JP3855523B2 - Icチップと回路基板との接続方法 - Google Patents
Icチップと回路基板との接続方法 Download PDFInfo
- Publication number
- JP3855523B2 JP3855523B2 JP05611999A JP5611999A JP3855523B2 JP 3855523 B2 JP3855523 B2 JP 3855523B2 JP 05611999 A JP05611999 A JP 05611999A JP 5611999 A JP5611999 A JP 5611999A JP 3855523 B2 JP3855523 B2 JP 3855523B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- circuit board
- chip
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/4848—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/85051—Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85444—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/85951—Forming additional members, e.g. for reinforcing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【発明の属する技術分野】
本発明は、ICチップの電極と回路基板の電極とをワイヤボンディングで形成されたAuよりなる導線によって電気的に接続する方法に関する。
【0002】
【従来の技術】
この種のICチップと回路基板(配線基板)との接続方法として、例えば特開平3−183139号公報に、予め回路基板の配線上にボールボンディングを行ってバンプを形成しておき、半導体チップのパッド上に1次ボンディングを行った後、上記バンプ上に2次ボンディングを行うという方法が記載されている。
【0003】
一方、特開平4−293244号公報には、回路基板上の微細パターン(配線)に機械的押圧加工によって平坦部を形成し、この平坦部を利用してステッチボンディングを行うという方法が記載されている。
【0004】
【発明が解決しようとする課題】
しかしながら、上記の前者公報の方法では、ボール状のバンプは凸状の半球形状のため、該バンプの上に2次ボンディングを行った場合、ワイヤ(導線)の接合性が悪くなる。
また、ボールボンディングを行ってバンプを形成するとき、Auワイヤを上方へ引っ張ってバンプからAuワイヤを切り離すようにしているため、図4(a)に示す様に、バンプJ1上にテールJ2が発生し、バンプJ1上に2次ボンディングを行うとき、バンプJ1上のテールJ2にAuワイヤJ3が接合され、図4(b)に示す様に、さらに大きなテールJ4が発生することがある。
【0005】
また、一般に、配線材料が例えばCu、Ni、フラッシュAuめっき等のようにAuワイヤと接合性の悪い材料であると、配線上に直接ボンディングを行うことはできないとされている。上記の後者公報の方法では、回路基板上の微細パターン(配線)は、Auワイヤのボンディングとは同質材質のものではないCuめっきのパターンであり、該Cuめっきのパターンを機械的押圧加工によって平坦部にするだけであるため、ワイヤ(導線)の接合信頼性がどうしても落ちてしまう。
【0006】
さらに、回路基板の表面上に酸化膜が生成していると、その生成状態によりボンディングにおいてバラツキが大きくなり、結果的に接続信頼性が悪くなる。
本発明は上記問題に鑑み、ICチップと回路基板とをワイヤボンディングで形成されたAuよりなる導線によって電気的に接続する方法において、導線の接合性を向上させることを目的とする。
【0009】
【課題を解決するための手段】
上記目的を達成するため、請求項1記載の発明においては、回路基板(1)のうちワイヤボンディングの2次側となる部分(4)の表面(4a)をAuよりなる線材(5)でこすることにより、該表面を清浄化すると共に該表面に薄いAu膜(21)を形成し、該Au膜を2次側としてワイヤボンディングを行うことにより導線(10)を形成するようにしたことを特徴としている。
【0010】
本発明によれば、ワイヤボンディングの2次側となる部分(4)の材料が、Auよりなる導線(10)と接合性の悪い材料であっても、予め回路基板(1)のうちワイヤボンディングの2次側となる部分(4)の表面(4a)に薄いAu膜(21)を形成するため、該導線と同じ材質である該Au膜に2次ボンディングを行うことができ、接合性が向上する。
【0011】
また、このこすりつけた薄いAu膜(21)には凸状の突起が生じないため、従来のバンプが凸状の半球形状であることによる導線の接合性の悪化、2次ボンディングの際のバンプ上でのテール発生、といった問題もなくなる。
また、回路基板(1)のうちワイヤボンディングの2次側となる部分(4)の表面(4a)をAuよりなる線材(5)でこすることにより清浄化する工程によって、基板表面上の酸化膜を除去することが出来、接合信頼性が得られる。
【0012】
従って、本発明によれば、導線(10)の接合性を向上させることができる。
なお、上記各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。
【0013】
【発明の実施の形態】
(参考形態)図1及び図2は、参考形態に係るICチップと回路基板との接続方法を示す工程図であり、本接続方法は、最終的に図2(c)に示す接続構造(部分断面図)を得るものである。なお、図1及び図2(a)、(b)は、図2(c)に対応した断面にて各接続工程の状態を示している。以下、接続工程順に説明する。
【0014】
まず、図1(a)に示す様に、回路基板(セラミック基板やプリント基板などの基板もしくはリードフレーム)1を用意する。この回路基板1の一面上には、ダイマウントペースト2(例えばはんだやAgペースト)によりICチップ3がダイマウントされ、ICチップ3上には、ICチップ3の内部回路と電気的に接続されたパッド3aが設けられている。
【0015】
一方、回路基板1の一面上のうちICチップ3の設置領域と異なる部分には、Cu、Ni、フラッシュAuめっき等のようにAuワイヤと接合性の悪い配線材料を用いた配線4が形成されている。
そして、図1(a)〜(d)に示す様に、この配線4上に、Auよりなる凸状のAuバンプ6を、Auワイヤ5を用いてボールボンディングにより形成する。これは、ICチップ3のパッド3aと配線4との間をAuワイヤ5を用いてワイヤボンディングし後述の導線10を形成する場合に、Auバンプ6と導線10とを同質材質のAuより構成することにより、導線10の接合性を良くするためである。
【0016】
具体的には、図1(a)に示す様に、キャピラリ7の貫通孔7aにAuワイヤ5を挿通した状態で、トーチ電極8からの放電によりキャピラリ7から突出したAuワイヤ5の先端にボール5aを形成する。
次に、図1(b)に示す様に、キャピラリ7を配線4上に位置させてボールボンディングを行う。このボールボンディングによってAuバンプ6を形成する。
【0017】
次に、図1(c)に示す様に、キャピラリ7を後方(Auバンプ6に対しICチップ3と反対側の方向)に移動させてウェッジボンディングを行う。この場合、キャピラリ7を配線4上に押しつけてAuバンプ6から延びるAuワイヤ5を切断する。
次に、図1(d)に示す様に、キャピラリ7を上方に移動させ、トーチ電極8からの放電により、Auワイヤ5の先端にボール5aを形成する。以上これら図1(a)〜(d)の工程を順次繰り返しAuバンプ6を必要箇所に形成していく。図2(a)は図1(a)〜(d)のボールボンディング工程(凸状バンプ形成工程)終了後の状態を示す。
【0018】
続いて、図2(b)に示す機械的押圧加工工程を行う。凸状のAuバンプ6に、平坦面を有する治具9の該平坦面を接触させ、一定の荷重で押圧することにより、Auバンプ6に回路基板1の一面と略平行な平坦面を有する平坦形状部6aを形成する。本例では、Auバンプ6全体を平板形状にリフォーミングする。そして、平坦形状部6aを2次側としたワイヤボンディング工程(導線形成工程)を行うことにより、図2(c)に示す接続構造を完成させる。即ち、Auワイヤ5によりICチップ3のパッド3aにボールボンディング(一次ボンディング)を行うと共に、平坦形状部6aにステッチボンディング(2次ボンディング)を行う。
【0019】
このワイヤボンディング工程(導線形成工程)により、ICチップ3のパッド3aと平坦形状部6aとの間にAuよりなる上記導線10が形成され、ICチップ3と回路基板1とが電気的に接続される。ところで、本参考形態によれば、2次側となる部分である配線4に形成された凸状のバンプ6を機械的押圧加工によって平坦形状とし、その平坦形状部6aに2次ボンディングを行うようにしているため、従来のバンプが凸状の半球形状であることによる導線の接合性の悪化、2次ボンディングの際のバンプ上でのテール発生といった問題を防止することができる。
【0020】
また、ワイヤボンディングの2次側となるバンプ6を、導線10と同質材質のAu(つまりAuワイヤ5)により形成しているため、導線10とバンプ6の接合信頼性が悪いといった問題もなくなる。従って、本参考形態の製造方法によれば、導線10の接合性を向上させることができる。なお、上記接続方法では、回路基板1の配線4をワイヤボンディングの2次側としたが、これとは逆に、ICチップ3のパッド3aをワイヤボンディングの2次側としてもよい。
(本発明の実施形態)図3は、本発明の実施形態に係るICチップと回路基板との接続方法を示す工程図であり、本接続方法は、最終的に図3(c)に示す接続構造(部分断面図)を得るものである。なお、図3(a)、(b)は、図3(c)に対応した断面にて各接続工程の状態を示し、図中、参考形態と同一部分には同一符号を付してある。以下、接続工程順に説明する。
【0021】
まず、図3(a)に示す様に、上記参考形態と同様の回路基板1を用意する。この回路基板1の一面上には、接着剤20によりICチップ3がダイマウントされ、ICチップ3上にはワイヤボンディングの1次側電極となるパッド3aが設けられている。また、回路基板1の一面上にはワイヤボンディングの2次側の電極となる配線4が形成されている。
【0022】
そして、図3(a)に示す様に、導線10が接続される部分である配線4の表面4aを、AuよりなるAuワイヤ(本発明でいう線材)5で振動、荷重を加えてこすりつけ、該表面4aを清浄化し、該表面4aに存在する酸化生成膜(図示せず)を除去すると共に、図3(b)に示す様に、薄いAu膜21を形成する(線材こすりつけ工程)。
【0023】
このAuワイヤ5のこすりつけは、例えば、上記図1(a)に示すキャピラリ7自身を動かしたり、キャピラリ7から露出するAuワイヤ5の部分を他の治具で支持しながら該治具を動かすことで、Auワイヤ5の先端のボール5aにより配線4の表面4aをこすりつけることによって、行うことができる。いずれにしろ、何らかの治具等を用いてこすりつけることができれば良く、その方法は限定されない。
【0024】
次に、Au膜21を2次側としたワイヤボンディング工程を行うことにより、図3(c)に示す接続構造を完成させる。即ち、Auワイヤ5によりICチップ3のパッド3aにボールボンディングを行うと共に、薄いAu膜21にステッチボンディングを行う(導線形成工程)。こうして、ICチップ3のパッド3aとAu膜21との間にAuよりなる上記導線10が形成され、ICチップ3と回路基板1とが電気的に接続される。
【0025】
ところで、本実施形態によれば、配線4の材料が、Auよりなる導線10と接合性の悪い材料であっても、予め回路基板1のうちワイヤボンディングの2次側となる部分である配線4の表面4aに薄いAu膜21を形成するため、導線10と同じ材質であるAu膜21に2次ボンディングを行うことができ、接合性が向上する。
【0026】
また、このこすりつけた薄いAu膜21には凸状の突起が生じないため、従来のバンプが凸状の半球形状であることによる導線の接合性の悪化、2次ボンディングの際のバンプ上でのテール発生といった問題もなくなる。
また、回路基板1のうちワイヤボンディングの2次側となる配線4の表面4aをAuよりなる線材であるAuワイヤ5でこすることにより清浄化する工程によって、配線4の表面4a上の酸化膜を除去することが出来、接合信頼性が得られる。
【図面の簡単な説明】
【図1】参考形態に係る接続方法を示す工程図である。
【図2】図1に続く接続方法を示す工程図である。
【図3】本発明の実施形態に係る接続方法を示す工程図である。
【図4】従来の接続方法による2次ボンディング側の部分の拡大図である。
【符号の説明】
1…回路基板、3…ICチップ、4…配線、4a…配線の表面、5…Auワイヤ、6…凸状のAuバンプ、6a…平坦形状部、10…導線、21…Au膜。
Claims (1)
- ICチップ(3)と回路基板(1)とをワイヤボンディングで形成されたAuよりなる導線(10)によって電気的に接続する方法であって、
前記回路基板のうちワイヤボンディングの2次側となる部分(4)の表面(4a)を、Auよりなる線材(5)でこすることにより、該表面を清浄化すると共に該表面に薄いAu膜(21)を形成する工程と、
前記Au膜を2次側としてワイヤボンディングを行うことにより前記導線を形成し、前記ICチップと前記回路基板とを電気的に接続する工程、とを備えることを特徴とするICチップと回路基板との接続方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05611999A JP3855523B2 (ja) | 1999-03-03 | 1999-03-03 | Icチップと回路基板との接続方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05611999A JP3855523B2 (ja) | 1999-03-03 | 1999-03-03 | Icチップと回路基板との接続方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000252315A JP2000252315A (ja) | 2000-09-14 |
JP3855523B2 true JP3855523B2 (ja) | 2006-12-13 |
Family
ID=13018196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP05611999A Expired - Fee Related JP3855523B2 (ja) | 1999-03-03 | 1999-03-03 | Icチップと回路基板との接続方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3855523B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004297014A (ja) * | 2003-03-28 | 2004-10-21 | Denso Corp | 半導体装置のワイヤボンディング方法及び半導体装置 |
JP5003304B2 (ja) * | 2007-06-25 | 2012-08-15 | 株式会社デンソー | ワイヤボンディング方法 |
-
1999
- 1999-03-03 JP JP05611999A patent/JP3855523B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2000252315A (ja) | 2000-09-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3935370B2 (ja) | バンプ付き半導体素子の製造方法、半導体装置及びその製造方法、回路基板並びに電子機器 | |
JP3133341B2 (ja) | 半導体ダイのための接触ピンおよび相互接続部を形成する方法 | |
JP3913134B2 (ja) | バンプの形成方法及びバンプ | |
JPH11219420A (ja) | Icカードモジュール、icカード及びそれらの製造方法 | |
JPH11121543A (ja) | チップスケールパッケージ | |
JP3570551B2 (ja) | ワイヤボンディング方法 | |
JP3855523B2 (ja) | Icチップと回路基板との接続方法 | |
JPH09232499A (ja) | 半導体装置 | |
JPH09162230A (ja) | 電子回路装置及びその製造方法 | |
JP3887993B2 (ja) | Icチップと回路基板との接続方法 | |
JP3997665B2 (ja) | 半導体素子と回路基板との接続方法 | |
JP4007917B2 (ja) | 半導体装置及びその製造方法 | |
JP3855532B2 (ja) | Icチップと回路基板との接続方法 | |
JP3972518B2 (ja) | ボールボンディング方法および電子部品の接続方法 | |
JP2007035863A (ja) | 半導体装置 | |
JP3055496B2 (ja) | 半導体装置の実装構造 | |
JPH10112479A (ja) | 基板の接続方法 | |
JPH0982742A (ja) | ワイヤボンディング方法 | |
JP2010141112A (ja) | 半導体装置および半導体装置の製造方法 | |
JP4450130B2 (ja) | 導体金属を用いた接合構造 | |
JP3810155B2 (ja) | ワイヤボンディング方法 | |
JPH10340906A (ja) | 表面実装型電子部品及びその製造方法並びにその実装方法 | |
JP2523209Y2 (ja) | 混成集積回路 | |
JPH05175408A (ja) | 半導体素子の実装用材料および実装方法 | |
JP2002270629A (ja) | 電子部品およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050329 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060623 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060627 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060731 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20060822 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20060904 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090922 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100922 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100922 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110922 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110922 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120922 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120922 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130922 Year of fee payment: 7 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |