JP3181884U - 結晶シリコンインゴット及びそれから製造されるシリコンウェーハ - Google Patents

結晶シリコンインゴット及びそれから製造されるシリコンウェーハ Download PDF

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Publication number: JP3181884U
Authority: JP; Japan
Prior art keywords: silicon; particles; ingot; crystalline; crystalline silicon
Prior art date: 2011-11-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP2012006633U

Other languages

English (en)

Japanese (ja)

Inventor

崇文藍

文懷余

瑜民楊

鴻昇周

松林許

文慶徐

Original Assignee

中美▲せき▼晶製品股▲ふん▼有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-11-28

Filing date

2012-10-31

Publication date

2013-02-28

2012-10-31 Application filed by 中美▲せき▼晶製品股▲ふん▼有限公司 filed Critical 中美▲せき▼晶製品股▲ふん▼有限公司

2013-02-28 Application granted granted Critical

2013-02-28 Publication of JP3181884U publication Critical patent/JP3181884U/ja

2022-10-31 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 60
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 82
229910052710 silicon Inorganic materials 0.000 title claims description 61
239000010703 silicon Substances 0.000 title claims description 61
239000011856 silicon-based particle Substances 0.000 claims abstract description 56
239000002245 particle Substances 0.000 claims abstract description 48
230000006911 nucleation Effects 0.000 claims abstract description 39
238000010899 nucleation Methods 0.000 claims abstract description 39
230000007547 defect Effects 0.000 claims abstract description 31
230000001737 promoting effect Effects 0.000 claims abstract description 28
239000013078 crystal Substances 0.000 claims description 66
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
229920005591 polysilicon Polymers 0.000 claims description 20
229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 12
230000008018 melting Effects 0.000 claims description 5
238000002844 melting Methods 0.000 claims description 5
239000000463 material Substances 0.000 claims description 4
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
230000001788 irregular Effects 0.000 claims description 3
210000004027 cell Anatomy 0.000 description 29
235000012431 wafers Nutrition 0.000 description 19
238000000034 method Methods 0.000 description 17
238000006243 chemical reaction Methods 0.000 description 12
238000010586 diagram Methods 0.000 description 11
238000004519 manufacturing process Methods 0.000 description 9
239000002994 raw material Substances 0.000 description 7
238000005516 engineering process Methods 0.000 description 5
238000007711 solidification Methods 0.000 description 5
230000008023 solidification Effects 0.000 description 5
238000005266 casting Methods 0.000 description 4
238000009826 distribution Methods 0.000 description 4
229910052751 metal Inorganic materials 0.000 description 4
239000002184 metal Substances 0.000 description 4
229910021417 amorphous silicon Inorganic materials 0.000 description 2
230000008901 benefit Effects 0.000 description 2
239000002800 charge carrier Substances 0.000 description 2
238000007796 conventional method Methods 0.000 description 2
238000001514 detection method Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
239000010453 quartz Substances 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
239000002210 silicon-based material Substances 0.000 description 2
238000003892 spreading Methods 0.000 description 2
230000035882 stress Effects 0.000 description 2
230000008646 thermal stress Effects 0.000 description 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
229910010293 ceramic material Inorganic materials 0.000 description 1
PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
210000001787 dendrite Anatomy 0.000 description 1
229910002804 graphite Inorganic materials 0.000 description 1
239000010439 graphite Substances 0.000 description 1
239000003102 growth factor Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
239000012535 impurity Substances 0.000 description 1
231100000252 nontoxic Toxicity 0.000 description 1
230000003000 nontoxic effect Effects 0.000 description 1
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
238000002161 passivation Methods 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
229910010271 silicon carbide Inorganic materials 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
230000007847 structural defect Effects 0.000 description 1
238000004781 supercooling Methods 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Physics & Mathematics (AREA)
Inorganic Chemistry (AREA)
Electromagnetism (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Silicon Compounds (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

JP2012006633U 2011-11-28 2012-10-31 結晶シリコンインゴット及びそれから製造されるシリコンウェーハ Expired - Fee Related JP3181884U (ja)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
TW100143484		2011-11-28
TW100143484		2011-11-28
TW101208779		2012-05-10
TW101208779		2012-05-10

Publications (1)

Publication Number	Publication Date
JP3181884U true JP3181884U (ja)	2013-02-28

Family

ID=47502601

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
JP2012006633U Expired - Fee Related JP3181884U (ja)	2011-11-28	2012-10-31	結晶シリコンインゴット及びそれから製造されるシリコンウェーハ
JP2012241091A Expired - Fee Related JP5883766B2 (ja)	2011-11-28	2012-10-31	結晶シリコンインゴットの製造方法

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
JP2012241091A Expired - Fee Related JP5883766B2 (ja)	2011-11-28	2012-10-31	結晶シリコンインゴットの製造方法

Country Status (5)

Country	Link
JP (2)	JP3181884U (ko)
KR (3)	KR101594474B1 (ko)
CN (1)	CN103088420A (ko)
DE (2)	DE202012011360U1 (ko)
SG (1)	SG190514A1 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
SG190514A1 (en)	2011-11-28	2013-06-28	Sino American Silicon Prod Inc	Crystalline silicon ingot and method of fabricating the same
JP2015214473A (ja) *	2014-04-24	2015-12-03	京セラ株式会社	多結晶シリコンのインゴットの製造方法
JP6487675B2 (ja) *	2014-11-21	2019-03-20	シャープ株式会社	多結晶シリコンインゴット製造方法、多結晶シリコンインゴットの用途の製造方法及び多結晶シリコンインゴット
TWI557281B (zh) *	2015-07-17	2016-11-11	Sino American Silicon Prod Inc	多晶矽晶鑄錠、多晶矽晶棒及多晶矽晶片
US10825940B2 (en) *	2015-08-26	2020-11-03	Sino-American Silicon Products Inc.	Polycrystalline silicon column and polycrystalline silicon wafer
DE102015216734A1 (de)	2015-09-02	2017-03-02	Alzchem Ag	Tiegel zur Herstellung von Silicium-Ingots, Verfahren zu dessen Herstellung sowie Silicium-Ingot
JP6562415B2 (ja) *	2015-10-01	2019-08-21	国立大学法人名古屋大学	シリコンインゴット及びその製造方法
CN105568374A (zh) *	2016-03-16	2016-05-11	常熟华融太阳能新型材料有限公司	一种多晶铸锭用选择性全熔高效坩埚
GB2550415A (en) *	2016-05-18	2017-11-22	Rec Solar Pte Ltd	Silicon ingot growth crucible with patterned protrusion structured layer
DE102018206969B3 (de)	2018-05-04	2019-06-06	Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.	Verfahren und Tiegel zur Herstellung von multikristallinem Silicium mittels gerichteter Erstarrung sowie Verfahren zur Herstellung des Tiegels und Verwendung des Tiegels
DE102018206982A1 (de)	2018-05-04	2019-11-07	Alzchem Trostberg Gmbh	Tiegel zur Herstellung von multikristallinem Silicium mittels gerichteter Erstarrung, Verfahren zu dessen Herstellung und dessen Verwendung, sowie Verfahren zur Herstellung von multikristallinem Silicium mittels gerichteter Erstarrung

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JP2664444B2 (ja) *	1988-12-07	1997-10-15	株式会社日立製作所	分解溶融組成結晶体の製造方法
DE19607098C2 (de) *	1996-02-24	1999-06-17	Ald Vacuum Techn Gmbh	Verfahren und Vorrichtung zum gerichteten Erstarren einer Schmelze aus Silizium zu einem Block in einem bodenlosen metallischen Kaltwandtiegel
JP3852147B2 (ja) *	1996-12-27	2006-11-29	Ｊｆｅスチール株式会社	太陽電池用多結晶シリコン・インゴットの製造方法
AU2003254919A1 (en) *	2002-08-12	2004-03-03	Sharp Kabushiki Kaisha	Plate-type silicon, method of producing the plate-type silicon, solar battery, and base plate for producing the plate-type silicon
JP4054873B2 (ja) *	2003-07-17	2008-03-05	国立大学法人東北大学	Ｓｉ系結晶の製造方法
AU2007205947B2 (en) *	2006-01-20	2012-03-08	Amg Idealcast Solar Corporation	Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
CN101370970B (zh) *	2006-01-20	2014-05-14	Amg艾迪卡斯特太阳能公司	制造单晶铸硅的方法和装置以及用于光电领域的单晶铸硅实体
KR20100050510A (ko) *	2007-07-20	2010-05-13	비피 코포레이션 노쓰 아메리카 인코포레이티드	시드 결정으로부터 캐스트 실리콘을 제조하는 방법
JP2012516572A (ja)	2009-01-30	2012-07-19	エイエムジー・アイデアルキャスト・ソーラー・コーポレーション	シード層及びシード層の製造方法
JP5676900B2 (ja) *	2010-03-26	2015-02-25	三菱マテリアル株式会社	多結晶シリコンインゴットの製造方法
SG190514A1 (en)	2011-11-28	2013-06-28	Sino American Silicon Prod Inc	Crystalline silicon ingot and method of fabricating the same

2012
- 2012-10-23 SG SG2012078762A patent/SG190514A1/en unknown
- 2012-10-31 JP JP2012006633U patent/JP3181884U/ja not_active Expired - Fee Related
- 2012-10-31 JP JP2012241091A patent/JP5883766B2/ja not_active Expired - Fee Related
- 2012-11-08 CN CN2012104418506A patent/CN103088420A/zh active Pending
- 2012-11-08 KR KR1020120126116A patent/KR101594474B1/ko active IP Right Grant
- 2012-11-27 DE DE202012011360U patent/DE202012011360U1/de not_active Expired - Lifetime
- 2012-11-27 DE DE102012023120A patent/DE102012023120A1/de not_active Withdrawn
2015
- 2015-07-17 KR KR1020150101825A patent/KR101738077B1/ko active IP Right Grant
2016
- 2016-08-29 KR KR1020160110350A patent/KR101815620B1/ko active IP Right Grant

Also Published As

Publication number	Publication date
JP2013112603A (ja)	2013-06-10
KR101594474B1 (ko)	2016-02-16
KR101738077B1 (ko)	2017-05-19
JP5883766B2 (ja)	2016-03-15
KR20150088776A (ko)	2015-08-03
SG190514A1 (en)	2013-06-28
KR20160105751A (ko)	2016-09-07
KR20130059272A (ko)	2013-06-05
DE102012023120A1 (de)	2013-05-29
DE202012011360U1 (de)	2012-12-05
KR101815620B1 (ko)	2018-01-05
CN103088420A (zh)	2013-05-08

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2021-02-06	LAPS	Cancellation because of no payment of annual fees

Publication	Publication Date	Title
JP3181884U (ja)	2013-02-28	結晶シリコンインゴット及びそれから製造されるシリコンウェーハ
US9493357B2 (en)	2016-11-15	Method of fabricating crystalline silicon ingot including nucleation promotion layer
JP5514444B2 (ja)	2014-06-04	幾何学的多結晶成型シリコンの製造方法および装置および光電変換用多結晶成型シリコン本体
TWI620838B (zh)	2018-04-11	包含成核促進顆粒之矽晶鑄錠及其製造方法
US8591649B2 (en)	2013-11-26	Methods for manufacturing geometric multi-crystalline cast materials
JP2009051720A (ja)	2009-03-12	Ｓｉバルク多結晶インゴットの製造方法
TWI444509B (zh)	2014-07-11	製造矽晶鑄錠之方法
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US10087080B2 (en)	2018-10-02	Methods of fabricating a poly-crystalline silcon ingot from a nucleation promotion layer comprised of chips and chunks of silicon-containing particles
TWI452184B (zh)	2014-09-11	製造矽晶鑄錠之方法
US10065863B2 (en)	2018-09-04	Poly-crystalline silicon ingot having a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom
TWI516645B (zh)	2016-01-11	矽晶鑄錠、其製造方法及從其製成的矽晶圓
US9903043B2 (en)	2018-02-27	Crucible assembly and method of manufacturing crystalline silicon ingot by use of such crucible assembly
TWI465615B (zh)	2014-12-21	多晶矽晶片、多晶矽晶錠及製造多晶矽晶錠之方法
US20170016143A1 (en)	2017-01-19	Polycrystalline silicon ingot, polycrystalline silicon brick and polycrystalline silicon wafer
JP2010269943A (ja)	2010-12-02	シリコン多結晶インゴットおよびシリコン多結晶ウェハー
TWM459985U (zh)	2013-08-21	矽晶種