JP4587003B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4587003B2 JP4587003B2 JP2008174352A JP2008174352A JP4587003B2 JP 4587003 B2 JP4587003 B2 JP 4587003B2 JP 2008174352 A JP2008174352 A JP 2008174352A JP 2008174352 A JP2008174352 A JP 2008174352A JP 4587003 B2 JP4587003 B2 JP 4587003B2
- Authority
- JP
- Japan
- Prior art keywords
- impurity region
- region
- well
- type
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 72
- 239000012535 impurity Substances 0.000 claims description 173
- 239000000758 substrate Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 21
- 238000005468 ion implantation Methods 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 9
- 210000000746 body region Anatomy 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 59
- 238000002955 isolation Methods 0.000 description 28
- 230000015556 catabolic process Effects 0.000 description 21
- 108091006146 Channels Proteins 0.000 description 12
- 238000000926 separation method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
第1導電型の半導体基板と、
前記半導体基板に設けられた、第2導電型のウェルと、
前記ウェルに設けられた、第1導電型の第1不純物領域と、
前記ウェルに設けられ、かつ、前記第1不純物領域の周囲に、前記第1不純物領域と離間して設けられた第2導電型の第2不純物領域と、
前記ウェルの周囲に設けられ、かつ、前記第2不純物領域と離間して設けられた第1導電型の第3不純物領域と、
を有し、
前記ウェルは、前記第2不純物領域よりも不純物濃度が小さく、かつ、前記第1不純物領域、前記第2不純物領域、および前記第3不純物領域よりも前記半導体基板の厚み方向に深く形成され、
前記第1不純物領域および前記第2不純物領域の間の最小の間隔は、前記第2不純物領域および前記第3不純物領域の間の最小の間隔よりも小さい。
前記第1不純物領域は、LDMOSのボディ領域を構成することができる。
前記第1不純物領域は、オフセットドレインMOSのドリフト領域を構成することができる。
前記第2不純物領域の外周の少なくとも一部は、前記ウェルの外周よりも外側に存在することができる。
前記ウェルは、ドライブイン拡散法によって形成され、
前記第1不純物領域、前記第2不純物領域および前記第3不純物領域は、高エネルギーイオン注入法によって形成されたレトログレイドウェルであることができる。
Claims (5)
- 第1導電型の半導体基板内に設けられた、第2導電型のウェルと、
前記ウェル内に設けられ、ボディ領域を構成する第1導電型の第1不純物領域と、
少なくとも一部が前記ウェル内に設けられてドレイン領域を構成し、かつ、前記第1不純物領域を取り囲むように前記第1不純物領域と離間して設けられた第2導電型の第2不純物領域と、
前記ウェルを取り囲むように設けられ、かつ、前記第2不純物領域と離間して設けられた第1導電型の第3不純物領域と、
を有し、
前記ウェルは、前記第1不純物領域、前記第2不純物領域、および前記第3不純物領域よりも前記半導体基板の厚み方向に深く形成され、
前記第1不純物領域および前記第2不純物領域の間の最小の間隔は、前記第2不純物領域および前記第3不純物領域の間の最小の間隔よりも小さい、半導体装置。 - 第1導電型の半導体基板内に設けられた、第2導電型のウェルと、
前記ウェル内に設けられ、ドレイン領域を構成する第1導電型の第1不純物領域と、
少なくとも一部が前記ウェル内に設けられてゲート領域の一部を構成し、かつ、前記第1不純物領域を取り囲むように前記第1不純物領域と離間して設けられた第2導電型の第2不純物領域と、
前記ウェルを取り囲むように設けられ、かつ、前記第2不純物領域と離間して設けられた第1導電型の第3不純物領域と、
を有し、
前記ウェルは、前記第1不純物領域、前記第2不純物領域、および前記第3不純物領域よりも前記半導体基板の厚み方向に深く形成され、
前記第1不純物領域および前記第2不純物領域の間の最小の間隔は、前記第2不純物領域および前記第3不純物領域の間の最小の間隔よりも小さい、半導体装置。 - 請求項1または請求項2に記載の半導体装置において、
前記第2不純物領域の外周の少なくとも一部は、前記ウェルの外周よりも外側に存在する、半導体装置。 - 請求項1ないし請求項3のいずれか1項に記載の半導体装置において、
前記ウェルは、ドライブイン拡散法によって形成され、
前記第1不純物領域、前記第2不純物領域および前記第3不純物領域は、高エネルギーイオン注入法によって形成されたレトログレイドウェルである、半導体装置。 - 請求項1ないし請求項4のいずれか一項に記載の半導体装置において、
前記ウェルの不純物濃度は、前記第2不純物領域の不純物濃度よりも小さい、半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008174352A JP4587003B2 (ja) | 2008-07-03 | 2008-07-03 | 半導体装置 |
US12/492,082 US8330219B2 (en) | 2008-07-03 | 2009-06-25 | Semiconductor device with high-voltage breakdown protection |
US13/670,860 US20130062694A1 (en) | 2008-07-03 | 2012-11-07 | Semiconductor device with high-voltage breakdown protection |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008174352A JP4587003B2 (ja) | 2008-07-03 | 2008-07-03 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010016155A JP2010016155A (ja) | 2010-01-21 |
JP4587003B2 true JP4587003B2 (ja) | 2010-11-24 |
Family
ID=41463708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008174352A Active JP4587003B2 (ja) | 2008-07-03 | 2008-07-03 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (2) | US8330219B2 (ja) |
JP (1) | JP4587003B2 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1401729B1 (it) * | 2010-06-17 | 2013-08-02 | St Microelectronics Srl | Procedimento per la fabbricazione di dispositivi integrati di potenza con corrugazioni superficiali e dispositivo integrato di potenza con corrugazioni superficiali |
JP6027771B2 (ja) * | 2012-05-28 | 2016-11-16 | キヤノン株式会社 | 半導体装置、半導体装置の製造方法及び液体吐出装置 |
US9356045B2 (en) * | 2013-06-10 | 2016-05-31 | Raytheon Company | Semiconductor structure having column III-V isolation regions |
US9917168B2 (en) | 2013-06-27 | 2018-03-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal oxide semiconductor field effect transistor having variable thickness gate dielectric |
TWI566376B (zh) * | 2013-07-22 | 2017-01-11 | 旺宏電子股份有限公司 | 半導體裝置及其製造方法 |
JP6252022B2 (ja) | 2013-08-05 | 2017-12-27 | セイコーエプソン株式会社 | 半導体装置 |
US9136373B2 (en) * | 2013-08-16 | 2015-09-15 | Macronix International Co., Ltd. | Semiconductor device and manufacturing method for the same |
US9269806B2 (en) * | 2013-10-03 | 2016-02-23 | Macronix International Co., Ltd. | Semiconductor device and method of fabricating same |
JP6455023B2 (ja) * | 2014-08-27 | 2019-01-23 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
CN104659079B (zh) * | 2015-01-22 | 2017-12-05 | 上海华虹宏力半导体制造有限公司 | 隔离型nldmos器件及其制造方法 |
JP6651957B2 (ja) * | 2016-04-06 | 2020-02-19 | 株式会社デンソー | 半導体装置およびその製造方法 |
US9899513B1 (en) * | 2016-12-29 | 2018-02-20 | Macronix International Co., Ltd. | Lateral diffused metal oxide semiconductor transistor and manufacturing method thereof |
JP7010100B2 (ja) * | 2017-08-30 | 2022-01-26 | セイコーエプソン株式会社 | モーター駆動回路、半導体装置、及び、電子機器 |
CN108847423B (zh) * | 2018-05-30 | 2022-10-21 | 矽力杰半导体技术(杭州)有限公司 | 半导体器件及其制造方法 |
US11862693B2 (en) * | 2020-08-24 | 2024-01-02 | Globalfoundries Singapore Pte. Ltd. | Semiconductor devices including a drain captive structure having an air gap and methods of forming the same |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11330452A (ja) * | 1998-05-11 | 1999-11-30 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
JP2002110970A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体装置 |
JP2004200359A (ja) * | 2002-12-18 | 2004-07-15 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
JP2005260055A (ja) * | 2004-03-12 | 2005-09-22 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2006210532A (ja) * | 2005-01-26 | 2006-08-10 | Toyota Motor Corp | 半導体装置の製造方法 |
JP2007088334A (ja) * | 2005-09-26 | 2007-04-05 | Rohm Co Ltd | 半導体装置およびその製造方法 |
JP2007535813A (ja) * | 2004-04-30 | 2007-12-06 | フリースケール セミコンダクター インコーポレイテッド | アバランシェを阻止できる大電流mosデバイスおよび動作方法。 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5204541A (en) * | 1991-06-28 | 1993-04-20 | Texas Instruments Incorporated | Gated thyristor and process for its simultaneous fabrication with high- and low-voltage semiconductor devices |
JPH05129425A (ja) | 1991-10-30 | 1993-05-25 | Nec Kansai Ltd | 半導体装置およびその製造方法 |
US7115946B2 (en) * | 2000-09-28 | 2006-10-03 | Kabushiki Kaisha Toshiba | MOS transistor having an offset region |
