JP3913134B2 - バンプの形成方法及びバンプ - Google Patents

バンプの形成方法及びバンプ Download PDF

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Publication number
JP3913134B2
JP3913134B2 JP2002231931A JP2002231931A JP3913134B2 JP 3913134 B2 JP3913134 B2 JP 3913134B2 JP 2002231931 A JP2002231931 A JP 2002231931A JP 2002231931 A JP2002231931 A JP 2002231931A JP 3913134 B2 JP3913134 B2 JP 3913134B2
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Japan
Prior art keywords
conductor
bump
capillary
bonding
wire
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JP2002231931A
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JP2004071983A (ja
Inventor
玲 今井
玉成 安田
志信 石井
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Kaijo Corp
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Kaijo Corp
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Priority to JP2002231931A priority Critical patent/JP3913134B2/ja
Priority to TW91120240A priority patent/TW564538B/zh
Priority to KR10-2002-0053839A priority patent/KR100533487B1/ko
Priority to US10/243,201 priority patent/US6715666B2/en
Priority to CNB021429669A priority patent/CN1230884C/zh
Publication of JP2004071983A publication Critical patent/JP2004071983A/ja
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Publication of JP3913134B2 publication Critical patent/JP3913134B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
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Description

【０００１】
【発明の属する技術分野】
本発明は、第１導体上に１次ボンディングを行うとともに、第２導体上に２次ボンディングを行って、第１導体と第２導体間をワイヤボンディングするにあたり、ワイヤボンディングしたワイヤが他のワイヤと接触したり或いは回路基板面と接触したりすることがないように、予め第２導体上にボールボンディングにより好適な形状のバンプを形成する方法に関するものである。
【０００２】
【従来の技術】
ワイヤボンディングを行う場合、キャピラリ内にＡｕワイヤが挿通されたキャピラリを用い、トーチ電極からの放電によりキャピラリから突出したＡｕワイヤの先端にボールを形成し、キャピラリを半導体チップ上に位置させ１次ボンディングを行った後、キャピラリを配線上に移動させ２次ボンディングを行うことにより、半導体チップと配線間をワイヤボンディングする方法が一般的に用いられている。
