硬化状態の接着層26cは樹脂表面24cで速やかに流動して樹脂板24aと良好に密着する。
5 基板
9 部品実装装置
12 部品保持ノズル
13 第1の半導体部品(第1の部品)
14 キュア炉
15、25 2層積層体
13a、23a、26a 半導体チップ
13b、23b、26b 樹脂層
13c、23c、26c 接着層
23 第2の半導体部品
24 スペーサ(第2の部品)
26 第3の半導体部品
27 3層積層体
Claims (2)
- 表面に樹脂層を有する基板に熱硬化性の接着層を有する半導体部品を前記接着層を介して接合する部品接合方法であって、
プラズマ処理によって前記樹脂層の表面改質を行い、
部品保持ノズルによって前記半導体部品を保持し、
表面改質された前記樹脂層に前記接着層を当接させ、
前記接着層を加熱手段によって加熱して熱硬化させ、
前記接着層が完全に熱硬化する前に、前記部品保持ノズルを前記半導体部品から離隔させ、
前記離隔をさせても、前記接着層と前記樹脂層が密着していることから前記半導体部品の剥離や位置ずれが生じないことを特徴とする部品接合方法。 - 一方の面に樹脂層を有し他方の面に熱硬化性の接着層を有し少なくとも第1の部品および第2の部品を含む複数の部品を基板上において積層する部品積層方法であって、
前記基板に前記第1の部品を搭載し、
プラズマ処理によって前記第1の部品の樹脂層の表面改質を行い、
部品保持ノズルによって前記第2の部品を保持し、
表面改質された前記第1の部品の樹脂層に前記第2の部品の接着層を当接させ、
前記第2の部品の接着層を加熱手段によって加熱して熱硬化させ、
前記第2の部品の接着層が完全に熱硬化する前に、前記部品保持ノズルを前記第2の部品から離隔させ、
前記離隔をさせても、前記接着層と前記樹脂層が密着していることから前記第2の部品の剥離や位置ずれが生じないことを特徴とする部品積層方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006051729A JP4844168B2 (ja) | 2006-02-28 | 2006-02-28 | 部品接合方法および部品積層方法 |
CN200780007045XA CN101395707B (zh) | 2006-02-28 | 2007-02-09 | 部件层叠方法 |
PCT/JP2007/052409 WO2007099759A1 (ja) | 2006-02-28 | 2007-02-09 | 部品接合方法、部品積層方法および部品接合構造体 |
KR1020087018230A KR20080106168A (ko) | 2006-02-28 | 2007-02-09 | 부품 접합 방법, 부품 적층 방법, 및 부품 접합 구조체 |
US12/280,615 US8614118B2 (en) | 2006-02-28 | 2007-02-09 | Component bonding method, component laminating method and bonded component structure |
TW096106701A TW200741910A (en) | 2006-02-28 | 2007-02-27 | Method of bonding part, method of stacking part, and structure including part bonded |
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JP2006051729A JP4844168B2 (ja) | 2006-02-28 | 2006-02-28 | 部品接合方法および部品積層方法 |
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JP2007234713A JP2007234713A (ja) | 2007-09-13 |
JP4844168B2 true JP4844168B2 (ja) | 2011-12-28 |
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Country Status (6)
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US (1) | US8614118B2 (ja) |
JP (1) | JP4844168B2 (ja) |
KR (1) | KR20080106168A (ja) |
CN (1) | CN101395707B (ja) |
TW (1) | TW200741910A (ja) |
WO (1) | WO2007099759A1 (ja) |
Families Citing this family (7)
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US20100151114A1 (en) * | 2008-12-17 | 2010-06-17 | Zimmer, Inc. | In-line treatment of yarn prior to creating a fabric |
JP5419226B2 (ja) * | 2010-07-29 | 2014-02-19 | 日東電工株式会社 | フリップチップ型半導体裏面用フィルム及びその用途 |
US20120109301A1 (en) | 2010-11-03 | 2012-05-03 | Zimmer, Inc. | Modified Polymeric Materials And Methods Of Modifying Polymeric Materials |
US10649497B2 (en) * | 2014-07-23 | 2020-05-12 | Apple Inc. | Adaptive processes for improving integrity of surfaces |
WO2016014047A1 (en) | 2014-07-23 | 2016-01-28 | Apple Inc. | Adaptive processes for improving integrity of surfaces |
US10083896B1 (en) | 2017-03-27 | 2018-09-25 | Texas Instruments Incorporated | Methods and apparatus for a semiconductor device having bi-material die attach layer |
USD953183S1 (en) | 2019-11-01 | 2022-05-31 | Nvent Services Gmbh | Fuel sensor |
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JPS61185994A (ja) * | 1985-02-13 | 1986-08-19 | 信越化学工業株式会社 | 耐熱性フレキシブルプリント配線用基板およびその製造方法 |
EP1448033A1 (en) * | 1996-12-27 | 2004-08-18 | Matsushita Electric Industrial Co., Ltd. | Method and device for mounting electronic component on a circuit board |
JP3012575B2 (ja) * | 1997-10-03 | 2000-02-21 | 九州日本電気株式会社 | Loc型半導体装置の製造方法 |
JP3427702B2 (ja) * | 1997-11-12 | 2003-07-22 | 松下電器産業株式会社 | 電子部品のプラズマ処理装置 |
JPH11251335A (ja) * | 1998-03-04 | 1999-09-17 | Oki Electric Ind Co Ltd | 半導体素子の実装装置及びその実装方法 |
JP4240711B2 (ja) | 1999-12-27 | 2009-03-18 | 日立化成工業株式会社 | ダイボンディング用接着フィルム及び半導体装置の製造方法 |
AU776266C (en) * | 2000-01-31 | 2006-01-05 | Diagnoswiss S.A. | Method for fabricating micro-structures with various surface properties in multilayer body by plasma etching |
JP2003264205A (ja) * | 2002-03-08 | 2003-09-19 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP4067507B2 (ja) * | 2003-03-31 | 2008-03-26 | 三洋電機株式会社 | 半導体モジュールおよびその製造方法 |
JP4705748B2 (ja) * | 2003-05-30 | 2011-06-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2005251779A (ja) * | 2004-03-01 | 2005-09-15 | Mitsui Chemicals Inc | 接着フィルムおよびそれを用いた半導体装置 |
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2007
- 2007-02-09 US US12/280,615 patent/US8614118B2/en active Active
- 2007-02-09 CN CN200780007045XA patent/CN101395707B/zh active Active
- 2007-02-09 KR KR1020087018230A patent/KR20080106168A/ko active IP Right Grant
- 2007-02-09 WO PCT/JP2007/052409 patent/WO2007099759A1/ja active Application Filing
- 2007-02-27 TW TW096106701A patent/TW200741910A/zh unknown
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TW200741910A (en) | 2007-11-01 |
JP2007234713A (ja) | 2007-09-13 |
US8614118B2 (en) | 2013-12-24 |
CN101395707B (zh) | 2013-04-24 |
KR20080106168A (ko) | 2008-12-04 |
WO2007099759A1 (ja) | 2007-09-07 |
US20090035892A1 (en) | 2009-02-05 |
CN101395707A (zh) | 2009-03-25 |
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