JP4062405B2 - 電源電圧レベル検出器 - Google Patents

電源電圧レベル検出器 Download PDF

Info

Publication number: JP4062405B2
Authority: JP; Japan
Prior art keywords: power supply; supply voltage; control signal; node; voltage
Prior art date: 2001-11-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP2001393198A

Other languages

English (en)

Japanese (ja)

Other versions

JP2003174099A (ja

Inventor

大漢金

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

SK Hynix Inc

Original Assignee

Hynix Semiconductor Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-11-30

Filing date

2001-12-26

Publication date

2008-03-19

2001-12-26 Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc

2003-06-20 Publication of JP2003174099A publication Critical patent/JP2003174099A/ja

2008-03-19 Application granted granted Critical

2008-03-19 Publication of JP4062405B2 publication Critical patent/JP4062405B2/ja

2021-12-26 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

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Images

Classifications

- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16533—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
- G01R19/16538—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Dram (AREA)
Semiconductor Integrated Circuits (AREA)
Measurement Of Current Or Voltage (AREA)
Manipulation Of Pulses (AREA)

JP2001393198A 2001-11-30 2001-12-26 電源電圧レベル検出器 Expired - Fee Related JP4062405B2 (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
KR2001-75438		2001-11-30
KR10-2001-0075438A KR100434176B1 (ko)	2001-11-30	2001-11-30	전원전압 레벨 검출기

Publications (2)

Publication Number	Publication Date
JP2003174099A JP2003174099A (ja)	2003-06-20
JP4062405B2 true JP4062405B2 (ja)	2008-03-19

Family

ID=19716501

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2001393198A Expired - Fee Related JP4062405B2 (ja)	2001-11-30	2001-12-26	電源電圧レベル検出器

Country Status (5)

Country	Link
US (1)	US6639419B2 (ko)
JP (1)	JP4062405B2 (ko)
KR (1)	KR100434176B1 (ko)
DE (1)	DE10164359B4 (ko)
TW (1)	TW548903B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7141470B2 (en) *	2004-01-06	2006-11-28	Macronix International Co., Ltd.	Low voltage CMOS structure with dynamic threshold voltage
KR100713083B1 (ko) *	2005-03-31	2007-05-02	주식회사 하이닉스반도체	내부전원 생성장치
TWI408548B (zh) *	2007-09-12	2013-09-11	Asustek Comp Inc	量化指示電路
US11892864B2 (en) *	2020-01-14	2024-02-06	Texas Instruments Incorporated	Voltage supervisor with low quiescent current
CN112798919B (zh) *	2020-12-30	2024-04-02	乐鑫信息科技（上海）股份有限公司	基于fgd nmos管的电源低电压监测电路

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5927330A (ja) *	1982-08-09	1984-02-13	Hitachi Ltd	電源監視回路
JPH06174759A (ja)	1992-12-07	1994-06-24	Toshiba Corp	電圧検知回路装置
KR960000894B1 (ko) *	1993-07-02	1996-01-13	삼성전자주식회사	반도체 메모리 장치의 전원전압 감지회로
FR2749939B1 (fr)	1996-06-13	1998-07-31	Sgs Thomson Microelectronics	Detecteur de gamme de tension d'alimentation dans un circuit integre
TW404063B (en) *	1997-02-27	2000-09-01	Toshiba Corp	Semiconductor integrated circuit apparatus and semiconductor memory apparatus
KR100253536B1 (ko) *	1997-04-29	2000-04-15	김영환	리세트 회로
JPH11355123A (ja) *	1998-06-11	1999-12-24	Mitsubishi Electric Corp	動的しきい値ｍｏｓトランジスタを用いたバッファ
KR100500947B1 (ko) *	1998-10-28	2005-10-24	매그나칩 반도체 유한회사	전압 감지 장치
EP1045251A3 (en)	1999-04-14	2001-09-12	Matsushita Electric Industrial Co., Ltd.	Voltage detecting circuit
KR100351932B1 (ko) *	2000-05-30	2002-09-12	삼성전자 주식회사	반도체 메모리 장치의 전압 감지 회로

2001
- 2001-11-30 KR KR10-2001-0075438A patent/KR100434176B1/ko not_active IP Right Cessation
- 2001-12-26 JP JP2001393198A patent/JP4062405B2/ja not_active Expired - Fee Related
- 2001-12-27 US US10/026,673 patent/US6639419B2/en not_active Expired - Lifetime
- 2001-12-28 DE DE10164359A patent/DE10164359B4/de not_active Expired - Fee Related
- 2001-12-28 TW TW090132784A patent/TW548903B/zh not_active IP Right Cessation

Also Published As

Publication number	Publication date
DE10164359A1 (de)	2003-06-12
KR20030044617A (ko)	2003-06-09
US20030102855A1 (en)	2003-06-05
TW548903B (en)	2003-08-21
JP2003174099A (ja)	2003-06-20
DE10164359B4 (de)	2008-10-16
KR100434176B1 (ko)	2004-06-04
US6639419B2 (en)	2003-10-28

Legal Events

Date	Code	Title	Description
2004-04-08	A621	Written request for application examination	Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040407
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2007-10-24	A131	Notification of reasons for refusal	Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071023
2007-11-14	A521	Request for written amendment filed	Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071113
2007-11-30	TRDD	Decision of grant or rejection written
2007-12-12	A01	Written decision to grant a patent or to grant a registration (utility model)	Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20071211
2007-12-27	A61	First payment of annual fees (during grant procedure)	Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071218
2008-01-11	R150	Certificate of patent or registration of utility model	Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4062405 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150
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2020-01-11	LAPS	Cancellation because of no payment of annual fees

Publication	Publication Date	Title
US5982162A (en)	1999-11-09	Internal voltage generation circuit that down-converts external power supply voltage and semiconductor device generating internal power supply voltage on the basis of reference voltage
KR100240423B1 (ko)	2000-01-15	반도체 장치의 레벨 검출 회로
US7538602B2 (en)	2009-05-26	Semiconductor integrated circuit with stepped-down voltage generating circuit
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KR100549947B1 (ko)	2006-02-07	집적회로용 기준전압 발생회로
KR100795014B1 (ko)	2008-01-16	반도체 메모리 장치의 내부전압 발생기
EP0720295B1 (en)	2001-09-19	Semiconductor device
KR100421610B1 (ko)	2004-03-10	저전압 동적로직의 전력소모 억제회로
JP4062405B2 (ja)	2008-03-19	電源電圧レベル検出器
JP2004103941A (ja)	2004-04-02	電圧発生装置
US5786723A (en)	1998-07-28	Voltage switching circuit for a semiconductor memory device
US5668487A (en)	1997-09-16	Circuit detecting electric potential of semiconductor substrate by compensating fluctuation in threshold voltage of transistor
US6265932B1 (en)	2001-07-24	Substrate control voltage circuit of a semiconductor memory
KR19990081305A (ko)	1999-11-15	기준 전압 발생회로
KR100772544B1 (ko)	2007-11-02	반도체장치의 기판전압발생기
KR100554840B1 (ko)	2006-03-03	파워 업 신호 발생 회로
JP3602216B2 (ja)	2004-12-15	半導体装置
KR100623598B1 (ko)	2006-09-14	내부 전원전압 발생장치를 구비하는 반도체메모리소자
US7463074B2 (en)	2008-12-09	Integrated circuit and method for generating a ready signal
KR100451495B1 (ko)	2004-12-31	대기전류감소회로를갖는반도체집적회로
KR19980076029A (ko)	1998-11-16	백 바이어스 전압(vbb) 레벨 감지기
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KR960001293B1 (ko)	1996-01-25	전압레벨 감지기