【０００３】
この場合、配線材料が、例えばＣｕ、Ｎｉ、フラッシュＡｕめっき等のようにＡｕワイヤと接合性の悪い材料であると、配線上に直接ボンディングを行うことができないため、ボンディングを行う部分に、予めＡｇメッキあるいはＡｕ厚膜等の下地を形成するようにしている。
【０００４】
しかしながら、そのような下地を設けるのは実用上好ましくなく、配線材料がＡｕワイヤと接合性の悪い材料であっても、配線上に直接ボンディングできるようにする方法が望まれている。
【０００５】
例えば、特開平１０−１１２４７１号公報には、図７に示すように、回路基板３０の第２導体２０上にボールボンディングを行ってバンプ５１ａを形成し、そのウエッジボンディングをバンプ５１ａに対して第１導体１０と反対側の位置にて行った後、バンプ５１ａに対し第１導体１０側からワイヤ５０をルーピングしてバンプ５１ａ上に２次ボンディングを行い、第１導体１０と第２導体２０間をワイヤボンディングする方法が記載されている。
【０００６】
この方法によれば、ボールボンディングによりバンプを形成した後に、そのウエッジボンディングをバンプ後方の配線部上に行うので、ウエッジボンディングは屈曲した形状になり、バンプのテールの発生がなくなる。
また、バンプ上に２次ボンディングを行う場合、バンプ５１ａからのびるワイヤ５０の屈曲部５１ｂが貫通孔４１内に入り込むようにキヤピラリ４０を位置させたとき、貫通孔４１の内壁により屈曲部５１ｂが押され、ワイヤ５０が貫通孔４１の他側の内壁にて押しつぶされた状態で接合される特徴を持っていると記載されている。
【０００７】
【発明が解決しようとする課題】
しかしながら、上記公報に掲載された方法では、図８に示すように、バンプ形成後のウエッジボンディングとワイヤ部との接合になり、すなわち曲面同士での接合となり、接合位置ずれを起こした場合、結果としてワイヤ曲がりを発生させ、隣り合うワイヤ間で接触が発生するおそれがある。
また、バンプ後のウエッジボンディングを後方へ湾曲形状に形成することによりワイヤテールの発生は抑制出来るが、ワイヤとバンプ接合において十分な傾斜、及び平面が確保出来ないため、図８の破線で示したように、バンプ５１ａとワイヤ５０を接合した後に発生するワイヤ５０と回路基板３０との接触、ワイヤ５０と配線間の接触を防止出来ない。
【０００８】
本発明の課題は、バンプとワイヤ接合後のワイヤ部と回路基板との接触、及びワイヤと配線間との接触の発生を防止でき、かつバンプとワイヤ接合時のワイヤ曲がりの発生を防止できるバンプの形成方法及びバンプの提供にある。
【０００９】
【課題を解決するための手段】
上述課題を解決するために、本発明は、次のような手段を採用した。
請求項１記載のバンプの形成方法は、第１導体上に１次ボンディングを行うとともに、第２導体上に２次ボンディングを行って、第１導体と第２導体間をワイヤボンディングするにあたり、予め第２導体上にボールボンディングによりバンプを形成する方法であって、キャピラリを第２導体上に下降させ、ワイヤの先端に形成されたボールを第２導体上にボンディングしてバンプを形成する第１の工程と、前記第１の工程後に、前記キャピラリを垂直上昇させる第２の工程と、前記第２の工程後に、前記キャピラリを前記第１導体の位置する方向と反対方向へ横移動させる第３の工程と、前記第３の工程後に、前記キャピラリを下降させてキャピラリ底部をバンプ面に押し付ける第４の工程と、前記第４の工程後に、前記キャピラリを前記第１導体の方向へ横移動させ、バンプ上面が前記第１導体方向に向かって高くなる傾斜平面となるようにする第５の工程と、を備えたものである。
【００１０】
請求項２記載のバンプの形成方法は、第１導体上に１次ボンディングを行うとともに、第２導体上に２次ボンディングを行って、第１導体と第２導体間をワイヤボンディングするにあたり、予め第２導体上にボールボンディングによりバンプを形成する方法であって、キャピラリを第２導体上に下降させ、ワイヤの先端に形成されたボールを第２導体上にボンディングしてバンプを形成する第１の工程と、前記第１の工程後に、前記キャピラリを垂直上昇させる第２の工程と、前記第２の工程後に、前記キャピラリを前記第１導体の位置する方向へ横移動させる第３の工程と、前記第３の工程後に、前記キャピラリを垂直上昇させる第４の工程と、前記第４の工程後に、前記キャピラリを前記第１導体の位置する方向と反対方向へ横移動させる第５の工程と、前記第５の工程後に、前記キャピラリを下降させてキャピラリ底部をバンプ面に押し付ける第６の工程と、前記代６の工程後に、前記キャピラリを前記第１導体の位置する方向へ横移動させ、バンプ上面が前記第１導体方向に向かって高くなる傾斜平面となるようにする第７の工程と、を備えたものである。
【００１３】
【発明の実施の形態】
以下、図面を参照して、本発明に係るバンプの形成方法の実施の形態について説明する。なお、従来の技術の項や発明が解決しようとする課題の項の説明で用いた部材と同等のものには同一符号を付す。
図１は、セラミック基板やプリント基板等の基板又はリードフレーム等からなる回路基板３０上に設けられた第１導体１０と第２導体２０、及びボンディング装置の一部を構成するキャピラリ４０とその貫通孔４１内を通って下降し先端にボール５１が形成されたワイヤ５０を示したものである。
【００１４】
次に、請求項１に係るバンプの形成方法の実施の形態を図２に基づいて説明する。
先ず、キャピラリ４０の底部の貫通孔４１から突出しているワイヤ５０の先端に、図示を省略した電気トーチの熱によってボール５１を形成する。ここまでは、一般的工程である。
次に、第１の工程として、図２（ａ）に示すように、キャピラリ４０を第２導体上２０に下降させ、ワイヤ５０の先端に形成されたボール５１を第２導体上にボンディングしてバンプ５１ａを形成する。
続いて、第２の工程として、図２（ｂ）に示すように、前記キャピラリ４０を垂直に上昇させる。
次に、第３の工程として、図２（ｃ）に示すように、前記キャピラリ４０を前記第１導体１０の位置する方向と反対方向へ横移動させる。
更に、第４の工程として、図２（ｄ）に示すように、前記キャピラリ４０を下降させてキャピラリ底部４２をバンプ５１ａ面に押し付ける。
続いて、第５の工程として、図２（ｅ）に示すように、前記キャピラリ４０を前記第１導体１０の方向へ横移動させる。
これらの工程をキャピラリの動きで示すと、図２（ｆ）に示すように、▲１▼→▲２▼→▲３▼→▲４▼→▲５▼となり、これらの工程を経ることで、上面が傾斜面となるバンプを第２導体２０面上に形成することができる。
【００１５】
上記の各工程におけるキャピラリ４０の移動距離及び移動方向の制御は、それによって形成されたバンプが、図３に示すように、第１導体１０と第２導体２０とで結ぶ垂直断面視において、バンプ５１ａの上面端部（イ）（ロ）間の第２導体２０面に対する傾斜角θが、第１導体に向かって２°〜６０°の開角になるように行う。
なお、図において、Ａはバンプ５１ａの基底部の径、Ｂは基底部の高さ、Ｃはバンプ５１ａの高さを示している。
【００１６】
実際には、上記Ａ，Ｂ，Ｃの数値は、ワイヤ５０の直径にも関係するもので、ワイヤ５０の直径が７〜１００μｍの場合、基底部の径Ａは２５〜３００μｍであり、基底部の厚さＢは４〜６０μｍ、バンプの高さＣは１０〜２００μｍの範囲で形成することが可能である。一例をあげれば、ワイヤ直径＝３０μｍの金線の場合で、基底部径Ａ＝７５μｍ、基底部厚さＢ＝１７μｍ、バンプ高さＣ＝６０μｍのバンプ５１ａを形成した。また、他の例では、ワイヤ直径＝５０μｍの金線の場合で、基底部径Ａ＝１９０μｍ、基底部厚さＢ＝３５μｍ、バンプ高さＣ＝１１０μｍのバンプ５１ａを形成した。
【００１７】
また、バンプ５１ａ上面の傾斜角θを２°〜６０°としたのは、第１導体１０と第２導体２０の高さ方向における位置関係によって、実験によりこの範囲が適当としたものである。すなわち、第１導体１０と第２導体２０間をワイヤボンディングする際に、回路基板３０上で第１導体１０が第２導体２０より低い位置にある場合は、傾斜角θを小さくした方が第１導体１０からルーピングさせたワイヤを第２導体２０面上のバンプ５１ａ上面に案内し易くなるからである。一方、第１導体１０が第２導体２０より高い位置にある場合、逆に傾斜角θを大きくする方が案内し易くなるからである。
【００１８】
次に、請求項２に係るバンプの形成方法の実施の形態を図４に基づいて説明する。
先ず、キャピラリ４０の底部の貫通孔４１から突出しているワイヤ５０の先端に、図示を省略した電気トーチの熱によってボール５１を形成する。
次に、第１の工程として、図４（ａ）に示すように、キャピラリ４０を第２導体上２０に下降させ、ワイヤ５０の先端に形成されたボール５１を第２導体上にボンディングしてバンプ５１ａを形成する。
続いて、第２の工程として、図４（ｂ）に示すように、前記キャピラリ４０を垂直に上昇させる。
そして、第３の工程として、図４（ｃ）に示すように、前記キャピラリ４０を前記第１導体１０の位置する方向へ横移動させる。
続いて、第４の工程として、図４（ｄ）に示すように、前記キャピラリ４０を垂直に上昇させる。
次に、第５の工程として、図４（ｅ）に示すように、前記キャピラリ４０を前記第１導体１０の位置する方向と反対方向へ横移動させる。
更に、第６の工程として、図４（ｆ）に示すように、前記キャピラリ４０を下降させてキャピラリ底部４２をバンプ５１ａ面に押し付ける。
最後に、第７の工程として、図４（ｇ）に示すように、前記キャピラリ４０を前記第１導体１０の方向へと横移動させる。
これらの工程をキャピラリの動きで示すと、図４（ｈ）に示すように、▲１▼→▲２▼→▲３▼→▲４▼→▲５▼→▲６▼→▲７▼となり、これらの工程を経ることで、上面が傾斜面となるバンプを第２導体２０面上に形成することができる。
【００１９】
上記の各工程におけるキャピラリ４０の移動距離及び移動方向の制御は、それによって形成されたバンプが、図５（ａ）、（ｂ）に示すように、第１導体１０と第２導体２０とで結ぶ垂直断面視において、バンプ５１ａの上面端部（イ）（ロ）間の第２導体２０面に対する傾斜角θが、第１導体に向かって２°〜６０°の開角になるように行う。
上記の工程において、キャピラリ４０を図４（ｈ）の破線のように移動させると、バンプ５１ａ上面に積載されるワイヤ５０の屈曲部５１ｂの量が変わるため、最終的に形成されるバンプ５１ａの高さを、図５（ａ）のように高くしたり、図５（ｂ）のように上部面積を基底部面積より広くしたりすることもできる。
【００２０】
次に、上記実施形態により形成されるバンプは、予め第２導体２０上にボールボンディングにより形成されるバンプであって、図３，図５，図６に示すように、上面が平面又は凹面で形成されているとともに、第１導体１０と第２導体２０とで結ぶ垂直断面視、バンプの上面端部（イ）、（ロ）間の第２導体２０面に対する傾斜角θが、第１導体１０に向かって２°〜６０°の開角に形成されているものである。
【００２１】
上記のような形状のバンプを、予め第２導体２０面上に形成しておくと、図６に示すように、第１導体１０から第２導体２０にワイヤループ接続するときに、傾斜面が案内面となって、ワイヤの曲がりが少なくなり、ワイヤ同士の接触やワイヤの弛みによる回路基板面との接触等を少なくすることができる。
【００２２】
【発明の効果】
以上説明したように、本発明のバンプの形成方法によれば、第２導体面上に、第１導体と第２導体とで結ぶ垂直断面視、バンプの上面端部間の第２導体面に対する傾斜角が、第１導体に向かって２°〜６０°の開角となるような傾斜面を有するバンプを形成できるので、第１導体から第２導体にワイヤループ接続するときに、傾斜面が案内面となって、ワイヤの曲がりを少なくすることができ、ワイヤ同士の接触やワイヤの弛みによる回路基板面との接触等を少なくすることができるとともに、バンプとワイヤ接合時のワイヤ曲がりの発生も防止できる
【００２３】
また、傾斜角を自在に形成することができるので、傾斜角を小さくすれば、ワイヤ残りを少なくすることができ、パッケージングを薄くすることができる。また、第１導体が高い位置にあれば、傾斜角を大きくすることで、ワイヤの接続を容易にかつ完全にすることができる。
【００２４】
また、バンプ上面の面積を大きくすることができるので、ワイヤとの接合面積を拡大でき、接合強度を高めることができる。
【図面の簡単な説明】
【図１】本発明に係るバンプの形成方法を実施する前の状態を示し、回路基板上の第１導体と第２導体及びキャピラリの位置関係を示す図である。
【図２】請求項１に係るバンプの形成方法に対応した実施の形態を示す工程図である。
【図３】上記実施の形態により形成されたバンプの断面図である。
【図４】請求項２に係るバンプの形成方法に対応した実施の形態を示す工程図である。
【図５】図４に示す実施の形態により形成されたバンプの断面図である。
【図６】本発明に係るバンプの形成方法の実施の形態により形成されたバンプを用いてワイヤボンディングした例である。
【図７】従来のバンプ形成方法で形成されたバンプを用いてワイヤボンディングした図である。
【図８】従来のバンプ形成方法で形成されたバンプを用いてワイヤボンディングした場合の問題点を説明する図である。
【符号の説明】
１０ 第１導体
２０ 第２導体
３０ 回路基板
４０ キャピラリ
４１ 貫通孔
４２ キャピラリ底面
５０ ワイヤ
５１ ボール
５１ａ バンプ

Claims (2)

  1. 第１導体上に１次ボンディングを行うとともに、第２導体上に２次ボンディングを行って、第１導体と第２導体間をワイヤボンディングするにあたり、予め第２導体上にボールボンディングによりバンプを形成する方法であって、
    キャピラリを第２導体上に下降させ、ワイヤの先端に形成されたボールを第２導体上にボンディングしてバンプを形成する第１の工程と、
    前記第１の工程後に、前記キャピラリを垂直上昇させる第２の工程と、
    前記第２の工程後に、前記キャピラリを前記第１導体の位置する方向と反対方向へ横移動させる第３の工程と、
    前記第３の工程後に、前記キャピラリを下降させてキャピラリ底部をバンプ面に押し付ける第４の工程と、
    前記第４の工程後に、前記キャピラリを前記第１導体の方向へ横移動させ、バンプ上面が前記第１導体方向に向かって高くなる傾斜平面となるようにする第５の工程と、
    を備えたことを特徴とするバンプの形成方法。
  2. 第１導体上に１次ボンディングを行うとともに、第２導体上に２次ボンディングを行って、第１導体と第２導体間をワイヤボンディングするにあたり、予め第２導体上にボールボンディングによりバンプを形成する方法であって、
    キャピラリを第２導体上に下降させ、ワイヤの先端に形成されたボールを第２導体上にボンディングしてバンプを形成する第１の工程と、
    前記第１の工程後に、前記キャピラリを垂直上昇させる第２の工程と、
    前記第２の工程後に、前記キャピラリを前記第１導体の位置する方向へ横移動させる第３の工程と、
    前記第３の工程後に、前記キャピラリを垂直上昇させる第４の工程と、
    前記第４の工程後に、前記キャピラリを前記第１導体の位置する方向と反対方向へ横移動させる第５の工程と、
    前記第５の工程後に、前記キャピラリを下降させてキャピラリ底部をバンプ面に押し付ける第６の工程と、
    前記第６の工程後に、前記キャピラリを前記第１導体の位置する方向へ横移動させ、バンプ上面が前記第１導体方向に向かって高くなる傾斜平面となるようにする第７の工程と、
    を備えたことを特徴とするバンプの形成方法。
JP2002231931A 2001-03-16 2002-08-08 バンプの形成方法及びバンプ Expired - Lifetime JP3913134B2 (ja)

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TW91120240A TW564538B (en) 2001-03-16 2002-09-05 Wire bonding method, method of forming bump and bump
KR10-2002-0053839A KR100533487B1 (ko) 2002-08-08 2002-09-06 와이어 본딩 방법, 범프의 형성 방법 및 범프
US10/243,201 US6715666B2 (en) 2002-08-08 2002-09-13 Wire bonding method, method of forming bump and bump
CNB021429669A CN1230884C (zh) 2002-08-08 2002-09-13 引线键合方法以及凸点形成方法和凸点

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