JP4356114B2 - ステージ装置及び露光装置、並びにデバイス製造方法 - Google Patents
ステージ装置及び露光装置、並びにデバイス製造方法 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70766—Reaction force control means, e.g. countermass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- Microelectronics & Electronic Packaging (AREA)
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Description
a. 微動ステージ駆動用のモータの固定子が設けられた固定子キャリアと定盤との間にサイドガイドがあるため、レチクル微動ステージ(レチクル)の非スキャン方向の位置決め時の反力及びヨーイングモーメント、並びに粗動ステージの駆動時に生じるモーメントが、サイドガイドを介して定盤に伝達され、これが定盤の振動要因となり、結果的にレチクルの位置制御精度(位置決め精度を含む)を悪化させていた。
b. レチクル微動ステージ及びレチクル粗動ステージには、電流供給のための配線や、バキュームチャックのための真空排気用の配管及びエアベアリングに対する加圧空気の供給用の配管などが接続されていた。このため、レチクル微動ステージ及びレチクル粗動ステージが移動する際には、上記の配線、配管が引きずられ、それら配線、配管の張力が、結果的にレチクルの位置制御精度(位置決め精度を含む)を悪化させる要因となっていた。
c. レチクル微動ステージ周辺の機械的な振動、熱的要因によるステージ曲げがレチクル微動ステージの位置計測誤差の要因となっていた。一例として、図12(A)に示されるように、レチクル微動ステージRSTに設けられた移動鏡169を介してレチクル微動ステージRST(レチクルR)の位置を測長軸LXを有する干渉計で測定する場合について考える。この場合において、レチクルステージRSTに図12(B)に示されるような変形が生じたものとすると、干渉計によって計測される位置情報にΔMの計測誤差(一種のアッベ誤差)が生じることとなる。なお、図12(A)、図12(B)において、符号CRは、レチクル微動ステージRSTの中立面(曲げ中立面)を示す。
d. さらに、レチクル微動ステージの変形が、移動鏡の変形(曲がり)要因となり、レチクル微動ステージの位置計測精度、ひいては位置制御精度の低下を招いていた。
e. また、特にカウンタマス機構を備えるレチクルステージ装置では、カウンタマス(錘部材)とレチクルステージとの質量比を十分大きく確保することが困難であった。その理由は、上記従来のカウンタマス機構では、カウンタマスはリニアガイドの軸上に重心を配置する必要があるため、カウンタマスの質量を大きくするためには、カウンタマスをリニアガイドの軸方向に延長するか、リニアガイドを中心として軸直交面内で放射方向の距離が一律に大きくなるようにする必要があり、レイアウトの都合上、自ずと制限があるためである。このようにカウンタマス(錘部材)とレチクルステージとの質量比を十分大きく確保することが困難であったことから、カウンタマスのストロークが大きくなり、配管を引きずることの影響や、重心移動による局部的なボディ変形が無視できず、位置制御性の低下の要因となっていた。
f. この他、レチクルステージの周辺部材の配置、形状などが複雑で、その周辺空間は入り組んだ開放空間となっていたため、空調効率が悪く、空気揺らぎ(空気の温度揺らぎ)などによって干渉計計測精度、ひいてはレチクルの位置制御性を悪化させる要因ともなっていた。さらに、F2レーザなどの真空紫外光を露光用照明光として用いる場合には、レチクル周辺においても雰囲気気体を不活性ガスで置換するガスパージを行わなければならないが、上記のレチクルステージの周辺部材の配置、形状などの複雑化のために、その設計が非常に困難なものとなっていた。
《デバイス製造方法》
次に、上述した露光装置をリソグラフィ工程で使用したデバイスの製造方法の実施形態について説明する。
Claims (12)
- 定盤と;
前記定盤の上方に浮上しつつ物体を保持して第1軸及びこれに直交する第2軸を含む2次元面内の3自由度方向に前記定盤に沿って移動可能なスライダと;
前記定盤の上方に浮上しつつ前記2次元面内の3自由度を少なくとも有し、前記スライダを取り囲む枠状部材と;
前記枠状部材に設けられた第1固定子と、該第1固定子と協働して前記スライダを前記第1軸方向に駆動する駆動力を発生する第1可動子とを含む第1駆動機構と;
前記枠状部材に設けられた第2固定子と、前記第2固定子と協働して前記スライダを前記第2軸方向に駆動する駆動力を発生する第2可動子とを含む第2駆動機構と;を備えるステージ装置。 - 請求項1に記載のステージ装置において、
