JP4642726B2 - 液浸リソグラフィ方法及びそのシステム - Google Patents
液浸リソグラフィ方法及びそのシステム Download PDFInfo
- Publication number
- JP4642726B2 JP4642726B2 JP2006280557A JP2006280557A JP4642726B2 JP 4642726 B2 JP4642726 B2 JP 4642726B2 JP 2006280557 A JP2006280557 A JP 2006280557A JP 2006280557 A JP2006280557 A JP 2006280557A JP 4642726 B2 JP4642726 B2 JP 4642726B2
- Authority
- JP
- Japan
- Prior art keywords
- immersion liquid
- immersion
- stage
- conductive
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 38
- 238000000671 immersion lithography Methods 0.000 title claims description 30
- 238000007654 immersion Methods 0.000 claims description 65
- 239000007788 liquid Substances 0.000 claims description 62
- 239000010410 layer Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 29
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 16
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 14
- 239000001569 carbon dioxide Substances 0.000 claims description 14
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 239000011247 coating layer Substances 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 3
- 239000012530 fluid Substances 0.000 description 23
- 230000008569 process Effects 0.000 description 16
- 230000005611 electricity Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000003068 static effect Effects 0.000 description 10
- 239000002253 acid Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 239000007853 buffer solution Substances 0.000 description 8
- 229910019142 PO4 Inorganic materials 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 7
- 239000010452 phosphate Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 6
- 239000007990 PIPES buffer Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 5
- IHPYMWDTONKSCO-UHFFFAOYSA-N 2,2'-piperazine-1,4-diylbisethanesulfonic acid Chemical compound OS(=O)(=O)CCN1CCN(CCS(O)(=O)=O)CC1 IHPYMWDTONKSCO-UHFFFAOYSA-N 0.000 description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 4
- SEQKRHFRPICQDD-UHFFFAOYSA-N N-tris(hydroxymethyl)methylglycine Chemical compound OCC(CO)(CO)[NH2+]CC([O-])=O SEQKRHFRPICQDD-UHFFFAOYSA-N 0.000 description 4
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 4
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 102000004169 proteins and genes Human genes 0.000 description 3
- 108090000623 proteins and genes Proteins 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 2
- UZMAPBJVXOGOFT-UHFFFAOYSA-N Syringetin Natural products COC1=C(O)C(OC)=CC(C2=C(C(=O)C3=C(O)C=C(O)C=C3O2)O)=C1 UZMAPBJVXOGOFT-UHFFFAOYSA-N 0.000 description 2
- 239000007997 Tricine buffer Substances 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 2
- 229910001632 barium fluoride Inorganic materials 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 239000007998 bicine buffer Substances 0.000 description 2
- OWMVSZAMULFTJU-UHFFFAOYSA-N bis-tris Chemical compound OCCN(CCO)C(CO)(CO)CO OWMVSZAMULFTJU-UHFFFAOYSA-N 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- KCFYHBSOLOXZIF-UHFFFAOYSA-N dihydrochrysin Natural products COC1=C(O)C(OC)=CC(C2OC3=CC(O)=CC(O)=C3C(=O)C2)=C1 KCFYHBSOLOXZIF-UHFFFAOYSA-N 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 239000012266 salt solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- -1 H + Chemical class 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000006094 Zerodur Substances 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- VTVVPPOHYJJIJR-UHFFFAOYSA-N carbon dioxide;hydrate Chemical compound O.O=C=O VTVVPPOHYJJIJR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229940089960 chloroacetate Drugs 0.000 description 1
- FOCAUTSVDIKZOP-UHFFFAOYSA-M chloroacetate Chemical compound [O-]C(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-M 0.000 description 1
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 description 1
- 229940106681 chloroacetic acid Drugs 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000002563 ionic surfactant Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
本発明のもう一つの目的は、静電気を効果的に除去し、液浸リソグラフィシステム内の汚染粒子が静電気によりウェーハ表面に付着しないようにして、汚染粒子がウェーハに欠陥を発生させたり収率を低減させたりすることを防ぐ液浸リソグラフィ方法及びそのシステムを提供することにある。
図1は、本発明の一実施形態による液浸リソグラフィシステム100の基板110に液浸リソグラフィ工程を行う状態を示す模式図である。
110 基板
120 レジスト層
130 レンズシステム
140 液浸液保持モジュール
142 液浸液入口
144 液浸液出口
146 接地構造
150 液浸液
160 イオンシャワー装置
164 接地構造
170 ステージ
172 導電構造
180 導電性流体供給システム
182 タンク
184 フローコントローラ
186 二酸化炭素源
Claims (7)
- リソグラフィシステムのステージ上に、レジスト層が上に塗布された基板を載置する工程と、
前記基板と対物レンズモジュールの間に、液浸液を提供する工程と、
露光工程でイオンシャワーによりイオンを加える前記液浸液の導電性を増大させる工程と、
照射エネルギーを前記液浸液に通し、前記レジスト層を露光し、前記液浸液の導電率を増大させることにより、前記液浸液の静電気放電レベルを低減させる工程とを含み、前記導電性液浸液の導電率は10−5S/mよりも高いことを特徴とする、液浸リソグラフィ方法。 - 前記液浸液を提供する工程は、前記液浸液に電圧を印加するステップを含むことを特徴とする、請求項1に記載の液浸リソグラフィ方法。
- 前記ステージは、パターニングされた導電塗布層に形成されて前記ステージ上に一体化された導電構造を備えることを特徴とする、請求項1に記載の液浸リソグラフィ方法。
- 前面を有する対物レンズモジュールと、
前記対物レンズモジュールの前記前面下に配置されたステージと、
前記前面と前記ステージ上の基板との間の空間を少なくとも部分的に充満させる液浸液保持モジュールと、
静電気放電レベルを低減させ、イオンを解放するイオンシャワー装置を有する放電素子とを備え、
前記液浸液保持モジュールに、導電率が10−5S/mよりも高い導電性液浸液が用いられることを特徴とする、液浸リソグラフィシステム。 - 前記放電素子は、前記ステージ上に一体化された導電構造を有することを特徴とする請求項4に記載の液浸リソグラフィシステム。
- 前記放電素子は、前記ステージ及び前記液浸液保持モジュールのうちの少なくともいずれか一つと一体化された接地構造を有することを特徴とする、請求項4に記載の液浸リソグラフィシステム。
- 脱イオン水へ二酸化炭素を入れる二酸化炭素溶液の発生装置をさらに備えることを特徴とする、請求項4に記載の液浸リソグラフィシステム。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/251,330 US7420188B2 (en) | 2005-10-14 | 2005-10-14 | Exposure method and apparatus for immersion lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007165852A JP2007165852A (ja) | 2007-06-28 |
JP4642726B2 true JP4642726B2 (ja) | 2011-03-02 |
Family
ID=37947309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006280557A Active JP4642726B2 (ja) | 2005-10-14 | 2006-10-13 | 液浸リソグラフィ方法及びそのシステム |
Country Status (6)
Country | Link |
---|---|
US (1) | US7420188B2 (ja) |
JP (1) | JP4642726B2 (ja) |
KR (1) | KR100823633B1 (ja) |
CN (1) | CN1949082B (ja) |
NL (1) | NL1032675C2 (ja) |
TW (1) | TWI348077B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101466533B1 (ko) * | 2005-04-25 | 2014-11-27 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치 및 액체 공급 방법 |
NL1036187A1 (nl) * | 2007-12-03 | 2009-06-04 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
JP5482784B2 (ja) | 2009-03-10 | 2014-05-07 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
WO2011155529A1 (ja) * | 2010-06-10 | 2011-12-15 | 株式会社ニコン | 計測部材、ステージ装置、露光装置、露光方法、及びデバイス製造方法 |
US8937703B2 (en) * | 2010-07-14 | 2015-01-20 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
JP5740287B2 (ja) * | 2011-11-09 | 2015-06-24 | 富士フイルム株式会社 | パターン形成方法、及び、電子デバイスの製造方法 |
CN104181776B (zh) * | 2014-07-28 | 2016-04-13 | 浙江大学 | 浸没式光刻机流体控制***的模块化工作流程控制方法 |
US9588446B2 (en) | 2015-05-29 | 2017-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Calibration apparatus and an adjustment method for a lithography apparatus |
JP2019529970A (ja) * | 2016-09-09 | 2019-10-17 | エーエスエムエル ホールディング エヌ.ブイ. | リソグラフィ装置及びサポート構造背景 |
US10418316B1 (en) | 2018-04-04 | 2019-09-17 | Advanced Semiconductor Engineering, Inc. | Semiconductor substrate, semiconductor package structure and method of manufacturing a semiconductor device |
CN110231725B (zh) * | 2019-05-20 | 2022-03-08 | 深圳市华星光电半导体显示技术有限公司 | 一种微影玻璃薄化的方法及其控制*** |
WO2021094057A1 (en) * | 2019-11-14 | 2021-05-20 | Asml Netherlands B.V. | Substrate support, lithographic apparatus, method for manipulating charge distribution and method for preparing a substrate |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005031824A1 (ja) * | 2003-09-29 | 2005-04-07 | Nikon Corporation | 投影露光装置、投影露光方法およびデバイス製造方法 |
JP2005183693A (ja) * | 2003-12-19 | 2005-07-07 | Canon Inc | 露光装置 |
JP2007013180A (ja) * | 2005-06-29 | 2007-01-18 | Qimonda Ag | 液浸リソグラフィシステム用液体 |
JP2008530789A (ja) * | 2005-02-10 | 2008-08-07 | エーエスエムエル ネザーランズ ビー.ブイ. | 液浸液、露光装置および露光方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
US6507474B1 (en) * | 2000-06-19 | 2003-01-14 | Advanced Micro Devices, Inc. | Using localized ionizer to reduce electrostatic charge from wafer and mask |
JP2005101498A (ja) * | 2003-03-04 | 2005-04-14 | Tokyo Ohka Kogyo Co Ltd | 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法 |
US7317504B2 (en) * | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI245163B (en) * | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7304715B2 (en) * | 2004-08-13 | 2007-12-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7327439B2 (en) * | 2004-11-16 | 2008-02-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101220613B1 (ko) * | 2004-12-01 | 2013-01-18 | 가부시키가이샤 니콘 | 스테이지 장치 및 노광 장치 |
