JP4015137B2 - 薄膜トランジスタ・アレイ基板及びその製造方法 - Google Patents
薄膜トランジスタ・アレイ基板及びその製造方法 Download PDFInfo
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- JP4015137B2 JP4015137B2 JP2004179811A JP2004179811A JP4015137B2 JP 4015137 B2 JP4015137 B2 JP 4015137B2 JP 2004179811 A JP2004179811 A JP 2004179811A JP 2004179811 A JP2004179811 A JP 2004179811A JP 4015137 B2 JP4015137 B2 JP 4015137B2
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- 239000010409 thin film Substances 0.000 title claims description 120
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 125000006850 spacer group Chemical group 0.000 claims description 78
- 239000010408 film Substances 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 60
- 238000003860 storage Methods 0.000 claims description 46
- 239000003990 capacitor Substances 0.000 claims description 26
- 230000001681 protective effect Effects 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000005507 spraying Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 description 49
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 239000004973 liquid crystal related substance Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 10
- 239000010949 copper Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- -1 acrylic organic compound Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
以下、本発明の望ましい実施例を図5乃至図14を参照して詳細に説明する。
4、54・・・データライン
6、56・・・ゲート電極
8、58・・・ソース電極
10、60・・・ドレイン電極
12、62・・・ゲート絶縁膜
14、64・・・活性層
16、66・・・オーミック接触層
18、68・・・保護膜
20、70・・・接触ホール
22、72・・・画素電極
24、74・・・ストレージ電極
28、78・・・ストレージ・キャパシタ
30、80・・・薄膜トランジスタ
32、82・・・スペーサ
34、84・・・画素領域
Claims (13)
- 基板上に形成されるゲートラインと、
前記ゲートラインにゲート絶縁膜を介して交差して画素領域を決めるデータラインと、
前記ゲートラインと前記データラインの交差部に形成される薄膜トランジスタと、
前記ゲートライン上方に形成されるストレージ電極と、
前記薄膜トランジスタ及びストレージ電極と接触ホールを通じて接続されるように前記画素領域に形成された画素電極と、
前記接触ホールを満たすとともに前記画素電極上にインクジェット噴射方式で形成されるスペーサとを具備していて、
前記データライン及び前記ゲートラインの中の少なくともいずれかの信号ラインは、前記信号ラインから前記画素領域方向へ突出され、前記スペーサの幅より広く形成される突出部を含む
ことを特徴とする薄膜トランジスタ・アレイ基板。 - 前記突出部は、四角形を含む多角形及び円形の中からいずれかの形態に形成されることを特徴とする請求項1記載の薄膜トランジスタ・アレイ基板。
- 前記突出部の幅は、約30〜50μmに形成されることを特徴とする請求項2記載の薄膜トランジスタ・アレイ基板。
- 前記ゲートライン、そのゲートラインに前記ゲート絶縁膜及び保護膜を介して重畳される前記画素電極からなるストレージ・キャパシタをさらに具備することを特徴とする請求項1記載の薄膜トランジスタ・アレイ基板。
- 前記ゲートライン、そのゲートラインに前記ゲート絶縁膜を介して重畳されて前記画素電極と接触するストレージ電極からなるストレージ・キャパシタをさらに具備することを特徴とする請求項1記載の薄膜トランジスタ・アレイ基板。
- 前記スペーサは、上下方向断面形状において半円及び半楕円の中からいずれかの形態に形成されることを特徴とする請求項1記載の薄膜トランジスタ・アレイ基板。
- 前記薄膜トランジスタは、前記ゲートラインに接続されたゲート電極と、前記データラインに接続されたソース電極と、前記画素電極に接続されたドレイン電極と、前記薄膜トランジスタのチャンネル部を形成する半導体層とを含むことを特徴とする請求項1記載の薄膜トランジスタ・アレイ基板。
- 前記半導体層は、前記データライン、前記ソース電極及び前記ドレイン電極に沿って、それらの下部に形成されることを特徴とする請求項7記載の薄膜トランジスタ・アレイ基板。
- 基板上にゲートラインを形成する段階と、
前記ゲートラインにゲート絶縁膜を介して交差して画素領域を決めるデータラインを形成する段階と、
前記ゲートラインと前記データラインの交差部に薄膜トランジスタを形成する段階と、
前記ゲートライン上方にストレージ電極を形成する段階と、
前記薄膜トランジスタ及び前記ストレージ電極と接触ホールを通じて接続されるように前記画素領域に画素電極を形成する段階と、
前記接触ホールを満たすとともに前記画素電極上にインクジェット噴射方式でスペーサを形成する段階と含んでいて、
前記データライン及び前記ゲートラインの中の少なくともいずれかの信号ラインは、前記信号ラインから前記画素領域方向へ突出され、前記スペーサの幅より広く形成される突出部を含む
ことを特徴とする薄膜トランジスタ・アレイ基板の製造方法。 - 前記突出部は、四角形を含む多角形及び円形の中からいずれかの形態に形成されることを特徴とする請求項9記載の薄膜トランジスタ・アレイ基板の製造方法。
- 前記ゲートライン、そのゲートラインに前記ゲート絶縁膜及び保護膜を介して重畳される前記画素電極からなるストレージ・キャパシタを形成する段階をさらに含むことを特徴とする請求項9記載の薄膜トランジスタ・アレイ基板の製造方法。
- 前記ゲートライン、そのゲートラインに前記ゲート絶縁膜を介して重畳されて前記画素電極と接触するストレージ・電極からなるストレージ・キャパシタを形成する段階をさらに含むことを特徴とする請求項9に記載の薄膜トランジスタ・アレイ基板の製造方法。
- 前記スペーサは、上下方向断面形状において半円及び反楕円の中からいずれかの形態に形成されることを特徴とする請求項9記載の薄膜トランジスタ・アレイ基板の製造方法。
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KR10-2003-0038990A KR100489282B1 (ko) | 2003-06-17 | 2003-06-17 | 박막 트랜지스터 어레이 기판 및 그 제조방법 |
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JP2007151582A Division JP2007226272A (ja) | 2003-06-17 | 2007-06-07 | 薄膜トランジスタ・アレイ基板及びその製造方法 |
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JP2005010784A JP2005010784A (ja) | 2005-01-13 |
JP4015137B2 true JP4015137B2 (ja) | 2007-11-28 |
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JP2004179811A Expired - Fee Related JP4015137B2 (ja) | 2003-06-17 | 2004-06-17 | 薄膜トランジスタ・アレイ基板及びその製造方法 |
JP2007151582A Abandoned JP2007226272A (ja) | 2003-06-17 | 2007-06-07 | 薄膜トランジスタ・アレイ基板及びその製造方法 |
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Country Status (5)
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US (2) | US7170576B2 (ja) |
JP (2) | JP4015137B2 (ja) |
KR (1) | KR100489282B1 (ja) |
CN (1) | CN1573489B (ja) |
DE (1) | DE102004028991B4 (ja) |
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JPH10339885A (ja) | 1997-06-09 | 1998-12-22 | Hitachi Ltd | アクティブマトリクス型液晶表示装置 |
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JPH11212075A (ja) | 1998-01-23 | 1999-08-06 | Toshiba Electronic Engineering Corp | 液晶表示装置の製造方法 |
JP4220030B2 (ja) | 1998-10-13 | 2009-02-04 | 東芝松下ディスプレイテクノロジー株式会社 | 液晶表示素子の製造方法 |
US6501527B1 (en) * | 1999-07-29 | 2002-12-31 | Canon Kabushiki Kaisha | Liquid crystal elemental device, production process thereof and spacer-bearing substrate |
US6245469B1 (en) * | 1999-09-09 | 2001-06-12 | Canon Kabushiki Kaisha | Manufacturing method for color filter and liquid crystal element using color filter manufactured thereby |
JP2001100217A (ja) * | 1999-09-29 | 2001-04-13 | Nec Corp | カラー液晶表示装置およびその製造方法 |
JP2002182236A (ja) | 2000-12-11 | 2002-06-26 | Toshiba Corp | 平面表示装置用アレイ基板 |
KR20020078517A (ko) * | 2001-04-03 | 2002-10-19 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 스페이서 형성방법 |
-
2003
- 2003-06-17 KR KR10-2003-0038990A patent/KR100489282B1/ko not_active IP Right Cessation
-
2004
- 2004-06-16 DE DE102004028991A patent/DE102004028991B4/de not_active Expired - Fee Related
- 2004-06-16 US US10/867,809 patent/US7170576B2/en active Active
- 2004-06-17 JP JP2004179811A patent/JP4015137B2/ja not_active Expired - Fee Related
- 2004-06-17 CN CN2004100628040A patent/CN1573489B/zh not_active Expired - Fee Related
-
2006
- 2006-10-30 US US11/589,185 patent/US7295255B2/en not_active Expired - Fee Related
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2007
- 2007-06-07 JP JP2007151582A patent/JP2007226272A/ja not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN1573489B (zh) | 2010-05-05 |
DE102004028991B4 (de) | 2010-06-02 |
JP2007226272A (ja) | 2007-09-06 |
DE102004028991A1 (de) | 2005-02-10 |
DE102004028991A8 (de) | 2005-06-09 |
US20070040955A1 (en) | 2007-02-22 |
US7295255B2 (en) | 2007-11-13 |
JP2005010784A (ja) | 2005-01-13 |
CN1573489A (zh) | 2005-02-02 |
US7170576B2 (en) | 2007-01-30 |
KR100489282B1 (ko) | 2005-05-17 |
US20040257519A1 (en) | 2004-12-23 |
KR20040108417A (ko) | 2004-12-24 |
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