前記第1駆動機構は、少なくとも2つのリニアモータを含み、
前記第2駆動機構は、少なくとも1つのボイスコイルモータを含むことを特徴とするステージ装置。 - 請求項1又は2に記載のステージ装置において、
前記スライダの位置を計測する干渉計システムを更に備え、
前記スライダには、中立面の一部に前記物体の載置面が形成されるとともに、前記干渉計システムからの測長ビームの光路の前記2次元面に直交する第3軸方向の位置が前記中立面の位置に一致していることを特徴とするステージ装置。 - 請求項1〜3のいずれか一項に記載のステージ装置において、
前記スライダの第1軸方向の一側及び他側の端部には第1軸方向に延びる延設部がそれぞれ設けられ、前記一側の延設部から他側の延設部に至る長手方向の全域に渡る気体静圧軸受が形成され、
前記定盤から配管を介さないで前記気体静圧軸受に対して加圧気体が供給されることを特徴とするステージ装置。 - マスクと感光物体とを所定方向に同期移動して前記マスクに形成されたパターンを前記感光物体に転写する露光装置であって、
前記マスクを照明光により照明する照明ユニットと;
前記マスクが前記物体として前記スライダ上に載置される請求項1〜4のいずれか一項に記載のステージ装置と;
前記マスクから射出される前記照明光を前記感光物体上に投射する投影光学系ユニットと;を備える露光装置。 - 請求項5に記載の露光装置において、
前記照明ユニットと前記投影光学系ユニットとの間の前記照明光の光路を含む空間が前記照明光を吸収する特性が空気に比べて小さい特定ガスでパージされるパージ空間とされるとともに、前記枠状部材が前記パージ空間を外気に対して隔離する隔壁を兼ねていることを特徴とする露光装置。 - 請求項6に記載の露光装置において、
前記枠状部材の前記照明ユニットとは反対側の前記定盤に対向する側の面に、前記特定ガスを加圧気体として用いる第1の気体静圧軸受が、ほぼ全周に渡って設けられていることを特徴とする露光装置。 - 請求項7に記載の露光装置において、
前記枠状部材の前記照明ユニット側の面に前記特定ガスを加圧気体として用いる第2の気体静圧軸受が、ほぼ全周に渡って設けられ、
前記枠状部材の照明ユニット側の面のほぼ全面に対向してかつ所定のクリアランスを介して配置され、前記第2の気体静圧軸受からの加圧気体が噴き付けられるプレートを、更に備える露光装置。 - 請求項6に記載の露光装置において、
前記枠状部材の前記照明ユニットとは反対側の前記定盤に対向する側の面に、真空吸引と加圧気体の噴出しとを同時に行う差動排気型の第1の気体静圧軸受が、ほぼ全周に渡って設けられていることを特徴とする露光装置。 - 請求項9に記載の露光装置において、
前記枠状部材の前記照明ユニット側の面に、真空吸引と加圧気体の噴出しとを同時に行う差動排気型の第2の気体静圧軸受が、ほぼ全周に渡って設けられ、
前記枠状部材の照明ユニット側の面のほぼ全面に対向してかつ所定のクリアランスを介して配置され、前記第2の気体静圧軸受からの加圧気体が噴き付けられるプレートを、更に備える露光装置。 - 請求項6〜10のいずれか一項に記載の露光装置において、
前記スライダの位置を計測する干渉計システムを更に備え、
前記干渉計システムから前記パージ空間内の前記スライダに向かう測長ビームの光路上に位置する前記枠状部材の側面部分に開口部を形成するとともに、該開口部を閉塞するカバーガラスを設置したことを特徴とする露光装置。 - リソグラフィ工程を含むデバイス製造方法であって、
前記リソグラフィ工程で、請求項5〜11のいずれか一項に記載の露光装置を用いて露光を行うことを特徴とするデバイス製造方法。
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PCT/JP2004/000655 WO2004073053A1 (ja) | 2003-02-17 | 2004-01-26 | ステージ装置及び露光装置、並びにデバイス製造方法 |
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JP2009093517A Division JP4915431B2 (ja) | 2003-02-17 | 2009-04-08 | ステージ装置及び露光装置、並びにデバイス製造方法 |
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EP (4) | EP1596423B1 (ja) |
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KR (2) | KR101313509B1 (ja) |
CN (3) | CN100380585C (ja) |
HK (2) | HK1221553A1 (ja) |
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