JP3887993B2 - Icチップと回路基板との接続方法 - Google Patents
Icチップと回路基板との接続方法 Download PDFInfo
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- JP3887993B2 JP3887993B2 JP13189899A JP13189899A JP3887993B2 JP 3887993 B2 JP3887993 B2 JP 3887993B2 JP 13189899 A JP13189899 A JP 13189899A JP 13189899 A JP13189899 A JP 13189899A JP 3887993 B2 JP3887993 B2 JP 3887993B2
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- circuit board
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Description
【発明の属する技術分野】
本発明は、ICチップの電極と回路基板の電極とをワイヤボンディングで形成された導線によって電気的に接続する方法に関する。
【0002】
【従来の技術】
ICチップのパッドおよび回路基板(配線基板)のランドとをAuワイヤ(導線)を用いたワイヤボンディングにて電気的に接続する場合に、一般に、回路基板上の配線材料がCu等のようなAuワイヤとの接合性の悪い材料であると、ランド上に直接ボンディングを行うことができないとされている。
【0003】
このような回路基板でICチップの電極(パッド)および回路基板の電極(ランド)とにワイヤボンディングを行うには、まず、回路基板のランド上にAuワイヤにて予め接合性のよいボールボンディングを行ってバンプを予め形成しておく。次に、ICチップ上のパッドに1次ボンディングを行い、続いてランド上に形成しておいたバンプに2次ボンディングを行う。以上の工程によって、Auワイヤボンディングの接合性を確保している。
【0004】
この方法によれば、回路基板のCu等のランドとAuワイヤは接合性のよいボールボンディングで接合し、さらにランド上のバンプとAuワイヤは通常のウェッジボンディングで同質同材のAu同士の接合を行うことによって良好な接合を得ることができる。
【0005】
【発明が解決しようとする課題】
上記の接続方法では、Auワイヤと被ボンディング材料とを超音波振動によって固着させるだけでなく、熱を加えながらボンディングを行うことにより両金属間の拡散による合金層形成を促して接合性を得るという方法を用いている。従って、回路基板およびICチップはボンディング時において加熱されている。このため、回路基板のランドとしてCu等の卑金属を用いる場合には、熱によりランドが必ず酸化してしまう。
【0006】
このランドの酸化を防止してボンディングを行う方法として、酸化が急速に進行しない程度の低温(100〜120℃程度)で回路基板等を加熱してボンディングする方法がある。
ここで、従来行われているICチップと回路基板との接続方法におけるボンディングの順序を図4、5を用いて説明する。図4、5はICチップと回路基板とのボンディング順序を模式的に示したものであり、図中ICチップ上のパッドおよび回路基板上のランドは省略している。ボンディングの順序としては、まず、図4(a)〜(e)に示すように、回路基板上のランドにボールボンディングによってバンプ6を形成し、続いてICチップ3上のパッドからバンプ6にワイヤボンディングを行って導線10を形成する工程を繰り返し行う方法があり、さらに、図5(a)〜(c)に示すように、1つのICチップ3に対応するすべてのランドにボールボンディングを行ってバンプ6を形成した後、ICチップ3からランド上のバンプ6へのボンディングを行って導線10を形成する方法がある。
【0007】
しかしながら、これらいずれの方法においても、回路基板上にワイヤボンディングすべきICチップが複数設置されておりボンディング点数が多数ある場合には、ボンディングに時間がかかりすぎてしまい、上記のように酸化が急速に進行しない程度の温度でボンディングを行ったとしても、最後の方のICチップに対応したランドにボールボンディングを行う前にランドが酸化してしまう。
【0008】
従って、回路基板上に複数のICチップが設置されている場合には、ボンディングが進むにつれて回路基板におけるまだボンディングが終わっていないランドが酸化されてしまい、ボールボンディングが接合できなくなってしまうという問題があった。
本発明は、上記点に鑑み、複数のICチップと回路基板とをワイヤボンディングで形成された導線によって電気的に接続する方法において、ランドが酸化する前にランドへのボンディングを行って接合性を確保することを目的とする。
【0009】
【課題を解決するための手段】
本発明は、上記目的を達成するために、請求項1記載の発明では、ワイヤボンディングの2次側となるすべてのランド(4)についてバンプ(6)を形成するバンプ形成工程と、パッド(3a)を1次側とするとともにバンプ(6)を2次側としてワイヤボンディングを行うことにより導線(10)を形成し、ICチップ(3)および回路基板(1)とを電気的に接続するボンディング工程とを備え、バンプ形成工程は、回路基板(1)の表面温度が均一でない場合には、回路基板(1)における温度の高い位置にあるランド(4)から温度の低い位置にあるランド(4)の順にバンプ(6)を形成することを特徴としている。
【0010】
これにより、複数のICチップ(3)が設置されている回路基板(1)において、ICチップ(3)と回路基板(1)とをワイヤボンディングにて接続する際に、まず最初にすべてのランド(4)についてボンディングを行ってバンプ(6)を形成するので、最後の方にボンディングするランド(4)についても酸化する前にボンディングを行うことができ、ランド(4)とバンプ(6)との接合性を確保することができる。
【0011】
また、回路基板(1)の表面温度が均一でない場合は、温度が高い位置にあるランド(4)から酸化する。そこで、回路基板(1)における温度の高い位置にあるランド(4)から温度の低い位置にあるランド(4)の順にバンプ(6)を形成することで、ランド(4)が酸化する前に効率よくランド(4)にボンディングを行うことができる。
【0012】
なお、上記各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。
【0013】
【発明の実施の形態】
以下、本発明を適用したICチップと回路基板との接続方法について図に基づいて説明する。
図1および2は、本発明の第1実施形態に係るICチップ3と回路基板1との接続方法を示す工程図であり、図3はボンディング後の回路基板を示している。なお、図3ではICチップ3上のパッド3aを省略している。以下、接続工程順に説明する。
【0014】
まず、回路基板(セラミック基板やプリント基板などの基板)1を用意する。この回路基板1の一面上には、ワイヤボンディングすべきICチップ3が複数設置されている。このICチップ3は、ダイマウントペースト2(例えばはんだやAgペースト)により回路基板1上にダイマウントされており、ICチップ3上には、ICチップ3の内部回路と電気的に接続されたパッド3aが設けられている。一方、回路基板1の一面上のうちICチップ3の設置領域と異なる部分には、Cu、Ni、フラッシュAuめっき等のようにAuワイヤと接合性の悪い配線材料を用いたランド4が形成されている。
【0015】
次に、回路基板1上に形成されているすべてのICチップ3におけるすべてのパッド3aおよびこれらに対応するランド4の位置認識を画像処理装置により行う。
そして、図1(a)〜(d)に示すように、このランド4上に、Auよりなる凸状のAuバンプ6を、Auワイヤ5を用いてボールボンディングにより形成する。これは、ICチップ3のパッド3aとランド4との間をAuワイヤ5を用いてワイヤボンディングして後述の導線10を形成する場合に、Auバンプ6と導線10とを同質材質のAuにより構成することにより、導線10の接合性を良くするためである。
【0016】
具体的には、図1(a)に示すように、キャピラリ7の貫通孔7aにAuワイヤ5を挿通した状態で、トーチ電極8からの放電によりキャピラリ7から突出したAuワイヤ5の先端にボール5aを形成する。
次に、図1(b)に示すように、キャピラリ7をランド4上に位置させてボールボンディングを行う。このボールボンディングによってAuバンプ6を形成する。
【0017】
次に、図1(c)に示すように、キャピラリ7を後方(Auバンプ6に対しICチップ3と反対側の方向)に移動させてウェッジボンディングを行う。このとき、キャピラリ7をランド4上に押しつけてAuバンプ6から延びるAuワイヤ5を切断する。
次に、再度、キャピラリ7を上方に移動させ、図1(d)に示すように、トーチ電極8からの放電により、Auワイヤ5の先端に第1のボール5aを形成する。
【0018】
以上の図1(a)〜(d)の工程を順次繰り返し、複数のICチップ3とのワイヤボンディングの2次側となるすべてのランド4上にAuバンプ6を形成していく。図3(b)はすべてのランド4上にAuバンプ6を形成した状態の配線基板1を示す。
次に、図2(a)に示すように、キャピラリ7の貫通孔7aにAuワイヤ5を挿通した状態で、トーチ電極8からの放電によりキャピラリ7から突出したAuワイヤ5の先端にボール5aを形成する。
【0019】
次に、図2(b)に示すように、ICチップ3に形成されたパッド3a上にボールボンディング(1次ボンディング)を行うとともに、図2(c)に示すように、上記工程で形成したランド4上のバンプ6にウェッジボンディング(2次ボンディング)を行う。これにより、ICチップ3のパッド3aとランド4上のバンプ6との間にAuよりなる上記導線10が形成され、ICチップ3と回路基板1とが電気的に接続される。
【0020】
以上の図2(a)〜(c)の工程を順次繰り返して、複数のICチップ3におけるすべてのパッド3aについてボンディングを行う。図4(c)は、以上の図2(a)〜(c)の工程により、すべてのパッド3aにボンディングが終了した後の回路基板1を示している。
以上のように、本発明によれば、回路基板1上にワイヤボンディングすべきICチップ3が複数設置されている場合であっても、まず、ワイヤボンディングの2次側となるすべてのランド4についてボンディングを行うことにより、まだボンディングの終わっていないランド4が酸化する前にすべてのランド4にボンディングを行うことができる。従って、ランド4とバンプ6との接合性を確保することが可能となる。
【0021】
本発明者らの実験検討によれば、本実施形態によるICチップと回路基板との接合方法で、回路基板1上のランド4が酸化する前に少なくとも1000本のワイヤボンディングを行うことが可能となることが確認された。
(他の実施形態)
ボンディングを行う際に、回路基板1において温度のバラツキがある場合には、温度の高い位置にあるランド4から先にボンディングを行うことにより、ランド4が酸化する前に効率よくボンディングを行うことができる。
【0022】
具体的には、まず、ボンディング時における回路基板1の温度分布を予め測定しておく。そして、この測定温度に基づいて回路基板1のうち温度の高い位置に近いランド4から先にボンディングを行うようにする。
【図面の簡単な説明】
【図1】第1のボールにてランド上にバンプを形成する手順を示す工程図である。
【図2】第2のボールにてパッドとバンプとを接続する手順を示す工程図である。
【図3】ICチップと配線基板とを接続する各段階における配線基板の状態を示す平面図である。
【図4】従来技術のICチップと配線基板との接続手順を示す工程図である。
【図5】従来技術のICチップと配線基板との接続手順を示す工程図である。
【符号の説明】
1…回路基板、3…ICチップ、3a…パッド、4…ランド、5…Auワイヤ、6…凸状のAuバンプ、10…導線。
Claims (1)
- 複数のICチップ(3)におけるパッド(3a)および回路基板(1)におけるランド(4)とをワイヤボンディングで形成された導線(10)によって電気的に接続する方法であって、
前記複数のICチップ(3)に対応するとともにワイヤボンディングの2次側となるすべての前記ランド(4)についてバンプ(6)を形成するバンプ形成工程と、
前記バンプ形成工程の後、前記パッド(3a)を1次側とするとともに前記バンプ(6)を2次側としてワイヤボンディングを行うことにより前記導線(10)を形成し、前記ICチップ(3)および前記回路基板(1)とを電気的に接続するボンディング工程とを備え、
前記バンプ形成工程は、前記回路基板(1)の表面温度が均一でない場合には、回路基板(1)における温度の高い位置にある前記ランド(4)から温度の低い位置にある前記ランド(4)の順に前記バンプ(6)を形成することを特徴とするICチップと回路基板との接続方法。
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