JP4062405B2 - 電源電圧レベル検出器 - Google Patents
電源電圧レベル検出器 Download PDFInfo
- Publication number
- JP4062405B2 JP4062405B2 JP2001393198A JP2001393198A JP4062405B2 JP 4062405 B2 JP4062405 B2 JP 4062405B2 JP 2001393198 A JP2001393198 A JP 2001393198A JP 2001393198 A JP2001393198 A JP 2001393198A JP 4062405 B2 JP4062405 B2 JP 4062405B2
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- supply voltage
- control signal
- node
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16533—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
- G01R19/16538—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measurement Of Current Or Voltage (AREA)
- Manipulation Of Pulses (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2001-75438 | 2001-11-30 | ||
KR10-2001-0075438A KR100434176B1 (ko) | 2001-11-30 | 2001-11-30 | 전원전압 레벨 검출기 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2003174099A JP2003174099A (ja) | 2003-06-20 |
JP4062405B2 true JP4062405B2 (ja) | 2008-03-19 |
Family
ID=19716501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001393198A Expired - Fee Related JP4062405B2 (ja) | 2001-11-30 | 2001-12-26 | 電源電圧レベル検出器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6639419B2 (ko) |
JP (1) | JP4062405B2 (ko) |
KR (1) | KR100434176B1 (ko) |
DE (1) | DE10164359B4 (ko) |
TW (1) | TW548903B (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7141470B2 (en) * | 2004-01-06 | 2006-11-28 | Macronix International Co., Ltd. | Low voltage CMOS structure with dynamic threshold voltage |
KR100713083B1 (ko) * | 2005-03-31 | 2007-05-02 | 주식회사 하이닉스반도체 | 내부전원 생성장치 |
TWI408548B (zh) * | 2007-09-12 | 2013-09-11 | Asustek Comp Inc | 量化指示電路 |
US11892864B2 (en) * | 2020-01-14 | 2024-02-06 | Texas Instruments Incorporated | Voltage supervisor with low quiescent current |
CN112798919B (zh) * | 2020-12-30 | 2024-04-02 | 乐鑫信息科技(上海)股份有限公司 | 基于fgd nmos管的电源低电压监测电路 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5927330A (ja) * | 1982-08-09 | 1984-02-13 | Hitachi Ltd | 電源監視回路 |
JPH06174759A (ja) | 1992-12-07 | 1994-06-24 | Toshiba Corp | 電圧検知回路装置 |
KR960000894B1 (ko) * | 1993-07-02 | 1996-01-13 | 삼성전자주식회사 | 반도체 메모리 장치의 전원전압 감지회로 |
FR2749939B1 (fr) | 1996-06-13 | 1998-07-31 | Sgs Thomson Microelectronics | Detecteur de gamme de tension d'alimentation dans un circuit integre |
TW404063B (en) * | 1997-02-27 | 2000-09-01 | Toshiba Corp | Semiconductor integrated circuit apparatus and semiconductor memory apparatus |
KR100253536B1 (ko) * | 1997-04-29 | 2000-04-15 | 김영환 | 리세트 회로 |
JPH11355123A (ja) * | 1998-06-11 | 1999-12-24 | Mitsubishi Electric Corp | 動的しきい値mosトランジスタを用いたバッファ |
KR100500947B1 (ko) * | 1998-10-28 | 2005-10-24 | 매그나칩 반도체 유한회사 | 전압 감지 장치 |
EP1045251A3 (en) | 1999-04-14 | 2001-09-12 | Matsushita Electric Industrial Co., Ltd. | Voltage detecting circuit |
KR100351932B1 (ko) * | 2000-05-30 | 2002-09-12 | 삼성전자 주식회사 | 반도체 메모리 장치의 전압 감지 회로 |
-
2001
- 2001-11-30 KR KR10-2001-0075438A patent/KR100434176B1/ko not_active IP Right Cessation
- 2001-12-26 JP JP2001393198A patent/JP4062405B2/ja not_active Expired - Fee Related
- 2001-12-27 US US10/026,673 patent/US6639419B2/en not_active Expired - Lifetime
- 2001-12-28 DE DE10164359A patent/DE10164359B4/de not_active Expired - Fee Related
- 2001-12-28 TW TW090132784A patent/TW548903B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE10164359A1 (de) | 2003-06-12 |
KR20030044617A (ko) | 2003-06-09 |
US20030102855A1 (en) | 2003-06-05 |
TW548903B (en) | 2003-08-21 |
JP2003174099A (ja) | 2003-06-20 |
DE10164359B4 (de) | 2008-10-16 |
KR100434176B1 (ko) | 2004-06-04 |
US6639419B2 (en) | 2003-10-28 |
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