-
2005
- 2005-10-14 US US11/251,330 patent/US7420188B2/en not_active Expired - Fee Related
-
2006
- 2006-09-29 CN CN2006101524156A patent/CN1949082B/zh active Active
- 2006-10-03 TW TW095136760A patent/TWI348077B/zh not_active IP Right Cessation
- 2006-10-12 KR KR1020060099304A patent/KR100823633B1/ko active IP Right Grant
- 2006-10-13 NL NL1032675A patent/NL1032675C2/nl active Search and Examination
- 2006-10-13 JP JP2006280557A patent/JP4642726B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005031824A1 (ja) * | 2003-09-29 | 2005-04-07 | Nikon Corporation | 投影露光装置、投影露光方法およびデバイス製造方法 |
JP2005183693A (ja) * | 2003-12-19 | 2005-07-07 | Canon Inc | 露光装置 |
JP2008530789A (ja) * | 2005-02-10 | 2008-08-07 | エーエスエムエル ネザーランズ ビー.ブイ. | 液浸液、露光装置および露光方法 |
JP2007013180A (ja) * | 2005-06-29 | 2007-01-18 | Qimonda Ag | 液浸リソグラフィシステム用液体 |
Also Published As
Publication number | Publication date |
---|---|
KR100823633B1 (ko) | 2008-04-21 |
TWI348077B (en) | 2011-09-01 |
NL1032675A1 (nl) | 2007-04-17 |
TW200715070A (en) | 2007-04-16 |
US7420188B2 (en) | 2008-09-02 |
CN1949082A (zh) | 2007-04-18 |
KR20070041352A (ko) | 2007-04-18 |
US20070085034A1 (en) | 2007-04-19 |
CN1949082B (zh) | 2012-03-28 |
JP2007165852A (ja) | 2007-06-28 |
NL1032675C2 (nl) | 2008-05-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4642726B2 (ja) | 液浸リソグラフィ方法及びそのシステム | |
TWI436403B (zh) | A cleaning method, a substrate processing method, an exposure apparatus, and an element manufacturing method | |
US7602471B2 (en) | Apparatus and method for particle monitoring in immersion lithography | |
US20060164617A1 (en) | Projection exposure apparatus, projection exposure method, and method for producing device | |
JP2008252117A (ja) | リソグラフィ装置 | |
US20070023709A1 (en) | Light source apparatus, exposure apparatus and device fabrication method | |
JPWO2006051909A1 (ja) | 露光方法、デバイス製造方法、及び基板 | |
US20060001851A1 (en) | Immersion photolithography system | |
US7666576B2 (en) | Exposure scan and step direction optimization | |
US20070177119A1 (en) | Exposure apparatus and device manufacturing method | |
JP2005244015A (ja) | 露光装置、露光装置の光学素子の光洗浄方法、及び微細パターンを有するデバイスの製造方法 | |
JP4486945B2 (ja) | 液浸リソグラフィ方法及びその装置 | |
JP2005268358A (ja) | ミラーの洗浄装置及び照明光学装置 | |
TW202141201A (zh) | 導管系統、輻射源、微影裝置及其方法 | |
US8268541B2 (en) | Mask and blank storage inner gas | |
WO2002065183A1 (fr) | Barillet de lentille, dispositif d'exposition et procede de fabrication de ce dispositif | |
JP2005244016A (ja) | 露光装置、露光方法、及び微細パターンを有するデバイスの製造方法 | |
KR100802008B1 (ko) | 이머션 리소그래피 장치 및 방법 | |
KR100406583B1 (ko) | 감광막 물질의 증발에 의한 렌즈 오염을 방지할 수 있는노광 장치 | |
US6291135B1 (en) | Ionization technique to reduce defects on next generation lithography mask during exposure | |
JP2005072076A (ja) | 露光装置及びケミカルフィルタ並びにデバイスの製造方法 | |
Yamabe et al. | Meeting the challenges of 157-nm microstepper technology | |
JPH11195576A (ja) | 露光装置 | |
US20090273766A1 (en) | Apparatus and method for exposure and method of manufacturing device | |
JP2006210604A (ja) | 露光装置、露光方法、および微細パターンを有するデバイスの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070411 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20091016 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091022 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100118 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100121 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100222 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100225 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100323 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100415 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100816 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100924 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20101008 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101117 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101201 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4642726 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131210 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |