JP4747185B2 - 電子装置、薄膜トランジスタ構造体及びそれを備える平板ディスプレイ装置 - Google Patents
電子装置、薄膜トランジスタ構造体及びそれを備える平板ディスプレイ装置 Download PDFInfo
- Publication number
- JP4747185B2 JP4747185B2 JP2008120492A JP2008120492A JP4747185B2 JP 4747185 B2 JP4747185 B2 JP 4747185B2 JP 2008120492 A JP2008120492 A JP 2008120492A JP 2008120492 A JP2008120492 A JP 2008120492A JP 4747185 B2 JP4747185 B2 JP 4747185B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- tft
- width
- conductive layers
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 title description 4
- 239000010410 layer Substances 0.000 description 181
- 230000005611 electricity Effects 0.000 description 15
- 230000003068 static effect Effects 0.000 description 15
- 238000005401 electroluminescence Methods 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 8
- 230000002950 deficient Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 1
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 229910001618 alkaline earth metal fluoride Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- -1 polyphenylene Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
プレイ装置には、液晶ディスプレイ装置がある。有機電界発光装置は、上記のように自発光型の装置であることから、バックライトのような別途の発光装置が不要となり、低電力及び高効率の作動が可能であり、青色発光が可能で、近年、注目を浴びている平面ディスプレイ装置である。
M5を通じて有機電界発光素子に伝えられることによって、発光がなされる。
120 バッファ層、
130 半導体活性層、
140 ゲート絶縁層、
150 ゲート電極、
160 中間層、
170 ソース/ドレイン電極、
170a ソース電極、
170b ドレイン電極、
170c 延長部、
180 保護層、
230 第5半導体活性層、
240 第1スキャンライン、
241 ダミー部、
250 第5ゲート電極、
270 第5ソース/ドレイン電極、
270a 第5ソース電極、
270b 第5ドレイン電極、
290 第1電極層、
291 画素定義層、
292 有機電界発光部、
294 画素開口部、
400 第2電極層、
RP 画素層、
RT TFT層、
M1、M5 第1及び第5薄膜トランジスタ、
WC、WW 第1及び第2幅、
AC 交差部、
AW 変動部、
Ws 有効幅、
Wd 有効長、
P1、P2 導電層が交差される位置。
Claims (1)
- 層を異ならせて互いに交差する二層以上の導電層を含む電子装置において、
前記導電層のうち少なくとも何れか一層の導電層は、前記二層以上の導電層が交差する交差部において、長手方向に沿って幅を最大幅Wcから最小幅Wwに異ならせる幅変動部を備え、
前記交差部における前記幅変動部の幅変動比Ww/Wcは1より小さく、前記幅変動部の外郭線の同一平面上の任意の二つの地点をつなぐ線分と、前記幅変動部を備える導電層の長手方向の線分との間の角度は、90°未満であり、前記外郭線に形成されたコーナは、ラウンド構造であることを特徴とする電子装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040050445A KR100563067B1 (ko) | 2004-06-30 | 2004-06-30 | 박막 트랜지스터 구조체 및 이를 구비하는 평판디스플레이 장치 |
KR10-2004-0050446 | 2004-06-30 | ||
KR1020040050446A KR100563068B1 (ko) | 2004-06-30 | 2004-06-30 | 박막 트랜지스터 구조체 및 이를 구비하는 평판디스플레이 장치 |
KR10-2004-0050445 | 2004-06-30 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005188971A Division JP4216270B2 (ja) | 2004-06-30 | 2005-06-28 | 電子装置、薄膜トランジスタ構造体及びそれを備える平板ディスプレイ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008287253A JP2008287253A (ja) | 2008-11-27 |
JP4747185B2 true JP4747185B2 (ja) | 2011-08-17 |
Family
ID=34979857
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005188971A Active JP4216270B2 (ja) | 2004-06-30 | 2005-06-28 | 電子装置、薄膜トランジスタ構造体及びそれを備える平板ディスプレイ装置 |
JP2008120492A Active JP4747185B2 (ja) | 2004-06-30 | 2008-05-02 | 電子装置、薄膜トランジスタ構造体及びそれを備える平板ディスプレイ装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005188971A Active JP4216270B2 (ja) | 2004-06-30 | 2005-06-28 | 電子装置、薄膜トランジスタ構造体及びそれを備える平板ディスプレイ装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7709839B2 (ja) |
EP (2) | EP1612864B1 (ja) |
