JP2020522728A - 金属層を有する層状構造を備えたフレキシブル部品 - Google Patents
金属層を有する層状構造を備えたフレキシブル部品 Download PDFInfo
- Publication number
- JP2020522728A JP2020522728A JP2019561901A JP2019561901A JP2020522728A JP 2020522728 A JP2020522728 A JP 2020522728A JP 2019561901 A JP2019561901 A JP 2019561901A JP 2019561901 A JP2019561901 A JP 2019561901A JP 2020522728 A JP2020522728 A JP 2020522728A
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- JP
- Japan
- Prior art keywords
- layer
- flexible
- coated substrate
- layers
- mox
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 62
- 239000002184 metal Substances 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 229910052709 silver Inorganic materials 0.000 claims abstract description 23
- 229910052802 copper Inorganic materials 0.000 claims abstract description 21
- 229910052737 gold Inorganic materials 0.000 claims abstract description 16
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 238000005452 bending Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000000654 additive Substances 0.000 claims abstract description 9
- 230000000996 additive effect Effects 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 336
- 239000004020 conductor Substances 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 27
- 229910015269 MoCu Inorganic materials 0.000 claims description 25
- 229910015153 MoAg Inorganic materials 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 7
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 239000011888 foil Substances 0.000 claims description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 2
- 239000011707 mineral Substances 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- 239000010949 copper Substances 0.000 description 43
- 229910052750 molybdenum Inorganic materials 0.000 description 19
- 239000010931 gold Substances 0.000 description 18
- 239000011733 molybdenum Substances 0.000 description 16
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- 239000000843 powder Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- 239000012925 reference material Substances 0.000 description 10
- 239000000523 sample Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 239000012212 insulator Substances 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- 239000011651 chromium Substances 0.000 description 8
- 230000001419 dependent effect Effects 0.000 description 8
- 239000010955 niobium Substances 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 238000009864 tensile test Methods 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000005477 sputtering target Methods 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 230000000977 initiatory effect Effects 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010944 silver (metal) Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 229920001621 AMOLED Polymers 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 239000011810 insulating material Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 150000002751 molybdenum Chemical class 0.000 description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 239000013074 reference sample Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000010290 vacuum plasma spraying Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- PDKHNCYLMVRIFV-UHFFFAOYSA-H molybdenum;hexachloride Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Mo] PDKHNCYLMVRIFV-UHFFFAOYSA-H 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920006280 packaging film Polymers 0.000 description 1
- 239000012785 packaging film Substances 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
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- 239000005011 phenolic resin Substances 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
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- 238000004663 powder metallurgy Methods 0.000 description 1
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- 150000003378 silver Chemical group 0.000 description 1
- 238000002490 spark plasma sintering Methods 0.000 description 1
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- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
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- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F3/15—Hot isostatic pressing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/02—Coating starting from inorganic powder by application of pressure only
- C23C24/04—Impact or kinetic deposition of particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
-
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Abstract
Description
一連の複数の実験の範囲内で、Mo系の各種金属層をポリイミド基板上に堆積させた。この場合に、各種化学組成を有する層を形成した。
一連の複数の実験の範囲内で、Mo系の各種金属層をポリイミド基板上に堆積した。この場合に、各種化学組成を有する層を形成した。
R0 測定開始時の電気抵抗
R0 表面固有抵抗
ε 最大伸び
εk 臨界伸び
Lconst 伸びが生じていない固定クランプ長さ
ρ 層抵抗
1 表示装置
2a/b データドライバ回路(列ドライバ)
3 ゲートドライバ構造(行ドライバ)
4 DC−DC変換回路
5 電気回路
6 タイミング制御回路(TCon)
7 デジタル−アナログ変換回路
8 放電部
9 バッファ回路
10 接触領域(「導体パッド」)
20 電気導体路
21 電気導体路
100 フレキシブル基板
110 緩衝層
120 ゲート電極
140 絶縁層(ゲート絶縁体、ゲート誘電体)
150 半導体層
170a ソース電極
170b ドレイン電極
180 絶縁性保護層
190 ピクセル電極層
200 フレキシブル基板
210 緩衝層
220 半導体層
221 ドープした半導体領域(ソース電極)
222 ドープした半導体領域(ドレイン電極)
230 ゲート絶縁体層
240 ゲート電極
250 絶縁層
260 制御及び/又は接触ソース電極層
270 制御及び/又は接触ドレイン電極層
280 平坦化層
290 ピクセル電極層
Claims (21)
- 1回又は繰り返しの曲げ応力、引張応力、及び/又はねじり応力を受けるフレキシブル基板(100、200)上に直接又は1つ以上の中間層を介して塗布された層平面内のMo系層の電気伝導率維持のための添加物の使用であって、前記添加物は、Cu、Ag、Au、又はそれらの混合物であることを特徴とする、添加物の使用。
- フレキシブル基板(100、200)と、
前記フレキシブル基板(100、200)上に直接又は1つ以上の中間層を介して配置され、直接隣接している半導体層又は電気絶縁性層を一方の側に有し、かつ直接隣接している半導体層又は電気絶縁性層を他方の側に有する金属層を有する少なくとも1つの層状構造と、を備えるフレキシブル被覆基板であって、
前記金属層は、
MoXから成る単層構造、
MoXとCu系層との組み合わせ又はMoXとAl系層との組み合わせから成る2層構造、又は、
2つのMoX層とその間に介在したCu系層又は2つのMoX層とその間に介在したAl系層から成る3層構造、から形成され、
ここで、Xは、Cu、Ag、Auの群から選択される1つ以上の元素であることを特徴とする、フレキシブル被覆基板。 - 少なくとも1つのMoX層において、Xは元素Cuであり、このMoCu層は、0.5原子%以上〜50原子%以下のCuを含有する、請求項2に記載のフレキシブル被覆基板。
- 少なくとも1つのMoX層において、Xは元素Agであり、このMoAg層は、10原子%以上〜50原子%以下のAgを含有する、請求項2又は3に記載のフレキシブル被覆基板。
- 少なくとも1つのMoX層において、Xは元素Auであり、このMoAu金属層は、5原子%以上〜20原子%以下のAuを含有する、請求項2〜4のいずれか1項に記載のフレキシブル被覆基板。
- Mo層中のXは、混晶の形で溶解して形成されている、請求項2〜5のいずれか1項に記載のフレキシブル被覆基板。
- 前記各々のMoX層は、200マイクロオームcm以下の層抵抗ρを有する、請求項2〜6のいずれか1項に記載のフレキシブル被覆基板。
- 前記フレキシブル基板(100、200)は、前記電気絶縁性層とは別に形成されている、請求項2〜7のいずれか1項に記載の構成部品。
- 前記フレキシブル基板(100、200)は、前記金属層に直接隣接している半導体層又は電気絶縁性層の1つによって形成される、請求項1〜7のいずれか1項に記載のフレキシブル被覆基板。
- 前記金属層に直接隣接している半導体層又は電気絶縁性層の少なくとも1つは、複数層(140、150、220、250)として形成されている、請求項2〜9のいずれか1項に記載のフレキシブル被覆基板。
- 前記金属層の厚さは、1μm以下、好ましくは500nm以下、好ましくは5nm〜100nmである、請求項2〜10のいずれか1項に記載のフレキシブル被覆基板。
- 前記フレキシブル基板(100、200)は、透明である、請求項2〜11のいずれか1項に記載のフレキシブル被覆基板。
- 前記金属層全体は、50マイクロオームcm以下の層抵抗ρを有する、請求項2〜12のいずれか1項に記載のフレキシブル被覆基板。
- 前記フレキシブル基板(100、200)は、
ポリマーと、
薄板ガラスと、
金属箔と、
鉱物材料と、
から成る群から選択される少なくとも1つの材料を含む、請求項2〜13のいずれか1項に記載のフレキシブル被覆基板。 - 前記金属層は、測定開始時の電気抵抗(R0)に対する電気抵抗(R)が、2%の弾性伸び(ε)で1.2以下の比率(R/R0)を有する、請求項2〜14のいずれか1項に記載のフレキシブル被覆基板。
- 前記フレキシブル被覆基板(100、200)は、少なくとも1つの導体路構造を有し、かつ前記金属層が前記少なくとも1つの導体路構造の一部となるように好適に形成されている、請求項2〜15のいずれか1項に記載のフレキシブル被覆基板。
- 前記金属層は、TFT構造の一部である、請求項2〜16のいずれか1項に記載のフレキシブル被覆基板。
- 前記金属層は、アクティブマトリックス構造の一部である、請求項2〜17のいずれか1項に記載のフレキシブル被覆基板。
- 前記フレキシブル被覆基板は、フレキシブル液晶ディスプレイ画面、フレキシブル有機ELディスプレイ画面、フレキシブル電気泳動ディスプレイ画面(電子ペーパー、E−Ink(登録商標))、フレキシブル太陽電池、エレクトロクロミックフレキシブル膜、フレキシブル薄膜電池の群から選択される部品である、請求項2〜18のいずれか1項に記載のフレキシブル被覆基板。
- フレキシブル基板(100、200)を準備する工程と、
直接又は1つ以上の中間層を介して前記フレキシブル基板(100、200)を少なくとも1つのMoX層の堆積により被覆する工程と、の少なくとも1つを含み、
特に、請求項2〜19のいずれか1項に記載のフレキシブル被覆基板、特に、請求項1に記載の添加物の使用で用いるフレキシブル被覆基板の製造方法であって、
前記MoX層は、0.5原子%以上のXを含有し、
ここで、Xは、Cu、Ag、Au成る群から選択される1つ以上の元素であることを特徴とする、フレキシブル被覆基板の製造方法。 - 前記少なくとも1つの金属層は、PVD法によって堆積される、請求項20に記載のフレキシブル被覆基板の製造方法。
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WO2023008475A1 (ja) * | 2021-07-30 | 2023-02-02 | 株式会社ニコン | 金属配線の製造方法、トランジスタの製造方法及び金属配線 |
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CN112582479A (zh) * | 2020-12-30 | 2021-03-30 | 福建华佳彩有限公司 | 一种顶栅结构的薄膜晶体管及制作方法 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002324874A (ja) * | 2001-04-25 | 2002-11-08 | Kyocera Corp | 配線基板 |
JP2002353353A (ja) * | 2001-05-22 | 2002-12-06 | Kyocera Corp | 半導体素子収納用パッケージ |
WO2004038049A1 (ja) * | 2002-10-28 | 2004-05-06 | A.L.M.T.Corp. | 複合材料、その製造方法およびそれを用いた部材 |
JP2006221162A (ja) * | 2005-02-07 | 2006-08-24 | Samsung Electronics Co Ltd | 表示装置用配線、薄膜トランジスタ表示板及びその製造方法 |
JP2014199920A (ja) * | 2013-03-12 | 2014-10-23 | 日立金属株式会社 | 電子部品用金属薄膜および金属薄膜形成用Mo合金スパッタリングターゲット材 |
JP2014529006A (ja) * | 2012-01-12 | 2014-10-30 | 宝鶏市科廸普有色金属加工有限公司 | モリブデン・ニオブ合金板ターゲット材の加工方法 |
WO2015029286A1 (ja) * | 2013-08-27 | 2015-03-05 | パナソニック株式会社 | 薄膜トランジスタ基板の製造方法及び薄膜トランジスタ基板 |
JP2015119175A (ja) * | 2013-11-15 | 2015-06-25 | 株式会社半導体エネルギー研究所 | 半導体装置及び表示装置 |
JP2016504495A (ja) * | 2012-11-29 | 2016-02-12 | エーリコン・サーフェス・ソリューションズ・アーゲー・トリューバッハ | 層表面の構造化方法およびそのための装置 |
US20160365368A1 (en) * | 2015-06-11 | 2016-12-15 | Samsung Display Co., Ltd. | Thin film transistor array panel |
JP2016224429A (ja) * | 2015-05-29 | 2016-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置、及び当該半導体装置を有する表示装置 |
JP2017503336A (ja) * | 2013-11-15 | 2017-01-26 | エボニック デグサ ゲーエムベーハーEvonik Degussa GmbH | 低接触抵抗薄膜トランジスタ |
JP2017028279A (ja) * | 2015-07-17 | 2017-02-02 | 株式会社半導体エネルギー研究所 | 半導体装置、照明装置、および車両 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002232142A (ja) * | 2001-01-30 | 2002-08-16 | Kyocera Corp | 多層配線基板およびその製造方法 |
