JP2020004746A - メンテナンス装置 - Google Patents
メンテナンス装置 Download PDFInfo
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- JP2020004746A JP2020004746A JP2018119448A JP2018119448A JP2020004746A JP 2020004746 A JP2020004746 A JP 2020004746A JP 2018119448 A JP2018119448 A JP 2018119448A JP 2018119448 A JP2018119448 A JP 2018119448A JP 2020004746 A JP2020004746 A JP 2020004746A
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- 238000012423 maintenance Methods 0.000 title claims abstract description 160
- 238000012545 processing Methods 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 230000000007 visual effect Effects 0.000 abstract description 13
- 238000010586 diagram Methods 0.000 description 46
- 239000007789 gas Substances 0.000 description 37
- 238000001020 plasma etching Methods 0.000 description 31
- 230000008021 deposition Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000002826 coolant Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229920000915 polyvinyl chloride Polymers 0.000 description 3
- 239000004800 polyvinyl chloride Substances 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 125000002066 L-histidyl group Chemical group [H]N1C([H])=NC(C([H])([H])[C@](C(=O)[*])([H])N([H])[H])=C1[H] 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Seal Device For Vehicle (AREA)
- Spinning Or Twisting Of Yarns (AREA)
Abstract
Description
メンテナンス装置がメンテナンスの対象とするメンテナンス対象装置について説明する。メンテナンス対象装置は、真空雰囲気とされる処理容器を有する装置である。本実施形態では、メンテナンス対象装置をプラズマエッチング装置とした場合を例に説明する。なお、メンテナンス対象装置は、プラズマエッチング装置に限定されるものではない。
次に、実施形態に係るメンテナンス装置の構成について説明する。図3は、実施形態に係るメンテナンス装置の一例を説明する図である。図3には、処理容器30を開放する前の状態を示している。実施形態に係るメンテナンス装置100は、第1メンテナンス装置101と、第2メンテナンス装置102と、第3メンテナンス装置103とを有する。
30 処理容器
30a 上部パーツ
30b 下部パーツ
31 載置台
35 フォーカスリング
46 シャワーヘッド
95 昇降機構
95a アーム
100 メンテナンス装置
101 第1メンテナンス装置
102 第2メンテナンス装置
103 第3メンテナンス装置
105 ガス管
110 カバー
110b ジッパー部
112、112a、112b アダプタ
113 クランプリング
113a ベルト部
113b 固定部
114 継手
120 カバー
121 リング部材
130 カバー
131 リング部材
140 グローブ
150 容器
151 気密ファスナー
152 継手
154 気密ファスナー
W ウエハ
Claims (9)
- 基板処理の際に真空雰囲気とされ、第1パーツと第2パーツに分離可能とされた処理容器の前記第1パーツと前記第2パーツの境界線または前記第1パーツと前記第2パーツとを分離した開口面に対応するサイズに形成され、気密性および少なくとも一部に視覚的透過性を有するカバーと、
前記カバーを、前記処理容器の前記第1パーツと前記第2パーツの前記境界線に沿ってまたは前記第1パーツと前記第2パーツとを分離した開口面に密着固定する固定部材と、
を有することを特徴とするメンテナンス装置。 - 前記カバーは、前記第1パーツと前記第2パーツの前記境界線に対応するサイズの開口が形成された袋体とされ、前記開口の一部に対向して気密性を保って接合可能なジッパー部が設けられ、前記開口で前記第1パーツと前記第2パーツの前記境界線を覆って、前記ジッパー部が接合され、
前記固定部材は、前記第1パーツと前記第2パーツの前記境界線の上下で前記カバーを密着固定する
ことを特徴とする請求項1に記載のメンテナンス装置。 - 前記カバーは、前記第1パーツと前記第2パーツとを分離した開口面に対応するサイズに形成され、
前記固定部材は、前記カバーを前記第1パーツまたは前記第2パーツの開口面の縁部に密着固定する
ことを特徴とする請求項1に記載のメンテナンス装置。 - 前記カバーは、グローブが設けられている
ことを特徴とする請求項1〜3の何れか1つに記載のメンテナンス装置。 - 前記カバーは、気密性の第1ファスナーが設けられ、前記第1ファスナーを介して気密性を有する容器に連通する
ことを特徴とする請求項1〜4の何れか1つに記載のメンテナンス装置。 - 前記容器は、当該容器の外部と内部を繋ぐバルブまたは継手と、気密性の第2ファスナーとが設けられている
ことを特徴とする請求項5に記載のメンテナンス装置。 - 前記容器は、前記カバーに着脱可能とされている
ことを特徴とする請求項5または6に記載のメンテナンス装置。 - 前記固定部材は、前記カバーで覆った内部と外部とを繋ぐバルブまたは継手が設けられている
ことを特徴とする請求項1〜7の何れか1つに記載のメンテナンス装置。 - 前記第1パーツは、上部電極を含み、
前記第2パーツは、下部電極を含む
ことを特徴とする請求項1〜7の何れか1つに記載のメンテナンス装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018119448A JP7169786B2 (ja) | 2018-06-25 | 2018-06-25 | メンテナンス装置 |
PCT/JP2019/023190 WO2020004023A1 (ja) | 2018-06-25 | 2019-06-12 | メンテナンス装置 |
CN201980016718.0A CN111801778B (zh) | 2018-06-25 | 2019-06-12 | 维护装置 |
KR1020207025107A KR20210021939A (ko) | 2018-06-25 | 2019-06-12 | 메인터넌스 장치 |
TW108121060A TWI805783B (zh) | 2018-06-25 | 2019-06-18 | 維護裝置 |
US17/009,908 US11532467B2 (en) | 2018-06-25 | 2020-09-02 | Maintenance device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018119448A JP7169786B2 (ja) | 2018-06-25 | 2018-06-25 | メンテナンス装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020004746A true JP2020004746A (ja) | 2020-01-09 |
JP7169786B2 JP7169786B2 (ja) | 2022-11-11 |
Family
ID=68984828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018119448A Active JP7169786B2 (ja) | 2018-06-25 | 2018-06-25 | メンテナンス装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11532467B2 (ja) |
JP (1) | JP7169786B2 (ja) |
KR (1) | KR20210021939A (ja) |
CN (1) | CN111801778B (ja) |
TW (1) | TWI805783B (ja) |
WO (1) | WO2020004023A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000269183A (ja) * | 1999-03-17 | 2000-09-29 | Hitachi Ltd | プラズマ処理装置及びプラズマ処理装置のメンテナンス方法 |
JP2007088295A (ja) * | 2005-09-22 | 2007-04-05 | Toshiba Corp | 半導体製造方法及び半導体製造装置 |
WO2010018621A1 (ja) * | 2008-08-12 | 2010-02-18 | 三菱重工業株式会社 | 接合装置および接合装置メンテナンス方法 |
US7824500B1 (en) * | 2007-11-19 | 2010-11-02 | National Semiconductor Corporation | System and method for cleaning a reactor chamber of a pump exhaust abatement system |
US20130263895A1 (en) * | 2012-04-06 | 2013-10-10 | Jae Chull Lee | Cvd reactor cleaning methods and systems |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS612250A (ja) * | 1984-06-15 | 1986-01-08 | Hitachi Ltd | 走査電子顕微鏡およびその類似装置における試料導入装置 |
US6045618A (en) * | 1995-09-25 | 2000-04-04 | Applied Materials, Inc. | Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment |
JP2001153760A (ja) * | 1999-11-30 | 2001-06-08 | Shimadzu Corp | 搬送用試料容器 |
US6863835B1 (en) * | 2000-04-25 | 2005-03-08 | James D. Carducci | Magnetic barrier for plasma in chamber exhaust |
JP4589235B2 (ja) * | 2003-11-21 | 2010-12-01 | 壽一 葛西 | 高気密性プラスチックチャックの製造方法および高気密性プラスチックチャック |
CN2684372Y (zh) * | 2004-01-16 | 2005-03-09 | 中国电子科技集团公司第二研究所 | 元器件真空焙烘封装箱 |
JP2006196691A (ja) | 2005-01-13 | 2006-07-27 | Toshiba Corp | 半導体製造装置及び半導体装置の製造方法 |
JP5062057B2 (ja) * | 2008-06-25 | 2012-10-31 | 東京エレクトロン株式会社 | 真空処理装置 |
JP2011124295A (ja) * | 2009-12-09 | 2011-06-23 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP5791329B2 (ja) * | 2011-03-31 | 2015-10-07 | 大陽日酸株式会社 | 気相成長装置 |
CN102185120B (zh) * | 2011-04-02 | 2013-09-11 | 东莞宏威数码机械有限公司 | 手套箱装置及工件传输的方法 |
KR102037916B1 (ko) * | 2012-10-22 | 2019-10-29 | 세메스 주식회사 | 기판처리장치 |
JP6078407B2 (ja) * | 2013-04-05 | 2017-02-08 | 古河機械金属株式会社 | ベルジャ |
JP6629116B2 (ja) * | 2016-03-25 | 2020-01-15 | 芝浦メカトロニクス株式会社 | プラズマ処理装置 |
-
2018
- 2018-06-25 JP JP2018119448A patent/JP7169786B2/ja active Active
-
2019
- 2019-06-12 WO PCT/JP2019/023190 patent/WO2020004023A1/ja active Application Filing
- 2019-06-12 CN CN201980016718.0A patent/CN111801778B/zh active Active
- 2019-06-12 KR KR1020207025107A patent/KR20210021939A/ko active Search and Examination
- 2019-06-18 TW TW108121060A patent/TWI805783B/zh active
-
2020
- 2020-09-02 US US17/009,908 patent/US11532467B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000269183A (ja) * | 1999-03-17 | 2000-09-29 | Hitachi Ltd | プラズマ処理装置及びプラズマ処理装置のメンテナンス方法 |
JP2007088295A (ja) * | 2005-09-22 | 2007-04-05 | Toshiba Corp | 半導体製造方法及び半導体製造装置 |
US7824500B1 (en) * | 2007-11-19 | 2010-11-02 | National Semiconductor Corporation | System and method for cleaning a reactor chamber of a pump exhaust abatement system |
WO2010018621A1 (ja) * | 2008-08-12 | 2010-02-18 | 三菱重工業株式会社 | 接合装置および接合装置メンテナンス方法 |
US20130263895A1 (en) * | 2012-04-06 | 2013-10-10 | Jae Chull Lee | Cvd reactor cleaning methods and systems |
Also Published As
Publication number | Publication date |
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TW202015147A (zh) | 2020-04-16 |
US20200402764A1 (en) | 2020-12-24 |
JP7169786B2 (ja) | 2022-11-11 |
US11532467B2 (en) | 2022-12-20 |
TWI805783B (zh) | 2023-06-21 |
CN111801778B (zh) | 2024-07-02 |
WO2020004023A1 (ja) | 2020-01-02 |
CN111801778A (zh) | 2020-10-20 |
KR20210021939A (ko) | 2021-03-02 |
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