JP2018186246A - Ga2O3系半導体素子 - Google Patents
Ga2O3系半導体素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 239000013078 crystal Substances 0.000 claims abstract description 251
- 230000004888 barrier function Effects 0.000 claims abstract description 31
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 257
- 230000000903 blocking effect Effects 0.000 claims description 5
- 239000012535 impurity Substances 0.000 abstract description 7
- 239000007789 gas Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 19
- 238000005468 ion implantation Methods 0.000 description 18
- 229910021480 group 4 element Inorganic materials 0.000 description 9
- 229910052718 tin Inorganic materials 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- ZEMPKEQAKRGZGQ-AAKVHIHISA-N 2,3-bis[[(z)-12-hydroxyoctadec-9-enoyl]oxy]propyl (z)-12-hydroxyoctadec-9-enoate Chemical compound CCCCCCC(O)C\C=C/CCCCCCCC(=O)OCC(OC(=O)CCCCCCC\C=C/CC(O)CCCCCC)COC(=O)CCCCCCC\C=C/CC(O)CCCCCC ZEMPKEQAKRGZGQ-AAKVHIHISA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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Abstract
【解決手段】Ga2O3系半導体素子(ショットキーバリアダイオード1a)は、非意図的に添加されたドナーを含む第2のGa2O3系結晶層11と、第2のGa2O3系結晶層11の全体に形成されたN添加領域と、を有する。ドナーは、Ga2O3系結晶層に非意図的に添加されたものであり、N添加領域が、ドナーの濃度以下の濃度のNを含む。Nを添加することで、非意図的に添加されたドナーを補償してn型になることを防止する。
【選択図】図1
Description
第1の実施の形態は、半導体素子としての、N添加領域が形成されたGa2O3系結晶層を有するショットキーバリアダイオードに係る形態である。
第2の実施の形態は、半導体素子としての、N添加領域が形成されたGa2O3系結晶層を有する縦型MOSFET(Metal-Oxide-Semiconductor Field Effect Transistor)に係る形態である。
第3の実施の形態は、半導体素子としての、N添加領域が形成されたGa2O3系結晶層を有する横型MOSFETに係る形態である。
第4の実施の形態は、半導体素子としての、N添加領域が形成されたGa2O3系結晶層を有するMESFET(Metal-Semiconductor Field Effect Transistor)に係る形態である。
上記第1〜4の実施の形態によれば、従来、Ga2O3系結晶に用いられるアクセプターとして知られていなかったNを用いて、Ga2O3系結晶の高抵抗化や、p型領域の形成を行うことができる。そして、そのNが添加されたGa2O3系結晶層を有する半導体素子を提供することができる。
Claims (8)
- ドナーを含むGa2O3系結晶層と、
前記Ga2O3系結晶層の少なくとも一部に形成されたN添加領域と、
を有する、
Ga2O3系半導体素子。 - 前記N添加領域が、前記ドナーよりも高濃度のNを含む、
請求項1に記載のGa2O3系半導体素子。 - 前記N添加領域が、前記Ga2O3系結晶層の一部に形成された、
請求項1又は2に記載のGa2O3系半導体素子。 - 前記ドナーが、前記Ga2O3系結晶層に非意図的に添加されたものであり、
前記N添加領域が、前記ドナーの濃度以下の濃度のNを含む、
請求項1に記載のGa2O3系半導体素子。 - 前記N添加領域が、電流通路又はガードリングである、
縦型ショットキーバリアダイオードとしての、
請求項1〜4のいずれか1項に記載のGa2O3系半導体素子。 - 前記N添加領域が、チャネル領域を含む、又は電流通路となる開口領域を有する電流遮断領域である、
縦型MOSFETとしての、
請求項1〜3のいずれか1項に記載のGa2O3系半導体素子。 - 前記N添加領域が、チャネル領域を含む、又は前記Ga2O3系結晶層中のチャネル領域と前記Ga2O3系結晶層の底面の間に位置する、
横型MOSFETとしての、
請求項1〜4のいずれか1項に記載のGa2O3系半導体素子。 - 前記N添加領域が、チャネル領域を含む、又は前記Ga2O3系結晶層中のチャネル領域と前記Ga2O3系結晶層の底面の間に位置する、
MESFETとしての、
請求項1〜4のいずれか1項に記載のGa2O3系半導体素子。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017088866A JP7008293B2 (ja) | 2017-04-27 | 2017-04-27 | Ga2O3系半導体素子 |
US16/608,556 US11563092B2 (en) | 2017-04-27 | 2018-04-26 | GA2O3-based semiconductor device |
PCT/JP2018/017007 WO2018199241A1 (ja) | 2017-04-27 | 2018-04-26 | Ga2O3系半導体素子 |
EP18790539.3A EP3629379A4 (en) | 2017-04-27 | 2018-04-26 | SEMICONDUCTOR DEVICE BASED ON GA2O3 |
CN201880027299.6A CN110622319A (zh) | 2017-04-27 | 2018-04-26 | Ga2O3系半导体元件 |
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JP2017088866A JP7008293B2 (ja) | 2017-04-27 | 2017-04-27 | Ga2O3系半導体素子 |
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JP7008293B2 JP7008293B2 (ja) | 2022-01-25 |
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US (1) | US11563092B2 (ja) |
EP (1) | EP3629379A4 (ja) |
JP (1) | JP7008293B2 (ja) |
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WO (1) | WO2018199241A1 (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200125185A (ko) * | 2019-04-26 | 2020-11-04 | 홍익대학교 산학협력단 | 항복전압 특성이 개선된 쇼트키 장벽 다이오드 및 그 제조방법 |
KR20200142482A (ko) * | 2020-08-13 | 2020-12-22 | 한국세라믹기술원 | 도펀트 활성화 기술을 이용한 전력반도체용 갈륨옥사이드 박막 제조 방법 |
WO2021106809A1 (ja) * | 2019-11-29 | 2021-06-03 | 株式会社Flosfia | 半導体装置および半導体装置を有する半導体システム |
JP2021170608A (ja) * | 2020-04-16 | 2021-10-28 | トヨタ自動車株式会社 | 半導体素子の製造方法 |
JP2021190578A (ja) * | 2020-05-29 | 2021-12-13 | 豊田合成株式会社 | 半導体装置の製造方法 |
JP2021190579A (ja) * | 2020-05-29 | 2021-12-13 | 豊田合成株式会社 | 半導体装置 |
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