JP (2) | JP4216270B2 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100570977B1 (ko) * | 2003-10-14 | 2006-04-13 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 |
WO2007011061A1 (en) | 2005-07-22 | 2007-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI280073B (en) * | 2005-09-15 | 2007-04-21 | Au Optronics Corp | Organic light emitting diode display panel |
JP4800125B2 (ja) * | 2006-06-28 | 2011-10-26 | オンセミコンダクター・トレーディング・リミテッド | 半導体集積回路装置とその製造方法 |
KR100836472B1 (ko) | 2007-03-22 | 2008-06-09 | 삼성에스디아이 주식회사 | 반도체장치 및 그 제조방법 |
KR101174881B1 (ko) * | 2010-06-11 | 2012-08-17 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 그 제조 방법 |
US20120286402A1 (en) * | 2011-05-12 | 2012-11-15 | Chin-Te Kuo | Protuberant structure and method for making the same |
US8912547B2 (en) * | 2012-01-20 | 2014-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, display device, and semiconductor device |
CN103515941B (zh) * | 2012-06-21 | 2015-12-02 | 京东方科技集团股份有限公司 | 静电放电保护电路、阵列基板和显示装置 |
US9082870B2 (en) * | 2013-03-13 | 2015-07-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus of packaging semiconductor devices |
FR3006578B1 (fr) * | 2013-06-07 | 2015-05-29 | Sofradim Production | Prothese a base d’un textile pour voie laparoscopique |
CN110515248B (zh) * | 2015-10-16 | 2022-12-13 | 群创光电股份有限公司 | 显示装置 |
CN112566351B (zh) * | 2019-09-10 | 2023-02-17 | 群创光电股份有限公司 | 电子装置 |
CN113917735B (zh) * | 2021-11-22 | 2023-11-10 | 京东方科技集团股份有限公司 | 一种发光装置、背光源以及显示装置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02236278A (ja) | 1986-07-14 | 1990-09-19 | Res Dev Corp Of Japan | 超微紛体の超薄膜被覆法 |
US4801999A (en) * | 1987-07-15 | 1989-01-31 | Advanced Micro Devices, Inc. | Integrated circuit lead frame assembly containing voltage bussing and distribution to an integrated circuit die using tape automated bonding with two metal layers |
US5014110A (en) * | 1988-06-03 | 1991-05-07 | Mitsubishi Denki Kabushiki Kaisha | Wiring structures for semiconductor memory device |
JP2714993B2 (ja) | 1989-12-15 | 1998-02-16 | セイコーエプソン株式会社 | 液晶表示装置 |
JPH055896A (ja) * | 1991-06-28 | 1993-01-14 | Sharp Corp | アクテイブマトリクス表示装置 |
JP2762820B2 (ja) | 1992-02-21 | 1998-06-04 | 株式会社日立製作所 | 薄膜トランジスタマトリクス及びそれを用いた液晶表示装置 |
JPH05259300A (ja) * | 1992-03-13 | 1993-10-08 | Sony Corp | 半導体装置 |
JP3507117B2 (ja) * | 1993-02-26 | 2004-03-15 | キヤノン株式会社 | Tft基板及び該基板を有する液晶表示装置 |
JP2901499B2 (ja) | 1994-07-20 | 1999-06-07 | 日本電気株式会社 | アクティブマトリクス基板 |
US5684365A (en) | 1994-12-14 | 1997-11-04 | Eastman Kodak Company | TFT-el display panel using organic electroluminescent media |
EP0791186A1 (en) | 1995-09-11 | 1997-08-27 | Flat Panel Display Co. Fpd | Liquid crystal display device |
US6014191A (en) | 1996-07-16 | 2000-01-11 | Samsung Electronics Co., Ltd. | Liquid crystal display having repair lines that cross data lines twice and cross gate lines in the active area and related repairing methods |
JP4112672B2 (ja) * | 1998-04-08 | 2008-07-02 | 東芝松下ディスプレイテクノロジー株式会社 | 表示装置用アレイ基板及びその製造方法 |
DE19908428C2 (de) * | 1999-02-26 | 2000-12-07 | Siemens Ag | Halbleiterspeicheranordnung mit Bitleitungs-Twist |
KR100346045B1 (ko) * | 1999-10-25 | 2002-07-24 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터 액정표시장치용 어레이기판 제조방법 |
JP2001343669A (ja) * | 2000-06-02 | 2001-12-14 | Hitachi Ltd | 液晶表示装置 |
US6559904B1 (en) * | 2000-11-01 | 2003-05-06 | Lg Philips Lcd Co, Ltd. | Liquid crystal display with high aperture ratio |
KR100370286B1 (ko) * | 2000-12-29 | 2003-01-29 | 삼성에스디아이 주식회사 | 전압구동 유기발광소자의 픽셀회로 |
JP2003140188A (ja) * | 2001-11-07 | 2003-05-14 | Hitachi Ltd | 液晶表示装置 |
JP4004781B2 (ja) | 2001-11-21 | 2007-11-07 | シャープ株式会社 | アクティブマトリクス表示装置 |
JP4067090B2 (ja) | 2002-10-03 | 2008-03-26 | シャープ株式会社 | Tft基板およびその製造方法 |
-
2005
- 2005-06-28 JP JP2005188971A patent/JP4216270B2/ja active Active
- 2005-06-29 EP EP05105813.9A patent/EP1612864B1/en active Active
- 2005-06-29 EP EP10185618A patent/EP2287913A3/en not_active Withdrawn
- 2005-06-30 US US11/170,161 patent/US7709839B2/en active Active
-
2008
- 2008-01-23 US US12/018,575 patent/US7705356B2/en active Active
- 2008-05-02 JP JP2008120492A patent/JP4747185B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US7705356B2 (en) | 2010-04-27 |
JP2008287253A (ja) | 2008-11-27 |
US7709839B2 (en) | 2010-05-04 |
JP4216270B2 (ja) | 2009-01-28 |
US20060006417A1 (en) | 2006-01-12 |
US20080128701A1 (en) | 2008-06-05 |
EP2287913A2 (en) | 2011-02-23 |
EP1612864B1 (en) | 2015-06-24 |
EP1612864A3 (en) | 2006-05-10 |
EP1612864A2 (en) | 2006-01-04 |
JP2006018283A (ja) | 2006-01-19 |
EP2287913A3 (en) | 2012-05-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4747185B2 (ja) | 電子装置、薄膜トランジスタ構造体及びそれを備える平板ディスプレイ装置 | |
KR100573149B1 (ko) | 전계 발광 디스플레이 장치 및 이의 제조 방법 | |
JP4206388B2 (ja) | 平板ディスプレイ装置 | |
JP4208854B2 (ja) | 電界発光ディスプレイ装置及びその製造方法 | |
US7705359B2 (en) | Electronic device, thin film transistor structure and flat panel display having the same | |
KR100553745B1 (ko) | 평판표시장치 | |
JP2005049808A (ja) | 平板表示装置 | |
KR20110080905A (ko) | 유기 발광 표시 장치 | |
KR20070056304A (ko) | 유기 발광 표시장치 및 이의 제조 방법 | |
KR20080016129A (ko) | 유기 발광 표시 장치 | |
KR100683679B1 (ko) | 유기 발광 소자 | |
KR100563067B1 (ko) | 박막 트랜지스터 구조체 및 이를 구비하는 평판디스플레이 장치 | |
KR100683678B1 (ko) | 유기 발광 소자 | |
KR100563068B1 (ko) | 박막 트랜지스터 구조체 및 이를 구비하는 평판디스플레이 장치 | |
KR100683675B1 (ko) | 유기 발광 소자 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20081201 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090331 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090630 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090818 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091217 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20100115 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20100205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110324 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110516 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140520 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4747185 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140520 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140520 Year of fee payment: 3 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140520 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |