JP4762041B2 - 不揮発性半導体メモリ - Google Patents
不揮発性半導体メモリ Download PDFInfo
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- JP4762041B2 JP4762041B2 JP2006119416A JP2006119416A JP4762041B2 JP 4762041 B2 JP4762041 B2 JP 4762041B2 JP 2006119416 A JP2006119416 A JP 2006119416A JP 2006119416 A JP2006119416 A JP 2006119416A JP 4762041 B2 JP4762041 B2 JP 4762041B2
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- 239000004065 semiconductor Substances 0.000 title claims description 31
- 230000015654 memory Effects 0.000 claims description 75
- 238000002955 isolation Methods 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 17
- 239000010410 layer Substances 0.000 description 111
- 239000000758 substrate Substances 0.000 description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- 229920005591 polysilicon Polymers 0.000 description 23
- 238000009792 diffusion process Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- 230000008878 coupling Effects 0.000 description 17
- 238000010168 coupling process Methods 0.000 description 17
- 238000005859 coupling reaction Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000012212 insulator Substances 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- UAJUXJSXCLUTNU-UHFFFAOYSA-N pranlukast Chemical group C=1C=C(OCCCCC=2C=CC=CC=2)C=CC=1C(=O)NC(C=1)=CC=C(C(C=2)=O)C=1OC=2C=1N=NNN=1 UAJUXJSXCLUTNU-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- MFHHXXRRFHXQJZ-UHFFFAOYSA-N NONON Chemical group NONON MFHHXXRRFHXQJZ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 241000272168 Laridae Species 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42336—Gate electrodes for transistors with a floating gate with one gate at least partly formed in a trench
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
- H01L21/28141—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects insulating part of the electrode is defined by a sidewall spacer, e.g. dummy spacer, or a similar technique, e.g. oxidation under mask, plating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- Non-Volatile Memory (AREA)
Description
本発明の例は、フローティングゲートの形状が凸形の2つのメモリセルを対象とし、両メモリセルのフローティングゲートが最も近接する領域に低い誘電率を持つ1種類の絶縁体を満たし、その他の領域に高い誘電率を持つ誘電体を配置する点に特徴を有する。
NAND型フラッシュメモリを例に実施の形態を説明する。
図1は、NAND型フラッシュメモリの全体図を示している。
まず、参考例について説明する。
図7は、第1実施の形態に関わるNAND型フラッシュメモリのメモリセルアレイのレイアウトを示している。図8は、図7のVIII−VIII線に沿う断面、図9は、図7のIX−IX線に沿う断面、図10は、図7のX−X線に沿う断面をそれぞれ示している。
図12は、第2実施の形態に関わるNAND型フラッシュメモリのメモリセルアレイのレイアウトを示している。図13は、図12のXIII−XIII線に沿う断面、図14は、図12のXIV−XIV線に沿う断面、図15は、図12のXV−XV線に沿う断面をそれぞれ示している。
図19は、第3実施の形態に関わるNAND型フラッシュメモリのメモリセルアレイのレイアウトを示している。図20は、図19のXX−XX線に沿う断面、図21は、図19のXXI−XXI線に沿う断面、図22は、図19のXXII−XXII線に沿う断面をそれぞれ示している。
本発明の例に関わる不揮発性半導体メモリの製造方法を説明する。
第1実施の形態に関し、IPD膜は、フローティングゲートに接触する部分に薄い高誘電率の誘電体が配置されていても、フローティングゲート間の大部分が低誘電率の誘電体に満たされていれば、本発明の効果を得ることができる。
本発明の例によれば、新規なデバイス構造により、セル間干渉効果による閾値変動なく、カップリング比を向上できる。
Claims (5)
- フローティングゲート、コントロールゲート及びそれらの間のゲート間絶縁層を備えるスタックゲート構造を有し、前記コントロールゲートが延びる方向に隣接する第1及び第2メモリセルを具備し、
前記第1及び第2のメモリセルのフローティングゲートは、それぞれ、第1部分と、前記第1部分上に配置され、前記コントロールゲートが延びる方向における幅が前記第1部分のそれよりも狭い第2部分とから構成され、
前記第1部分は、ストライプ状の素子分離絶縁層の間に配置され、前記素子分離絶縁層の上面は、前記第1部分の上面よりも低い位置に存在し、
前記ゲート間絶縁層は、前記フローティングゲートの上面、側面及び前記素子分離絶縁層の上面に沿うように形成され、前記フローティングゲート上の第1層と、前記第1層上の第2層とを備え、前記第2層の誘電率は、前記第1層及び前記素子分離絶縁層の誘電率よりも高く、
前記第1及び第2メモリセルの前記第1部分の間の第1スペースには、前記素子分離絶縁層及び前記第1層が満たされ、前記第1及び第2メモリセルの前記第2部分の間の第2スペースには、前記第1及び第2層が配置される
