JP2021190578A - 半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 22
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 8
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 12
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 282
- 239000011777 magnesium Substances 0.000 description 55
- 238000005530 etching Methods 0.000 description 17
- 238000001312 dry etching Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 230000006866 deterioration Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910006252 ZrON Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004140 HfO Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical group C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
実施例1、3はp層を2層構造、実施例2は3層構造としているが、本発明は2層以上の構成であれば任意の層数でよい。また、実施例1、2では、p層を構成する複数の層のうち、Mg濃度が6×1018/cm3 以上の層を最上層とし、実施例3では最下層としているが、本発明では任意の位置でよい。要するに、本発明では、p層が複数の層で構成され、そのうち最もMg濃度の高い層(高濃度層)のMg濃度が6×1018/cm3 以上で、他の層のMg濃度が6×1018/cm3 よりも低く構成されていればよい。
120:第1n層
130:p層
131:第1p層
132:第2p層
140:第2n層
F1:ゲート絶縁膜
G1:ゲート電極
S1:ソース電極
B1、B2:ボディ電極
D1:ドレイン電極
T1:トレンチ
R1、R2:リセス
Claims (6)
- 第1n層、p層、第2n層が順に積層されたIII 族窒化物半導体または酸化ガリウム系半導体からなる半導体層と、を有し、トレンチゲート構造を有するトランジスタである半導体装置の製造方法において、
前記p層を複数の層で構成し、その複数の層のうち最もアクセプタ濃度が高い層を高濃度層として、前記高濃度層のアクセプタ濃度を6×1018/cm3 以上とし、前記p層のうち前記高濃度層以外の層のアクセプタ濃度を6×1018/cm3 より低くし、前記高濃度層のアクセプタ濃度によってしきい値電圧の値を所望の値に制御する、
ことを特徴とする半導体装置の製造方法。 - 前記高濃度層の厚さを、0.05μm以上0.2μm以下とする、ことを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記高濃度層のアクセプタ濃度を、1×1020/cm3 以下とする、ことを特徴とする請求項1または請求項2に記載の半導体装置の製造方法。
- 前記高濃度層を前記p層の最上層とする、ことを特徴とする請求項1から請求項3までのいずれか1項に記載の半導体装置の製造方法。
- 前記高濃度層を前記p層の最下層とする、ことを特徴とする請求項1から請求項3までのいずれか1項に記載の半導体装置の製造方法。
- 前記p層として、前記第1n層に接し、アクセプタ濃度が前記高濃度層以外の層のアクセプタ濃度よりも高く6×1018/cm3 以下である層をさらに形成する、ことを特徴とする請求項4に記載の半導体装置の製造方法。
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JP2020095132A JP7331783B2 (ja) | 2020-05-29 | 2020-05-29 | 半導体装置の製造方法 |
US17/241,827 US20210376127A1 (en) | 2020-05-29 | 2021-04-27 | Method for producing semiconductor device |
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009117820A (ja) * | 2007-10-16 | 2009-05-28 | Rohm Co Ltd | 窒化物半導体素子および窒化物半導体素子の製造方法 |
JP2012084739A (ja) * | 2010-10-13 | 2012-04-26 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
JP2017059600A (ja) * | 2015-09-14 | 2017-03-23 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2017152488A (ja) * | 2016-02-23 | 2017-08-31 | 株式会社デンソー | 化合物半導体装置の製造方法および化合物半導体装置 |
JP2017152490A (ja) * | 2016-02-23 | 2017-08-31 | 株式会社デンソー | 化合物半導体装置およびその製造方法 |
JP2017183428A (ja) * | 2016-03-29 | 2017-10-05 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
JP2018186246A (ja) * | 2017-04-27 | 2018-11-22 | 国立研究開発法人情報通信研究機構 | Ga2O3系半導体素子 |
JP2019062160A (ja) * | 2017-09-28 | 2019-04-18 | 豊田合成株式会社 | 半導体装置 |
WO2019098295A1 (ja) * | 2017-11-15 | 2019-05-23 | 株式会社Flosfia | p型酸化物半導体膜及びその形成方法 |
JP2019087690A (ja) * | 2017-11-09 | 2019-06-06 | 株式会社豊田中央研究所 | 窒化物半導体装置とその製造方法 |
JP2020057636A (ja) * | 2018-09-28 | 2020-04-09 | 株式会社豊田中央研究所 | 窒化物半導体装置および窒化物半導体装置の製造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008053449A (ja) * | 2006-08-24 | 2008-03-06 | Rohm Co Ltd | 半導体装置およびその製造方法 |
JP5444608B2 (ja) * | 2007-11-07 | 2014-03-19 | 富士電機株式会社 | 半導体装置 |
EP2091083A3 (en) * | 2008-02-13 | 2009-10-14 | Denso Corporation | Silicon carbide semiconductor device including a deep layer |
JP5566618B2 (ja) * | 2008-03-07 | 2014-08-06 | 古河電気工業株式会社 | GaN系半導体素子 |
JP5531787B2 (ja) * | 2010-05-31 | 2014-06-25 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
US20120104556A1 (en) * | 2010-10-27 | 2012-05-03 | Sumitomo Electric Industries, Ltd. | Power device and method for manufacturing the same |
JP2012099601A (ja) * | 2010-11-01 | 2012-05-24 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
US10312361B2 (en) * | 2011-06-20 | 2019-06-04 | The Regents Of The University Of California | Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage |
JP5884617B2 (ja) * | 2012-04-19 | 2016-03-15 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP6048317B2 (ja) * | 2013-06-05 | 2016-12-21 | 株式会社デンソー | 炭化珪素半導体装置 |
DE102015103072B4 (de) * | 2015-03-03 | 2021-08-12 | Infineon Technologies Ag | Halbleitervorrichtung mit grabenstruktur einschliesslich einer gateelektrode und einer kontaktstruktur fur ein diodengebiet |
ITUB20155862A1 (it) * | 2015-11-24 | 2017-05-24 | St Microelectronics Srl | Transistore di tipo normalmente spento con ridotta resistenza in stato acceso e relativo metodo di fabbricazione |
JP6767789B2 (ja) * | 2016-06-29 | 2020-10-14 | ローム株式会社 | 半導体装置 |
JP6677114B2 (ja) * | 2016-07-19 | 2020-04-08 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
EP3520144B1 (en) * | 2016-09-30 | 2023-09-06 | HRL Laboratories, LLC | Doped gate dielectric materials |
JP7201336B2 (ja) * | 2017-05-17 | 2023-01-10 | ローム株式会社 | 半導体装置 |
DE212018000102U1 (de) * | 2017-05-17 | 2019-08-05 | Rohm Co., Ltd. | Halbleitervorrichtung |
JP6753951B2 (ja) * | 2017-06-06 | 2020-09-09 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
JP6926869B2 (ja) * | 2017-09-13 | 2021-08-25 | 富士電機株式会社 | 半導体装置 |
-
2020
- 2020-05-29 JP JP2020095132A patent/JP7331783B2/ja active Active
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Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009117820A (ja) * | 2007-10-16 | 2009-05-28 | Rohm Co Ltd | 窒化物半導体素子および窒化物半導体素子の製造方法 |
JP2012084739A (ja) * | 2010-10-13 | 2012-04-26 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
JP2017059600A (ja) * | 2015-09-14 | 2017-03-23 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2017152488A (ja) * | 2016-02-23 | 2017-08-31 | 株式会社デンソー | 化合物半導体装置の製造方法および化合物半導体装置 |
JP2017152490A (ja) * | 2016-02-23 | 2017-08-31 | 株式会社デンソー | 化合物半導体装置およびその製造方法 |
JP2017183428A (ja) * | 2016-03-29 | 2017-10-05 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
JP2018186246A (ja) * | 2017-04-27 | 2018-11-22 | 国立研究開発法人情報通信研究機構 | Ga2O3系半導体素子 |
JP2019062160A (ja) * | 2017-09-28 | 2019-04-18 | 豊田合成株式会社 | 半導体装置 |
JP2019087690A (ja) * | 2017-11-09 | 2019-06-06 | 株式会社豊田中央研究所 | 窒化物半導体装置とその製造方法 |
WO2019098295A1 (ja) * | 2017-11-15 | 2019-05-23 | 株式会社Flosfia | p型酸化物半導体膜及びその形成方法 |
JP2020057636A (ja) * | 2018-09-28 | 2020-04-09 | 株式会社豊田中央研究所 | 窒化物半導体装置および窒化物半導体装置の製造方法 |
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