JP4496518B2 (ja) * | 2002-08-19 | 2010-07-07 | 日立金属株式会社 | 薄膜配線 |
JP2007069561A (ja) * | 2005-09-09 | 2007-03-22 | Sumitomo Metal Mining Co Ltd | 2層フレキシブル基板とその製造方法 |
WO2009033503A1 (en) * | 2007-09-12 | 2009-03-19 | Flisom Ag | Method for manufacturing a compound film |
KR101542840B1 (ko) * | 2008-09-09 | 2015-08-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이의 제조 방법 |
JP5874308B2 (ja) * | 2011-10-21 | 2016-03-02 | 三菱瓦斯化学株式会社 | 銅及びモリブデンを含む多層膜用エッチング液 |
KR102194818B1 (ko) * | 2013-08-06 | 2020-12-24 | 삼성디스플레이 주식회사 | 플렉서블 터치 표시 패널 |
CN103606389B (zh) * | 2013-10-28 | 2016-11-16 | 中国科学院长春光学精密机械与物理研究所 | 高导电性无机、金属掺杂多层结构透明导电薄膜的制备方法 |
US9544994B2 (en) * | 2014-08-30 | 2017-01-10 | Lg Display Co., Ltd. | Flexible display device with side crack protection structure and manufacturing method for the same |
JP6706418B2 (ja) * | 2015-03-20 | 2020-06-10 | 日立金属株式会社 | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 |
AT15048U1 (de) * | 2015-11-27 | 2016-11-15 | Plansee Se | Beschichtetes flexibles Bauteil |
-
2017
- 2017-05-11 AT ATGM104/2017U patent/AT15574U3/de unknown
-
2018
- 2018-04-19 CN CN201880030970.2A patent/CN110651373B/zh active Active
- 2018-04-19 WO PCT/AT2018/000026 patent/WO2018204944A1/de active Application Filing
- 2018-04-19 JP JP2019561901A patent/JP7282688B2/ja active Active
- 2018-04-19 KR KR1020197036521A patent/KR102557501B1/ko active IP Right Grant
- 2018-05-02 TW TW107114884A patent/TWI793121B/zh active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002324874A (ja) * | 2001-04-25 | 2002-11-08 | Kyocera Corp | 配線基板 |
JP2002353353A (ja) * | 2001-05-22 | 2002-12-06 | Kyocera Corp | 半導体素子収納用パッケージ |
WO2004038049A1 (ja) * | 2002-10-28 | 2004-05-06 | A.L.M.T.Corp. | 複合材料、その製造方法およびそれを用いた部材 |
JP2006221162A (ja) * | 2005-02-07 | 2006-08-24 | Samsung Electronics Co Ltd | 表示装置用配線、薄膜トランジスタ表示板及びその製造方法 |
JP2014529006A (ja) * | 2012-01-12 | 2014-10-30 | 宝鶏市科廸普有色金属加工有限公司 | モリブデン・ニオブ合金板ターゲット材の加工方法 |
JP2016504495A (ja) * | 2012-11-29 | 2016-02-12 | エーリコン・サーフェス・ソリューションズ・アーゲー・トリューバッハ | 層表面の構造化方法およびそのための装置 |
JP2014199920A (ja) * | 2013-03-12 | 2014-10-23 | 日立金属株式会社 | 電子部品用金属薄膜および金属薄膜形成用Mo合金スパッタリングターゲット材 |
WO2015029286A1 (ja) * | 2013-08-27 | 2015-03-05 | パナソニック株式会社 | 薄膜トランジスタ基板の製造方法及び薄膜トランジスタ基板 |
JP2015119175A (ja) * | 2013-11-15 | 2015-06-25 | 株式会社半導体エネルギー研究所 | 半導体装置及び表示装置 |
JP2017503336A (ja) * | 2013-11-15 | 2017-01-26 | エボニック デグサ ゲーエムベーハーEvonik Degussa GmbH | 低接触抵抗薄膜トランジスタ |
JP2016224429A (ja) * | 2015-05-29 | 2016-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置、及び当該半導体装置を有する表示装置 |
US20160365368A1 (en) * | 2015-06-11 | 2016-12-15 | Samsung Display Co., Ltd. | Thin film transistor array panel |
JP2017028279A (ja) * | 2015-07-17 | 2017-02-02 | 株式会社半導体エネルギー研究所 | 半導体装置、照明装置、および車両 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023008475A1 (ja) * | 2021-07-30 | 2023-02-02 | 株式会社ニコン | 金属配線の製造方法、トランジスタの製造方法及び金属配線 |
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