JP2019096738A - 素子チップの製造方法 - Google Patents
素子チップの製造方法 Download PDFInfo
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- JP2019096738A JP2019096738A JP2017224931A JP2017224931A JP2019096738A JP 2019096738 A JP2019096738 A JP 2019096738A JP 2017224931 A JP2017224931 A JP 2017224931A JP 2017224931 A JP2017224931 A JP 2017224931A JP 2019096738 A JP2019096738 A JP 2019096738A
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Abstract
Description
前記基板および前記基板を取り囲む環状のフレームを前記第2の面側から保持シートで保持する保持工程と、
水溶性の第1樹脂と水より高い蒸気圧を有する有機溶媒とを含む第1混合物を、前記基板の前記第1の面に塗布し、塗膜を乾燥させて、前記凸部および/または前記凹部に沿うように前記第1樹脂を含む保護膜を形成する保護膜形成工程と、
前記分割領域を覆う前記保護膜にレーザ光を照射して、前記分割領域を覆う前記保護膜を除去し、前記分割領域において前記基板の前記第1の面を露出させるレーザグルービング工程と、
前記素子領域を前記保護膜で被覆した状態で、前記分割領域において、前記基板を前記第1の面から前記第2の面までプラズマエッチングすることにより、前記基板を複数の素子チップに個片化する個片化工程と、
前記素子領域を被覆する前記保護膜を、水性洗浄液に接触させて除去する除去工程と、
を備える、素子チップの製造方法に関する。
基板準備工程で準備される基板は、プラズマエッチング技術を用いて、複数の素子チップに個片化されるものである。基板は、シリコンウエハのような半導体基板、フレキシブルプリント基板のような樹脂基板、セラミックス基板等であってもよく、半導体基板は、シリコン(Si)、ガリウム砒素(GaAs)、窒化ガリウム(GaN)、炭化ケイ素(SiC)等で形成されたものであってもよい。本発明は基板の材料等に限定されるものではない。
基板1および環状のフレーム2は、素子領域R1に所望の電気集積回路を形成する際、または少なくとも後述する保護膜形成工程の前に、保持シート3に保持される。図4(a)は、保持シート3に固着させた基板1および環状のフレーム2を上から見た平面図であり、図4(b)は、図4(a)のIVB−IVB線から見た断面図である。保持シート3は、粘着剤を含む上面(粘着面3a)と、粘着剤を含まない下面(非粘着面3b)とを有する。保持シート3は、その粘着面3aに基板1および環状のフレーム2を固着させることにより、基板1およびフレーム2を基板1の裏面1b側から保持する。環状のフレーム2は、円形の開口部2aを含み、フレーム2の開口部2aと基板1とが同心円状に配置されるように保持シート3に保持され、基板1で覆われていない開口部2aにおいて粘着面3aが露出している。本明細書では、保持シート3と、これに固着されたフレーム2との組み合わせを搬送キャリア4といい、搬送キャリア4に固着された基板1をキャリア付き基板1ともいう。基板1は、それ自体が薄いものであっても、搬送キャリア4により保持されるため、後続の工程において、基板1を容易に操作および搬送することができる。
ゴム成分(例えば、エチレン−プロピレンゴム(EPM)、エチレン−プロピレン−ジエンゴム(EPDM))、可塑剤、軟化剤、酸化防止剤、導電性材料等の各種添加剤が含まれていてもよい。熱可塑性樹脂は、アクリル基等の光重合反応を示す官能基を有してもよい。保持シート3の基材の厚みは、特に限定されないが、例えば50μm〜150μmである。
保護膜形成工程では、水溶性の第1樹脂と有機溶媒とを含む第1混合物が、基板1の表面1aに塗布され、塗膜が形成される。そして、塗膜を乾燥することで、第1樹脂を含む保護膜が形成される。
なお、基板1の面方向における中心からの距離が、基板1の最大径の80%以上である領域を基板1の外縁とする。
図6は、レーザグルービング工程を説明するための断面模式図である。レーザグルービング工程では、基板1の分割領域R2を覆う保護膜28にレーザ光を照射して、保護膜28を除去し、分割領域R2において基板1の表面1aを露出させる。基板1の分割領域R2を覆う保護膜28の下に多層配線層30や、多層配線層30を保護する絶縁性の保護層31が配置されている場合には、レーザ光の照射により多層配線層30や絶縁性の保護層31も除去し、分割領域R2において基板1の表面1aを露出させる。これにより、残存する保護膜28により、所定のパターンが形成される。例えば、図3における多層配線層30のメタル配線30Aおよび/またはメタル層30Dは、素子領域R1と分割領域R2とに亘って設けられていることがあり、この場合、分割領域R2において多層配線層30をレーザグルービングすることで、分割領域R2のメタル配線層30Aやメタル層30Dが除去される。
