JP4589295B2 - 薄膜トランジスタ及びその製造方法 - Google Patents
薄膜トランジスタ及びその製造方法 Download PDFInfo
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- JP4589295B2 JP4589295B2 JP2006319499A JP2006319499A JP4589295B2 JP 4589295 B2 JP4589295 B2 JP 4589295B2 JP 2006319499 A JP2006319499 A JP 2006319499A JP 2006319499 A JP2006319499 A JP 2006319499A JP 4589295 B2 JP4589295 B2 JP 4589295B2
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- 239000010409 thin film Substances 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000010410 layer Substances 0.000 claims description 73
- 239000010408 film Substances 0.000 claims description 55
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
- 239000002094 self assembled monolayer Substances 0.000 claims description 17
- 239000013545 self-assembled monolayer Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 5
- 150000002367 halogens Chemical class 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 238000000034 method Methods 0.000 description 28
- 230000008569 process Effects 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 238000005224 laser annealing Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000001282 organosilanes Chemical class 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002431 hydrogen Chemical group 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Description
Claims (7)
- 基板を提供するステップと、
前記基板上に非晶質シリコン層を形成するステップと、
前記非晶質シリコン層上に除去可能な有機膜を形成するステップと、
前記有機膜上にレーザーを照射して、非晶質シリコン層を結晶化して多結晶シリコン層を形成するステップと、
前記有機膜を除去するステップとを含み、
前記有機膜は、シラン基を含む自己組織化単分子膜であることを特徴とする薄膜トランジスタの製造方法。
- 前記自己組織化単分子膜は、X−Y−Zの化学式を有し、Xが、水素又はメチル基であり、Yが、直鎖又は分枝鎖のC4〜C50基であり、Zが、ハロゲン元素を含むシラン基であることを特徴とする請求項1に記載の薄膜トランジスタの製造方法。
- 前記自己組織化単分子膜は、オクタデシルトリクロロシラン(OTS)又はモノアルキルトリクロロシラン(MTS)を含むことを特徴とする請求項1に記載の薄膜トランジスタの製造方法。
- 前記有機膜の厚さは、1〜10nmの範囲である請求項1に記載の薄膜トランジスタの製造方法。
- 前記有機膜を除去するステップは、有機膜上に紫外線を照射した後、純水又はアルコールで洗浄して前記有機膜を除去する請求項1に記載の薄膜トランジスタの製造方法。
- 前記基板上に非晶質シリコン層を形成するステップの前又は有機膜を除去するステップの後、ゲート電極及びゲート絶縁膜を形成するステップを含む請求項1に記載の薄膜トランジスタの製造方法。
- 前記多結晶シリコン層に不純物イオンを注入して、チャネル領域、ソース領域、及びドレイン領域を画定するステップと、
ソース領域及びドレイン領域と電気的に接続するソース電極及びドレイン電極を形成するステップと
をさらに含む請求項6に記載の薄膜トランジスタの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060022625A KR101169058B1 (ko) | 2006-03-10 | 2006-03-10 | 박막 트랜지스터 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
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JP2007243147A JP2007243147A (ja) | 2007-09-20 |
JP4589295B2 true JP4589295B2 (ja) | 2010-12-01 |
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JP2006319499A Active JP4589295B2 (ja) | 2006-03-10 | 2006-11-28 | 薄膜トランジスタ及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7960295B2 (ja) |
JP (1) | JP4589295B2 (ja) |
KR (1) | KR101169058B1 (ja) |
CN (1) | CN101034669B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101094285B1 (ko) | 2009-12-04 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 박막트랜지스터 및 이를 포함하는 표시장치 |
TWI570809B (zh) * | 2011-01-12 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
JPWO2012153365A1 (ja) * | 2011-05-10 | 2014-07-28 | パナソニック株式会社 | 薄膜トランジスタ装置の製造方法、薄膜トランジスタ装置および表示装置 |
US9318506B2 (en) | 2011-07-08 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN103189990A (zh) * | 2011-10-28 | 2013-07-03 | 松下电器产业株式会社 | 薄膜半导体器件及其制造方法 |
NL2010527A (en) | 2013-03-27 | 2014-09-30 | Asml Netherlands Bv | Object holder, lithographic apparatus, device manufacturing method, and method of manufacturing an object holder. |
KR102421600B1 (ko) * | 2015-11-20 | 2022-07-18 | 삼성디스플레이 주식회사 | 터치 센싱 유닛, 표시 장치 및 터치 센싱 유닛의 제조 방법 |
CN117334560A (zh) | 2016-03-03 | 2024-01-02 | 应用材料公司 | 利用间歇性空气-水暴露的改良自组装单层阻挡 |
KR20180128515A (ko) | 2016-04-25 | 2018-12-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 자기-조립 단분자층 프로세스들을 위한 화학물질 전달 챔버 |
US10358715B2 (en) | 2016-06-03 | 2019-07-23 | Applied Materials, Inc. | Integrated cluster tool for selective area deposition |
CN107195636B (zh) * | 2017-05-12 | 2020-08-18 | 惠科股份有限公司 | 显示面板、显示面板的制程和显示装置 |
KR20210149031A (ko) * | 2020-05-27 | 2021-12-08 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 3d 메모리 디바이스 |
Citations (1)
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US6162667A (en) * | 1994-03-28 | 2000-12-19 | Sharp Kabushiki Kaisha | Method for fabricating thin film transistors |
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CN1088002A (zh) * | 1992-11-16 | 1994-06-15 | 东京电子株式会社 | 制造液晶显示器基板及评价半导体晶体的方法与装置 |
JP3973960B2 (ja) | 1994-06-02 | 2007-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US5536932A (en) * | 1995-02-10 | 1996-07-16 | Xerox Corporation | Polysilicon multiplexer for two-dimensional image sensor arrays |
KR100300808B1 (ko) | 1995-08-04 | 2001-11-22 | 순페이 야마자끼 | 결정질 반도체 제조 방법 |
US6696538B2 (en) * | 1999-07-27 | 2004-02-24 | Lg Chemical Ltd. | Semiconductor interlayer dielectric material and a semiconductor device using the same |
TW452892B (en) * | 2000-08-09 | 2001-09-01 | Lin Jing Wei | Re-crystallization method of polysilicon thin film of thin film transistor |
JP2002176180A (ja) * | 2000-12-06 | 2002-06-21 | Hitachi Ltd | 薄膜半導体素子及びその製造方法 |
TW574753B (en) * | 2001-04-13 | 2004-02-01 | Sony Corp | Manufacturing method of thin film apparatus and semiconductor device |
US6656398B2 (en) * | 2001-06-19 | 2003-12-02 | Corning Incorporated | Process of making a pattern in a film |
JP3939140B2 (ja) * | 2001-12-03 | 2007-07-04 | 株式会社日立製作所 | 液晶表示装置 |
CN100568457C (zh) * | 2003-10-02 | 2009-12-09 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
KR100742380B1 (ko) * | 2005-12-28 | 2007-07-24 | 삼성에스디아이 주식회사 | 마스크 패턴, 박막 트랜지스터의 제조 방법 및 이를사용하는 유기 전계 발광 표시 장치의 제조 방법 |
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- 2006-03-10 KR KR1020060022625A patent/KR101169058B1/ko active IP Right Grant
- 2006-09-29 US US11/540,155 patent/US7960295B2/en active Active
- 2006-10-08 CN CN2006101418602A patent/CN101034669B/zh active Active
- 2006-11-28 JP JP2006319499A patent/JP4589295B2/ja active Active
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Patent Citations (1)
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US6162667A (en) * | 1994-03-28 | 2000-12-19 | Sharp Kabushiki Kaisha | Method for fabricating thin film transistors |
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Publication number | Publication date |
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US20110198604A1 (en) | 2011-08-18 |
US7960295B2 (en) | 2011-06-14 |
KR20070092457A (ko) | 2007-09-13 |
CN101034669A (zh) | 2007-09-12 |
US20070210313A1 (en) | 2007-09-13 |
US8530901B2 (en) | 2013-09-10 |
JP2007243147A (ja) | 2007-09-20 |
KR101169058B1 (ko) | 2012-07-26 |
CN101034669B (zh) | 2010-05-12 |
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