JP2019110198A - 被加工物の加工方法 - Google Patents
被加工物の加工方法 Download PDFInfo
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- JP2019110198A JP2019110198A JP2017241869A JP2017241869A JP2019110198A JP 2019110198 A JP2019110198 A JP 2019110198A JP 2017241869 A JP2017241869 A JP 2017241869A JP 2017241869 A JP2017241869 A JP 2017241869A JP 2019110198 A JP2019110198 A JP 2019110198A
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- 238000003672 processing method Methods 0.000 title claims abstract description 15
- 238000003825 pressing Methods 0.000 claims abstract description 59
- 239000000853 adhesive Substances 0.000 claims abstract description 15
- 230000001070 adhesive effect Effects 0.000 claims abstract description 15
- 230000002093 peripheral effect Effects 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 abstract description 10
- 238000000926 separation method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 11
- 238000005520 cutting process Methods 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 7
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000002407 reforming Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Jigs For Machine Tools (AREA)
- Laser Beam Processing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
1a 表面
1b 裏面
1c フレームユニット
3 分割予定ライン
5 デバイス
7 シート
9 フレーム
11a,11b,11c,11d 環状部
13a,13b,13c,13d 押圧部
15a,15b 開口部
17 磁石
19 ピン
21 ピン嵌合孔
23 固定部材
25 内部改質層
2,6 テーブル
4 押圧ローラ
8 レーザ加工ユニット
Claims (4)
- 被加工物との間に働く密着力によって該被加工物よりも大きいシートに該被加工物を固定する被加工物固定ステップと、
該被加工物より大きく該シートより小さい径の開口を有する環状部と、該被加工物より大きく該シートより小さい径の開口を有する押圧部と、を有するフレームを準備するフレーム準備ステップと、
該フレーム準備ステップの後、かつ、該被加工物固定ステップの前又は後に、該シートの外周部を該環状部及び押圧部により挟持し、該フレームに該シートを固定するシート固定ステップと、
該被加工物固定ステップと、該シート固定ステップと、を実施した後に、該被加工物を加工する加工ステップと、を備えることを特徴とする被加工物の加工方法。 - 該フレームは、該環状部又は該押圧部に磁石を備え、
該シート固定ステップでは、該環状部と、該押圧部と、の間に作用する磁力によって該シートを挟持することを特徴とする請求項1記載の被加工物の加工方法。 - 該押圧部は、該環状部の開口に嵌合する外径を有し、
該シート固定ステップでは、該環状部の開口に該押圧部を嵌合し、該環状部の開口の内周壁と、該押圧部の外周壁と、の間に該シートを挟持することを特徴とする請求項1記載の被加工物の加工方法。 - 該フレームは、固定部材をさらに備え、
該シート固定ステップでは、該シートを挟持する該環状部と、該押圧部と、を該固定部材で固定することを特徴とする請求項1乃至3記載の被加工物の加工方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017241869A JP7080551B2 (ja) | 2017-12-18 | 2017-12-18 | 被加工物の加工方法 |
US16/215,735 US20190189497A1 (en) | 2017-12-18 | 2018-12-11 | Workpiece processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017241869A JP7080551B2 (ja) | 2017-12-18 | 2017-12-18 | 被加工物の加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019110198A true JP2019110198A (ja) | 2019-07-04 |
JP7080551B2 JP7080551B2 (ja) | 2022-06-06 |
Family
ID=66816325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017241869A Active JP7080551B2 (ja) | 2017-12-18 | 2017-12-18 | 被加工物の加工方法 |
Country Status (2)
Country | Link |
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US (1) | US20190189497A1 (ja) |
JP (1) | JP7080551B2 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021015823A (ja) * | 2019-07-10 | 2021-02-12 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021015840A (ja) * | 2019-07-10 | 2021-02-12 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021027238A (ja) * | 2019-08-07 | 2021-02-22 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021027236A (ja) * | 2019-08-07 | 2021-02-22 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021027237A (ja) * | 2019-08-07 | 2021-02-22 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021044375A (ja) * | 2019-09-11 | 2021-03-18 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021044388A (ja) * | 2019-09-11 | 2021-03-18 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021048150A (ja) * | 2019-09-17 | 2021-03-25 | 株式会社ディスコ | ウエーハの加工方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113600987B (zh) * | 2021-08-18 | 2022-08-19 | 宁波塞纳电热科技有限公司 | 一种定位片自动点焊设备 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS53118463U (ja) * | 1977-02-26 | 1978-09-20 | ||
