AT15574U3 - Flexibles Bauteil mit Schichtaufbau mit metallischer Lage - Google Patents
Flexibles Bauteil mit Schichtaufbau mit metallischer Lage Download PDFInfo
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- AT15574U3 AT15574U3 ATGM104/2017U AT1042017U AT15574U3 AT 15574 U3 AT15574 U3 AT 15574U3 AT 1042017 U AT1042017 U AT 1042017U AT 15574 U3 AT15574 U3 AT 15574U3
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- GRNHLFULJDXJKR-UHFFFAOYSA-N 3-(2-sulfanylethyl)-1h-quinazoline-2,4-dione Chemical compound C1=CC=C2C(=O)N(CCS)C(=O)NC2=C1 GRNHLFULJDXJKR-UHFFFAOYSA-N 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000005065 mining Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 35
- 239000000758 substrate Substances 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 239000002356 single layer Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C23C24/00—Coating starting from inorganic powder
- C23C24/02—Coating starting from inorganic powder by application of pressure only
- C23C24/04—Impact or kinetic deposition of particles
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
- C23C28/3455—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
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- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/133305—Flexible substrates, e.g. plastics, organic film
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Laminated Bodies (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
- Non-Insulated Conductors (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ATGM104/2017U AT15574U3 (de) | 2017-05-11 | 2017-05-11 | Flexibles Bauteil mit Schichtaufbau mit metallischer Lage |
KR1020197036521A KR102557501B1 (ko) | 2017-05-11 | 2018-04-19 | 금속 플라이를 갖는 층 구조를 포함하는 가요성 부품 |
PCT/AT2018/000026 WO2018204944A1 (de) | 2017-05-11 | 2018-04-19 | Flexibles bauteil mit schichtaufbau mit metallischer lage |
CN201880030970.2A CN110651373B (zh) | 2017-05-11 | 2018-04-19 | 包含具有金属性层片的层结构的柔性部件 |
JP2019561901A JP7282688B2 (ja) | 2017-05-11 | 2018-04-19 | 金属層を有する層状構造を備えたフレキシブル部品 |
TW107114884A TWI793121B (zh) | 2017-05-11 | 2018-05-02 | 包含具有金屬性夾層之層結構的可撓曲組分 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ATGM104/2017U AT15574U3 (de) | 2017-05-11 | 2017-05-11 | Flexibles Bauteil mit Schichtaufbau mit metallischer Lage |
Publications (2)
Publication Number | Publication Date |
---|---|
AT15574U2 AT15574U2 (de) | 2018-03-15 |
AT15574U3 true AT15574U3 (de) | 2018-05-15 |
Family
ID=61597295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ATGM104/2017U AT15574U3 (de) | 2017-05-11 | 2017-05-11 | Flexibles Bauteil mit Schichtaufbau mit metallischer Lage |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP7282688B2 (ja) |
KR (1) | KR102557501B1 (ja) |
CN (1) | CN110651373B (ja) |
AT (1) | AT15574U3 (ja) |
TW (1) | TWI793121B (ja) |
WO (1) | WO2018204944A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102018123944A1 (de) * | 2018-09-27 | 2020-04-02 | Liebherr-Hausgeräte Ochsenhausen GmbH | Vakuumdämmkörper für Kühl- und/oder Gefriergeräte |
CN112582479A (zh) * | 2020-12-30 | 2021-03-30 | 福建华佳彩有限公司 | 一种顶栅结构的薄膜晶体管及制作方法 |
TW202318568A (zh) * | 2021-07-30 | 2023-05-01 | 日商尼康股份有限公司 | 金屬配線的製造方法、電晶體的製造方法及金屬配線 |
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JP2007069561A (ja) * | 2005-09-09 | 2007-03-22 | Sumitomo Metal Mining Co Ltd | 2層フレキシブル基板とその製造方法 |
WO2009033503A1 (en) * | 2007-09-12 | 2009-03-19 | Flisom Ag | Method for manufacturing a compound film |
CN103606389A (zh) * | 2013-10-28 | 2014-02-26 | 中国科学院长春光学精密机械与物理研究所 | 高导电性无机、金属掺杂多层结构透明导电薄膜的制备方法 |
WO2016032175A1 (en) * | 2014-08-30 | 2016-03-03 | LG Display Co.,Ltd. | Flexible display device with wire having reinforced portion and manufacturing method for the same |
AT15048U1 (de) * | 2015-11-27 | 2016-11-15 | Plansee Se | Beschichtetes flexibles Bauteil |
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JP2002232142A (ja) * | 2001-01-30 | 2002-08-16 | Kyocera Corp | 多層配線基板およびその製造方法 |
JP2002324874A (ja) * | 2001-04-25 | 2002-11-08 | Kyocera Corp | 配線基板 |
JP4530579B2 (ja) * | 2001-05-22 | 2010-08-25 | 京セラ株式会社 | 半導体素子収納用パッケージ |
JP4496518B2 (ja) * | 2002-08-19 | 2010-07-07 | 日立金属株式会社 | 薄膜配線 |
JP4615312B2 (ja) * | 2002-10-28 | 2011-01-19 | 株式会社アライドマテリアル | 複合材料、その製造方法およびそれを用いた部材 |
KR20060090523A (ko) * | 2005-02-07 | 2006-08-11 | 삼성전자주식회사 | 표시 장치용 배선 및 상기 배선을 포함하는 박막트랜지스터 표시판 |
KR101542840B1 (ko) * | 2008-09-09 | 2015-08-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이의 제조 방법 |
JP5874308B2 (ja) * | 2011-10-21 | 2016-03-02 | 三菱瓦斯化学株式会社 | 銅及びモリブデンを含む多層膜用エッチング液 |
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JP6832634B2 (ja) * | 2015-05-29 | 2021-02-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR102439505B1 (ko) * | 2015-06-11 | 2022-09-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 |
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-
2017
- 2017-05-11 AT ATGM104/2017U patent/AT15574U3/de unknown
-
2018
- 2018-04-19 WO PCT/AT2018/000026 patent/WO2018204944A1/de active Application Filing
- 2018-04-19 CN CN201880030970.2A patent/CN110651373B/zh active Active
- 2018-04-19 JP JP2019561901A patent/JP7282688B2/ja active Active
- 2018-04-19 KR KR1020197036521A patent/KR102557501B1/ko active IP Right Grant
- 2018-05-02 TW TW107114884A patent/TWI793121B/zh active
Patent Citations (5)
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JP2007069561A (ja) * | 2005-09-09 | 2007-03-22 | Sumitomo Metal Mining Co Ltd | 2層フレキシブル基板とその製造方法 |
WO2009033503A1 (en) * | 2007-09-12 | 2009-03-19 | Flisom Ag | Method for manufacturing a compound film |
CN103606389A (zh) * | 2013-10-28 | 2014-02-26 | 中国科学院长春光学精密机械与物理研究所 | 高导电性无机、金属掺杂多层结构透明导电薄膜的制备方法 |
WO2016032175A1 (en) * | 2014-08-30 | 2016-03-03 | LG Display Co.,Ltd. | Flexible display device with wire having reinforced portion and manufacturing method for the same |
AT15048U1 (de) * | 2015-11-27 | 2016-11-15 | Plansee Se | Beschichtetes flexibles Bauteil |
Also Published As
Publication number | Publication date |
---|---|
JP7282688B2 (ja) | 2023-05-29 |
KR102557501B1 (ko) | 2023-07-20 |
AT15574U2 (de) | 2018-03-15 |
KR20200008575A (ko) | 2020-01-28 |
WO2018204944A1 (de) | 2018-11-15 |
JP2020522728A (ja) | 2020-07-30 |
TWI793121B (zh) | 2023-02-21 |
CN110651373A (zh) | 2020-01-03 |
CN110651373B (zh) | 2023-08-15 |
TW201903177A (zh) | 2019-01-16 |
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