ことを特徴とする不揮発性半導体メモリ。 - 前記第1スペースの上部は、前記ゲート間絶縁層を構成する前記第1及び第2層を含む複数の絶縁層のうち最も誘電率が低い前記第1層により満たされることを特徴とする請求項1に記載の不揮発性半導体メモリ。
- 前記素子分離絶縁層及び前記第1層は、同じ材料から形成されることを特徴とする請求項1又は2に記載の不揮発性半導体メモリ。
- 前記ゲート間絶縁層は、前記第2層上の第3層を備えることを特徴とする請求項1乃至3のいずれか1項に記載の不揮発性半導体メモリ。
- 前記第1部分は、前記素子分離絶縁層上にも配置されることを特徴とする請求項1乃至4のいずれか1項に記載の不揮発性半導体メモリ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006119416A JP4762041B2 (ja) | 2006-04-24 | 2006-04-24 | 不揮発性半導体メモリ |
US11/687,758 US7982259B2 (en) | 2006-04-24 | 2007-03-19 | Nonvolatile semiconductor memory |
KR1020070039372A KR100878088B1 (ko) | 2006-04-24 | 2007-04-23 | 불휘발성 반도체 메모리 |
US13/007,258 US8637915B2 (en) | 2006-04-24 | 2011-01-14 | Nonvolatile semiconductor memory |
US13/430,153 US8324679B2 (en) | 2006-04-24 | 2012-03-26 | Nonvolatile semiconductor memory |
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JP2006119416A JP4762041B2 (ja) | 2006-04-24 | 2006-04-24 | 不揮発性半導体メモリ |
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Publication Number | Publication Date |
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JP2007294595A JP2007294595A (ja) | 2007-11-08 |
JP4762041B2 true JP4762041B2 (ja) | 2011-08-31 |
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JP2006119416A Expired - Fee Related JP4762041B2 (ja) | 2006-04-24 | 2006-04-24 | 不揮発性半導体メモリ |
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Country | Link |
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US (3) | US7982259B2 (ja) |
JP (1) | JP4762041B2 (ja) |
KR (1) | KR100878088B1 (ja) |
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JP4762041B2 (ja) * | 2006-04-24 | 2011-08-31 | 株式会社東芝 | 不揮発性半導体メモリ |
JP4829015B2 (ja) * | 2006-06-20 | 2011-11-30 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7667260B2 (en) * | 2006-08-09 | 2010-02-23 | Micron Technology, Inc. | Nanoscale floating gate and methods of formation |
TW200908230A (en) * | 2007-08-13 | 2009-02-16 | Nanya Technology Corp | Non-volatile memory and manufacturing method thereof |
US20090100659A1 (en) * | 2007-09-26 | 2009-04-23 | Radovan Soumar | Trailer wheel locking pin retractor |
JP2009135373A (ja) * | 2007-12-03 | 2009-06-18 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP5361328B2 (ja) | 2008-10-27 | 2013-12-04 | 株式会社東芝 | 不揮発性半導体記憶装置の製造方法 |
CN102282651A (zh) * | 2009-01-29 | 2011-12-14 | 国际商业机器公司 | 具有非平面浮动栅极的存储器晶体管及其制造方法 |
JP5570953B2 (ja) * | 2010-11-18 | 2014-08-13 | 株式会社東芝 | 不揮発性半導体記憶装置および不揮発性半導体記憶装置の製造方法 |
TWI506768B (zh) * | 2010-12-22 | 2015-11-01 | Powerchip Technology Corp | 非揮發性記憶體及其製造方法 |
US9136128B2 (en) * | 2011-08-31 | 2015-09-15 | Micron Technology, Inc. | Methods and apparatuses including memory cells with air gaps and other low dielectric constant materials |
JP2013197191A (ja) * | 2012-03-16 | 2013-09-30 | Toshiba Corp | 不揮発性半導体記憶装置 |
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US9287280B2 (en) * | 2014-07-09 | 2016-03-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to improve memory cell erasure |
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US8637915B2 (en) | 2014-01-28 |
JP2007294595A (ja) | 2007-11-08 |
US20110108905A1 (en) | 2011-05-12 |
US20080012061A1 (en) | 2008-01-17 |
US7982259B2 (en) | 2011-07-19 |
US20120181598A1 (en) | 2012-07-19 |
KR100878088B1 (ko) | 2009-01-14 |
US8324679B2 (en) | 2012-12-04 |
KR20070104855A (ko) | 2007-10-29 |
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