JP2003100727A (ja) * | 2001-09-20 | 2003-04-04 | Dainippon Screen Mfg Co Ltd | シートフィルム保持機構、カセット、搬送機構、薄膜形成装置ならびにシートフィルム搬送方法 |
JP2004146727A (ja) * | 2002-10-28 | 2004-05-20 | Tokyo Seimitsu Co Ltd | ウェーハの搬送方法 |
JP2007165851A (ja) * | 2005-11-16 | 2007-06-28 | Denso Corp | ダイシングシートフレーム |
US20080032489A1 (en) * | 2006-08-03 | 2008-02-07 | Stmicroelectronics Ltd. | Removable wafer expander for die bonding equipment |
JP2012036374A (ja) * | 2011-06-02 | 2012-02-23 | Mitsui Chemicals Inc | ウエハ加工用粘着テープ及びその製造方法並びに使用方法 |
JP2016001733A (ja) * | 2014-05-22 | 2016-01-07 | 旭硝子株式会社 | 積層体の剥離装置及び剥離方法並びに電子デバイスの製造方法 |
JP2017147361A (ja) * | 2016-02-18 | 2017-08-24 | 株式会社ディスコ | ウエーハの加工方法 |
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US7832177B2 (en) * | 2002-03-22 | 2010-11-16 | Electronics Packaging Solutions, Inc. | Insulated glazing units |
JP4514490B2 (ja) * | 2004-03-29 | 2010-07-28 | 日東電工株式会社 | 半導体ウエハの小片化方法 |
TWI564982B (zh) * | 2011-04-26 | 2017-01-01 | 尼康股份有限公司 | A substrate holding device, a substrate bonding device, a substrate holding method, a substrate bonding method, a laminated semiconductor device, and a laminated substrate |
-
2017
- 2017-12-18 JP JP2017241869A patent/JP7080551B2/ja active Active
-
2018
- 2018-12-11 US US16/215,735 patent/US20190189497A1/en not_active Abandoned
Patent Citations (8)
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JPS53118463U (ja) * | 1977-02-26 | 1978-09-20 | ||
JP2003100727A (ja) * | 2001-09-20 | 2003-04-04 | Dainippon Screen Mfg Co Ltd | シートフィルム保持機構、カセット、搬送機構、薄膜形成装置ならびにシートフィルム搬送方法 |
JP2004146727A (ja) * | 2002-10-28 | 2004-05-20 | Tokyo Seimitsu Co Ltd | ウェーハの搬送方法 |
JP2007165851A (ja) * | 2005-11-16 | 2007-06-28 | Denso Corp | ダイシングシートフレーム |
US20080032489A1 (en) * | 2006-08-03 | 2008-02-07 | Stmicroelectronics Ltd. | Removable wafer expander for die bonding equipment |
JP2012036374A (ja) * | 2011-06-02 | 2012-02-23 | Mitsui Chemicals Inc | ウエハ加工用粘着テープ及びその製造方法並びに使用方法 |
JP2016001733A (ja) * | 2014-05-22 | 2016-01-07 | 旭硝子株式会社 | 積層体の剥離装置及び剥離方法並びに電子デバイスの製造方法 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021015823A (ja) * | 2019-07-10 | 2021-02-12 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021015840A (ja) * | 2019-07-10 | 2021-02-12 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021027238A (ja) * | 2019-08-07 | 2021-02-22 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021027236A (ja) * | 2019-08-07 | 2021-02-22 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021027237A (ja) * | 2019-08-07 | 2021-02-22 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021044375A (ja) * | 2019-09-11 | 2021-03-18 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021044388A (ja) * | 2019-09-11 | 2021-03-18 | 株式会社ディスコ | ウェーハの加工方法 |
JP7341606B2 (ja) | 2019-09-11 | 2023-09-11 | 株式会社ディスコ | ウェーハの加工方法 |
JP7341607B2 (ja) | 2019-09-11 | 2023-09-11 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021048150A (ja) * | 2019-09-17 | 2021-03-25 | 株式会社ディスコ | ウエーハの加工方法 |
JP7355568B2 (ja) | 2019-09-17 | 2023-10-03 | 株式会社ディスコ | ウエーハの加工方法 |
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Publication number | Publication date |
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JP7080551B2 (ja) | 2022-06-06 |
US20190189497A1 (en) | 2019-06-20 |
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