EP1220323A3 (en) * | 2000-12-31 | 2007-08-15 | Texas Instruments Incorporated | LDMOS with improved safe operating area |
US7719054B2 (en) * | 2006-05-31 | 2010-05-18 | Advanced Analogic Technologies, Inc. | High-voltage lateral DMOS device |
JP2006032493A (ja) * | 2004-07-13 | 2006-02-02 | Sharp Corp | 半導体装置及びその製造方法 |
JP4545548B2 (ja) * | 2004-10-21 | 2010-09-15 | ルネサスエレクトロニクス株式会社 | 半導体集積回路及び半導体装置 |
JP4530823B2 (ja) | 2004-12-02 | 2010-08-25 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
US7781834B2 (en) * | 2007-07-03 | 2010-08-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Robust ESD LDMOS device |
-
2008
- 2008-07-03 JP JP2008174352A patent/JP4587003B2/ja active Active
-
2009
- 2009-06-25 US US12/492,082 patent/US8330219B2/en active Active
-
2012
- 2012-11-07 US US13/670,860 patent/US20130062694A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11330452A (ja) * | 1998-05-11 | 1999-11-30 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
JP2002110970A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体装置 |
JP2004200359A (ja) * | 2002-12-18 | 2004-07-15 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
JP2005260055A (ja) * | 2004-03-12 | 2005-09-22 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2007535813A (ja) * | 2004-04-30 | 2007-12-06 | フリースケール セミコンダクター インコーポレイテッド | アバランシェを阻止できる大電流mosデバイスおよび動作方法。 |
JP2006210532A (ja) * | 2005-01-26 | 2006-08-10 | Toyota Motor Corp | 半導体装置の製造方法 |
JP2007088334A (ja) * | 2005-09-26 | 2007-04-05 | Rohm Co Ltd | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US8330219B2 (en) | 2012-12-11 |
JP2010016155A (ja) | 2010-01-21 |
US20100001345A1 (en) | 2010-01-07 |
US20130062694A1 (en) | 2013-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4587003B2 (ja) | 半導体装置 | |
CN106887452B (zh) | 在半导体装置中的自调式隔离偏置 | |
KR100361602B1 (ko) | 반도체 장치 및 그 제조 방법 | |
TWI438898B (zh) | 自我對準之互補雙擴散金氧半導體 | |
CN105745748B (zh) | 使用低压工艺制造的高压器件 | |
KR20180110703A (ko) | 낮은 소스-드레인 저항을 갖는 반도체 소자 구조 및 그 제조 방법 | |
US7579651B2 (en) | Semiconductor device | |
JP2009088199A (ja) | 半導体装置 | |
JP4584222B2 (ja) | 高耐圧トランジスタの製造方法 | |
JP4308096B2 (ja) | 半導体装置及びその製造方法 | |
JP5307966B2 (ja) | 半導体装置の製造方法 | |
JP2010087133A (ja) | 半導体装置およびその製造方法 | |
KR102255545B1 (ko) | 반도체 장치 및 반도체 장치의 제조 방법 | |
JP2009246225A (ja) | 半導体装置 | |
US6762458B2 (en) | High voltage transistor and method for fabricating the same | |
KR20110078621A (ko) | 반도체 소자 및 그 제조 방법 | |
JP4800566B2 (ja) | 半導体装置及びその製造方法 | |
JP5311003B2 (ja) | 半導体装置 | |
JP2014192361A (ja) | 半導体装置およびその製造方法 | |
JP5172223B2 (ja) | 半導体装置 | |
JP4952042B2 (ja) | 半導体装置 | |
JP2005197287A (ja) | 半導体装置およびその製造方法 | |
US20050017301A1 (en) | Semiconductor device having a diffusion layer and a manufacturing method thereof | |
US9985092B2 (en) | PowerMOS | |
JP2005150300A (ja) | 半導体装置とその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100416 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100428 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100625 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100811 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100824 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4587003 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130917 Year of fee payment: 3 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |