JP2019057727A - 有極性、カイラル、非中心対称性強誘電体材料、その材料を含むメモリセルおよび関連するデバイスと方法 - Google Patents
有極性、カイラル、非中心対称性強誘電体材料、その材料を含むメモリセルおよび関連するデバイスと方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000000463 material Substances 0.000 title claims description 228
- 239000013078 crystal Substances 0.000 claims abstract description 184
- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- 239000010955 niobium Substances 0.000 claims abstract description 28
- 239000002019 doping agent Substances 0.000 claims abstract description 24
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000011669 selenium Substances 0.000 claims abstract description 20
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 14
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 14
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 13
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910000449 hafnium oxide Inorganic materials 0.000 claims abstract description 12
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims abstract description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- KQHQLIAOAVMAOW-UHFFFAOYSA-N hafnium(4+) oxygen(2-) zirconium(4+) Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Hf+4] KQHQLIAOAVMAOW-UHFFFAOYSA-N 0.000 claims abstract description 11
- KUVFGOLWQIXGBP-UHFFFAOYSA-N hafnium(4+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Hf+4] KUVFGOLWQIXGBP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052701 rubidium Inorganic materials 0.000 claims abstract description 11
- 229910052718 tin Inorganic materials 0.000 claims abstract description 11
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 10
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract description 10
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000002178 crystalline material Substances 0.000 claims abstract description 10
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052738 indium Inorganic materials 0.000 claims abstract description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 10
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 10
- 239000011574 phosphorus Substances 0.000 claims abstract description 10
- 239000011591 potassium Substances 0.000 claims abstract description 10
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 10
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 10
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 10
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 10
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 9
- 238000000231 atomic layer deposition Methods 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 claims description 13
- 239000011575 calcium Substances 0.000 claims description 12
- 239000011777 magnesium Substances 0.000 claims description 12
- 229910004129 HfSiO Inorganic materials 0.000 claims description 11
- PDKGWPFVRLGFBG-UHFFFAOYSA-N hafnium(4+) oxygen(2-) silicon(4+) Chemical compound [O-2].[Hf+4].[Si+4].[O-2].[O-2].[O-2] PDKGWPFVRLGFBG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 7
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910007926 ZrCl Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 6
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 38
- 238000000137 annealing Methods 0.000 description 26
- 239000003989 dielectric material Substances 0.000 description 24
- 239000007772 electrode material Substances 0.000 description 19
- 230000010287 polarization Effects 0.000 description 15
- 230000008569 process Effects 0.000 description 14
- 239000010936 titanium Substances 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- 229910052735 hafnium Inorganic materials 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 101100353526 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) pca-2 gene Proteins 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 241001296405 Tiso Species 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000109 continuous material Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000002235 transmission spectroscopy Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
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Abstract
Description
本出願は、2014年5月20日に出願された、米国特許出願整理番号14/282,520の“Polar,Chiral,and Non−Centro−Symmetric Ferroelectric Materials,Memory Cells Including Such Materials,and Related Devices and Methods”の出願日の利益を享受する権利を主張する。
102 基板
104 ソース
106 ドレイン
140 FE結晶材料
160 ゲート電極材料
200 1T−FeRAMメモリセル
202 基板
204 ソース
206 ドレイン
220 絶縁バッファ材料
240 FE結晶材料
260 ゲート電極材料
300 1T−FeRAMメモリセル
302 基板
304 ソース
306 ドレイン
320 絶縁バッファ材料
340 FE結晶材料
350 界面材料
360 ゲート電極材料
400 1T−FeRAMメモリセル
402 基板
404 ソース
406 ドレイン
440 FE結晶材料
460 ゲート電極材料
500 1T−1CFeRAMメモリセル
502 基板
504 ソース
506 ドレイン
540 FE結晶材料
545 線形誘電体材料
560 ゲート電極
570 相互接続構造
590 底部電極
595 上部電極
510 キャパシタ
600 FeRAMメモリセルアレイ
601 メモリセル
611 デジット線
612 ワード線
Claims (20)
- 反転中心を通る反転対称のない有極性カイラル結晶構造を有する強誘電体結晶材料を含む半導体デバイスであって、
前記強誘電体結晶材料は、酸化ハフニウム(HfOx)、酸化ジルコニウム(ZrOx)、酸化チタン(TiOx)、酸化ジルコニウムハフニウム(HfZrOx)、酸化チタンハフニウム(HfTiOx)、及び酸化シリコンハフニウム(HfSiOx)からなる群の中から選択され、
前記強誘電体結晶材料は、ニオブ(Nb)、タンタル(Ta)、ランタン(La)、ガドリニウム(Gd)、バナジウム(V)、リン(P)、カリウム(K)、スカンジウム(Sc)、ルビジウム(Rb)、セレン(Se)、スズ(Sn)、及びインジウム(In)からなる群の中から選択された少なくとも一種のドーパントを更に含む、半導体デバイス。 - 前記強誘電体結晶材料は、前記少なくとも一種のドーパントを約0.5重量%から約30重量%の間の量だけ含む、請求項1に記載の半導体デバイス。
- 前記強誘電体結晶材料はイットリウム(Y)を更に含む、請求項1に記載の半導体デバイス。
- 前記強誘電体結晶材料は、約0.5重量%から約25重量%の間のイットリウム(Y)を含む、請求項3に記載の半導体デバイス。
- 前記強誘電体結晶材料はストロンチウム(Sr)を更に含む、請求項1に記載の半導体デバイス。
- 前記強誘電体結晶材料は、約0.0重量%から約20重量%の間のストロンチウム(Sr)を含む、請求項5に記載の半導体デバイス。
- 前記少なくとも一種のドーパントはニオブ(Nb)を含む、請求項1に記載の半導体デバイス。
- 前記強誘電体結晶材料は、約0.2重量%から約10重量%の間のニオブ(Nb)を含む、請求項7に記載の半導体デバイス。
- 前記少なくとも一種のドーパントはタンタル(Ta)を含む、請求項1に記載の半導体デバイス。
- 前記強誘電体結晶材料は、約0.2重量%から約10重量%の間のタンタル(Ta)を含む、請求項7に記載の半導体デバイス。
- 前記強誘電体結晶材料は酸化シリコンハフニウム(HfSiOx)を含む、請求項1に記載の半導体デバイス。
- 前記強誘電体結晶材料は、マグネシウム(Mg)、カルシウム(Ca)、及びバリウム(Ba)のうちの少なくとも一種を更に含む、請求項1に記載の半導体デバイス。
- ソース及びドレインを更に含み、
前記強誘電体結晶材料は、前記ソースと前記ドレインとの間に配置される、請求項1に記載の半導体デバイス。 - 前記強誘電体結晶材料に隣接するゲート電極を更に含む、請求項13に記載の半導体デバイス。
- 前記強誘電体結晶材料に隣接する、酸化シリコン又は酸窒化シリコンを含む絶縁バッファを更に含む、請求項13に記載の半導体デバイス。
- ソースと、
ドレインと、
相互接続構造によって前記ドレインに電気的に結合された、前記強誘電体結晶材料を含むキャパシタと、
を更に含む、請求項13に記載の半導体デバイス。 - 前記強誘電体結晶材料は、約2nmから約20nmの間の厚さを有する、請求項1に記載の半導体デバイス。
- 半導体デバイスを形成する方法であって、
酸化ハフニウム(HfOx)、酸化ジルコニウム(ZrOx)、酸化チタン(TiOx)、酸化ジルコニウムハフニウム(HfZrOx)、酸化チタンハフニウム(HfTiOx)、及び酸化シリコンハフニウム(HfSiOx)からなる群の中から選択された材料を含む強誘電体結晶材料を形成することと、
ニオブ(Nb)、タンタル(Ta)、ランタン(La)、ガドリニウム(Gd)、バナジウム(V)、リン(P)、カリウム(K)、スカンジウム(Sc)、ルビジウム(Rb)、セレン(Se)、スズ(Sn)、及びインジウム(In)からなる群の中から選択された少なくとも一種のドーパントを、前記強誘電体結晶材料にドーピングすることと、
を含み、
前記前記強誘電体結晶材料は、反転中心を通る反転対称のない有極性カイラル結晶構造を有する、方法。 - 前記強誘電体結晶材料を形成することは、ZrCl4、C8H24N4Zr、(C5H5)Zr[N(CH3)2]3、HfCl4、C8H24N4Hf、又は(C5H5)Hf[N(CH3)2]3のうちの少なくとも一種を用いた原子層堆積(ALD)又は金属有機原子層堆積(MOALD)によって前記強誘電体結晶材料を形成することを含む、請求項18に記載の方法。
- 前記強誘電体結晶材料にドーピングすることは、ニオブ(Nb)及びタンタル(Ta)のうちの少なくとも一種を前記強誘電体結晶材料にドーピングすることを含む、請求項18に記載の方法。
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EP3146566B1 (en) | 2022-03-16 |
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CN106463513B (zh) | 2019-06-28 |
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WO2015179062A1 (en) | 2015-11-26 |
CN110265400A (zh) | 2019-09-20 |
JP6464401B2 (ja) | 2019-02-06 |
JP6783290B2 (ja) | 2020-11-11 |
US20190189627A1 (en) | 2019-06-20 |
TWI603607B (zh) | 2017-10-21 |
KR101973248B1 (ko) | 2019-04-26 |
TW201546803A (zh) | 2015-12-16 |
US10242989B2 (en) | 2019-03-26 |
US20150340372A1 (en) | 2015-11-26 |
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KR102099546B1 (ko) | 2020-04-10 |
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