JP2010141112A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP2010141112A JP2010141112A JP2008315754A JP2008315754A JP2010141112A JP 2010141112 A JP2010141112 A JP 2010141112A JP 2008315754 A JP2008315754 A JP 2008315754A JP 2008315754 A JP2008315754 A JP 2008315754A JP 2010141112 A JP2010141112 A JP 2010141112A
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- semiconductor device
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- surface electrode
- semiconductor element
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 168
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 27
- 238000005304 joining Methods 0.000 abstract description 9
- 229910000679 solder Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 238000002788 crimping Methods 0.000 description 6
- 230000004907 flux Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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Abstract
【解決手段】外部と電気的に接続可能な外部電極13が形成された基材11と、導電性ペーストからなる表面電極16が形成された半導体素子15とを備え、基材11に半導体素子15が実装されてなる半導体装置10であって、基材11の外部電極13と半導体素子15の表面電極16とは、ワイヤボンディングによって金ワイヤ17で電気的に接続されている。
【選択図】図1
Description
図1は、本実施の形態の半導体装置10の一構成例を示す図である。
次に、上記構成を有する半導体装置10の製造方法について詳細に説明する。
金ワイヤ17の直径:25μm、
ワイヤボンダのヒーター温度:150℃
表面電極16の膜厚、起伏の差、起伏のピッチ:約20μm、約10μm、100μm
なお、表面電極16は、導電性ペーストを印刷し焼成した後の寸法であり、起伏のピッチは、マスクのメッシュの細かさで大体決まる。
11 基材
12 基材電極
13 外部電極
15 半導体素子
16 表面電極
17 金ワイヤ(接続部材)
18 イニシャルボール
19 スタッドバンプ
20 イニシャルボール
21 キャピラリ
Claims (12)
- 外部と電気的に接続可能な外部電極が形成された基材と、導電性ペーストからなる表面電極が形成された半導体素子とを備え、上記基材に上記半導体素子が実装されてなる半導体装置であって、
上記基材の外部電極と上記半導体素子の表面電極とは、ワイヤボンディングによって接続部材で電気的に接続されていることを特徴とする半導体装置。 - 上記接続部材は、金ワイヤであることを特徴とする請求項1に記載の半導体装置。
- 上記ワイヤボンディングは、ボールボンディングが用いられていることを特徴とする請求項2に記載の半導体装置。
- 上記ボールボンディングのファーストボンディングは、上記半導体素子の表面電極に行われていることを特徴とする請求項3に記載の半導体装置。
- 上記表面電極に行われたファーストボンディングによる接合後のボールの高さは、該表面電極の最も厚い部分よりも高いことを特徴とする請求項4に記載の半導体装置。
- 上記半導体素子の表面電極に、スタッドバンプが形成されており、
上記ボールボンディングのファーストボンディングは、上記基材の外部電極に行われ、セカンドボンディングは、上記表面電極に形成されたスタッドバンプに行われていることを特徴とする請求項3に記載の半導体装置。 - 上記表面電極に形成されたスタッドバンプの高さは、該表面電極の最も厚い部分よりも高いことを特徴とする請求項6に記載の半導体装置。
- 外部と電気的に接続可能な外部電極が形成された基材と、導電性ペーストからなる表面電極が形成された半導体素子とを備え、上記基材に上記半導体素子が実装されてなる半導体装置の製造方法であって、
上記基材の外部電極と上記半導体素子の表面電極とを、ワイヤボンディングによって接続部材で電気的に接続することを特徴とする半導体装置の製造方法。 - 上記接続部材として、金ワイヤを用いることを特徴とする請求項8に記載の半導体装置の製造方法。
- 上記ワイヤボンディングとして、ボールボンディングを用いることを特徴とする請求項9に記載の半導体装置の製造方法。
- 上記半導体素子の表面電極に、ファーストボンディングを行うことを特徴とする請求項10に記載の半導体装置の製造方法。
- 上記ボールボンディングは、
上記半導体素子の表面電極に、スタッドバンプを形成するステップと、
上記基材の外部電極に、ファーストボンディングを行うステップと、
上記表面電極に形成したスタッドバンプに、セカンドボンディングを行うステップとを含むことを特徴とする請求項10に記載の半導体装置の製造方法。
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JP2008315754A JP2010141112A (ja) | 2008-12-11 | 2008-12-11 | 半導体装置および半導体装置の製造方法 |
US12/633,898 US20100148364A1 (en) | 2008-12-11 | 2009-12-09 | Semiconductor device and method for producing semiconductor device |
CN2009102541947A CN101752335B (zh) | 2008-12-11 | 2009-12-10 | 半导体装置以及半导体装置的制造方法 |
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