レーザグルービングの間、基板1および保持テープ3の温度を50℃以下に維持することが好ましい。
図7は、個片化工程により個片化された素子チップを説明するための断面模式図である。個片化工程では、レーザグルービング工程で露出させた、図6に示す基板1の分割領域R2において、図7の状態まで、基板1の表面1aから裏面1bまでプラズマエッチングすることにより、基板1を複数の素子領域R1に対応する素子チップ11に個片化する。本工程では、パターン化された保護膜28をマスクとしてプラズマエッチングが行なわれる。
図9は、本工程で使用されるドライエッチング装置50の一例を示す模式図である。ドライエッチング装置50のチャンバ52の頂部には誘電体窓(図示せず)が設けられており、誘電体窓の上方には上部電極としてのアンテナ54が配置されている。アンテナ54は、第1高周波電源部56に電気的に接続されている。一方、チャンバ52内の処理室58の底部側には、搬送キャリア4に固着された基板1が配置されるステージ60が配置されている。ステージ60には内部に冷媒流路(図示せず)が形成されており、冷媒流路に冷媒を循環させることにより、ステージ60は冷却される。ステージ60は下部電極としても機能し、第2高周波電源部62に電気的に接続されている。また、ステージ60は図示しない静電吸着用電極(ESC電極)を備え、ステージ60に載置された搬送キャリア4に固着された基板1をステージ60に静電吸着できるようになっている。また、ステージ60には冷却用ガスを供給するための図示しない冷却用ガス孔が設けられており、冷却用ガス孔からヘリウムなどの冷却用ガスを供給することで冷却されたステージ60に静電吸着された搬送キャリア4に固着された基板1を冷却できる。チャンバ52のガス導入口64はエッチングガス源66に流体的に接続されており、排気口68はチャンバ52内を真空排気するための真空ポンプを含む真空排気部70に接続されている。
図8は、保護膜が除去された状態の素子チップを説明するための断面模式図である。保護膜除去工程では、個片化工程で個片化された素子チップ11の素子領域R1を被覆する保護膜28を除去する。保護膜28の除去は、個片化工程で得られる図7に示すような素子チップ11の保護膜28を、水性洗浄液に接触させることにより除去する。
Claims (9)
- 第1の面と前記第1の面とは反対側の第2の面とを有し、前記第1の面に凸部および/または凹部が形成された複数の素子領域と、前記素子領域を画定する分割領域を有する基板を準備する準備工程と、
前記基板および前記基板を取り囲む環状のフレームを前記第2の面側から保持シートで保持する保持工程と、
水溶性の第1樹脂と水より高い蒸気圧を有する有機溶媒とを含む第1混合物を、前記基板の前記第1の面に塗布し、塗膜を乾燥させて、前記凸部および/または前記凹部に沿うように前記第1樹脂を含む保護膜を形成する保護膜形成工程と、
前記分割領域を覆う前記保護膜にレーザ光を照射して、前記分割領域を覆う前記保護膜を除去し、前記分割領域において前記基板の前記第1の面を露出させるレーザグルービング工程と、
前記素子領域を前記保護膜で被覆した状態で、前記分割領域において、前記基板を前記第1の面から前記第2の面までプラズマエッチングすることにより、前記基板を複数の素子チップに個片化する個片化工程と、
前記素子領域を被覆する前記保護膜を、水性洗浄液に接触させて除去する除去工程と、
を備える、素子チップの製造方法。 - 前記有機溶媒は、20℃における粘度が1.3mPa・s以下である、請求項1に記載の素子チップの製造方法。
- 前記第1混合物は、さらに水を含み、
前記有機溶媒は、水溶性である、請求項1または2に記載の素子チップの製造方法。 - 前記第1混合物は、さらにメタル防食剤を含む、請求項3に記載の素子チップの製造方法。
- 前記保護膜形成工程において、前記第1混合物の塗布と前記塗膜の乾燥とを複数回繰り返す、請求項1〜4のいずれか1項に記載の素子チップの製造方法。
- 前記保護膜形成工程が、前記第1混合物を前記基板の前記第1の面にスプレー塗布するスプレー塗布工程と、前記スプレー塗布工程で形成された第1塗膜を乾燥させる第1乾燥工程とを含む、請求項1〜5のいずれか1項に記載の素子チップの製造方法。
- 前記保護膜形成工程が、第1乾燥工程の後、乾燥された前記第1塗膜上に、第2樹脂と溶媒とを含む第2混合物をスピンコートして第2塗膜を形成するスピンコート工程と、前記第2塗膜を乾燥することにより、前記第1樹脂および前記第2樹脂を含む前記保護膜を形成する第2乾燥工程とを含む、請求項6に記載の素子チップの製造方法。
- 前記保護膜形成工程において、前記基板の外縁に形成される前記保護膜の厚みが、前記基板の前記外縁の内側に形成される前記保護膜の厚みよりも大きい、請求項1〜7のいずれか1項に記載の素子チップの製造方法。
- 前記除去工程において、前記保護膜を前記水性洗浄液に接触させる前に、前記保護膜の表面を、酸素を含むプラズマに晒して、前記保護膜の一部を除去する、請求項1〜8のいずれか1項に記載の素子チップの製造方法。
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